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21. 发明授权

US08957455B1 Modulation doped super-lattice base for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的调制掺杂超晶格基极
公开(公告)号：US08957455B1
公开(公告)日：2015-02-17
申请号：US13438810
申请日：2012-04-03
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L29/737
CPC分类号： H01L29/155 , H01L29/201 , H01L29/7373
摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.
摘要翻译：具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙，第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体，耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

22. 发明申请

US20050029625A1 Method and apparatus for allowing formation of self-aligned base contacts 失效
标题翻译：允许形成自对准基底触点的方法和装置
公开(公告)号：US20050029625A1
公开(公告)日：2005-02-10
申请号：US10778525
申请日：2004-02-12
申请人： Tahir Hussain , Rajesh Rajavel , Mary Montes
发明人： Tahir Hussain , Rajesh Rajavel , Mary Montes
IPC分类号： H01L21/331 , H01L29/417 , H01L29/737 , H01L27/082
CPC分类号： H01L29/66318 , H01L29/41708 , H01L29/7371
摘要： A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.
摘要翻译：不需要用于沉积自对准基极触点的方法和装置，其中过蚀刻发射极侧壁以切割发射极接触。半导体结构具有包括T形顶部和T形脚的T形发射体接触。 T形顶部用作沉积基部触点的掩模。在形成T形顶部时，其尺寸可以变化，从而允许调节基座触头和发射器之间的间隔。

23. 发明授权

US06816720B2 Call-based provisioning of mobile equipment location information 有权
标题翻译：基于呼叫的移动设备配置信息
公开(公告)号：US06816720B2
公开(公告)日：2004-11-09
申请号：US09862215
申请日：2001-05-21
申请人： Tahir Hussain , Kiran Harpanhalli
发明人： Tahir Hussain , Kiran Harpanhalli
IPC分类号： H04M1104
CPC分类号： H04L67/2833 , G06F17/3087 , H04L29/06 , H04L67/16 , H04L67/18 , H04L67/22 , H04L67/26 , H04L67/28 , H04L67/306 , H04L69/329 , H04M11/04 , H04W4/00 , H04W4/90 , H04W8/08 , H04W8/10 , H04W8/14 , H04W28/18 , H04W76/50
摘要： Methods, systems, and arrangements enable a mobile equipment (ME) to provide notification when a preselected number is called. In accordance with certain embodiments, upon the calling of a preselected number, the ME sends a notification to the network in addition to setting up a voice call to the dialed number. Preselected number(s) may include emergency numbers (e.g., “911”), portal-defined numbers, etc. The notification may include dialed digits, time of call, and/or location information originating from the ME. When location information is included with the notification, the location information may be forwarded to the portal for further processing and possible additional transmission. Also, location information from the notification can reduce response time and signaling capacity usage when the network responds to an inquiry regarding location from an emergency service provider.
摘要翻译：方法，系统和布置使移动设备（ME）能够在预选号码被呼叫时提供通知。根据某些实施例，在呼叫预选号码时，除向呼叫号码建立语音呼叫之外，ME向网络发送通知。预选号码可以包括紧急号码（例如“911”），门户定义的号码等。该通知可以包括来自ME的拨号数字，呼叫时间和/或位置信息。当通知中包含位置信息时，可以将位置信息转发到门户进行进一步处理和可能的附加传输。此外，当网络响应于来自紧急服务提供商的位置的询问时，来自通知的位置信息可以减少响应时间和信令容量使用。

24. 发明授权

US6163700A System and method for adaptive reservation of radio resources for cells belonging to localized service area 失效
标题翻译：属于本地化服务区域的小区的无线电资源的自适应预留的系统和方法
公开(公告)号：US6163700A
公开(公告)日：2000-12-19
申请号：US224814
申请日：1998-12-30
申请人： Tahir Hussain , Patrick Arabie , Bagher Rouhollahzadeh , Ranjit Bhatia
发明人： Tahir Hussain , Patrick Arabie , Bagher Rouhollahzadeh , Ranjit Bhatia
IPC分类号： H04W16/04 , H04W16/14 , H04W24/02 , H04W28/26 , H04Q7/20
CPC分类号： H04W16/04 , H04W16/14 , H04W24/02 , H04W28/26
摘要： A telecommunications system and method is disclosed for providing adaptive reservation of radio resources within a Localized Service Area (LSA) in order to achieve more efficient channel utilization of radio resources within the LSA. During a predefined time period, a base station controller (BSC) within the LSA scans for the percentage of radio resources used by public mobile subscriber and LSA mobile subscribers. The BSC compares the scanned percentage of radio resources with a radio resource usage profile stored in the BSC. If the scanned radio resource usage differs from the radio resource usage profile, the BSC sets new radio resource reservations for LSA and public mobile subscribers and updates the radio resource usage profile with the new radio resource reservations. The process is repeated to ensure maximum efficient radio resource usage within the LSA.
摘要翻译：公开了一种用于在本地化服务区（LSA）内提供无线电资源的自适应预留的电信系统和方法，以便实现LSA内的无线电资源的更有效的信道利用。在预定义的时间段内，LSA内的基站控制器（BSC）扫描由公共移动用户和LSA移动用户使用的无线资源的百分比。 BSC将无线电资源的扫描百分比与存储在BSC中的无线资源使用简档进行比较。如果扫描的无线电资源使用与无线电资源使用情况不同，则BSC为LSA和公共移动用户设置新的无线电资源预留，并且利用新的无线电资源预留来更新无线电资源使用简档。重复该过程以确保在LSA内最大限度地提高无线电资源的使用。

25. 发明授权

US08575659B1 Carbon-beryllium combinationally doped semiconductor 失效
标题翻译：碳铍组合掺杂半导体
公开(公告)号：US08575659B1
公开(公告)日：2013-11-05
申请号：US13209395
申请日：2011-08-13
申请人： Steven S. Bui , Tahir Hussain , James Chingwei Li
发明人： Steven S. Bui , Tahir Hussain , James Chingwei Li
IPC分类号： H01L29/66 , H01L21/8249
CPC分类号： H01L29/36 , H01L29/0826 , H01L29/1004 , H01L29/207 , H01L29/66242 , H01L29/7371
摘要： A combinationally doped semiconductor layer, a double heterojunction bipolar transistor (DHBT) including a combinationally doped semiconductor layer, and a method of making a combinationally doped semiconductor layer employ a combination of carbon and beryllium doping. The combinationally doped semiconductor layer includes a first sublayer of a semiconductor material doped substantially with beryllium and a second sublayer of the semiconductor material doped substantially with carbon. The DHBT includes a carbon-beryllium combinationally doped semiconductor layer as a base layer. The method of making a combinationally doped semiconductor layer includes growing a first sublayer of the semiconductor layer, the first sublayer being doped substantially with beryllium and growing a second sublayer of the semiconductor layer, the second sublayer being doped substantially with carbon.
摘要翻译：组合掺杂半导体层，包括组合掺杂半导体层的双异质结双极晶体管（DHBT）以及制造组合掺杂半导体层的方法采用碳和铍掺杂的组合。组合掺杂的半导体层包括基本上掺杂有铍的半导体材料的第一子层和基本上掺杂碳的半导体材料的第二子层。 DHBT包括作为基底层的碳 - 铍组合掺杂半导体层。制造组合掺杂半导体层的方法包括生长半导体层的第一子层，第一子层基本上掺杂有铍并生长半导体层的第二子层，第二子层基本上被碳掺杂。

26. 发明授权

US08525301B1 Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time 有权
公开(公告)号：US08525301B1
公开(公告)日：2013-09-03
申请号：US12290920
申请日：2008-11-05
申请人： Tahir Hussain
发明人： Tahir Hussain
IPC分类号： H01L29/66
CPC分类号： H01L29/66318 , H01L29/7371
摘要： A method for fabricating heterojunction bipolar transistors that exhibit simultaneous low base resistance and short base transit times, which translate into semiconductor devices with low power consumption and fast switching times, is presented. The method comprises acts for fabricating a set of extrinsic layers by depositing a highly-doped p+ layer on a substrate, depositing a masking layer on highly-doped p+ layer, patterning the masking layer with a masking opening, removing a portion of the highly-doped p+ layer and the substrate through the masking opening in the masking layer to form a well, and growing an intrinsic layered device in the well by a combination of insitu etching and epitaxial regrowth, where an intrinsic layer has a thickness selected independently from a thickness of its corresponding extrinsic layer, thus allowing the resulting device to have thick extrinsic base layer (low base resistance) and thin intrinsic base layer (short base transit times) simultaneously.

27. 发明授权

US07494887B1 Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time 有权
标题翻译：用于制造具有同时低基极电阻和短基极传输时间的异质结双极晶体管的方法和装置
公开(公告)号：US07494887B1
公开(公告)日：2009-02-24
申请号：US10920708
申请日：2004-08-17
申请人： Tahir Hussain
发明人： Tahir Hussain
IPC分类号： H01L21/331 , H01L21/20
CPC分类号： H01L29/66318 , H01L29/7371
摘要： A method for fabricating heterojunction bipolar transistors that exhibit simultaneous low base resistance and short base transit times, which translate into semiconductor devices with low power consumption and fast switching times, is presented. The method comprises acts for fabricating a set of extrinsic layers by depositing a highly-doped p+ layer on a substrate, depositing a masking layer on highly-doped p+ layer, patterning the masking layer with a masking opening, removing a portion of the highly-doped p+ layer and the substrate through the masking opening in the masking layer to form a well, and growing an intrinsic layered device in the well by a combination of insitu etching and epitaxial regrowth, where an intrinsic layer has a thickness selected independently from a thickness of its corresponding extrinsic layer, thus allowing the resulting device to have thick extrinsic base layer (low base resistance) and thin intrinsic base layer (short base transit times) simultaneously.
摘要翻译：提出了一种制造异质结双极晶体管的方法，它们具有同时低的基极电阻和短的基极传输时间，从而转换成具有低功耗和快速切换时间的半导体器件。该方法包括通过在衬底上沉积高度掺杂的p +层来制造一组非本征层的动作，在高度掺杂的p +层上沉积掩模层，用掩蔽开口对掩模层进行图案化，掺杂的p +层和衬底通过掩模层中的掩模开口形成阱，并通过本征蚀刻和外延再生长的组合在阱中生长本征分层器件，其中本征层具有独立于厚度选择的厚度，从而允许所得到的器件同时具有厚的外在基极层（低基极电阻）和薄的本征基极层（短的基极传输时间）。

28. 发明授权

US07043231B2 System, method and apparatus for polling telecommunications nodes for real-time information 失效
公开(公告)号：US07043231B2
公开(公告)日：2006-05-09
申请号：US09755360
申请日：2001-01-05
申请人： Ranjit Bhatia , Shashi Kavi , Tahir Hussain , Arvind Betrabet
发明人： Ranjit Bhatia , Shashi Kavi , Tahir Hussain , Arvind Betrabet
IPC分类号： H04L12/66 , H04L12/28 , H04L12/56 , G06F15/16 , H04N7/16
CPC分类号： H04L67/16 , G06F17/3087 , H04L29/06 , H04L67/18 , H04L67/20 , H04L67/22 , H04L67/26 , H04L67/306 , H04L69/329 , H04W4/00 , H04W28/18
摘要： A system, method, and apparatus for facilitating information interexchange between a telecommunications network serving a wireless communications device and an information service provider. A Business-to-Business (B2B) engine polls a telecommunications node associated with the telecommunications network serving the wireless communications device for real-time information. The telecommunications node responds by transmitting the requested real-time information to the B2B engine, which, in turn, provides the received real-time information to the information service provider. The information service provider, in turn, provides a service, tailored according to the real-time information received, to a subscriber associated with the wireless communications device.

29. 发明授权

US06397071B1 System and method for configuring generic equipment measurement units with a mobile services switching center 有权
标题翻译：用移动业务交换中心配置通用设备测量单元的系统和方法
公开(公告)号：US06397071B1
公开(公告)日：2002-05-28
申请号：US09227985
申请日：1999-01-08
申请人： Tahir Hussain , Christopher Kingdon , Bagher Zadeh , Bikash Saha
发明人： Tahir Hussain , Christopher Kingdon , Bagher Zadeh , Bikash Saha
IPC分类号： H04Q720
CPC分类号： H04W64/00 , G01S5/02
摘要： A system and method for efficiently utilizing the radio interface in a mobile station positioning capable mobile communications network. A maximum period of mobile station positioning inactivity is allowed after which any system resources, such as semi-permanently allocated control channels, may be deallocated, thereby allowing the control channel or like resource to be utilized for other Switching System/Base Station System communications.
摘要翻译：一种用于在移动台定位能力的移动通信网络中有效利用无线电接口的系统和方法。允许移动台定位不活动的最大周期，之后任何系统资源（例如半永久分配的控制信道）可以被释放，从而允许控制信道或类似资源用于其他交换系统/基站系统通信。

30. 发明授权

US09450022B1 Memristor devices and fabrication 有权
标题翻译：忆阻器的装置和制造
公开(公告)号：US09450022B1
公开(公告)日：2016-09-20
申请号：US13604559
申请日：2012-09-05
申请人： Dana C. Wheeler , Tahir Hussain , Yakov Royter , Eason F. Wang
发明人： Dana C. Wheeler , Tahir Hussain , Yakov Royter , Eason F. Wang
IPC分类号： H01L27/24 , H01L21/00
CPC分类号： H01L27/2418 , H01L27/2463 , H01L45/04 , H01L45/1253 , H01L45/146 , H01L45/16
摘要： A method for fabricating a digital memristor crossbar array includes applying a protective layer on at least a portion of a memristive layer. A method for fabricating an analog memristor crossbar array includes providing a self-aligning first electrode layer. An analog memristor includes a memristive layer bar arranged to self-align said second electrode on said memristive layer along its length.
摘要翻译：数字忆阻器横杆阵列的制造方法包括在至少一部分忆阻层上施加保护层。一种用于制造模拟忆阻器交叉开关阵列的方法包括提供自对准的第一电极层。模拟忆阻器包括设置成沿其长度自对准所述忆阻层上的所述第二电极的忆阻层条。

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