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21. 发明授权

US06860943B2 Method for producing group III nitride compound semiconductor 失效
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US06860943B2
公开(公告)日：2005-03-01
申请号：US10268998
申请日：2002-10-11
申请人： Masayoshi Koike , Hiroshi Watanabe
发明人： Masayoshi Koike , Hiroshi Watanabe
IPC分类号： C30B29/38 , C30B25/02 , H01L21/20 , H01L21/205 , H01L29/201 , H01S5/323 , H01S5/343 , C30B25/04 , C30B25/14
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02658 , H01L33/007
摘要： Disclosed is a method for producing a Group III nitride compound semiconductor including a pit formation step in which a portion of an uppermost layer of a first Group III nitride compound semiconductor layer containing one or more sub-layers, the portion containing lattice defects, is subjected to treatment by use of a solution or vapor which corrodes the portion more easily than it corrodes a portion of the uppermost layer containing no lattice defects, the first Group III nitride compound semiconductor layer not being accompanied by a substrate therefor as a result of removal therefrom, or being accompanied by a substrate such that the semiconductor layer is formed with or without intervention of a buffer layer provided on the substrate; and a lateral growth step of growing a second Group III nitride compound semiconductor layer through vertical and lateral epitaxial overgrowth around nuclei as seeds for crystal growth which are on flat portions of the uppermost layer of the first Group III nitride compound semiconductor layer, but not on portions of the uppermost layer that define pits formed through the pit formation step.
摘要翻译：公开了一种制造含有凹坑形成步骤的III族氮化物化合物半导体的方法，其中包含一个或多个子层的第一III族氮化物化合物半导体层的最上层部分，包含晶格缺陷的部分被施加通过使用比不腐蚀不含有晶格缺陷的最上层的一部分腐蚀该部分的溶液或蒸汽来进行处理，因此第一III族氮化物化合物半导体层不伴随其底物而被附着于其上或伴随着衬底，使得半导体层形成有或没有介于设置在衬底上的缓冲层; 以及横向生长步骤，其通过垂直和横向外延过生长生长第二III族氮化物化合物半导体层，所述第三III族氮化物化合物半导体层作为晶体生长的晶种，其在第一III族氮化物半导体层的最上层的平坦部分上但不在限定通过凹坑形成步骤形成的凹坑的最上层的部分。

22. 发明授权

US06716655B2 Group III nitride compound semiconductor element and method for producing the same 失效
标题翻译： III族氮化物化合物半导体元件及其制造方法
公开(公告)号：US06716655B2
公开(公告)日：2004-04-06
申请号：US10160288
申请日：2002-06-04
申请人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
发明人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
IPC分类号： H01L3304
CPC分类号： C30B23/02 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/007
摘要： An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed from SiO2 film is provided on the Si(111) plane of an n-type silicon substrate, and a window portion (crystal growth region) in the shape of an equilateral triangle having a side of approximately 300 &mgr;m is formed through the mask. The three sides of the equilateral triangle are composed of three edges; each edge defined by the (111) plane and another crystal plane that is cleavable. Subsequently, a multi-layer structure of semiconductor crystals in an LED is formed through crystal growth of a Group III nitride compound semiconductor. Thus, limiting the area of one crystal growth region to a considerably small area weakens a stress applied to a semiconductor layer, thereby readily producing semiconductor elements having excellent crystallinity. In addition, semiconductor elements can be arranged in a semiconductor wafer at high packing density without loss, and each side of these semiconductor elements can be readily arranged in a line on a semiconductor wafer, thereby enhancing quality, yield, productivity, etc. of semiconductor elements.
摘要翻译：本发明的目的是高效率地制造由没有裂纹和位错密度低且具有优异特性的高品质结晶半导体形成的半导体元件。具体地，在n型硅衬底的Si（111）面上设置由SiO 2膜形成的掩模，并且形成具有约300μm侧面的等边三角形形状的窗口部分（晶体生长区域）通过面具。等边三角形的三面由三边组成，每个边缘由（111）面和另一个可切割的晶体平面限定。随后，通过III族氮化物化合物半导体的晶体生长，形成LED中的半导体晶体的多层结构。因此，将一个晶体生长区域的面积限制在相当小的面积上，削弱施加到半导体层的应力，从而容易地制造具有优异结晶度的半导体元件。此外，半导体元件可以以高封装密度无损耗地布置在半导体晶片中，并且这些半导体元件的每一侧可以容易地布置在半导体晶片上的线上，从而提高半导体的质量，产量，生产率等元素。

23. 发明授权

US06541798B2 Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device 失效
公开(公告)号：US06541798B2
公开(公告)日：2003-04-01
申请号：US09730005
申请日：2000-12-06
申请人： Masayoshi Koike , Shiro Yamasaki
发明人： Masayoshi Koike , Shiro Yamasaki
IPC分类号： H01L3300
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/32341 , Y10T428/265
摘要： A clad layer is provided as a multilayer structure made of an alternate laminate of 20 layers of Al0.2Ga0.8N 50 nm thick and 20 layers of Ga0.99In0.01N 20 nm thick. The clad layer about 1.4 &mgr;m thick has a low elastic constant because the clad layer is provided as a multilayer structure. In a laser diode, it is useful that another layer such as a guide layer requiring a band gap of aluminum gallium nitride (AlxGa1−xN 0

24. 发明授权

US06471770B2 Method of manufacturing semiconductor substrate 失效
标题翻译：制造半导体衬底的方法
公开(公告)号：US06471770B2
公开(公告)日：2002-10-29
申请号：US09748234
申请日：2000-12-27
申请人： Masayoshi Koike , Seiji Nagai
发明人： Masayoshi Koike , Seiji Nagai
IPC分类号： C30B2522
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02491 , H01L21/02505 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01S5/0202 , H01S5/0213 , H01S5/32341
摘要： A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is dissolved. In this state, the sapphire and GaN layer are separated from each other.
摘要翻译：在低于Au层的1064℃的熔点的温度下，通过Au层在蓝宝石上生长厚的GaN层，使样品的温度升高到超过Au层的熔点，使得 Au层溶解。在这种状态下，蓝宝石和GaN层彼此分离。

25. 发明授权

US5862167A Light-emitting semiconductor device using gallium nitride compound 失效
标题翻译：使用氮化镓化合物的发光半导体器件
公开(公告)号：US5862167A
公开(公告)日：1999-01-19
申请号：US863397
申请日：1997-05-27
申请人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
发明人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/10 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/46 , H01S5/183 , H01S5/323 , H01S3/19
CPC分类号： H01L33/105 , H01L33/32 , H01S5/18375 , H01L33/405 , H01L33/465 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
摘要翻译：提供一种发光二极管或激光二极管，其使用满足式（Al x Ga 1-x）y In 1-y N的III族氮化物化合物半导体，包括0≤x≤1，0≤y< = 1。提供了一种双异质结结构，其在活性层之间具有更宽带隙的层之间夹持有源层。二极管具有多层结构，其具有反射发射光的反射层或反射抑制层。二极管的发射光在垂直于双异质结结构的方向上离开二极管。在与光出口相反的方向上发射的光被反射膜反射到光出口的方向。此外，设置在光出口处或附近的反射抑制膜通过最小化或防止反射来帮助释放出射光。结果，光可以被发光二极管有效地发射。

26. 发明授权

US5760460A Light-emitting diode array 失效
标题翻译：发光二极管阵列
公开(公告)号：US5760460A
公开(公告)日：1998-06-02
申请号：US48249
申请日：1993-04-19
申请人： Masayoshi Koike , Masayuki Kuwabara
发明人： Masayoshi Koike , Masayuki Kuwabara
IPC分类号： B41J2/45 , H01L27/15 , H01L33/08 , H01L33/12 , H01L33/30 , H01L33/40 , H01L33/44 , H01L29/06 , H01L23/58
CPC分类号： B41J2/45 , H01L27/153
摘要： An array of light-emitting diodes each having a junction between a region of a first conductivity type and a region of a second conductivity type. The array fabrication process offers the elimination of wafer breakage is eliminated and an array with stable optical output power.
摘要翻译：每个发光二极管的阵列具有第一导电类型的区域和第二导电类型的区域之间的接合点。阵列制造工艺提供了消除晶片断裂的消除和具有稳定的光输出功率的阵列。

27. 发明授权

US09142619B2 Group III nitride semiconductor device and method for manufacturing the same 有权
标题翻译： III族氮化物半导体器件及其制造方法
公开(公告)号：US09142619B2
公开(公告)日：2015-09-22
申请号：US13704963
申请日：2011-11-25
申请人： Tsukasa Kitano , Koichi Naniwae , Masayoshi Koike , Fumiharu Teramae , Toshiyuki Kondo , Atsushi Suzuki , Tomohiko Maeda , Midori Mori
发明人： Tsukasa Kitano , Koichi Naniwae , Masayoshi Koike , Fumiharu Teramae , Toshiyuki Kondo , Atsushi Suzuki , Tomohiko Maeda , Midori Mori
IPC分类号： H01L29/16 , H01L21/02 , H01L33/00 , H01L33/20 , H01L33/32
CPC分类号： H01L29/1608 , H01L21/02107 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02631 , H01L21/02639 , H01L33/007 , H01L33/12 , H01L33/20 , H01L33/32
摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.
摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长掩模层40上的III族氮化物半导体层10。

28. 发明授权

US08546834B2 LED package 有权
标题翻译： LED封装
公开(公告)号：US08546834B2
公开(公告)日：2013-10-01
申请号：US11783788
申请日：2007-04-12
申请人： Masayoshi Koike , Bum Joon Kim
发明人： Masayoshi Koike , Bum Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/483 , H01L2924/0002 , H01L2924/00
摘要： An LED package improved in efficiency and brightness. In the package, a body has a mounting part thereon. A plurality of light emitting diode chips are mounted on the mounting part. The mounting part has a cross-section upwardly convexed with a non-planar top portion so that at least two adjacent ones of the light emitting diode chips have opposing side surfaces facing a different direction from each other.
摘要翻译： LED封装提高了效率和亮度。在包装中，主体在其上具有安装部分。多个发光二极管芯片安装在安装部分上。安装部分具有向上凸起的非平面顶部部分的横截面，使得至少两个相邻的发光二极管芯片具有面向彼此不同方向的相对侧表面。

29. 发明授权

US07943492B2 Method of forming nitride film and nitride structure 有权
标题翻译：形成氮化物膜和氮化物结构的方法
公开(公告)号：US07943492B2
公开(公告)日：2011-05-17
申请号：US11790125
申请日：2007-04-24
申请人： Jaeun Yoo , Hyung Soo Ahn , Min Yang , Masayoshi Koike
发明人： Jaeun Yoo , Hyung Soo Ahn , Min Yang , Masayoshi Koike
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0254 , H01L21/02543 , H01L21/02576 , H01L21/0262
摘要： A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.
摘要翻译：一种通过氢化物气相外延形成氮化物膜的方法，所述方法包括：在外部反应室和依次位于气体供给方向上的内部反应室中依次配置至少一种包括杂质的III族金属源和基板，在生长温度下加热外部反应室和内部反应室; 通过向外部反应室中供应氯化氢气体和载气而与III族金属源反应并将金属氯化物转移到基底上形成金属氯化物; 以及通过使转移的金属氯化物与供应到内部反应室的氮源气体反应，在衬底上形成掺杂有杂质的氮化物膜。

30. 发明授权

US07737429B2 Nitride based semiconductor device using nanorods and process for preparing the same 有权
标题翻译：使用纳米棒的基于氮化物的半导体器件及其制备方法
公开(公告)号：US07737429B2
公开(公告)日：2010-06-15
申请号：US11204226
申请日：2005-08-16
申请人： Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
发明人： Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
摘要翻译：公开了一种氮化物基半导体器件及其制备方法，其包括在硅衬底上形成的高质量GaN层。根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

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