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1. 发明授权

US07163876B2 Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device 有权
标题翻译： III族氮化物化合物半导体的制造方法以及III族氮化物化合物半导体装置
公开(公告)号：US07163876B2
公开(公告)日：2007-01-16
申请号：US10473075
申请日：2002-03-12
申请人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
发明人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
IPC分类号： H01L21/36
CPC分类号： H01L21/02647 , H01L21/0237 , H01L21/02381 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L33/007
摘要： In the epitaxial growth process in which each growth region D is zoned by a mask 2 formed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed in the central portion of each band of the mask 2 between each adjacent edge portion of the growth region D, Group III or Group V raw material is never unnecessarily supplied to the edge portion of the growth region D. As a result, difference of Group III or Group V rare material supply amount to the edge portion and central portion of the device formation region D is suppressed and the edge portion of the device region may not be convexity.
摘要翻译：在其中每个生长区域D由栅格图案形成的掩模2划分的外延生长过程中，因为在相邻的每个相邻的掩模2的每个带的中心部分中形成III族氮化物化合物半导体的消耗区域C 生长区域D，组III或组V原料的边缘部分不会不必要地被供给到生长区域D的边缘部分。结果，III族或V族稀有材料供应量与边缘部分和中心器件形成区域D的部分被抑制，器件区域的边缘部分可能不是凸的。

2. 发明授权

US06716655B2 Group III nitride compound semiconductor element and method for producing the same 失效
标题翻译： III族氮化物化合物半导体元件及其制造方法
公开(公告)号：US06716655B2
公开(公告)日：2004-04-06
申请号：US10160288
申请日：2002-06-04
申请人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
发明人： Seiji Nagai , Masayoshi Koike , Kazuyoshi Tomita
IPC分类号： H01L3304
CPC分类号： C30B23/02 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/007
摘要： An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed from SiO2 film is provided on the Si(111) plane of an n-type silicon substrate, and a window portion (crystal growth region) in the shape of an equilateral triangle having a side of approximately 300 &mgr;m is formed through the mask. The three sides of the equilateral triangle are composed of three edges; each edge defined by the (111) plane and another crystal plane that is cleavable. Subsequently, a multi-layer structure of semiconductor crystals in an LED is formed through crystal growth of a Group III nitride compound semiconductor. Thus, limiting the area of one crystal growth region to a considerably small area weakens a stress applied to a semiconductor layer, thereby readily producing semiconductor elements having excellent crystallinity. In addition, semiconductor elements can be arranged in a semiconductor wafer at high packing density without loss, and each side of these semiconductor elements can be readily arranged in a line on a semiconductor wafer, thereby enhancing quality, yield, productivity, etc. of semiconductor elements.
摘要翻译：本发明的目的是高效率地制造由没有裂纹和位错密度低且具有优异特性的高品质结晶半导体形成的半导体元件。具体地，在n型硅衬底的Si（111）面上设置由SiO 2膜形成的掩模，并且形成具有约300μm侧面的等边三角形形状的窗口部分（晶体生长区域）通过面具。等边三角形的三面由三边组成，每个边缘由（111）面和另一个可切割的晶体平面限定。随后，通过III族氮化物化合物半导体的晶体生长，形成LED中的半导体晶体的多层结构。因此，将一个晶体生长区域的面积限制在相当小的面积上，削弱施加到半导体层的应力，从而容易地制造具有优异结晶度的半导体元件。此外，半导体元件可以以高封装密度无损耗地布置在半导体晶片中，并且这些半导体元件的每一侧可以容易地布置在半导体晶片上的线上，从而提高半导体的质量，产量，生产率等元素。

3. 发明授权

US5889806A Group III nitride compound semiconductor laser diodes 失效
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US5889806A
公开(公告)日：1999-03-30
申请号：US908938
申请日：1997-08-08
申请人： Seiji Nagai , Shiro Yamasaki , Masayoshi Koike , Kazuyoshi Tomita , Tetsu Kachi , Isamu Akasaki , Hiroshi Amano
发明人： Seiji Nagai , Shiro Yamasaki , Masayoshi Koike , Kazuyoshi Tomita , Tetsu Kachi , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/2004 , H01S5/3211 , H01S5/34333
摘要： A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.
摘要翻译：使用III族氮化物化合物半导体的激光二极管由In0.2Ga0.8N / GaN SQW有源层5，一对GaN引导层41和62组成，其中活性层具有比有源层更宽的禁带，以及一对 Al0.08Ga0.92N包覆层4和71夹着一对引导层，LD分别限制载流子和光。每个引导层41和62的一部分平行于有源层形成具有比引导层更宽的禁带宽度的Al 0.15 Ga 0.75 N阻挡层41和62。结果，载流子被限制在有源层中，并且LD的激光输出被改善。

4. 发明授权

US07491984B2 Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices 失效
标题翻译：制备III族氮化物化合物半导体和III族氮化物化合物半导体器件的方法
公开(公告)号：US07491984B2
公开(公告)日：2009-02-17
申请号：US10978438
申请日：2004-11-02
申请人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
发明人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations.A GaN layer 31 is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, and a mask 4 is formed at the bottom of the trench such that the upper surface of the mask 4 is positioned below the top surface of the GaN layer 31. A GaN layer 32 is lateral-epitaxially grown with the top surface 31a of the mesa and sidewalls 31b of the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer 32 formed above the mask 4 through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer 31 can be prevented.
摘要翻译：本发明提供了具有抑制的穿透位错产生的III族氮化物化合物半导体。对GaN层31进行蚀刻，以形成具有例如点状，条状或格栅形状的岛状结构，由此提供沟槽/台面结构，并且在底部形成掩模4 使得掩模4的上表面位于GaN层31的顶表面之下。GaN层32被侧壁外延生长，台面的顶表面31a和用作核的沟槽的侧壁31b ，从而埋入沟槽，然后在垂直方向进行外延生长。在通过横向外延生长形成在掩模4上方的GaN层32的上部区域中，可以防止包含在GaN层31中的穿透位错的传播。

5. 发明授权

US06471770B2 Method of manufacturing semiconductor substrate 失效
标题翻译：制造半导体衬底的方法
公开(公告)号：US06471770B2
公开(公告)日：2002-10-29
申请号：US09748234
申请日：2000-12-27
申请人： Masayoshi Koike , Seiji Nagai
发明人： Masayoshi Koike , Seiji Nagai
IPC分类号： C30B2522
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02491 , H01L21/02505 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01S5/0202 , H01S5/0213 , H01S5/32341
摘要： A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is dissolved. In this state, the sapphire and GaN layer are separated from each other.
摘要翻译：在低于Au层的1064℃的熔点的温度下，通过Au层在蓝宝石上生长厚的GaN层，使样品的温度升高到超过Au层的熔点，使得 Au层溶解。在这种状态下，蓝宝石和GaN层彼此分离。

6. 发明授权

US06326236B1 Semiconductor light-emitting device and manufacturing method thereof 有权
公开(公告)号：US06326236B1
公开(公告)日：2001-12-04
申请号：US09497814
申请日：2000-02-03
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2144
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

7. 发明授权

US07141444B2 Production method of III nitride compound semiconductor and III nitride compound semiconductor element 失效
公开(公告)号：US07141444B2
公开(公告)日：2006-11-28
申请号：US10221486
申请日：2001-03-12
申请人： Masayoshi Koike , Yuta Tezen , Hiroshi Yamashita , Seiji Nagai , Toshio Hiramatsu
发明人： Masayoshi Koike , Yuta Tezen , Hiroshi Yamashita , Seiji Nagai , Toshio Hiramatsu
IPC分类号： H01L21/00
CPC分类号： H01L21/0265 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647
摘要： A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/mesa such that layer different from the first Group III nitride compound semiconductor layer 31 is exposed at the bottom portion of the trench. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, laterally, with a top surface of the mesa and a sidewall/sidewalls of the trench serving as a nucleus, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth. Etching may be performed until a cavity portion is provided in the substrate. The layer serving as a nucleus of ELO may be doped with indium (In) having an atomic radius greater than that of gallium (Ga) serving as a predominant element. The first semiconductor layer may be a multi-component layer containing a plurality of numbers of repetitions of a unit of a buffer layer and a single-crystal layer.

8. 发明授权

US06861305B2 Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices 失效
标题翻译：制备III族氮化物化合物半导体和III族氮化物化合物半导体器件的方法
公开(公告)号：US06861305B2
公开(公告)日：2005-03-01
申请号：US10240249
申请日：2001-03-29
申请人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
发明人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
IPC分类号： H01L21/20 , H01L21/205 , H01L33/00 , H01L21/8238
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations. A GaN layer 31 is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, strip, or grid, thereby providing a trench/mesa structure, and a mask 4 is formed at the bottom of the trench such that the upper surface of the mask 4 is positioned below the top surface of the GaN layer 31. A GaN layer 32 is lateral-epitaxially grown with the top surface 31a of the mesa and sidewalls 31b of the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer 32 formed above the mask 4 through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer is 31 can be prevented.
摘要翻译：本发明提供了具有抑制的穿透位错产生的III族氮化物化合物半导体。对GaN层31进行蚀刻，以形成例如点状，带状或栅格的形状的岛状结构，从而提供沟槽/台面结构，并且在底部形成掩模4 使得掩模4的上表面位于GaN层31的顶表面之下。GaN层32被侧壁外延生长，台面的顶表面31a和用作核的沟槽的侧壁31b ，从而埋入沟槽，然后在垂直方向进行外延生长。在通过横向外延生长在掩模4上方形成的GaN层32的上部区域中，可以防止包含在GaN层中的穿透位错的传播为31。

9. 发明授权

US06486068B2 Method for manufacturing group III nitride compound semiconductor laser diodes 失效
标题翻译：制造III族氮化物半导体激光二极管的方法
公开(公告)号：US06486068B2
公开(公告)日：2002-11-26
申请号：US09004608
申请日：1998-01-08
申请人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
发明人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
IPC分类号： H01L21302
CPC分类号： H01S5/0201 , H01S5/0203 , H01S5/32341
摘要： A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
摘要翻译：一种使用III族氮化物化合物半导体制造激光二极管的方法，包括缓冲层2，n +层3，包覆层4，有源层5，p型覆层61，接触层62，SiO 2层如图9所示，形成在形成在SiO 2层9的一部分上的窗口上的电极7和通过从接触层62蚀刻4层的一部分而形成在n +层3的一部分上的电极8，通过RIBE形成空腔的一对相对面S，然后通过使用Ar气体的气体簇离子束蚀刻蚀刻该刻面。结果，小面S变平，并且小面S的镜面反射得到改善。

10. 发明授权

US06821800B2 Semiconductor light-emitting device and manufacturing method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06821800B2
公开(公告)日：2004-11-23
申请号：US10326398
申请日：2002-12-23
申请人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
发明人： Norikatsu Koide , Shinya Asami , Junichi Umezaki , Masayoshi Koike , Shiro Yamasaki , Seiji Nagai
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/155 , H01L33/06 , Y10S438/933
摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
摘要翻译：在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

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