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21. 发明授权

US09331207B2 Oxide semiconductor device and manufacturing method therof 有权
标题翻译：氧化物半导体器件及其制造方法
公开(公告)号：US09331207B2
公开(公告)日：2016-05-03
申请号：US13937591
申请日：2013-07-09
申请人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
发明人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/201
CPC分类号： H01L29/7869 , H01L29/201
摘要： A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.
摘要翻译：半导体器件包括栅电极; 栅电极上的栅极绝缘膜; 与所述栅极绝缘膜接触并且包括与所述栅电极重叠的沟道形成区域的氧化物半导体膜; 氧化物半导体膜上的源电极和漏电极; 以及氧化物半导体膜，源电极和漏电极上的氧化物绝缘膜。源极电极和漏极电极各自包括在沟道形成区域的端部具有端部的第一金属膜，在第一金属膜上的含有铜的第二金属膜和在第二金属膜上的第三金属膜。第二金属膜形成在比第一金属膜的端部的内侧。

22. 发明授权

US08426295B2 Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device 有权
标题翻译：微晶硅膜的制造方法和半导体器件的制造方法
公开(公告)号：US08426295B2
公开(公告)日：2013-04-23
申请号：US13267257
申请日：2011-10-06
申请人： Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi , Yoshitaka Yamamoto
发明人： Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi , Yoshitaka Yamamoto
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/28008 , H01L29/04 , H01L29/6675
摘要： To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.
摘要翻译：提供具有高结晶度和高膜密度的微晶硅膜的制造方法。在本发明的微晶硅膜的制造方法中，在第一条件下，在绝缘膜上形成包含混晶相的第一微晶硅膜，在第二条件下形成第二微晶硅膜。第一条件和第二条件是使用含硅和含氢气体的沉积气体作为第一源气体和第二源气体的条件。在第一条件下以第一气体的供给和第二气体的供给交替进行的方式供给第一源气体。

23. 发明授权

US07608891B2 Thin film transistor, circuit apparatus and liquid crystal display 有权
标题翻译：薄膜晶体管，电路设备和液晶显示器
公开(公告)号：US07608891B2
公开(公告)日：2009-10-27
申请号：US11469748
申请日：2006-09-01
申请人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
发明人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
IPC分类号： H01L27/01
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78618 , H01L29/78675
摘要： A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.
摘要翻译：薄膜晶体管包括一个导电型半导体层（11）; 源区域（12）和漏极区域（13），其分开设置在所述半导体层中; 和设置在半导体层的上方或下方的绝缘膜的栅电极（14），其中源极区域和沟道（16）之间的接合面的宽度（Ws）设置在源区域和漏极之间区域与上述沟道区域和漏极区域之间的接合面的宽度（Wd）不同。

24. 发明授权

US07087505B2 Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same 有权
公开(公告)号：US07087505B2
公开(公告)日：2006-08-08
申请号：US10755303
申请日：2004-01-13
申请人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
发明人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

25. 发明申请

US20060124971A1 Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same 审中-公开
标题翻译：半导体结构，半导体器件及其制造方法和装置
公开(公告)号：US20060124971A1
公开(公告)日：2006-06-15
申请号：US11335470
申请日：2006-01-20
申请人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Yoshitaka Yamamoto , Masakiyo Matsumura
发明人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Yoshitaka Yamamoto , Masakiyo Matsumura
IPC分类号： H01L29/768
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.
摘要翻译：半导体器件包括非单晶半导体膜，支撑非单晶半导体膜的支撑衬底和具有部分非单晶半导体膜作为沟道区的有源器件。特别地，沟道区的氧浓度不高于1×10 18原子/ cm 3，碳浓度不高于1×10 18原子 / cm 3。

26. 发明授权

US06987035B2 Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus 失效
标题翻译：用于形成结晶半导体层的方法和装置，以及半导体装置的制造方法
公开(公告)号：US06987035B2
公开(公告)日：2006-01-17
申请号：US10857941
申请日：2004-06-02
申请人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
发明人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66772
摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
摘要翻译：一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射，能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

27. 发明授权

US06523432B1 Shock-absorbing steering assembly 有权
标题翻译：减震转向组件
公开(公告)号：US06523432B1
公开(公告)日：2003-02-25
申请号：US09655835
申请日：2000-09-06
申请人： Yoshitaka Yamamoto , Koji Yoshioka , Noboru Minamoto
发明人： Yoshitaka Yamamoto , Koji Yoshioka , Noboru Minamoto
IPC分类号： B60K2000
CPC分类号： B62D1/195
摘要： A lower bracket for mounting a steering column to a vehicle body is formed as a single element that is fixed to the vehicle body by inserting a bolt with a collar therethrough. Upon application of an impact load, the lower bracket forces the bolt and collar into a path of a smaller width than the collar thereby plastically deforming an edge portion of the path for absorption of the impact energy.
摘要翻译：用于将转向柱安装到车身上的下支架形成为通过将带有套环的螺栓插入其中而固定到车身的单个元件。在施加冲击载荷时，下支架迫使螺栓和套环进入比轴环的较小宽度的路径，从而使路径的边缘部分塑性变形以吸收冲击能量。

28. 发明授权

US06304307B1 Liquid crystal display and method of manufacturing the same 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US06304307B1
公开(公告)日：2001-10-16
申请号：US09148531
申请日：1998-09-04
申请人： Takeshi Nishi , Toshimitsu Konuma , Takahiro Tsuji , Yoshitaka Yamamoto , Masahiro Adachi , Kiyoshi Ogishima
发明人： Takeshi Nishi , Toshimitsu Konuma , Takahiro Tsuji , Yoshitaka Yamamoto , Masahiro Adachi , Kiyoshi Ogishima
IPC分类号： G02F11345
CPC分类号： G02F1/13392 , G02F1/13454
摘要： There is provided an active matrix liquid crystal display having high reliability with improved yield of production. In an active matrix liquid crystal display in which peripheral driving circuits are in contact with a liquid crystal material, spacers are dispersed in peripheral driving circuit regions in a density lower than that in a pixel region to reduce damage to the peripheral driving circuits and to improve production yield and reliability of products.
摘要翻译：提供了具有高可靠性和提高的生产率的有源矩阵液晶显示器。在外围驱动电路与液晶材料接触的有源矩阵液晶显示器中，间隔物以密度分散在外围驱动电路区域中低于像素区域，以减少对外围驱动电路的损坏并提高产品的产量和可靠性。

29. 发明授权

US6162667A Method for fabricating thin film transistors 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US6162667A
公开(公告)日：2000-12-19
申请号：US408869
申请日：1995-03-23
申请人： Takashi Funai , Naoki Makita , Yoshitaka Yamamoto , Tadayoshi Miyamoto , Takamasa Kousai , Masashi Maekawa
发明人： Takashi Funai , Naoki Makita , Yoshitaka Yamamoto , Tadayoshi Miyamoto , Takamasa Kousai , Masashi Maekawa
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/00
CPC分类号： H01L27/12 , H01L27/1277 , H01L29/66757
摘要： In a fabrication of a semiconductor device, an amorphous semiconductor film is first formed on a substrate having an insulating surface. Then, a minute amount of catalyst elements for accelerating crystallization of the amorphous semiconductor film is supplied to at least a portion of a surface of the amorphous semiconductor film. A heat treatment is further conducted so that the supplied catalyst elements are diffused into the amorphous semiconductor film. Thus, the catalyst elements are introduced uniformly into the amorphous semiconductor film in a very minute amount or at a low concentration, resulting in polycrystallization of at least a portion of the amorphous semiconductor film. Utilizing the thus obtained crystalline semiconductor film on the substrate surface as an active region, a semiconductor device such as a TFT is fabricated. The introduction of the catalyst elements are conducted by various methods such as: a formation of a film containing a minute amount of the catalyst elements; application of a solution containing the catalyst elements in several spin coating cycles; diffusion of the catalyst elements through a buffer layer; dipping into a solution in which the catalyst elements are dissolved or dispersed; or formation of a plating layer containing the catalyst elements.
摘要翻译：在半导体器件的制造中，首先在具有绝缘表面的衬底上形成非晶半导体膜。然后，将少量用于加速非晶半导体膜的结晶的催化剂元素供给到非晶半导体膜的表面的至少一部分。进一步进行热处理，使得所提供的催化剂元素扩散到非晶半导体膜中。因此，催化剂元素以非常微量或低浓度均匀地引入到非晶半导体膜中，导致至少一部分非晶半导体膜的多晶化。利用由此获得的晶体半导体膜作为有源区，在衬底表面上制造诸如TFT的半导体器件。催化剂元素的引入通过各种方法进行，例如：形成含有微量催化剂元素的膜; 在几个旋涂周期中应用含有催化剂元素的溶液; 催化剂元件通过缓冲层的扩散; 浸入催化剂元素溶解或分散的溶液中; 或形成含有催化剂元素的镀层。

30. 发明授权

US5955204A Transfer material and transfer product 失效
标题翻译：转移材料和转移产品
公开(公告)号：US5955204A
公开(公告)日：1999-09-21
申请号：US705783
申请日：1996-08-30
申请人： Yoshitaka Yamamoto , Yuzou Nakamura , Shigeru Shibata
发明人： Yoshitaka Yamamoto , Yuzou Nakamura , Shigeru Shibata
IPC分类号： B44C1/17 , B32B27/30
CPC分类号： B44C1/1737 , Y10S428/913 , Y10S428/914
摘要： A transfer material is constituted by including an ultraviolet absorbing layer containing an acrylic high polymer in which a skeleton having an ultraviolet absorbing property is introduced into molecular chains, the ultraviolet absorbing layer being provided on a substrate sheet having a mold-releasability and serving as one constituent layer of a transfer layer of the transfer material. A transfer product is constituted in that the ultraviolet absorbing layer provided on the surface of the product contains an acrylic high polymer in which a skeleton having an ultraviolet absorbing property is introduced to molecular chains.
摘要翻译：转印材料通过将含有具有紫外线吸收性的骨架的丙烯酸类高分子的紫外线吸收层包含在分子链中而形成，紫外线吸收层设置在具有脱模性的基板上，作为一体转印材料的转印层的构成层。转印产品的结构是，在产品表面上设置的紫外线吸收层含有将具有紫外线吸收性的骨架引入分子链的丙烯酸类高分子。

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