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21. 发明授权

US06632478B2 Process for forming a low dielectric constant carbon-containing film 失效
标题翻译：用于形成低介电常数含碳膜的方法
公开(公告)号：US06632478B2
公开(公告)日：2003-10-14
申请号：US09791989
申请日：2001-02-22
申请人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
发明人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
IPC分类号： C23C1640
CPC分类号： B05D1/60 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3146 , H01L21/31633
摘要： An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.
摘要翻译：本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。此外，提供了沉积在转化和氢等离子体处理层上的覆盖层

22. 发明授权

US06593247B1 Method of depositing low k films using an oxidizing plasma 有权
标题翻译：使用氧化等离子体沉积低k膜的方法
公开(公告)号：US06593247B1
公开(公告)日：2003-07-15
申请号：US09553461
申请日：2000-04-19
申请人： Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David W. Cheung , Ralf B. Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad K. Moghadam , Yeming Jim Ma
发明人： Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David W. Cheung , Ralf B. Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad K. Moghadam , Yeming Jim Ma
IPC分类号： H01L2131
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1031
摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm2 and about 3.2 W/cm2. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH3)3SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
摘要翻译：氧化硅层通过有机硅化合物的等离子体增强氧化制备，以沉积碳原子量至少为1％的膜。通过以小于或等于有机硅化合物的流速的流量将氧引入处理室，并且以0.9W / cm 2的功率密度产生等离子体来沉积具有低水分含量和耐开裂性的膜和约3.2W / cm 2。可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。有机硅化合物优选与每个硅原子键合2或3个碳原子，例如三甲基硅烷，（CH 3）3 SiH。可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

23. 发明授权

US06583497B2 Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing 失效
标题翻译：表面处理c掺杂的SiO 2膜，以提高O2在灰化期间的稳定性
公开(公告)号：US06583497B2
公开(公告)日：2003-06-24
申请号：US10192274
申请日：2002-07-09
申请人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2358
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31612 , H01L21/31633
摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.
摘要翻译：一种在衬底上形成绝缘层的方法。该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。碳掺杂氧化硅层随后被固化和致密化。在一个实施方案中，固化膜在含氮等离子体中致密化。该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。和臭氧。上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。

24. 发明授权

US06465366B1 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers 失效
标题翻译：双频等离子体增强化学气相沉积碳化硅层
公开(公告)号：US06465366B1
公开(公告)日：2002-10-15
申请号：US09660268
申请日：2000-09-12
申请人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
发明人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/76829 , C23C16/325 , C23C16/505 , H01L21/0276 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/7681
摘要： A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RF) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.
摘要翻译：公开了一种用于形成用于集成电路制造的碳化硅层的方法。通过在电场的存在下使包含硅源，碳源和惰性气体的气体混合物反应来形成碳化硅层。使用混频射频（RF）功率产生电场。碳化硅层与集成电路制造工艺兼容。在一个集成电路制造工艺中，碳化硅层用作用于制造集成电路结构的硬掩模，例如镶嵌结构。在另一个集成电路制造工艺中，碳化硅层用作用于DUV光刻的抗反射涂层（ARC）。

25. 发明授权

US6114216A Methods for shallow trench isolation 失效
标题翻译：浅沟槽隔离方法
公开(公告)号：US6114216A
公开(公告)日：2000-09-05
申请号：US746631
申请日：1996-11-13
申请人： Ellie Yieh , Li-Qun Xia , Srinivas Nemani
发明人： Ellie Yieh , Li-Qun Xia , Srinivas Nemani
IPC分类号： H01L21/76 , C23C16/02 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/225 , H01L21/31 , H01L21/316 , H01L21/762
CPC分类号： C23C16/45565 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/4411 , C23C16/4412 , C23C16/45561 , C23C16/4586 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02362 , H01L21/2255 , H01L21/31612 , H01L21/31625
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

26. 发明授权

US6099647A Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films 有权
标题翻译：使用掺杂氧化硅膜形成超浅掺杂区域的方法和装置
公开(公告)号：US6099647A
公开(公告)日：2000-08-08
申请号：US409763
申请日：1999-09-30
申请人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
发明人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
IPC分类号： C23C16/40 , C23C16/44 , C23C16/509 , C23C16/52 , H01L21/225 , H01L21/31 , H01L21/316 , H01L21/336 , H01L21/762 , C23C16/00
CPC分类号： C23C16/401 , C23C16/402 , C23C16/4405 , C23C16/4412 , C23C16/5096 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02312 , H01L21/02315 , H01L21/0234 , H01L21/02362 , H01L21/2255 , H01L21/31625 , H01L21/76237 , H01L29/66575
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

27. 发明授权

US5994209A Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films 失效
公开(公告)号：US5994209A
公开(公告)日：1999-11-30
申请号：US748094
申请日：1996-11-13
申请人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
发明人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
IPC分类号： C23C16/40 , C23C16/44 , C23C16/509 , C23C16/52 , H01L21/225 , H01L21/31 , H01L21/316 , H01L21/336 , H01L21/762 , H01L21/24 , H01L21/40
CPC分类号： C23C16/401 , C23C16/402 , C23C16/4405 , C23C16/4412 , C23C16/5096 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02312 , H01L21/02315 , H01L21/0234 , H01L21/02362 , H01L21/2255 , H01L21/31625 , H01L21/76237 , H01L29/66575
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

28. 发明授权

US07435685B2 Method of forming a low-K dual damascene interconnect structure 失效
标题翻译：形成低K双镶嵌互连结构的方法
公开(公告)号：US07435685B2
公开(公告)日：2008-10-14
申请号：US11531493
申请日：2006-09-13
申请人： Gerardo A. Delgadino , Yan Ye , Neungho Shin , Yunsang Kim , Li-Qun Xia , Tzu-Fang Huang , Lihua Li Huang , Joey Chiu , Xiaoye Zhao , Fang Tian , Wen Zhu , Ellie Yieh
发明人： Gerardo A. Delgadino , Yan Ye , Neungho Shin , Yunsang Kim , Li-Qun Xia , Tzu-Fang Huang , Lihua Li Huang , Joey Chiu , Xiaoye Zhao , Fang Tian , Wen Zhu , Ellie Yieh
IPC分类号： H01L21/311
CPC分类号： H01L21/76826 , H01L21/76811 , H01L21/76813
摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.
摘要翻译：一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。通孔由形成在光致抗蚀剂层中的图案限定。然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为进一步蚀刻到下部低K介电层中。结果是低K电介质双镶嵌结构。

29. 发明授权

US07326657B2 Post-deposition treatment to enhance properties of Si-O-C low k films 有权
标题翻译：后沉积处理以提高Si-O-C低k膜的性能
公开(公告)号：US07326657B2
公开(公告)日：2008-02-05
申请号：US10990251
申请日：2004-11-15
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

30. 发明授权

US06943127B2 CVD plasma assisted lower dielectric constant SICOH film 失效
标题翻译： CVD等离子体辅助低介电常数SICOH膜
公开(公告)号：US06943127B2
公开(公告)日：2005-09-13
申请号：US10302240
申请日：2002-11-22
申请人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
发明人： Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
IPC分类号： C23C16/30 , H01L21/316 , H01L21/42
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , Y10S438/931 , Y10T428/31909
摘要： A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
摘要翻译：提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

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