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21. 发明申请

US20050087853A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050087853A1
公开(公告)日：2005-04-28
申请号：US10855889
申请日：2004-05-28
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/12 , H01L23/48 , H01L25/065 , H01L25/07 , H01L25/18 , H01L23/02 , H05K7/02
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

22. 发明授权

US06793832B1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US06793832B1
公开(公告)日：2004-09-21
申请号：US09807896
申请日：2001-04-19
申请人： Takeshi Saito , Kazuya Nagaseki
发明人： Takeshi Saito , Kazuya Nagaseki
IPC分类号： H01L21306
CPC分类号： H01J37/32082 , H01J37/32706 , H01L21/31116
摘要： A wafer W is placed on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100 and a gas containing C4F8 is induced into the processing chamber 102. A controller 112 implements control to apply 27 MHz power to an upper electrode 114 from a plasma generating power supply 120 and to intermittently apply 800 KHz power to the lower electrode 106 from a biasing power supply 108. While the biasing power is on, an insulating film 202 constituted of SiO2 at the wafer W is etched, whereas a polymer (protective film) 208 is formed at a photoresist film 206 while the biasing power is off. Adopting the above method, contact holes achieving a specific shape can be formed by improving the selectivity of the insulating film relative to the photoresist film.
摘要翻译：将晶片W放置在设置在蚀刻装置100的处理室102内部的下电极106上，并且将含有C4F8的气体感应到处理室102中。控制器112实施控制以将上述电极施加27MHz的功率从上电极114 等离子体发生电源120，并且从偏置电源108间歇地向下电极106施加800KHz的功率。当偏置功率接通时，在晶片W上由SiO 2构成的绝缘膜202被蚀刻，而聚合物保护膜）208形成在光致抗蚀剂膜206上，同时偏压功率关闭。采用上述方法，可以通过提高绝缘膜相对于光致抗蚀剂膜的选择性来形成达到特定形状的接触孔。

23. 发明授权

US08941037B2 Substrate processing apparatus, focus ring heating method, and substrate processing method 有权
标题翻译：基板加工装置，聚焦环加热方法和基板处理方法
公开(公告)号：US08941037B2
公开(公告)日：2015-01-27
申请号：US11950773
申请日：2007-12-05
申请人： Daisuke Hayashi , Kazuya Nagaseki
发明人： Daisuke Hayashi , Kazuya Nagaseki
IPC分类号： H05B6/10 , H05B6/36 , H01L21/687 , H01J37/32 , H01L21/67 , H01L21/683
CPC分类号： H01L21/68735 , H01J37/32522 , H01J37/32642 , H01J37/32706 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H05B6/105
摘要： A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.
摘要翻译：一种基板处理装置，其可以在施加射频电力的同时，不会引起异常放电和射频电力的反向流动而精确地控制聚焦环的温度。晶片安装在设置在容纳室中的安装台上。环形聚焦环以围绕安装晶片的周边部分的方式安装在安装台上。容纳室中的压力减小，射频电力施加到安装台，并且聚焦环自身产生热量。

24. 发明授权

US08821683B2 Substrate processing apparatus and method, and program and storage medium 有权
标题翻译：基板处理装置和方法以及程序和存储介质
公开(公告)号：US08821683B2
公开(公告)日：2014-09-02
申请号：US11410120
申请日：2006-04-25
申请人： Yusuke Hirayama , Kazuya Nagaseki
发明人： Yusuke Hirayama , Kazuya Nagaseki
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/321 , H01J37/32623 , H01L21/3065
摘要： A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.
摘要翻译：基板处理装置包括面向基板的等离子体源和设置在基板和等离子体源之间的屏蔽部件。等离子体源径向漫射等离子体，屏蔽构件具有通孔，通过该通孔使一部分径向扩散的等离子体通过。使用基板处理方法在基板处理装置中对基板进行等离子体处理，所述基板处理装置包括面向基板的等离子体源和设置在等离子体源与基板之间的屏蔽部件。屏蔽构件具有通孔。该方法包括通过等离子体源径向漫射等离子体的步骤。

25. 发明申请

US20100314356A1 METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS 有权
标题翻译：在等离子体加工设备中使用消耗部件的方法
公开(公告)号：US20100314356A1
公开(公告)日：2010-12-16
申请号：US12813819
申请日：2010-06-11
申请人： Nobuyuki NAGAYAMA , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
发明人： Nobuyuki NAGAYAMA , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
IPC分类号： B44C1/22
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.
摘要翻译：在重新使用等离子体处理装置中的消耗部件的方法中，通过化学气相沉积（CVD）沉积SiC形成碳化硅（SiC）块，并且通过将等离子体处理装置的消耗部件 SiC块，该消耗部件具有预定的形状。通过使用制造的消耗部件在基板上进行第一等离子体处理。已经被等离子体处理侵蚀的可消耗部件的表面经过一段干净的处理一段时间。通过CVD将SiC沉积在被腐蚀的消耗部件的清洁表面上。具有预定形状的消耗部件通过处理具有沉积SiC的表面的侵蚀的消耗部件来再制造。通过使用再制造的消耗部件在基板上进行第二等离子体处理。

26. 发明授权

US07794616B2 Etching gas, etching method and etching gas evaluation method 有权
标题翻译：蚀刻气体，蚀刻方法和蚀刻气体评估方法
公开(公告)号：US07794616B2
公开(公告)日：2010-09-14
申请号：US11199085
申请日：2005-08-09
申请人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
发明人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： C03C15/00 , C03C17/23 , C03C2217/213 , C03C2218/33 , C09K13/08
摘要： An etching gas for etching an oxide film formed on a substrate, includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a straight-chain saturated fluorocarbon-based gas expressed by CXF(2X+2) (x represents a natural number of 5 or larger). The additive gas is C5F12 gas, C6F14 gas or C7F16 gas. Another etching gas includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a cyclic saturated fluorocarbon-based gas expressed by CXF2X (X represents a natural number of 5 or larger). In this case, the additive gas is C5F10 gas or C6F12 gas.
摘要翻译：用于蚀刻形成在基板上的氧化膜的蚀刻气体包括由不饱和氟烃类气体构成的主气体; 和由CXF（2X + 2）表示的直链饱和碳氟化合物气体（x表示5以上的自然数）构成的添加气体。添加气体为C5F12气体，C6F14气体或C7F16气体。另一蚀刻气体包括由不饱和氟烃基气体组成的主气体; 和由CXF2X（X表示5以上的自然数）表示的环状饱和碳氟化合物气体构成的添加气体。在这种情况下，添加气体是C5F10气体或C6F12气体。

27. 发明授权

US07767055B2 Capacitive coupling plasma processing apparatus 有权
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US07767055B2
公开(公告)日：2010-08-03
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

28. 发明申请

US20080257494A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20080257494A1
公开(公告)日：2008-10-23
申请号：US12022803
申请日：2008-01-30
申请人： Daisuke Hayashi , Kazuya Nagaseki
发明人： Daisuke Hayashi , Kazuya Nagaseki
IPC分类号： C23F1/02 , C23C16/52
CPC分类号： C23C16/4583 , C23C16/46 , C23C16/466 , H01J37/20 , H01J2237/2001 , H01L21/02071 , H01L21/67109
摘要： A substrate processing apparatus capable of rapidly raising and lowering the processing temperature of a substrate. The substrate processing apparatus has a mounting stage adapted to be mounted with a substrate and to control the processing temperature of the mounted substrate. The mounting stage comprises a temperature control device disposed in a mounting surface of the mounting stage for mounting the substrate thereon, a coolant inflow chamber into which a coolant is flowed, and a heat transmission/insulation switch-over chamber disposed between the temperature control device and the coolant inflow chamber so that a heat-transmitting gas is flowed into and vacuum-exhausted from the heat transmission/insulation switch-over chamber. The temperature control device has therein a gas inflow chamber into which a hot gas is flowed.
摘要翻译：能够快速提高和降低基板的处理温度的基板处理装置。基板处理装置具有适于安装有基板并且控制安装的基板的处理温度的安装台。安装台包括设置在安装台的安装表面上的温度控制装置，用于将基板安装在其上，冷却剂流入室，冷却剂流过该冷却剂流入室，以及布置在温度控制装置和冷却剂流入室，使得传热气体从传热/绝缘切换室流入并真空排出。温度控制装置在其中具有流入热气体的气体流入室。

29. 发明授权

US06365060B1 Method for controlling plasma processor 有权
标题翻译：等离子体处理器的控制方法
公开(公告)号：US06365060B1
公开(公告)日：2002-04-02
申请号：US09485935
申请日：2000-02-18
申请人： Kazuya Nagaseki , Hiroki Yamazaki
发明人： Kazuya Nagaseki , Hiroki Yamazaki
IPC分类号： H05H146
CPC分类号： H01J37/32082 , H01J37/32706 , H01L21/3065
摘要： A lower electrode 106 on which a wafer W can be placed and an upper electrode 108 are provided facing each other inside a processing chamber 102 of an etching apparatus 100. A first high frequency power supply 116 capable of outputting high frequency power for plasma generation is connected to the upper electrode 108 via a first matching device 114. A second high frequency power supply 122 capable of outputting high frequency power for biasing having a frequency lower than the frequency of the high frequency power for plasma generation is connected to the lower electrode 106 via a second matching device 120. Power that enables, at least, matching of the high frequency power for biasing is applied to the lower electrode 106 concurrently with the application of the high frequency power for plasma generation at a stable power level to the upper electrode 108. When the matching period has elapsed, the high frequency power for biasing applied to the lower electrode 106 is raised to the stable power level. This structure prevents any reduction in the plasma density and any excess voltage occurring at the electrodes when the high frequency power for biasing is applied.
摘要翻译：可以在蚀刻装置100的处理室102内面向彼此面对地设置有可以放置晶片W的下部电极106和上部电极108.能够输出用于等离子体产生的高频电力的第一高频电源116是经由第一匹配装置114与上电极108连接。能够输出频率低于用于等离子体产生的高频功率的频率的偏置的高频功率的第二高频电源122连接到下电极106 通过第二匹配装置120，至少能够使用于偏置的高频功率的匹配的功率被施加到下电极106，同时施加用于等离子体产生的高频功率，以稳定的功率水平向上电极当匹配时间过去时，施加到下电极106的偏压的高频功率被提高到刺功率级别。当施加用于偏置的高频功率时，该结构防止等离子体密度和在电极处发生的任何过量电压的任何降低。

30. 发明授权

US5539274A Electron beam excited plasma system 失效
标题翻译：电子束激发等离子体系统
公开(公告)号：US5539274A
公开(公告)日：1996-07-23
申请号：US301566
申请日：1994-09-07
申请人： Youichi Araki , Kazuya Nagaseki , Shuji Mochizuki
发明人： Youichi Araki , Kazuya Nagaseki , Shuji Mochizuki
IPC分类号： H01J37/32 , H05H1/24 , H05H1/50 , H05H1/16
CPC分类号： H01J37/3266 , H01J37/3233 , H05H1/24 , H05H1/50
摘要： An electron beam excited plasma system is provided with a first auxiliary electrode for initial discharge, an anode having an opening, a cathode, having an opening and located between the anode and the first auxiliary electrode, for producing an initial discharge between the first auxiliary electrode and the cathode, and for producing a plasma-generating discharge between the anode and the cathode, a second auxiliary electrode, having an opening and located between the cathode and the anode, for facilitating the generation of the discharge plasma between the cathode and the anode, a gas supply device for supplying a discharge plasma-generating gas into the region between the cathode and the anode, and magnetic field generator for generating a magnetic field and for applying this magnetic field to the region between the cathode and the anode, such that a cusp magnetic field is generated in the vicinity of the cathode.
摘要翻译：电子束激发等离子体系具有用于初始放电的第一辅助电极，具有开口的阳极，具有开口并位于阳极和第一辅助电极之间的阴极，用于在第一辅助电极之间产生初始放电和阴极，并且用于在阳极和阴极之间产生等离子体产生放电，具有开口并位于阴极和阳极之间的第二辅助电极，以便于在阴极和阳极之间产生放电等离子体用于将放电等离子体产生气体供应到阴极和阳极之间的区域中的气体供应装置和用于产生磁场并用于将该磁场施加到阴极和阳极之间的区域的磁场发生器，使得在阴极附近产生尖点磁场。

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