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21. 发明授权

US5279077A Method for producing semiconductor wafer 失效
标题翻译：半导体晶片的制造方法
公开(公告)号：US5279077A
公开(公告)日：1994-01-18
申请号：US977154
申请日：1992-11-16
申请人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
发明人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
IPC分类号： H01L21/02 , B28D5/00 , C30B33/00 , H01L21/68 , B24B49/00
CPC分类号： B28D5/0005 , B28D5/0011 , C30B33/00 , Y10T428/219 , Y10T428/24273 , Y10T428/24298 , Y10T428/24306 , Y10T428/24314 , Y10T428/24479 , Y10T428/2457 , Y10T428/24777
摘要： In a method for forming a semiconductor wafer with an orientation flat along a cleavage plane, a groove or hole is formed in the substrate on a line along which the substrate is cleaved to form an orientation flat and the substrate is treated to produce a mirrorlike surface. Then, the substrate having the mirrorlike surface is cleaved from the groove or hole to form the orientation flat. Accordingly, edges of the cleavage plane are not rounded due to the surface treatment. In addition, the substrate is easily cleaved along the cleavage plane from the groove or the hole. As a result, a semiconductor wafer having a sharp cleavage plane as an orientation flat is produced with improved yield, and alignment is performed with high precision in a subsequent process, such as photolithography.
摘要翻译：在沿着解理面形成具有取向平坦的半导体晶片的方法中，在基板上的基板上形成凹槽或孔，沿着基板被切割以形成取向平面，并且将基板处理以产生反射镜表面。然后，具有镜面表面的基板从凹槽或孔中分离以形成取向平面。因此，由于表面处理，解理面的边缘不会变圆。此外，衬底沿着解理平面容易地从凹槽或孔中裂开。结果，以提高的产量制造具有作为取向平面的尖锐解理面的半导体晶片，并且在随后的工艺（例如光刻）中以高精度进行对准。

22. 发明授权

US4667332A Semiconductor laser element suitable for production by a MO-CVD method 失效
标题翻译：半导体激光元件适用于通过MO-CVD法制造
公开(公告)号：US4667332A
公开(公告)日：1987-05-19
申请号：US700017
申请日：1985-02-08
申请人： Yutaka Mihashi , Yutaka Nagai
发明人： Yutaka Mihashi , Yutaka Nagai
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2237
摘要： A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.
摘要翻译：半导体激光元件包括设置在第一导电类型的半导体衬底上的第一导电类型的第一包层; 第二导电类型的电流阻挡层设置在第一包层上，具有条纹槽，第一包覆层从底部露出; 所述第一导电类型的导光层覆盖所述电流阻挡层，所述条纹槽和从所述槽露出的所述第一包层; 设置在所述导光层上的有源层，所述有源层在所述条纹槽附近弯曲，折射率大于所述导光层的折射率; 以及设置在有源层上的第二导电类型的第二包覆层，其折射率小于有源层的折射率。

23. 发明授权

US06275515B1 Semiconductor laser device and method of producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06275515B1
公开(公告)日：2001-08-14
申请号：US09238170
申请日：1999-01-28
申请人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
发明人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
IPC分类号： H01S500
CPC分类号： H01L33/30 , H01S5/2231 , H01S5/3235 , H01S5/32358 , H01S5/32383
摘要： A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
摘要翻译： GaAs衬底上的半导体激光器件，其振荡波长为1.3μm或1.55μm，以及制造该激光器件的方法。激光器件具有与GaAs衬底晶格匹配的BT1GaAs有源层。为了生长BTlGaAs活性层，使用有机金属气相沉积作为Tl的来源的环戊二烯基铊。

24. 发明授权

US6018539A Semiconductor laser and method of fabricating semiconductor laser 失效
标题翻译：半导体激光器和制造半导体激光器的方法
公开(公告)号：US6018539A
公开(公告)日：2000-01-25
申请号：US20857
申请日：1998-02-09
申请人： Tatsuya Kimura , Motohalu Miyashita , Yutaka Mihashi
发明人： Tatsuya Kimura , Motohalu Miyashita , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/026 , H01S5/106 , H01S5/1064 , H01S5/16 , H01S5/2077 , H01S5/2272
摘要： A semiconductor laser includes a first conductivity type semiconductor substrate having a gain region and a spot size changing region adjacent each other; a first conductivity type lower cladding layer disposed on the substrate; an active layer disposed on the lower cladding layer and having a thickness which is uniform in the gain region and gradually decreases in the spot size changing region with distance from the gain region; a second conductivity type upper cladding layer disposed on the active layer and having a stripe-shaped ridge, the ridge extending along the gain region and the spot size changing region; a first electrode disposed on the ridge of the upper cladding layer; and a second electrode disposed on a rear surface of the substrate. Current flow is concentrated in the ridge of the upper cladding layer. Further, when the ridge is fabricated, portions of the active layer in which a current will be injected during operation of the laser are not exposed to the atmosphere and not oxidized, resulting in a highly reliable semiconductor laser with an integrated spot size changing part and gain part.
摘要翻译：半导体激光器包括具有增益区域和彼此相邻的光斑尺寸变化区域的第一导电型半导体衬底; 设置在所述基板上的第一导电型下包层; 有源层，其设置在所述下包层上并且具有在所述增益区域中均匀的厚度，并且随着与所述增益区域的距离而在所述光点尺寸变化区域中逐渐减小; 第二导电型上包层，设置在有源层上并且具有条状脊，所述脊沿着增益区域延伸并且光斑尺寸改变区域; 设置在上包层的脊上的第一电极; 以及设置在所述基板的后表面上的第二电极。电流集中在上包层的脊中。此外，当制造脊时，在激光器操作期间将注入电流的有源层的部分不暴露于大气并且不被氧化，导致具有集成的点尺寸变化部分的高度可靠的半导体激光器，获得部分。

25. 发明授权

US5880485A Semiconductor device including Gallium nitride layer 失效
标题翻译：包括氮化镓层的半导体器件
公开(公告)号：US5880485A
公开(公告)日：1999-03-09
申请号：US927692
申请日：1997-09-11
申请人： Diethard Marx , Zempei Kawazu , Yutaka Mihashi
发明人： Diethard Marx , Zempei Kawazu , Yutaka Mihashi
IPC分类号： H01L33/00 , H01S5/02 , H01S5/183 , H01S5/22 , H01S5/323
CPC分类号： H01S5/18308 , H01L33/007 , H01L33/0075 , H01S5/22 , H01S5/32341 , H01S2301/173 , H01S2304/12 , H01S5/0213 , H01S5/3202
摘要： A high-quality gallium nitride layer is grown on a surface of a substrate which is exposed through a dielectric mask on the substrate. The high-quality gallium nitride layer has a composition expressed by the chemical formula:Ga.sub.x Al.sub.y In.sub.z N (I)wherein 0
摘要翻译：在衬底的表面上生长高质量的氮化镓层，该衬底的表面通过衬底上的电介质掩模露出。高质量的氮化镓层具有以下化学式表示的组成：其中0

26. 发明授权

US5835516A Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US5835516A
公开(公告)日：1998-11-10
申请号：US569881
申请日：1995-12-08
申请人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
发明人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
IPC分类号： H01L21/306 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/32316
摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.
摘要翻译：一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构，以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

27. 发明授权

US5518955A Method of fabricating quantum wire 失效
标题翻译：量子线制造方法
公开(公告)号：US5518955A
公开(公告)日：1996-05-21
申请号：US385168
申请日：1995-02-07
申请人： Katsuhiko Goto , Yutaka Mihashi
发明人： Katsuhiko Goto , Yutaka Mihashi
IPC分类号： H01S5/00 , H01L21/20 , H01S5/12 , H01S5/227 , H01S5/34
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02494 , H01L21/02543 , H01L21/02546 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01S5/12 , H01S5/1228 , H01S5/341 , H01S5/1225 , H01S5/124 , H01S5/1243 , H01S5/2272 , Y10S438/962
摘要： A method of fabricating a quantum wire structure includes forming a first insulating film on a surface of a substrate of a first semiconductor, the insulating film including a pattern of spaced apart mask elements having a width not exceeding 100 nm; selectively growing a layer of a second semiconductor on the surface of the substrate employing the insulating film as a growth mask, the layer including spaced apart second semiconductor elements, each second semiconductor element having a trapezoidal cross-section transverse to the surface of the substrate and including an upper surface generally parallel to the surface of the substrate and sloped surfaces oriented so that a third semiconductor does not grow on the sloped surfaces; growing a layer of a third semiconductor having a smaller band gap energy than the band gap energies of the first and second semiconductors on the upper surfaces of the second semiconductor elements and on the surface of the substrate between adjacent second semiconductor elements but not on the sloped surfaces of the second semiconductor elements, the third semiconductor forming quantum wires; and growing a layer of a fourth semiconductor having a band gap energy larger than the band gap energy of the third semiconductor on and burying the layers of the second and third semiconductors.
摘要翻译：一种制造量子线结构的方法包括在第一半导体的衬底的表面上形成第一绝缘膜，所述绝缘膜包括具有不超过100nm的宽度的间隔开的掩模元件的图案; 使用绝缘膜作为生长掩模选择性地生长在衬底的表面上的第二半导体层，该层包括间隔开的第二半导体元件，每个第二半导体元件具有横向于衬底的表面的梯形横截面;以及包括大致平行于基板的表面的上表面和倾斜表面，使得第三半导体在倾斜表面上不生长; 生长具有比第二半导体元件的上表面上的第一和第二半导体的带隙能量更小的带隙能量的第三半导体层，以及在相邻的第二半导体元件之间的衬底的表面上，而不是在倾斜的第二半导体元件的表面，第三半导体形成量子线; 以及生长具有比第三半导体的带隙能量大的带隙能量的第四半导体层，并且掩埋第二和第三半导体的层。

28. 发明授权

US4734385A Semiconductor laser element suitable for production by a MO-CVD method 失效
标题翻译：半导体激光元件适用于通过MO-CVD法制造
公开(公告)号：US4734385A
公开(公告)日：1988-03-29
申请号：US29190
申请日：1987-03-23
申请人： Yutaka Mihashi , Yutaka Nagai
发明人： Yutaka Mihashi , Yutaka Nagai
IPC分类号： H01S5/00 , H01S5/223 , H01L21/208 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2237
摘要： A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.

29. 发明授权

US4210466A Process for preparing heat sensitive semiconductor switch 失效
标题翻译：制备热敏半导体开关的工艺
公开(公告)号：US4210466A
公开(公告)日：1980-07-01
申请号：US966627
申请日：1978-12-05
申请人： Yutaka Mihashi , Josuke Nakata
发明人： Yutaka Mihashi , Josuke Nakata
IPC分类号： H01L35/00 , H01L21/265 , H01L29/66 , H01L29/74 , H01L23/56 , H01L21/263
CPC分类号： H01L29/66992 , H01L21/26513 , Y10S148/093
摘要： A process for preparing heat sensitive semiconductor switch which switches from OFF state to ON state at relatively low temperature.In a heat sensitive thyristor having PNPN four layer structure, an N type base region is exposed at one part of the surface exposed part in the P type base region to form an opening and ions of a P type impurity such as boron, aluminum and gallium are implanted from the opening to form a part having a large leakage current in a collector junction under excellent control, and to provide lower switching temperature for switching from the OFF state to the ON state with high reproducibility.
摘要翻译：一种用于制备在相对较低温度下从OFF状态切换到ON状态的热敏半导体开关的方法。在具有PNPN四层结构的热敏晶闸管中，N型基极区域露出在P型基极区域的表面露出部分的一部分上，以形成P型杂质如硼，铝和镓的离子从开口注入形成在集电极结中具有大泄漏电流的部分，并且提供较低的开关温度，用于以高再现性从OFF状态切换到ON状态。

30. 发明授权

US4151011A Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure 失效
标题翻译：通过在晶闸管结构中选择性地注入惰性离子来制造半导体热敏开关元件的工艺
公开(公告)号：US4151011A
公开(公告)日：1979-04-24
申请号：US924830
申请日：1978-07-14
申请人： Yutaka Mihashi , Josuke Nakata , Toshio Sogo , Kenichi Yamanaka
发明人： Yutaka Mihashi , Josuke Nakata , Toshio Sogo , Kenichi Yamanaka
IPC分类号： H01L35/00 , H01L21/265 , H01L29/66 , H01L29/74 , H01L35/34 , H01L23/56
CPC分类号： H01L29/66992 , H01L21/26506 , H01L29/7436
摘要： A planar pnpn thyristor structure is prepared to include an SiO.sub.2 film with a thickness of about 10,000A wholly disposed on its main face to which pn junctions are exposed. That portion of the SiO.sub.2 film underlaid with an exposed edge of a collector junction and its adjacent portion are replaced by another SiO.sub.2 film about 1,000A thick. Then argon ions Ar.sup.+ with an implantation energy of 200 KeV are implanted into the thyristor structure through both films to permit a low lifetime region including a large number of lattice defects to be formed only in its main face portion overlaid with the thin SiO.sub.2 film resulting in a semiconductor thermally sensitive switching element effecting the switchover at a sufficiently low temperature.
摘要翻译：制备平面pnpn晶闸管结构，其包括厚度大约为10,000A的SiO 2膜，其整体设置在其暴露pn结的主面上。用集电极结的暴露边缘及其相邻部分覆盖的SiO 2膜的那部分被另外的具有约1,000A厚度的SiO 2膜替代。然后通过两个膜将注入能量为200 KeV的氩离子Ar +注入到晶闸管结构中，以允许仅在其与SiO 2薄膜重叠的主面部分中形成包括大量晶格缺陷的低寿命区域，从而导致半导体热敏开关元件在足够低的温度下进行切换。

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