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1. 发明授权

US5880485A Semiconductor device including Gallium nitride layer 失效
标题翻译：包括氮化镓层的半导体器件
公开(公告)号：US5880485A
公开(公告)日：1999-03-09
申请号：US927692
申请日：1997-09-11
申请人： Diethard Marx , Zempei Kawazu , Yutaka Mihashi
发明人： Diethard Marx , Zempei Kawazu , Yutaka Mihashi
IPC分类号： H01L33/00 , H01S5/02 , H01S5/183 , H01S5/22 , H01S5/323
CPC分类号： H01S5/18308 , H01L33/007 , H01L33/0075 , H01S5/22 , H01S5/32341 , H01S2301/173 , H01S2304/12 , H01S5/0213 , H01S5/3202
摘要： A high-quality gallium nitride layer is grown on a surface of a substrate which is exposed through a dielectric mask on the substrate. The high-quality gallium nitride layer has a composition expressed by the chemical formula:Ga.sub.x Al.sub.y In.sub.z N (I)wherein 0
摘要翻译：在衬底的表面上生长高质量的氮化镓层，该衬底的表面通过衬底上的电介质掩模露出。高质量的氮化镓层具有以下化学式表示的组成：其中0

2. 发明授权

US5764673A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5764673A
公开(公告)日：1998-06-09
申请号：US937152
申请日：1997-09-25
申请人： Zempei Kawazu , Norio Hayafuji , Diethard Marx
发明人： Zempei Kawazu , Norio Hayafuji , Diethard Marx
IPC分类号： H01L33/00 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/323 , H01S3/19 , H01L31/0256
CPC分类号： H01S5/32341 , H01L33/007 , H01S2301/173 , H01S2304/04 , H01S5/0202 , H01S5/021 , H01S5/2231
摘要： A semiconductor light emitting device includes an Si substrate having opposed front and rear surfaces; an amorphous or polycrystalline first buffer layer disposed on the front surface of the Si substrate; and GaN series compound semiconductor layers successively disposed on the first buffer layer and including a light emitting region where light is produced by recombination of electrons and holes. In this light emitting device, since the Si substrate is cleavable, it is possible to produce resonator facets by cleaving. In addition, since the Si substrate is electrically conductive, a structure in which a pair of electrodes are respectively located on opposed upper and lower surfaces of the light emitting device is realized. Further, since the Si substrate is inexpensive, the light emitting device is obtained at low cost. Furthermore, since the amorphous or polycrystalline first buffer layer is disposed on the Si substrate, in the initial state of the growth of the GaN series compound semiconductor layers, plenty of growth nuclei are created, and the growth nuclei promote two-dimensional growth. As a result, high-quality GaN series compound semiconductor layers are obtained.
摘要翻译：半导体发光器件包括具有相对的前表面和后表面的Si衬底; 设置在Si衬底的前表面上的非晶或多晶第一缓冲层; 以及连续配置在第一缓冲层上的GaN系化合物半导体层，具有通过电子和空穴的复合产生光的发光区域。在该发光器件中，由于Si衬底是可切割的，所以可以通过切割产生谐振器面。此外，由于Si衬底是导电的，所以实现了一对电极分别位于发光器件的相对的上表面和下表面上的结构。此外，由于Si基板便宜，所以以低成本获得发光器件。此外，由于非晶或多晶第一缓冲层设置在Si衬底上，在GaN系化合物半导体层的生长的初始状态下，产生大量的生长核，并且生长核促进二维生长。结果，获得了高质量的GaN系化合物半导体层。

3. 发明授权

US5760426A Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13 失效
标题翻译：包括硅衬底，GaAs层和GaN层的异质外延半导体器件
公开(公告)号：US5760426A
公开(公告)日：1998-06-02
申请号：US680850
申请日：1996-07-16
申请人： Diethard Marx , Zempei Kawazu , Norio Hayafuji
发明人： Diethard Marx , Zempei Kawazu , Norio Hayafuji
IPC分类号： H01L21/203 , H01L21/205 , H01L29/201 , H01L29/267 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323 , H01L29/26
CPC分类号： H01L29/267 , H01L29/201 , H01L33/007
摘要： A semiconductor device includes an Si substrate, a stress absorbing layer of GaAs and disposed on the Si substrate, a buffer layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the stress absorbing layer, and a compound semiconductor layer having a composition of Al.sub.x Ga.sub.1-x-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and disposed on the buffer layer. Therefore, the buffer layer protects the GaAs stress absorbing layer from high temperatures during the formation of the compound semiconductor layer, whereby the stress absorbing layer is prevented from decomposition. As a result, a stress due to lattice mismatch or thermal stress between the Si substrate and the compound semiconductor layer is absorbed in the GaAs stress absorbing layer having a lowest bulk modulus, whereby a compound semiconductor layer with reduced dislocations may be grown on the buffer layer and bending of the Si substrate prevented.
摘要翻译：半导体器件包括Si衬底，GaAs的应力吸收层，并且设置在Si衬底上，具有Al x Ga 1-x-y In y N（0≤x≤1,0< / = 1）并且设置在应力吸收层上，以及具有Al x Ga 1-x-y In y N（0≤x≤1,0≤y≤1）组成的化合物半导体层并且被置于缓冲层。因此，缓冲层在形成化合物半导体层期间保护GaAs应力吸收层免受高温的影响，防止应力吸收层分解。结果，在Si衬底和化合物半导体层之间由于晶格失配或热应力引起的应力被吸收在具有最低体积弹性模量的GaAs应力吸收层中，从而可以在缓冲区上生长具有减少的位错的化合物半导体层防止了Si衬底的层和弯曲。

4. 发明授权

US5822350A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5822350A
公开(公告)日：1998-10-13
申请号：US711744
申请日：1996-09-10
申请人： Takashi Nishimura , Shoichi Karakida , Motoharu Miyashita , Diethard Marx
发明人： Takashi Nishimura , Shoichi Karakida , Motoharu Miyashita , Diethard Marx
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/2205 , H01S5/221 , H01S5/2227 , H01S5/3432
摘要： A semiconductor laser includes a ridge structure includes a cladding layer having a thermal expansion coefficient. Current blocking structures are disposed at both sides of the ridge structure and include Al.sub.x Ga.sub.1-x As first current blocking layers having an Al composition x larger than 0.7 and contacting the ridge structure. In this structure, even when the Al composition of the first current blocking layers is reduced at both sides of the ridge structure, the wavelength of light absorbed by the first current blocking layers does not exceed the wavelength of laser light produced in the active layer. Therefore, unwanted absorption of the laser light at both sides of the ridge structure is avoided, resulting in a semiconductor laser with improved laser characteristics.
摘要翻译：半导体激光器包括具有热膨胀系数的包层的脊结构。电流阻挡结构设置在脊结构的两侧，并且包括Al x Ga 1-x As具有大于0.7的Al组分x并接触脊结构的第一电流阻挡层。在该结构中，即使当第一电流阻挡层的Al组成在脊结构的两侧减小时，由第一电流阻挡层吸收的光的波长也不会超过在有源层中产生的激光的波长。因此，避免了在脊结构的两侧不必要地吸收激光，导致具有改善的激光特性的半导体激光器。

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