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21. 发明授权

US4551424A Silver halide photographic light-sensitive material 失效
标题翻译：卤化银照相感光材料
公开(公告)号：US4551424A
公开(公告)日：1985-11-05
申请号：US681757
申请日：1984-12-14
申请人： Tadashi Ikeda , Kenichi Kuwabara , Kiyohiko Yamamuro , Tadayoshi Kokubo
发明人： Tadashi Ikeda , Kenichi Kuwabara , Kiyohiko Yamamuro , Tadayoshi Kokubo
IPC分类号： G03C1/06 , G03C1/18 , G03C1/28 , G03C1/29 , G03C1/38 , G03C1/02
CPC分类号： G03C1/29 , G03C1/18 , G03C1/38
摘要： A silver halide photographic light-sensitive material is described, comprising a support and at least one silver halide emulsion layer on the support, wherein the silver halide emulsion layer contains at least one specific type of sensitizing dye, at least one of the silver halide emulsion layer and other hydrophilic colloid layers contains at least one compound of four specific types of compounds and the silver halide grains contained in the silver halide emulsion are substantially tetradecahedral grains in which the proportion of (100) faces is at least 50%; this material is superior in both sensitivity and stain resistance.
摘要翻译：描述了一种卤化银照相感光材料，其包含载体和载体上的至少一种卤化银乳剂层，其中卤化银乳剂层含有至少一种特定类型的增感染料，至少一种卤化银乳剂层和其它亲水胶体层包含至少一种四种特定类型化合物的化合物，并且卤化银乳剂中所含的卤化银颗粒基本上为十四面体颗粒，其中（100）面的比例为至少50％; 这种材料在灵敏度和耐污染性方面都是优越的。

22. 发明授权

US4286044A Silver halide photographic materials 失效
标题翻译：卤化银照相材料
公开(公告)号：US4286044A
公开(公告)日：1981-08-25
申请号：US176442
申请日：1980-08-08
申请人： Yuji Mihara , Haruo Takei , Noriyuki Inoue , Tadashi Ikeda , Kenichi Kuwabara
发明人： Yuji Mihara , Haruo Takei , Noriyuki Inoue , Tadashi Ikeda , Kenichi Kuwabara
IPC分类号： G03C1/28 , G03C1/29 , G03C1/08
CPC分类号： G03C1/29
摘要： A lith-type silver halide photographic material having high sensitivity and providing good dot quality images comprising a support having coated thereon a silver halide emulsion containing a sensitizing dye of dimethine merocyanine type represented by formula (I) and a sensitizing dye represented by formula (II): ##STR1## wherein R.sub.1 represents a sulfoalkyl group, a carboxyalkyl group, a sulfoaralkyl group, or a carboxyaralkyl group; the alkyl moiety of each alkyl group contains up to 4 carbon atoms; R.sub.2 represents a substituted or unsubstituted alkyl group or an aryl group; R.sub.3 represents --(CH.sub.2).sub.n.sbsb.1 CONH(CH.sub.2).sub.m.sbsb.1 OH or --(CH.sub.2).sub.n.sbsb.2 O(CH.sub.2).sub.m.sbsb.2 OH (wherein m.sub.1, m.sub.2, n.sub.1, and n.sub.2 each is 1 to 7; m.sub.1 +n.sub.1 and m.sub.2 +n.sub.2 each is 8 or less); W represents a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, an alkoxy group or a substituted or unsubstituted phenyl group; ##STR2## wherein Z represents a non-metallic atomic group necessary to complete a thiazolidine ring or a 4-thiazoline ring; R.sub.4 and R.sub.5 each represent a substituted or unsubstituted alkyl group, an allyl group, or a substituted or unsubstituted phenyl group; at least one of R.sub.4 and R.sub.5 being a sulfoalkyl group or a carboxyalkyl group; and R.sub.6 represents a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted phenyl group.
摘要翻译：一种具有高灵敏度并且提供良好的点质量图像的锂离子型卤化银照相材料，其包含其上涂覆有包含式（I）表示的二甲亚砜部花青型敏化染料的卤化银乳剂的支持体和由式（II）表示的增感染料）：其中R1表示磺基烷基，羧基烷基，磺基烷基或羧基烷基的（Ⅰ）化合物。每个烷基的烷基部分含有至多4个碳原子; R2表示取代或未取代的烷基或芳基; R3表示 - （CH2）n1CONH（CH2）m1OH或 - （CH2）n2O（CH2）m2OH（其中m1，m2，n1和n2各自为1至7; m1 + n1和m2 + n2分别为8或更小） ; W表示氢原子，卤素原子，取代或未取代的烷基，烷氧基或取代或未取代的苯基; （II）其中Z表示完成噻唑烷环所需的非金属原子团或4-噻唑啉环; R4和R5各自表示取代或未取代的烷基，烯丙基或取代或未取代的苯基; R4和R5中的至少一个是磺基烷基或羧基烷基; R6表示氢原子，取代或未取代的烷基或取代或未取代的苯基。

23. 发明授权

US07989330B2 Dry etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US07989330B2
公开(公告)日：2011-08-02
申请号：US12512103
申请日：2009-07-30
申请人： Takeshi Shima , Kenichi Kuwabara , Tomoyoshi Ichimaru , Kenji Imamoto
发明人： Takeshi Shima , Kenichi Kuwabara , Tomoyoshi Ichimaru , Kenji Imamoto
IPC分类号： H01L21/20
CPC分类号： H01L21/32139 , H01L21/02071 , H01L21/02115 , H01L21/02274
摘要： After etching a polysilicon film, when a protective film made of a carbon polymer is formed on a sidewall of the polysilicon film using plasma containing carbons, a metallic material as a lower film is etched using plasma containing a halogen gas under an etching condition in which volatility is improved due to the rise in a wafer temperature or the low pressure of a processing pressure, thereby preventing a side etching and unevenness of a sidewall of the polysilicon film. Further, by using the protective film made of a carbon polymer, metallic substances scattered at the time of etching the metallic material are not directly attached to the polysilicon film, but can be simply removed along with the protective film made of a carbon polymer in an asking step.
摘要翻译：在蚀刻多晶硅膜之后，当使用含有碳的等离子体在多晶硅膜的侧壁上形成由碳聚合物制成的保护膜时，在蚀刻条件下，使用含有卤素气体的等离子体蚀刻作为下部膜的金属材料，其中由于晶片温度的上升或处理压力的低压，挥发性提高，从而防止多晶硅膜的侧壁蚀刻和不均匀。此外，通过使用由碳聚合物制成的保护膜，在蚀刻金属材料时分散的金属物质不直接附着于多晶硅膜，而是可以简单地与由碳聚合物制成的保护膜一起除去问一步

24. 发明申请

US20070207618A1 Dry etching method 审中-公开
标题翻译：干蚀刻法
公开(公告)号：US20070207618A1
公开(公告)日：2007-09-06
申请号：US11505292
申请日：2006-08-17
申请人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
发明人： Satoshi Une , Masamichi Sakaguchi , Kenichi Kuwabara , Tomoyoshi Ichimaru
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28123 , H01L21/31116 , H01L21/32137
摘要： The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.
摘要翻译：本发明提供了一种用于使用等离子体蚀刻装置在半导体衬底上进行布线处理的干蚀刻方法，其中进行布线处理而不引起布线的断开或偏转。本发明提供一种使用等离子体蚀刻装置对半导体衬底进行布线处理的干式蚀刻方法，其中在使用由光致抗蚀剂15和无机膜14和13构成的掩模图案来蚀刻要蚀刻的材料12的步骤期间，在被蚀刻材料12上形成的SiN，SiON，SiO等，由含氯气体或含溴气体的卤素系气体形成的混合气体和至少一种选自使用由CF 4，CHF 3，SF 6和NF 3 3构成的含氟气体组，在要蚀刻的材料12的处理期间，基本上相同地减小掩模图案和待蚀刻材料的加工尺寸。

25. 发明授权

US5142029A Silver halide photographic material containing a compound with variable development restraining ability 失效
标题翻译：含有可变发展限制能力的化合物的银色摄影材料
公开(公告)号：US5142029A
公开(公告)日：1992-08-25
申请号：US741229
申请日：1991-08-05
申请人： Keiichi Adachi , Shingo Sato , Shigeo Hirano , Koki Nakamura , Morio Yagihara , Isamu Ito , Tadashi Ikeda , Kenichi Kuwabara
发明人： Keiichi Adachi , Shingo Sato , Shigeo Hirano , Koki Nakamura , Morio Yagihara , Isamu Ito , Tadashi Ikeda , Kenichi Kuwabara
IPC分类号： C07C51/15 , C07C65/17 , C07D249/20 , C07D257/04 , C07D403/06 , G03C1/43 , G03C7/305
CPC分类号： C07D257/04 , C07C317/00 , C07C51/15 , C07C65/17 , C07D249/20 , C07D403/06 , G03C1/43 , G03C7/305 , G03C2005/168 , G03C7/30541 , Y10S430/156 , Y10S430/158
摘要： The compounds in a preferred form are represented by general formula (I): ##STR1## wherein A and A' are each a group which can be hydrolyzed by hydrogen or alkali; X, Y and Z are each hydrogen, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryl group, a thioalkyl group or an electron-withdrawing group; PUG is a group released by a reaction with a light-exposed silver halide and/or the oxidized product of the developing agent, Time is a timing group; Time.sub.t PUG is a group released as .crclbar.TimePUG first when the oxidation-reduction moiety causes a cross reaction during the development and becomes an oxidized product, and is bonded to the benzene nucleus via a sulfur atom, a nitrogen atom or a selenium atom; and t is 0 or 1.
摘要翻译：优选形式的化合物由通式（I）表示：其中A和A'各自是可以被氢或碱水解的基团; X，Y和Z各自为氢，卤素原子，取代或未取代的烷基，取代或未取代的烷氧基，取代或未取代的芳基，硫代烷基或吸电子基团; PUG是通过与曝光的卤化银和/或显影剂的氧化产物反应释放的基团，时间是定时组; TimetPUG是当氧化还原部分在显影期间引起交叉反应而变成氧化产物时首先发布为（ - ）TimePUG的基团，并且通过硫原子，氮原子或硒原子与苯核键合; t为0或1。

26. 发明授权

US4887961A Radiant wall burner apparatus 失效
标题翻译：辐射墙燃烧器
公开(公告)号：US4887961A
公开(公告)日：1989-12-19
申请号：US167983
申请日：1988-03-14
申请人： Kenichi Kuwabara , Makoto Miyata
发明人： Kenichi Kuwabara , Makoto Miyata
IPC分类号： F23D14/12 , F23D14/22 , F23D14/84
CPC分类号： F23D14/125 , F23D14/22
摘要： A radiant wall burner which is designed to be mounted on a wall of a radiant-type furnace such as an ethylene decomposing surface has a fuel supply tube defining a fuel supply passage for a fuel which may be a gaseous fuel and provided with a fuel outlet nozzle, and an air supply tube combined with the fuel supply tube so as to provide a double-tube structure such that one of the fuel supply tube and the air supply tube constitutes an inner tube while the other constitutes an outer tube, the air supply tube defining an air supply passage for combustion air separate from the fuel supply passage and having an air outlet which opens towards the core region of the radiant-type furnace. The burner apparatus further has a plate disposed so as to oppose the air outlet of the air supply tube thereby to deflect the flow of combustion air form the air outlet in the radial directions.

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