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21. 发明授权

US06428619B1 Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer 有权
标题翻译：硅晶片及其热处理方法和热处理硅晶片
公开(公告)号：US06428619B1
公开(公告)日：2002-08-06
申请号：US09694163
申请日：2000-10-23
申请人： Hiroshi Koya , Hisashi Furuya , Yoji Suzuki , Yukio Muroi , Takaaki Shiota
发明人： Hiroshi Koya , Hisashi Furuya , Yoji Suzuki , Yukio Muroi , Takaaki Shiota
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3221 , H01L21/3225 , Y10T428/24942
摘要： A method of heat-treating a silicon wafer has the steps of: preparing a silicon wafer having an oxygen concentration of 1.2×1018 atoms/cm3 or less (old ASTM) without generating crystal originated particles(COP'S) and interstitial-type large dislocation(L/D); forming a polysilicon layer of 0.1 &mgr;m to 1.6 &mgr;m in thickness on a back of the silicon wafer by a chemical-vapor deposition at a temperature of 670° C.±30° C.; and heat-treating the silicon wafer having the polysilicon layer in an oxygen atmosphere at 1000° C.±30° C. for 2 to 5 hours and subsequently at 1130° C.±30° C. for 1 to 16 hours. In this method, the silicon wafer before the formation of the polysilicon layer thereon is the type of a wafer in which oxidation induced stacking faults(OSF's) manifest itself at a center of the wafer when the wafer is subjected to the heat-treatment. Accordingly, the resulting silicon wafer with a polysilicon layer is of OSF fee and COP free, even when the wafer is subjected to the conventional OSF-manifesting heat treatment. The wafer with the polysilicon layer exerts a uniform gettering effect between the peripheral edge and center of the silicon wafer as a result of a uniform oxygen precipitation occurred at the entire surface of the silicon wafer.
摘要翻译：硅晶片的热处理方法具有以下步骤：制备氧浓度为1.2×1018原子/ cm3以下（旧ASTM）的硅晶片，不产生晶体起始粒子（COP'S）和间隙型大位错（L / D）; 通过在670℃±30℃的温度下的化学气相沉积在硅晶片的背面上形成厚度为0.1μm至1.6μm的多晶硅层。在氧气氛中，在1000℃±30℃下，将具有多晶硅层的硅晶片热处理2〜5小时，然后在1130℃±30℃下热处理1〜16小时。在该方法中，在其上形成多晶硅层之前的硅晶片是当晶片进行热处理时，氧化诱导堆垛层错（OSF）在晶片的中心处显现的晶片的类型。因此，即使当经过常规的OSF显示热处理时，所得到的具有多晶硅层的硅晶片也具有OSF费用和COP。具有多晶硅层的晶片在硅晶片的整个表面上发生均匀的氧沉淀的结果，在硅晶片的外围边缘和中心之间施加均匀的吸气效应。

22. 发明授权

US06379460B1 Thermal shield device and crystal-pulling apparatus using the same 有权
标题翻译：热屏蔽装置和使用其的拉晶装置
公开(公告)号：US06379460B1
公开(公告)日：2002-04-30
申请号：US09644183
申请日：2000-08-23
申请人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya
发明人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya
IPC分类号： C30B3500
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A thermal shield device is equipped in a crystal-pulling apparatus for pulling a silicon monocrystal ingot from a silicon melt reserved in a quartz crucible having an outer peripheral surface encircled with a heater. The thermal shield device has a tubular part to be used for surrounding a silicon monocrystal ingot being pulled and grown in an upward direction to prevent radiant heat from the heater toward the silicon monocrystal ingot. The tubular part has a lower end positioned above a surface of the silicon melt with a predetermined spacing therebetween. A protruding part is formed on a lower portion of the tubular part and filled with a thermal-insulating member. The protruding part extends to the inside of the tubular part and has a bottom wall, a vertical wall, and a top wall. The bottom wall is shaped like a ring having an outer edge connected to a lower edge of the tubular part and extends to the proximity of an outer peripheral surface of the silicon monocrystal ingot. The vertical wall is positioned at a predetermined distance from the outer peripheral surface of the silicon monocrystal ingot and connected to an inner edge of the bottom wall. The top wall has a lower edge connected to an upper edge of the vertical wall and an upper edge attached to an inner peripheral surface of the tubular part and extends in an upward direction with a gradual increase in diameter.
摘要翻译：一种用于从保存在具有被加热器包围的外周表面的石英坩埚中保存的硅熔体拉出硅单晶锭的晶体拉制装置中装备有热屏蔽装置。该热屏蔽装置具有管状部件，用于围绕沿着向上方向拉伸和生长的硅单晶锭，以防止来自加热器的辐射热向硅单晶锭。管状部分具有位于硅熔体表面上方的预定间隔的下端。突出部形成在筒状部的下部并填充有绝热构件。突出部分延伸到管状部分的内部，并具有底壁，垂直壁和顶壁。底壁的形状为具有连接到管状部分的下边缘的外边缘并且延伸到硅单晶锭的外周表面附近的环。垂直壁位于与硅单晶锭的外周表面预定的距离处并连接到底壁的内边缘。顶壁具有连接到垂直壁的上边缘的下边缘，并且附接到管状部分的内周表面的上边缘并且沿着直径逐渐增加的向上方向延伸。

23. 发明授权

US5897706A Methods for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein 失效
标题翻译：用于坩埚附着到单晶拉制装置的支撑基座的方法和其中使用的支撑基座组装装置和支撑基座
公开(公告)号：US5897706A
公开(公告)日：1999-04-27
申请号：US834293
申请日：1997-04-15
申请人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
发明人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
IPC分类号： C30B15/00 , C30B15/10 , C30B15/30 , C30B29/06 , H01L21/208
CPC分类号： C30B15/30 , C30B15/10 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： An improvement in the safety, ease and speed with which the operation of attaching a crucible 1 to a support base 10 of a single crystal pulling apparatus can be completed is provided. With the method of attaching the crucible 1 to the support base 10, the support base 10 is divided into a support base bottom portion 11 and a support base drum portion 12 which is fitted to the bottom portion 11, and the crucible 1 is mounted on the support base bottom portion 11. The support base 10 is then assembled by fitting the support base drum portion 12 to the support base bottom portion 11.
摘要翻译：提供了可以完成将坩埚1附接到单晶拉制装置的支撑基座10的操作的安全性，容易性和速度的改进。通过将坩埚1安装到支撑基座10上的方法，支撑基座10被分成支撑底部底部11和安装到底部11的支撑基部鼓部分12，坩埚1安装在支撑底部底部11.然后通过将支撑基底鼓部分12装配到支撑基部底部部分11来组装支撑基座10。

24. 发明授权

US5873938A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5873938A
公开(公告)日：1999-02-23
申请号：US774183
申请日：1996-12-26
申请人： Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.
摘要翻译：其中将半导体熔体储存在外坩埚中的单晶拉制装置和用作分隔体的圆柱形内坩埚安装在外坩埚内部，从而形成双坩埚，并将半导体单晶从半导体在内坩埚内熔化。内坩埚包含形成于双坩埚形成时的连通部，用于使半导体熔体流入内坩埚，并且连通部包括用于去除粘附到连通部的气泡的布置。

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