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1. 发明授权

US5871581A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5871581A
公开(公告)日：1999-02-16
申请号：US781841
申请日：1997-01-10
申请人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , C30B29/42 , H01L21/208 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/10 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.
摘要翻译：一种单晶拉制装置，包括：气密性容器，用于将密封容器内的半导体熔体储存在包括在下边缘连接的外坩埚和内坩埚的气密容器内的双坩埚，以及源材料供给装置，在外坩埚和内坩埚之间的位置处的半导体熔体，其特征在于，在所述外坩埚和所述内坩埚之间的所述半导体熔融区域的内部设置限流构件，以限制所述半导体熔体的流动。

2. 发明授权

US5840115A Single crystal growth method 失效
标题翻译：单晶生长法
公开(公告)号：US5840115A
公开(公告)日：1998-11-24
申请号：US781818
申请日：1997-01-10
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , C30B29/42 , H01L21/208 , C30B15/04
CPC分类号： C30B15/12 , C30B15/02
摘要： A method of growing a single crystal of semiconductor using a CZ growth technique, having a step (0
摘要翻译：使用CZ生长技术生长半导体单晶的方法，其具有在连续供给源材料以维持恒定量的半导体熔体的同时拉动单晶半导体的步骤（0

3. 发明授权

US5873938A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5873938A
公开(公告)日：1999-02-23
申请号：US774183
申请日：1996-12-26
申请人： Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.
摘要翻译：其中将半导体熔体储存在外坩埚中的单晶拉制装置和用作分隔体的圆柱形内坩埚安装在外坩埚内部，从而形成双坩埚，并将半导体单晶从半导体在内坩埚内熔化。内坩埚包含形成于双坩埚形成时的连通部，用于使半导体熔体流入内坩埚，并且连通部包括用于去除粘附到连通部的气泡的布置。

4. 发明授权

US5895527A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5895527A
公开(公告)日：1999-04-20
申请号：US791777
申请日：1997-01-29
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/12 , Y10T117/10
摘要： The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.
摘要翻译：本发明涉及一种单晶拉制装置，包括：位于室（气密容器）2内的用于储存半导体熔体21的外坩埚11和安装在外坩埚11内部以形成双坩埚的圆柱形分隔体的内坩埚30，并且其中单晶半导体26被从存储在内坩埚30内部的半导体熔融物21拉出。由此，内坩埚30由石英制成，包括内层A，外层C和中间层B，内层A和外层C，中间层B由具有比构成内坩埚30的内层A和外层C的石英更大的气泡含量的石英制成。

5. 发明授权

US5779792A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5779792A
公开(公告)日：1998-07-14
申请号：US781843
申请日：1997-01-10
申请人： Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/12 , C30B15/02 , C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/02 , C30B15/305 , Y10T117/1056
摘要： The present invention provides an improved single crystal pulling apparatus for pulling a single crystal semiconductor such as silicon or gallium arsenide. The apparatus of the present invention comprises a gas tight container, a crucible which is disposed inside the container, a heater, and a pair of coils to apply a cusp magnetic field in the semiconductor melt. The crucible is separated into two regions by a cylindrical partition body, and an outside region is used to supply source material and to melt the source material and an inside region is used for pulling up the single crystal. The inside and outside regions are communicated with the communication passage provided at the bottom of the partition body. Electrical currents in opposing directions are applied to a pair of coils for generating in the melt a cusp magnetic field which includes a vertical portion and a horizontal portion relative to the crucible. By positioning the vertical portion of the cusp magnetic field at the position of the communication passage and the horizontal portion below the semiconductor melt, the flow rate of the melt passing through the communication passage is reduced and the convection within the melt is suppressed. Consequently, high quality semiconductor single crystals can be obtained.
摘要翻译：本发明提供一种用于拉取诸如硅或砷化镓的单晶半导体的改进的单晶拉制装置。本发明的装置包括气密容器，设置在容器内的坩埚，加热器和一对在半导体熔体中施加尖点磁场的线圈。坩埚通过圆柱形分隔体分成两个区域，并且使用外部区域来供应源材料并熔化源材料，并且使用内部区域来拉出单晶。内部和外部区域与设置在分隔体底部的连通通道连通。相反方向的电流被施加到一对线圈，用于在熔体中产生包括相对于坩埚的垂直部分和水平部分的尖点磁场。通过将尖点磁场的垂直部分定位在连通通道的位置和半导体熔体下方的水平部分，通过连通通道的熔体的流速减小，并且熔体内的对流被抑制。因此，可以获得高质量的半导体单晶。

6. 发明授权

US5891245A Single crystal pulling method and apparatus for its implementation 失效
标题翻译：单晶拉拔方法及其实施方法
公开(公告)号：US5891245A
公开(公告)日：1999-04-06
申请号：US781842
申请日：1997-01-10
申请人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264
摘要翻译：采用单晶拉制法; 气密容器，用于将半导体熔体储存在气密容器内的双坩埚，其包括相互连接的外坩埚和内坩埚，以及从气密容器的上部悬挂的源材料供给管，颗粒状或粉末状的原料可以从其下端开口加入外坩埚内的半导体熔体，其中源材料与朝向封闭容器流动的惰性气体一起注入源材料供应管中，其特征在于所述在惰性气体的流量N（1 / min×cm 2）在0.0048P + 0.0264

7. 发明授权

US5858087A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5858087A
公开(公告)日：1999-01-12
申请号：US774184
申请日：1996-12-26
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/1052
摘要： The principal construction of a single crystal pulling apparatus involves a chamber (gas tight chamber) inside of which is a double crucible 3 for storing a semiconductor melt 21, comprising an outer crucible 11 and an inner crucible 12 communicated with each other, and a source material supply tube 5 suspended from an upper portion of the chamber, and positioned so that granular source material 8 can be introduced from a lower end opening 5a thereof into the semiconductor melt 21 between the outer crucible 11 and the inner crucible 12. An incline portion 13 is provided at a lower end of the source material supply tube 5 on the inner crucible 12 side, for introducing source material 8 discharging from the lower end opening 5a to the semiconductor melt 21 in the vicinity of the side wall of the outer crucible 11. The entry point of the source material 8 is as far as possible from the inner crucible 12, and close to the outer wall of the outer crucible 11, and hence the added source material 8 is melted rapidly by heat from a heater surrounding the outer crucible 11, and any gas bubbles generated as a result of the introduction of the source material 8, are unlikely infuse into the inner crucible 12.
摘要翻译：单晶拉制装置的主要结构涉及一个室（气密室），其内部是用于存储半导体熔体21的双坩埚3，其包括彼此连通的外坩埚11和内坩埚12，源材料供给管5从室的上部悬挂，并且定位成使得颗粒状原料8可以从其下端开口5a引入到外坩埚11和内坩埚12之间的半导体熔体21中。倾斜部分在内坩埚12侧的原料供给管5的下端部设置有用于将从下端开口5a排出的原料8引导到外坩埚11的侧壁附近的半导体熔融体21 源材料8的入口点尽可能远离内坩埚12，并且靠近外坩埚11的外壁，因此添加的源配合 rial 8通过来自围绕外坩埚11的加热器的热量迅速熔化，并且由于引入源材料8而产生的任何气泡不太可能注入内坩埚12中。

8. 发明申请

US20090044926A1 Silicon casting apparatus 审中-公开
标题翻译：硅铸造设备
公开(公告)号：US20090044926A1
公开(公告)日：2009-02-19
申请号：US12222743
申请日：2008-08-15
申请人： Michio Kida , Kenichi Sasatani , Mitsuo Yoshihara , Tomohiro Onizuka
发明人： Michio Kida , Kenichi Sasatani , Mitsuo Yoshihara , Tomohiro Onizuka
IPC分类号： B22D11/041
CPC分类号： C30B11/001 , C30B11/002 , C30B11/003 , C30B29/06
摘要： In a silicon casting apparatus according to the present invention, silicon melted by electromagnetic induction heating is continuously solidified using an electrically-conductive bottomless cold crucible and an induction coil surrounding the cold crucible. The cold crucible is made of copper alloy containing beryllium (desirably containing beryllium of 0.1 to 5 mass %), whereby the generation of electric-discharge flaw can be effectively prevented in performing electromagnetic casting. The use of the silicon casting apparatus according to the present invention can greatly extend a crucible life to reduce facility costs. Additionally, a solar-cell silicon ingot can be produced with high quality.
摘要翻译：在根据本发明的硅铸造装置中，通过电磁感应加热熔化的硅使用导电底底冷坩埚和围绕冷坩埚的感应线圈连续固化。冷坩埚由含有铍（期望含有0.1〜5质量％的铍）的铜合金构成，能够有效地防止在进行电磁铸造时产生放电瑕疵。根据本发明的硅铸造装置的使用可以极大地延长坩埚寿命以减少设备成本。另外，可以以高品质生产太阳能电池硅锭。

9. 发明授权

US5306474A Apparatus for growing single crystals 失效
标题翻译：用于生长单晶的装置
公开(公告)号：US5306474A
公开(公告)日：1994-04-26
申请号：US921896
申请日：1992-07-29
申请人： Michio Kida , Yoshiaki Arai , Naoki Ono , Kensho Sahira
发明人： Michio Kida , Yoshiaki Arai , Naoki Ono , Kensho Sahira
IPC分类号： C30B15/02 , C30B15/12
CPC分类号： C30B15/12 , Y10S117/90
摘要： An apparatus for growing a single crystal is disclosed which includes a double crucible assembly. The double crucible assembly has an outer crucible and an inner crucible disposed in the outer crucible. A support member is provided for supporting the inner crucible, and the support member is formed of an inorganic oxide non-reactive with silicon oxide. The upper end portion of the inner crucible may be formed of the same inorganic oxide. Alumina or mullite is suitable as the inorganic oxide. With the above construction, silicon single crystals obtained by the crystal growing apparatus will be free of contamination by carbon or heavy metals, and will exhibit excellent quality.
摘要翻译：公开了一种用于生长单晶的装置，其包括双坩埚组件。双坩埚组件具有外坩埚和设置在外坩埚中的内坩埚。提供用于支撑内坩埚的支撑构件，并且支撑构件由与氧化硅不反应的无机氧化物形成。内坩埚的上端部可以由相同的无机氧化物形成。氧化铝或莫来石适合作为无机氧化物。通过上述结构，通过晶体生长装置获得的硅单晶将不受碳或重金属的污染，并且将表现出优良的品质。

10. 发明授权

US5196086A Monocrystal rod pulled from a melt 失效
标题翻译：单晶棒从熔体中拉出
公开(公告)号：US5196086A
公开(公告)日：1993-03-23
申请号：US821819
申请日：1992-01-17
申请人： Michio Kida , Kensho Sahira , Akikuni Nozoe
发明人： Michio Kida , Kensho Sahira , Akikuni Nozoe
IPC分类号： C30B15/00 , C30B15/30
CPC分类号： C30B15/30 , C30B15/00 , C30B29/60 , Y10S117/911
摘要： A monocrystal rod utilized for producing the semiconductor device or solar cell includes a neck section, a main rod section and a shoulder section. The neck section is smaller in diameter than a seed crystal. The main rod section is formed integrally with the neck section and is larger in diameter than the neck section. The shoulder section is tapered for linking the neck section to the main rod section. The main rod section has a stopper section at the top portion of the main rod section, and the stopper section is larger than the main rod section.Also, an apparatus for preparing the monocrystal rod has a safety member for supporting upward the stopper section of the falling monocrystal rod.Further, a method of preparing the monocrystal rod includes the steps as follows. The seed crystal is pulled out from a melt in a crucible while rotating it. The speed of pulling the seed crystal is at first increased to grow the neck section whose diameter is smaller than the seed crystal, and then is gradually decreased to grow the shoulder section. Subsequently, the pulling speed is increased again so as to prevent further increase in diameter to grow the stopper section at the lower end of the shoulder section or at the top portion of the main rod section, and then is decreased again to grow the main rod section whose diameter is equal to a required diameter.
摘要翻译：用于制造半导体器件或太阳能电池的单晶棒包括颈部，主棒部和肩部。颈部的直径小于晶种。主杆部与颈部一体形成，直径大于颈部。肩部是锥形的，用于将颈部部分连接到主杆部分。主杆部在主杆部的顶部具有止动部，止动部大于主杆部。此外，用于制备单晶棒的装置具有用于向上支撑下降的单晶棒的止动部分的安全构件。此外，制备单晶棒的方法包括以下步骤。在将坩埚旋转的同时，从坩埚中的熔融物中取出晶种。首先增加拉晶种的速度，使其直径比晶种小的颈部生长，然后逐渐减小以使肩部生长。随后，再次提高牵引速度，以防止直径的进一步增加，使得在主体部分的下端处或主杆部分的顶部处的止动部分生长，然后再次减小以使主杆其直径等于所需直径。

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