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21. 发明授权

US06818879B2 Amplifier circuit for optical disk drive 有权
标题翻译：用于光盘驱动器的放大器电路
公开(公告)号：US06818879B2
公开(公告)日：2004-11-16
申请号：US10183367
申请日：2002-06-28
申请人： Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F308
CPC分类号： H03F3/08 , H03F3/45085 , H03F2203/45466 , H03G3/3084
摘要： An operational amplifier including a pair of differential input transistors is provided with a feedback resistor switching circuit and a variable current source. When a loaded optical disk is a DVD-ROM, the feedback resistor switching circuit reduces a gain of the operational amplifier and the variable current source selects a large current (of, for example, 1 mA) as a common bias current supplied to the differential input transistors. When the loaded optical disk is a DVD-RAM with low reflectance and low recording/reproducing speed, the feedback resistor switching circuit enhances the gain of the operational amplifier and the variable current source selects a small current (of, for example, 0.5 mA) as the common bias current.
摘要翻译：包括一对差分输入晶体管的运算放大器设置有反馈电阻器切换电路和可变电流源。当加载的光盘是DVD-ROM时，反馈电阻器开关电路降低运算放大器的增益，并且可变电流源选择大电流（例如，1mA）作为提供给差分器的公共偏置电流输入晶体管。当装载的光盘是具有低反射率和低记录/再现速度的DVD-RAM时，反馈电阻器切换电路增强了运算放大器的增益，并且可变电流源选择小电流（例如，0.5mA）作为常见的偏置电流。

22. 发明申请

US20110199673A1 INTEGRATED OPTICAL DEVICE AND OPTICAL PICKUP DEVICE USING THE SAME 审中-公开
标题翻译：集成光学器件和使用该光学器件的光学拾取器件
公开(公告)号：US20110199673A1
公开(公告)日：2011-08-18
申请号：US13052842
申请日：2011-03-21
申请人： Shingo OKAURA , Masaki Taniguchi , Hideo Fukuda
发明人： Shingo OKAURA , Masaki Taniguchi , Hideo Fukuda
IPC分类号： H01S5/00
CPC分类号： H01S5/0683 , G11B7/1263 , G11B7/13 , H01S5/4087
摘要： An integrated optical device includes a plurality of semiconductor lasers which emit different wavelengths of laser light, a comparator circuit which compares voltages across terminals of the respective plurality of semiconductor lasers, and outputs a signal depending on the comparison result, a light-receiving element which outputs a photocurrent depending on the amounts of laser light emitted from the plurality of semiconductor lasers, and a current mirror circuit which switches between amplification and attenuation with respect to the photocurrent output from the light-receiving element based on the signal output from the comparator circuit, and outputs a monitor signal.
摘要翻译：集成光学器件包括发射不同波长的激光的多个半导体激光器，比较电路，其对相应的多个半导体激光器的端子之间的电压进行比较，并根据比较结果输出信号;光接收元件，输出根据从多个半导体激光器发射的激光的量的光电流，以及基于从比较器电路输出的信号相对于从光接收元件的光电流输出而在放大和衰减之间切换的电流镜电路，并输出监视信号。

23. 发明授权

US07888765B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US07888765B2
公开(公告)日：2011-02-15
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/102
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

24. 发明授权

US07663200B2 Integrated circuit device packaging structure and packaging method 失效
标题翻译：集成电路器件封装结构及封装方法
公开(公告)号：US07663200B2
公开(公告)日：2010-02-16
申请号：US11073726
申请日：2005-03-08
申请人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
发明人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
IPC分类号： H01L21/02
CPC分类号： H01L31/0203 , G11B7/13 , H01L25/167 , H01L31/02325 , H01L2224/16 , H01L2224/48227 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.
摘要翻译：提供了适用于接收短波长激光的集成电路器件的封装结构。引线安装基板被放置在具有光检测部分的集成电路装置的光接收表面的一侧。引线通过电极与集成电路器件电连接。集成电路器件和衬底用封装部分封装。基板在光检测部分上方的位置具有开口。

25. 发明授权

US07661964B2 Connecting parts and multilayer wiring board 失效
标题翻译：连接件和多层接线板
公开(公告)号：US07661964B2
公开(公告)日：2010-02-16
申请号：US11882028
申请日：2007-07-30
申请人： Kazuaki Suzuki , Masaki Taniguchi
发明人： Kazuaki Suzuki , Masaki Taniguchi
IPC分类号： H01R12/00
CPC分类号： H05K3/368 , H01R12/52 , H01R13/2414 , H05K1/186 , H05K3/325 , H05K3/4611 , H05K2201/0314 , H05K2201/0367 , H05K2201/10636 , H05K2201/10977 , Y02P70/611
摘要： A connecting part for ensuring a secure connection includes first connecting terminals that are arranged on one face of a supporting member and second connecting terminals that are arranged on the back face of the supporting member. The supporting member may have an elastic body. The connecting terminals are interconnected by conductive films which are formed on the face of the supporting member. Connecting parts are arranged between circuit boards on which electronic parts are mounted, and the circuit boards are mutually fixed in the state in which the connecting parts are compressed. The first and second connecting terminals are pushed against lands on the circuit boards by restoring force of the connecting parts, and then the circuit boards are electrically interconnected.
摘要翻译：用于确保安全连接的连接部分包括布置在支撑构件的一个面上的第一连接端子和布置在支撑构件的背面上的第二连接端子。支撑构件可以具有弹性体。连接端子由形成在支撑构件的表面上的导电膜互连。连接部件布置在其上安装电子部件的电路板之间，并且电路板在连接部件被压缩的状态下相互固定。第一和第二连接端子通过连接部件的恢复力而被推靠在电路板上的平台上，然后电路板电互连。

26. 发明授权

US07211829B2 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US07211829B2
公开(公告)日：2007-05-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/15 , H01L31/113
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

27. 发明申请

US20060202761A1 Amplifier unit and optical disc drive 失效
标题翻译：放大器单元和光盘驱动器
公开(公告)号：US20060202761A1
公开(公告)日：2006-09-14
申请号：US11430241
申请日：2006-05-09
申请人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F3/45
CPC分类号： H03F3/3432 , H03F3/08 , H03F2200/78
摘要： An amplifier unit is provided, with which the need for manufacturing a photoelectric conversion IC in Bi-CMOS process is eliminated, and relatively low process cost of the photoelectric conversion IC is achieved. The input section of a buffer (the base of a transistor Q5) is connected with a plurality of patterns of phase compensation circuits each including a resistor and a capacitor connected in series. A bipolar transistor (Q6) is interposed between a positive power supply line and a capacitor (C2) forming a capacitance of the phase compensation circuit. By switching on/off the bipolar transistor (Q6), the capacitance value and resistance value of the phase compensation circuit are switched. Since the bipolar transistor (Q6) is interposed between the capacitor (C2) and the positive power supply line, base current (Isw) acting as a switch signal does not affect the amplifier unit.
摘要翻译：提供放大器单元，消除了在Bi-CMOS工艺中制造光电转换IC的需要，并且实现了光电转换IC的相对低的处理成本。缓冲器（晶体管Q 5的基极）的输入部分与多个相位补偿电路相连，每个相位补偿电路均包括串联连接的电阻器和电容器。在正电源线和形成相位补偿电路的电容的电容器（C 2）之间插入双极晶体管（Q6）。通过接通/关断双极晶体管（Q 6），相位补偿电路的电容值和电阻值被切换。由于双极晶体管（Q 6）插在电容器（C 2）和正电源线之间，所以作为开关信号的基极电流（Isw）不影响放大器单元。

28. 发明申请

US20050280015A1 Optical semiconductor device and manufacturing method for same 失效
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20050280015A1
公开(公告)日：2005-12-22
申请号：US11149258
申请日：2005-06-10
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
IPC分类号： H01L21/00 , H01L27/146 , H01L29/22 , H01L31/0216
CPC分类号： H01L31/02165 , H01L27/14685
摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
摘要翻译：形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜在防反射膜上以及在微反射镜上方的周边周围的膜。

29. 发明授权

US5554844A Passband-adjustable photo-detector for inverse photoemission spectroscopy 失效
标题翻译：用于逆光电子能谱的通带可调光电检测器
公开(公告)号：US5554844A
公开(公告)日：1996-09-10
申请号：US404554
申请日：1995-03-15
申请人： Hirofumi Namatame , Masaki Taniguchi
发明人： Hirofumi Namatame , Masaki Taniguchi
IPC分类号： G01N23/227 , G01J1/02 , G01J1/04 , G01N21/62 , G01N23/225 , G01N21/00 , G02F1/01 , H01L31/10
CPC分类号： G01N23/2251 , H01J2237/2445 , H01J2237/24485 , H01J2237/2516
摘要： A passband-adjustable photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged, so as to effect photo-detection, wherein said photo-detector comprises a photo-electron multiplier, a LiF monocrystal window and a CaF.sub.2 monocrystal window individually deposited with a KCl thin film in the front of a photo-electron multiplier in the photo-detector, wherein said windows means are provided for arbitrarily setting the temperature from the vicinity of liquid nitrogen temperature to the order of 150.degree. C., a photo-electron multiplier having a first dinode deposited a KCl thin film on a surface thereof said photo-electron multiplier, and an output of the photo electron multiplier is connected with a pulse counter circuit through an amplifier, so as to measure anyone selected from the group consisting of light absorption property, window transmissibility and sensitivity as a bandpass filter.
摘要翻译：一种用于逆光电子发射光谱的通带可调光检测器，其中来自电子枪的电子束被施加到样品上并且从其反射的光会聚，以便进行光检测，其中所述光检测器包括照片电子倍增器，在光电检测器中的光电子倍增器前面分别沉积有KCl薄膜的LiF单晶窗口和CaF 2单晶窗口，其中所述窗口装置用于任意设置温度从液氮温度为150℃左右，具有第一个二极管的光电子倍增器在其表面上沉积有KCl薄膜，所述光电子倍增器，光电子倍增器的输出与脉冲计数器电路通过放大器，以便测量从由光吸收特性，窗口传输性和灵敏度组成的组中选出的任何一个带通过滤器

30. 发明授权

US07605049B2 Optical semiconductor device and manufacturing method for same 失效
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07605049B2
公开(公告)日：2009-10-20
申请号：US11149258
申请日：2005-06-10
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
IPC分类号： H01L21/76 , H01L21/311 , G02B6/36
CPC分类号： H01L31/02165 , H01L27/14685
摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
摘要翻译：形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜在防反射膜上以及在微反射镜上方的周边周围的膜。

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