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1. 发明申请

US20050189546A1 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US20050189546A1
公开(公告)日：2005-09-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/144 , H01L27/15 , H01L31/0288 , H01L31/103
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

2. 发明授权

US07211829B2 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US07211829B2
公开(公告)日：2007-05-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/15 , H01L31/113
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

3. 发明申请

US20090032896A1 OPTICAL SEMICONDUCTOR DEVICE 失效
标题翻译：光学半导体器件
公开(公告)号：US20090032896A1
公开(公告)日：2009-02-05
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/11
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

4. 发明授权

US07888765B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US07888765B2
公开(公告)日：2011-02-15
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/102
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

5. 发明申请

US20050280015A1 Optical semiconductor device and manufacturing method for same 失效
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20050280015A1
公开(公告)日：2005-12-22
申请号：US11149258
申请日：2005-06-10
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
IPC分类号： H01L21/00 , H01L27/146 , H01L29/22 , H01L31/0216
CPC分类号： H01L31/02165 , H01L27/14685
摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
摘要翻译：形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜在防反射膜上以及在微反射镜上方的周边周围的膜。

6. 发明授权

US07605049B2 Optical semiconductor device and manufacturing method for same 失效
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07605049B2
公开(公告)日：2009-10-20
申请号：US11149258
申请日：2005-06-10
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
IPC分类号： H01L21/76 , H01L21/311 , G02B6/36
CPC分类号： H01L31/02165 , H01L27/14685
摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
摘要翻译：形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜在防反射膜上以及在微反射镜上方的周边周围的膜。

7. 发明授权

US5552595A Narrow band high sensitivity photodetector for inverse photoemission spectroscopy 失效
标题翻译：窄带高灵敏度光电探测器用于逆光电子能谱
公开(公告)号：US5552595A
公开(公告)日：1996-09-03
申请号：US404553
申请日：1995-03-15
申请人： Hirofumi Namatame , Masaki Taniguchi
发明人： Hirofumi Namatame , Masaki Taniguchi
IPC分类号： G01N23/227 , G01J1/02 , G01J1/04 , G01J1/42 , G01N21/62 , H01J43/10 , G01N21/00 , G02F1/01 , H01L31/10
CPC分类号： G01J1/429 , H01J43/10
摘要： A narrow band high sensitivity photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged into a photo-electron detector, so as to effect photo-electron detection in a photo-electron multiplier, wherein said photo-electron detector comprises a CaF.sub.2 monocrystal window provided with a KCl thin film in the front of said photo-electron detector, a first dynode deposited with a KCl thin film on a surface thereof, wherein an output of the photo-electron multiplier is applied with a pulse counter circuit through an amplifier, so as to measure light absorption properties, window transmissibility and detection sensitivity as a band pass filter.
摘要翻译：一种用于逆光电子发射光谱的窄带高灵敏度光检测器，其中将来自电子枪的电子束施加到样品上，并将从其反射的光会聚在光电子检测器中，以便实现光电子检测光电子倍增器，其中所述光电子检测器包括在所述光电子检测器的前面设置有KCl薄膜的CaF 2单晶窗口，在其表面上沉积有KCl薄膜的第一倍增电极，其中输出通过放大器施加脉冲计数器电路，以便测量作为带通滤波器的光吸收特性，窗口传输率和检测灵敏度。

8. 发明授权

US5340976A Bandpass photon detector for inverse photoemission spectroscopy 失效
标题翻译：用于逆光子发射光谱的带通光子检测器
公开(公告)号：US5340976A
公开(公告)日：1994-08-23
申请号：US33327
申请日：1993-03-18
申请人： Masaki Taniguchi , Toshiaki Ohta
发明人： Masaki Taniguchi , Toshiaki Ohta
IPC分类号： G01N23/227 , G01J1/42 , G01N21/62 , G01T1/28 , H01J43/08 , G01N23/22
CPC分类号： G01T1/28 , G01J1/429
摘要： A bandpass photon detector for inverse photoemission spectroscopy comprises a sample chamber and an analyzer chamber connected to a vacuum exhaust system, respectively; a photon detector connected to the analyzer chamber; the sample chamber and the analyzer chamber are switchably connected through a gate valve and provided with a sample transfer system for transferring a sample held at a center axial line of the sample chamber to a center portion of the analyzer chamber, the analyzer chamber is provided with an electron gun opposed to a sample positioned at a center where the sample is transferred and a photomultiplier comprising a low cut filter consisting of Cu-BeO at the opposite side of the electron gun, wherein a potassium chloride is deposited in a thickness of 500-1000 .ANG. on a first diode of said photomultiplier, thereby high inverse photoemission spectroscopy can be measured so as to analysis and estimation of semiconductors and magnetic material.
摘要翻译：用于逆光电子发射光谱的带通光子检测器分别包括连接到真空排气系统的样品室和分析器室; 连接到分析器室的光子检测器; 样品室和分析器室通过闸阀可切换地连接并设置有用于将保持在样品室的中心轴线处的样品转移到分析器室的中心部分的样品转移系统，分析器室设置有与位于样品转移中心的样品相对的电子枪和包含由电子枪相反侧的Cu-BeO构成的低切滤光片的光电倍增管，其中以500nm的厚度沉积氯化钾，可以测量所述光电倍增管的第一个二极管上的1000个ANGSTROM，从而可以测量高反射光电子能谱，以便分析和估计半导体和磁性材料。

9. 发明授权

US07476839B2 Amplifier circuit for optical disk drive 有权
标题翻译：用于光盘驱动器的放大器电路
公开(公告)号：US07476839B2
公开(公告)日：2009-01-13
申请号：US10983737
申请日：2004-11-09
申请人： Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F3/06 , H03F3/45 , H03G3/00 , G11B11/00
CPC分类号： H03F3/08 , H03F3/45085 , H03F2203/45466 , H03G3/3084
摘要： An operational amplifier including a pair of differential input transistors is provided with a feedback resistor switching circuit and a variable current source. When a loaded optical disk is a DVD-ROM, the feedback resistor switching circuit reduces a gain of the operational amplifier and the variable current source selects a large current (of, for example, 1 mA) as a common bias current supplied to the differential input transistors. When the loaded optical disk is a DVD-RAM with low reflectance and low recording/reproducing speed, the feedback resistor switching circuit enhances the gain of the operational amplifier and the variable current source selects a small current (of, for example, 0.5 mA) as the common bias current.
摘要翻译：包括一对差分输入晶体管的运算放大器设置有反馈电阻器切换电路和可变电流源。当加载的光盘是DVD-ROM时，反馈电阻器开关电路降低运算放大器的增益，并且可变电流源选择大电流（例如，1mA）作为提供给差分器的公共偏置电流输入晶体管。当装载的光盘是具有低反射率和低记录/再现速度的DVD-RAM时，反馈电阻器切换电路增强了运算放大器的增益，并且可变电流源选择小电流（例如，0.5mA）作为常见的偏置电流。

10. 发明申请

US20080179501A1 Output impedance varying circuit 有权
公开(公告)号：US20080179501A1
公开(公告)日：2008-07-31
申请号：US12076788
申请日：2008-03-24
申请人： Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： G01J1/44
CPC分类号： H03F3/3069 , H03F1/08 , H03F1/56 , H03F3/08 , H03F3/087 , H03F3/343
摘要： A photo detector IC (PDIC) is connected with a flexible printed circuit board (FPC). A signal converted into a voltage through light-to-voltage conversion in the PDIC is connected with the drain of a field effect transistor (FET), while the source of the FET is connected to an output terminal. A signal from the output terminal is input into a signal processing board of the main body via the FPC serving as an equivalent circuit composed of a coil and a capacitor. The gate of the FET is connected with a variable voltage source. Peaking occurs due to inductor components and capacitance components of the FPC. However, by application of voltage to the variable voltage source, the gate voltage value of the FET is adjusted to be an optimal value, whereby the peaking is suppressed by the on-resistance of the FET.

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