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1. 发明申请

US20050189546A1 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US20050189546A1
公开(公告)日：2005-09-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/144 , H01L27/15 , H01L31/0288 , H01L31/103
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

2. 发明授权

US07211829B2 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US07211829B2
公开(公告)日：2007-05-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/15 , H01L31/113
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

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