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    • 21. 发明授权
    • Non-volatile latch circuit and a driving method thereof
    • 非易失性锁存电路及其驱动方法
    • US06845032B2
    • 2005-01-18
    • US10785031
    • 2004-02-25
    • Kenji ToyodaTakashi OhtsukaKiyoshi Morimoto
    • Kenji ToyodaTakashi OhtsukaKiyoshi Morimoto
    • G11C11/22H01L21/8246H01L27/105H03K3/356H03K17/693H03K19/0948H03K19/185
    • G11C11/22H03K17/693
    • Non-volatile latch circuit 10 of the present invention comprises ferroelectric capacitor 1 provided with a first electrode 1a, second electrode 1b, and ferroelectric film 1c that lies between these electrodes; reset terminal Tre that is connected to first electrode 1a and a CMOS inverter element 2 that is connected to second electrode 1b of ferroelectric capacitor 1; voltage switching terminal Tpl that applies a voltage to second electrode 1b; switching element 5 that is connected between second electrode 1b and second input terminal Tpl and switches a voltage applied to second electrode 1b; and set terminal Tse that applies a voltage for switching on or off switching element 5, wherein the voltage generated in second electrode 1b caused by polarization retained by ferroelectric film 1c is higher than the threshold voltage Vtn of NMISFET 4 of CMOS inverter element 2.
    • 本发明的非易失性锁存电路10包括设置有位于这些电极之间的第一电极1a,第二电极1b和铁电体膜1c的铁电电容器1; 连接到第一电极1a的复位端子Tre和连接到铁电电容器1的第二电极1b的CMOS反相器元件2; 向第二电极1b施加电压的电压切换端子Tpl; 开关元件5,其连接在第二电极1b和第二输入端子Tpl之间,并切换施加到第二电极1b的电压; 并设置施加用于接通或关断开关元件5的电压的端子Tse,其中由铁电体膜1c保持的极化所引起的第二电极1b中产生的电压高于CMOS反相器元件2的NMISFET 4的阈值电压Vtn。
    • 22. 发明授权
    • Potential generating circuit, potential generating device and semiconductor device using the same, and driving method thereof
    • 电位发生电路,电位产生装置及使用其的半导体装置及其驱动方法
    • US06809953B2
    • 2004-10-26
    • US10440277
    • 2003-05-16
    • Kenji ToyodaMichihito UedaKiyoshi MorimotoKiyoyuki MoritaToru IwataJun Kajiwara
    • Kenji ToyodaMichihito UedaKiyoshi MorimotoKiyoyuki MoritaToru IwataJun Kajiwara
    • G11C1122
    • H02M3/07H02M3/073
    • A potential generating circuit comprises a capacitor (4); a ferroelectric capacitor (6) connected in series to the capacitor (4); an output terminal (11); a capacitor (10) for grounding the output terminal (11); a switch (9) for connecting a connecting node (5) between the two capacitors (4, 6) to the output terminal (11); and a switch (1) for connecting the connecting node (5) to the ground; wherein during a first period, with the switches (1) and (9) placed in the OFF state, a terminal (3) is provided with a positive potential and a terminal (7) is grounded; wherein during a second period following the first period, the terminal (3) is grounded and the switch (9) is placed in the ON state; wherein during a third period following the second period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is provided with a positive potential; wherein during a fourth period following the third period, the terminal (7) is grounded; and wherein the first through fourth periods are repeated.
    • 电位发生电路包括电容器(4); 与电容器(4)串联连接的铁电电容器(6)。 输出端子(11); 用于使输出端子(11)接地的电容器(10); 用于将两个电容器(4,6)之间的连接节点(5)连接到输出端子(11)的开关(9); 和用于将连接节点(5)连接到地面的开关(1); 其中在第一时段期间,当开关(1)和(9)处于断开状态时,端子(3)被提供有正电位并且端子(7)接地; 其中在所述第一周期之后的第二时段期间,所述端子(3)接地,并且所述开关(9)处于接通状态; 其中在所述第二时段之后的第三时段期间,所述开关(9)处于断开状态,所述开关(1)处于接通状态,并且所述端子(7)被提供有正电位; 其中在所述第三周期之后的第四周期期间,所述终端(7)接地; 并且其中重复第一至第四周期。
    • 23. 发明授权
    • Powder material spraying device
    • 粉料喷涂装置
    • US06776361B1
    • 2004-08-17
    • US10019936
    • 2002-04-24
    • Yasushi WatanabeKimiaki HayakawaKiyoshi Morimoto
    • Yasushi WatanabeKimiaki HayakawaKiyoshi Morimoto
    • A02C1504
    • B30B15/0011B05B7/1404B05B7/144
    • A powdered material spraying device comprising a quantitative spraying device provided for a material discharge port of the powdered material storage hopper via a material feed valve, a cover being provided for the material feed port of the powdered material storage hopper. The spraying device includes a cylindrical body connected with the material discharge port of the powdered material storage hopper, an elastic membrane with a penetrating aperture provided so as to form a bottom of the cylindrical body at its lower opening end, and a dispersion chamber connected under the lower opening end of the cylindrical body via the elastic membrane. The dispersion chamber has a pulsating vibration air supply port for supplying a positive pulsating vibration air to the dispersion chamber and a discharge port. A bypass pipe is connected between the cylindrical body and the dispersion chamber and the powdered material is sprayed from a tip end of a conduit connected with the discharge port of the dispersion chamber.
    • 一种粉末喷涂装置,其特征在于,包括:定量喷射装置,其经由供料阀设置在所述粉料储存料斗的排料口上,为所述粉料储存料斗的料料供给口设置盖。 喷射装置包括与粉料储存料斗的材料排出口连接的圆柱体,具有穿孔的弹性膜,其设置成在其下开口端形成圆柱体的底部,并且分隔室连接在 圆柱体的下开口端经由弹性膜。 分散室具有用于向分散室和排出口供给正脉动振动空气的脉动振动空气供给口。 旁通管连接在圆柱体和分散室之间,并且粉末材料从与分散室的排出口连接的导管的末端喷射。
    • 24. 发明授权
    • Light sensitive silver halide photographic emulsion and silver halide photographic light-sensitive material containing the emulsion
    • 含有乳液的感光卤化银照相乳剂和卤化银照相感光材料
    • US06479230B1
    • 2002-11-12
    • US09513579
    • 2000-02-25
    • Kiyoshi Morimoto
    • Kiyoshi Morimoto
    • G03C1005
    • G03C1/005G03C1/0051G03C1/061G03C1/07G03C1/10G03C2001/0056G03C2001/03535G03C2200/03
    • A silver halide photographic light-sensitive emulsion containing, at a ratio of 50% or more of the total projected area of silver halide grains, tabular silver halide grains each having faces as parallel major faces and an aspect ratio of 2 or more and including 10 or more dislocation lines per grain, and containing at least one compound represented by formula (1) or (2) below: wherein A represents an atomic group required to form a nitrogen-containing hetero ring, each of B and E independently represents a divalent group containing at least one divalent group selected from the group consisting of alkylene, arylene, —O—, —S—, —SO2—, —CO2—, and —N(R5)-, wherein R5 represents a hydrogen atom, an alkyl group, or an aryl group, provided that each of —O—, —S—, —SO2—, —CO2—, and —N(R5)- is adjacent to and connects with alkylene or arylene, and that B does not bond to the nitrogen atom which forms a hetero ring and which bonds to the carbon atom by a double bond, each of R1 and R2 independently represents an alkyl group or an aralkyl group, each of R3 and R4 represents a substituent, and X represents an anion group, provided that no X exists in the case of intramolecular salt.
    • 一种卤化银摄影感光乳剂,其以卤化银颗粒的总投影面积的50%或更多的比例,各自具有平面主面的平面状卤化银颗粒和2倍以上的纵横比包括10 或更多的位错线,并且含有至少一种由下式(1)或(2)表示的化合物:其中A表示形成含氮杂环所需的原子团,B和E各自独立地表示二价 含有至少一个选自亚烷基,亚芳基,-O - , - S - , - SO 2 - , - CO 2 - 和-N(R 5) - 的二价基团,其中R 5表示氢原子,烷基 基团或芳基,条件是-O - , - S - , - SO 2 - , - CO 2 - 和-N(R 5) - 中的每一个与亚烷基或亚芳基相邻并连接,并且B不键合 与形成杂环的氮原子并且通过双键与碳原子键合,R1和R2各自独立地表示 y表示烷基或芳烷基,R3和R4各自表示取代基,X表示阴离子基,条件是在分子内盐中不存在X。
    • 25. 发明授权
    • Compound and silver halide photographic material containing the same
    • 含有相同的化合物和卤化银照相材料
    • US06365335B1
    • 2002-04-02
    • US09373584
    • 1999-08-13
    • Takanori HiokiKiyoshi Morimoto
    • Takanori HiokiKiyoshi Morimoto
    • G03C112
    • G03C1/14G03C1/0051G03C1/127G03C1/16G03C1/18G03C1/22G03C1/26G03C2001/0055
    • A Silver halide photographic material high in sensitivity and decreased in residual color is disclosed, which comprises at least one compound represented by the following formula (I): wherein Z1 represents an oxygen atom, a sulfur atom, a selenium atom, a tellurium atom, a carbon atom or a nitrogen atom; Q represents a group necessary for forming a methine dye; M1 represents a charge equilibrium counter ion; m1 represents the number necessary for neutralizing a charge of the molecule; Vp represents a group having a log P value lower than that of Cl; q1 represents 1, 2, 3 or 4; and R1 is represented by following: R1=(La)k1CONHSO2R11, R1=(Lb)k2SO2NHCOR12, R1=(Lc)k3CONHCOR13, R1=(Ld)k4SO2NHSO2R14 wherein R11, R12, R13 and R14 each represents an alkyl group, an aryl group, a heterocyclic group, an alkoxyl group, an aryloxy group, a heterocyclyloxy group or an amino group; La, Lb, Lc and Ld each represents a methylene group; and k1, k2, k3 a nd k4 each represents an integer of 1 to 18.
    • 披露了高灵敏度和残留颜色降低的卤化银照相材料,其包含至少一种由下式(I)表示的化合物:其中Z1表示氧原子,硫原子,硒原子,碲原子, 碳原子或氮原子; Q表示形成次甲基染料所需的基团; M1表示电荷平衡反离子; m1表示中和分子的电荷所需的数目; Vp表示log P值低于Cl的基团; q1表示1,2,3或4; 并且R1表示如下:R1 =(La)k1CONHSO2R11,R1 =(Lb)k2SO2NHCOR12,R1 =(Lc)k3CONHCOR13,R1 =(Ld)k4SO2NHSO2R14其中R11,R12,R13和R14各自表示烷基, 杂环基,烷氧基,芳氧基,杂环氧基或氨基; La,Lb,Lc和Ld各自表示亚甲基; k1,k2,k3,...,k4分别表示1〜18的整数。
    • 27. 发明授权
    • Rear projection screen incorporating a prism
    • 装有棱镜的背投屏幕
    • US06292295B1
    • 2001-09-18
    • US09210796
    • 1998-12-15
    • Hajime YamashitaKiyoshi MorimotoYoshihiro KumagaiHideki Kobayashi
    • Hajime YamashitaKiyoshi MorimotoYoshihiro KumagaiHideki Kobayashi
    • G03B2156
    • G03B21/625
    • A rear projection screen is used for a projection optical system where projected lights perpendicularly enter the screen from the rear face of the screen includes a Fresnel lens sheet incorporating a prism and a lenticular lens sheet that horizontally disperses lights emitted from the Fresnel lens sheet incorporating a prism. The Fresnel lens sheet incorporating a prism has a linear prism, which acts as a linear Fresnel lens for converging image lights in the screen height direction, at the projection light source side, and has a circular Fresnel lens, which acts to converge image lights in the direction of the screen center, at the observer side. According to the rear projection screen, the peak screen gain is increased and the peripheral luminance ratio is improved without degrading light utilization efficiency.
    • 背投屏幕用于投影光学系统,其中投影光从屏幕的后表面垂直地进入屏幕包括:菲涅尔透镜片,其包括棱镜和双凸透镜片,其将水平分散从包含一菲涅尔透镜片的菲涅尔透镜片发出的光 棱镜 包含棱镜的菲涅尔透镜片具有直线棱镜,其作为用于在投影光源侧会聚图像光在屏幕高度方向上的线性菲涅尔透镜,并且具有圆形菲涅尔透镜,其用于将图像光聚焦 屏幕中心的方向,在观察者侧。 根据背投屏幕,增加峰值屏幕增益,并且在不降低光利用效率的情况下提高外围亮度比。
    • 28. 发明授权
    • Resonance tunnel device
    • 共振隧道装置
    • US6015978A
    • 2000-01-18
    • US175505
    • 1998-10-20
    • Koichiro YukiKiyoyuki MoritaKiyoshi MorimotoYoshihiko Hirai
    • Koichiro YukiKiyoyuki MoritaKiyoshi MorimotoYoshihiko Hirai
    • H01L21/306H01L21/329H01L29/88H01L29/06
    • H01L29/6609H01L21/30608H01L29/882Y10S438/962
    • The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etching the semiconductor layer using the mask pattern to form a semiconductor microstructure extending in a first direction parallel to a surface of the substrate, wherein, in the step of selectively etching the semiconductor layer, an etching rate in a second direction vertical to the first direction and parallel to the surface of the substrate is substantially zero with respect to an etching rate in the first direction, and a width of the semiconductor microstructure is substantially equal to a shortest distance between the first opening and the second opening in the second direction.
    • 形成本发明的半导体微结构的方法包括以下步骤:在具有半导体层作为其上部的衬底上形成具有第一开口和第二开口的掩模图案; 以及使用所述掩模图案选择性地蚀刻所述半导体层,以形成在平行于所述基板的表面的第一方向上延伸的半导体微结构,其中,在选择性地蚀刻所述半导体层的步骤中,沿垂直于所述基板的第二方向的蚀刻速率 第一方向并平行于衬底的表面相对于第一方向上的蚀刻速率基本上为零,并且半导体微结构的宽度基本上等于第一开口和第二开口在第二方向上的最短距离 。