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21. 发明申请

US20080203708A1 Interior Material and Laser Beam Processing Method for the Same 有权
标题翻译：内部材料和激光束加工方法
公开(公告)号：US20080203708A1
公开(公告)日：2008-08-28
申请号：US11885875
申请日：2006-03-06
申请人： Tokuji Okumura , Kazushiro Wakabayashi , Mitsutaka Igaue , Hisashi Masuda , Yutaka Ebato , Masahiko Nakayama
发明人： Tokuji Okumura , Kazushiro Wakabayashi , Mitsutaka Igaue , Hisashi Masuda , Yutaka Ebato , Masahiko Nakayama
IPC分类号： B60R21/215 , B23K26/02
CPC分类号： B23K26/0622 , B23K26/04 , B23K26/046 , B23K26/08 , B23K26/382 , B23K2103/42 , B23K2103/50 , B60R21/2165
摘要： A front face distance is obtained by measuring the position of a front face of an instrument panel held by an end effecter of a robot. An error on an optical axis, at the position of the front face is obtained based on the front face distance. Based on the error, the position of the instrument panel is adjusted so that a focal point of a laser meets the position at a predetermined depth defined with the front face as the standard. A back face of the instrument panel is irradiated with a laser to form a fine hole of a fragile section.
摘要翻译：通过测量由机器人的末端执行器保持的仪表板的正面的位置来获得正面距离。基于正面距离获得在前表面的位置处的光轴上的误差。基于该误差，调整仪器面板的位置，使得激光的焦点在以正面限定的预定深度为标准的位置处。用激光照射仪表板的背面以形成脆弱部分的细孔。

22. 发明申请

US20070013015A1 Magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20070013015A1
公开(公告)日：2007-01-18
申请号：US11378358
申请日：2006-03-20
申请人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
发明人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译：磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。参考层设置在第一表面上并具有固定的磁化方向。磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。第一突出部从第一长边突出的位置从中心向第一短边移动。第二突出部从第二长边突出的位置从中心向第二短边移动。

23. 发明申请

US20060198184A1 Magnetic memory device and write method of magnetic memory device 有权
标题翻译：磁存储器件和磁存储器件的写入方法
公开(公告)号：US20060198184A1
公开(公告)日：2006-09-07
申请号：US11255111
申请日：2005-10-21
申请人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
发明人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.
摘要翻译：一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件，具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层，第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。

24. 发明申请

US20060139818A1 Magnetic random access memory 审中-公开
标题翻译：磁性随机存取存储器
公开(公告)号：US20060139818A1
公开(公告)日：2006-06-29
申请号：US11072269
申请日：2005-03-07
申请人： Tsuneo Inaba , Masahiko Nakayama
发明人： Tsuneo Inaba , Masahiko Nakayama
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11C11/16 , H01L43/08
摘要： An MTJ element of a magnetic random access memory according to an example of the present invention comprises a first ferromagnetic layer whose magnetization direction is fixed, and a second ferromagnetic layer whose magnetization direction changes in accordance with an applied magnetic field. The second ferromagnetic layer comprises a main body having a long-axis direction, and a jut jutting in a direction different from that of a long axis from the main body.
摘要翻译：根据本发明的实例的磁性随机存取存储器的MTJ元件包括其磁化方向固定的第一铁磁层和其磁化方向根据施加的磁场而变化的第二铁磁层。第二铁磁层包括具有长轴方向的主体和沿与主轴不同的长轴方向的突出部。

25. 发明授权

US6018510A Phase change recording medium for allowing a tracking servo control based on a differential phase detection tracking method 失效
标题翻译：用于允许基于差分相位检测跟踪方法的跟踪伺服控制的相变记录介质
公开(公告)号：US6018510A
公开(公告)日：2000-01-25
申请号：US56630
申请日：1998-04-08
申请人： Michiharu Abe , Michiaki Shinotsuka , Masahiko Nakayama
发明人： Michiharu Abe , Michiaki Shinotsuka , Masahiko Nakayama
IPC分类号： G11B7/0045 , G11B7/005 , G11B7/0055 , G11B7/007 , G11B7/09 , G11B7/24 , G11B7/24079 , G11B7/26
CPC分类号： G11B7/00718 , G11B7/0901 , G11B7/0906 , G11B7/0938 , G11B7/24 , G11B7/24079 , G11B7/00454 , G11B7/005 , G11B7/00557 , G11B7/007
摘要： An erasable phase change recording medium includes a transparent substrate, a recording layer of a phase change material provided on the substrate, and a protection layer provided to protect the recording layer on the substrate. Tracks are formed with alternate grooves and lands on the substrate of the recording medium and data is recorded to at least one of the grooves and the lands. The recording medium is configured to have a track pitch between 0.6 .mu.m and 0.8 .mu.m and a groove depth between 0.11.L and 0.18.L where L is a wavelength of a laser beam.
摘要翻译：可擦除相变记录介质包括透明基板，设置在基板上的相变材料的记录层以及用于保护基板上记录层的保护层。轨道在记录介质的基板上形成有交替的凹槽和平台，并且数据被记录到至少一个凹槽和平台上。记录介质被配置为具有在0.6μm和0.8μm之间的轨道间距以及在0.11.L和0.18L之间的槽深度，其中L是激光束的波长。

26. 发明授权

US5812520A Optical disk unit, control method thereof, optical information recording medium and recording-regenerating method using this optical information recording medium 失效
公开(公告)号：US5812520A
公开(公告)日：1998-09-22
申请号：US939677
申请日：1997-09-29
申请人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
发明人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
IPC分类号： G11B7/007 , G11B7/013 , G11B7/085 , G11B7/09 , G11B7/26 , G11B3/70 , G11B7/00
CPC分类号： G11B7/08505 , G11B7/00718 , G11B7/00745 , G11B7/24085 , G11B7/261 , G11B7/0901 , G11B7/0938 , G11B7/0943
摘要： In a control method of an optical disk unit, it is judged by performing a tentative tracking operation of an optical pickup in a constant region of an optical disk whether a tracking position of the optical pickup is located in a land or groove portion. After a correct tracking control condition is judged, an access operation according to command information is executed. The optical disk unit has a two-divisional light receiving element for receiving diffracted light caused by a pregroove and a prepit of the optical disk, and a differentiator for generating a difference signal between signals of this light receiving element. The optical disk unit further has an adder for generating a sum signal of the signals of the light receiving element, and a tracking signal selector for selecting the difference or sum signal when the tracking operation is performed in a pregroove or prepit region, respectively. An optical information recording medium and a method for recording and regenerating information by using this optical information recording medium are also shown.

27. 发明授权

US5515473A Airtight seal structure of low melting point glass to be used in optical fiber guiding portion of optical device and method of airtight seal using low melting point glass 失效
标题翻译：用于光学装置的光纤引导部分的低熔点玻璃的密封结构和使用低熔点玻璃的气密密封方法
公开(公告)号：US5515473A
公开(公告)日：1996-05-07
申请号：US188160
申请日：1994-01-28
申请人： Kenji Yamauchi , Masahiko Nakayama
发明人： Kenji Yamauchi , Masahiko Nakayama
IPC分类号： G02B6/00 , G02B6/255 , G02B6/42 , G02B6/44
CPC分类号： G02B6/4248 , G02B6/2551 , G02B6/4428
摘要： An airtight sealing method for a leading portion of an optical fiber, which provides high airtight sealing effect and is suitable for mass-production, is provided. The airtight seal structure of a leading portion of an optical fiber according to the present invention comprises an optical fiber and a metal pipe having a through-hole for receiving the optical fiber and adapted to connect an inner portion of the leading portion to an outer portion of the leading portion. A pair of glass pipes each having a through-hole receives the optical fiber and adapted to be inserted into the metal pipe. A low melting point glass material is disposed between the glass pipes in the metal pipe and seals the inner and outer portions of the leading portion by filling a space between an inside of the metal pipe and the optical fiber when heated. Particularly, the melting point of the glass pipes is higher than the melting point of the low melting point glass material so that they are sealed by the low melting point glass material and fixedly bonded to an inner wall of the metal pipe when the low melting point glass material becomes molten state by heating.
摘要翻译：提供了一种用于光纤前端部分的气密密封方法，其提供高气密密封效果并适合批量生产。根据本发明的光纤的引导部分的气密密封结构包括光纤和金属管，其具有用于接收光纤的通孔，并且适于将引导部分的内部部分连接到外部部分的领先部分。一对具有通孔的玻璃管容纳光纤并适于插入到金属管中。在金属管中的玻璃管之间设置低熔点玻璃材料，通过在加热时填充金属管内部和光纤之间的空间来密封引导部的内部和外部。特别地，玻璃管的熔点高于低熔点玻璃材料的熔点，使得它们被低熔点玻璃材料密封并固定在金属管的内壁上，当低熔点玻璃材料通过加热变成熔融状态。

28. 发明授权

US08958239B2 Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit 有权
标题翻译：磁存储元件，磁存储器件，自旋晶体管和集成电路
公开(公告)号：US08958239B2
公开(公告)日：2015-02-17
申请号：US13532981
申请日：2012-06-26
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/00 , G11C11/16 , H01L29/66 , H01L43/08 , H01L27/22 , H01L29/06
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/224 , H01L29/0657 , H01L29/66984 , H01L43/08
摘要： One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：一个实施例提供了一种磁存储元件，包括：其磁化可变的第一铁磁层; 第二铁磁层，其具有分裂成价带的第一带和导带，以及至少从价带至导带连续的第二带; 以及设置在第一铁磁层和第二铁磁层之间的非磁性层。

29. 发明授权

US08878321B2 Magnetoresistive element and producing method thereof 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08878321B2
公开(公告)日：2014-11-04
申请号：US13618410
申请日：2012-09-14
申请人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
发明人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： H01L29/82 , H01L21/8246 , H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
摘要翻译：根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。界面层的透过率比体层高，平面尺寸比体层大。

30. 发明授权

US08665639B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08665639B2
公开(公告)日：2014-03-04
申请号：US13407039
申请日：2012-02-28
申请人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
发明人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/228 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.
摘要翻译：根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。第一磁性层具有第一和第二铁磁材料的叠层结构。第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。第一铁磁材料的膜厚比第二铁磁材料薄。

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