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1. 发明申请

US20120168838A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120168838A1
公开(公告)日：2012-07-05
申请号：US13419947
申请日：2012-03-14
申请人： Takao MARUKAME , Mizue Ishikawa , Tomoaki Inokuchi , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Takao MARUKAME , Mizue Ishikawa , Tomoaki Inokuchi , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/66984 , H01L21/823814 , H01L21/84 , H01L21/845 , H01L29/41766 , H01L29/456 , H01L29/49 , H01L29/66075
摘要： A semiconductor device according to an embodiment includes: a semiconductor layer; source and drain regions in the semiconductor layer; a magnetic metal semiconductor compound film on each of the source and drain regions, the magnetic metal semiconductor compound film including the same semiconductor as a semiconductor of the semiconductor layer and a magnetic metal; a gate insulating film on the semiconductor layer between the source region and the drain region; a gate electrode on the gate insulating film; a gate sidewall formed at a side portion of the gate electrode, the gate sidewall being made of an insulating material; a film stack formed on the magnetic metal semiconductor compound film on each of the source and drain regions, the film stack including a magnetic layer; and an oxide layer formed on the gate sidewall, the oxide layer containing the same element as an element in the film stack.
摘要翻译：根据实施例的半导体器件包括：半导体层; 半导体层中的源极和漏极区域; 在源极和漏极区域中的每一个上的磁性金属半导体化合物膜，包括与半导体层的半导体相同的半导体的磁性金属半导体化合物膜和磁性金属; 源极区域和漏极区域之间的半导体层上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 栅极侧壁，其形成在所述栅电极的侧部，所述栅极侧壁由绝缘材料制成; 在所述源极和漏极区域中的每一个上形成在所述磁性金属半导体化合物膜上的膜堆叠，所述膜堆叠包括磁性层; 以及形成在栅极侧壁上的氧化物层，所述氧化物层包含与膜堆叠中的元件相同的元件。

2. 发明授权

US08026561B2 Spin MOSFET and reconfigurable logic circuit 有权
标题翻译：旋转MOSFET和可重构逻辑电路
公开(公告)号：US08026561B2
公开(公告)日：2011-09-27
申请号：US12725561
申请日：2010-03-17
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa
IPC分类号： H01L21/02
CPC分类号： H01L43/02 , B01D53/1493 , B01D53/62 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1695 , H01L28/00 , H01L29/0843 , H01L29/0895 , H01L29/66984 , H01L43/10
摘要： A spin MOSFET includes: a first ferromagnetic layer provided on an upper face of a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on an upper face of the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower face and the upper face; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on an upper face of the second ferromagnetic layer; a third ferromagnetic layer provided on an upper face of the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween.
摘要翻译：自旋MOSFET包括：设置在半导体衬底的上表面上并且具有与膜平面垂直的固定磁化方向的第一铁磁层; 设置在所述第一铁磁层的上表面上的半导体层，包括与所述第一铁磁层的上表面相对的下表面，与所述下表面相对的上表面，以及与所述下表面和所述上表面不同的侧面 ; 第二铁磁层，设置在所述半导体层的上表面上，并且具有与膜平面垂直的可变磁化方向; 设置在所述第二铁磁层的上表面上的第一隧道势垒; 设置在所述第一隧道屏障的上表面上的第三铁磁层; 设置在所述半导体层的侧面上的栅极绝缘膜; 以及设置在半导体层的侧面上的栅电极，其间插入有栅极绝缘膜。

3. 发明授权

US07956395B2 Spin transistor and magnetic memory 有权
标题翻译：旋转晶体管和磁存储器
公开(公告)号：US07956395B2
公开(公告)日：2011-06-07
申请号：US12200169
申请日：2008-08-28
申请人： Tomoaki Inokuchi , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： H01L27/115
CPC分类号： H01L29/66984 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3286
摘要： A spin transistor includes a first ferromagnetic layer provided on a substrate and having an invariable magnetization direction, a second ferromagnetic layer provided on the substrate apart from the first ferromagnetic layer in a first direction, and having a variable magnetization direction, a plurality of projecting semiconductor layers provided on the substrate to extend in the first direction, and sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a plurality of channel regions respectively provided in the projecting semiconductor layers, and a gate electrode provided on the channel regions.
摘要翻译：自旋晶体管包括设置在基板上并具有不变磁化方向的第一铁磁层，在第一方向上设置在与第一铁磁层隔开的基板上并具有可变磁化方向的第二铁磁层，多个突出半导体设置在基板上以在第一方向上延伸并夹在第一铁磁层和第二铁磁层之间的层，分别设置在突出半导体层中的多个沟道区和设置在沟道区上的栅电极。

4. 发明申请

US20100072529A1 STACK HAVING HEUSLER ALLOY, MAGNETORESISTIVE ELEMENT AND SPIN TRANSISTOR USING THE STACK, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有合金的堆叠，使用堆叠的磁体元件和旋转晶体管及其制造方法
公开(公告)号：US20100072529A1
公开(公告)日：2010-03-25
申请号：US12565303
申请日：2009-09-23
申请人： Takao MARUKAME , Mizue ISHIKAWA , Tomoaki INOKUCHI , Hideyuki SUGIYAMA , Yoshiaki SAITO
发明人： Takao MARUKAME , Mizue ISHIKAWA , Tomoaki INOKUCHI , Hideyuki SUGIYAMA , Yoshiaki SAITO
IPC分类号： H01L29/82 , B05D3/02 , B32B15/04
CPC分类号： H01L29/66984 , H01F10/1936 , H01F10/265 , H01L27/228 , H01L43/10 , H01L43/12 , Y10T428/12611
摘要： A stack includes a crystalline MgO layer, crystalline Heusler alloy layer, and amorphous Heusler alloy layer. The crystalline Heusler alloy layer is provided on the MgO layer. The amorphous Heusler alloy layer is provided on the crystalline Heusler alloy layer.
摘要翻译：堆叠包括结晶MgO层，结晶Heusler合金层和非晶Heusler合金层。结晶Heusler合金层设置在MgO层上。非晶Heusler合金层设置在结晶Heusler合金层上。

5. 发明申请

US20090243653A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：半导体集成电路
公开(公告)号：US20090243653A1
公开(公告)日：2009-10-01
申请号：US12408953
申请日：2009-03-23
申请人： Tomoaki INOKUCHI , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Tomoaki INOKUCHI , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： H03K19/173 , G11C11/14
CPC分类号： G11C14/0081 , G11C11/161 , G11C11/1675 , G11C11/1693 , G11C13/0004 , G11C13/0007 , G11C13/02 , G11C2213/31 , G11C2213/32 , H03K19/0944 , H03K19/18
摘要： A semiconductor integrated circuit includes an n-channel spin FET including one of a magnetic tunnel junction and a magneto-semiconductor junction, the n-channel spin FET including a gate terminal to receive an input signal, a source terminal to receive a first power supply potential, and a drain terminal connected to an output terminal, a p-channel FET including a gate terminal to receive a clock signal, a source terminal to receive a second power supply potential, and a drain terminal connected to the output terminal, a subsequent circuit connected to the output terminal, and a control circuit which turns on the p-channel FET to start charging the output terminal, then turns off the p-channel FET to end the charging, and supplies the input signal to the gate terminal of the n-channel spin FET.
摘要翻译：半导体集成电路包括包括磁性隧道结和磁半导体结之一的n沟道自旋FET，所述n沟道自旋FET包括用于接收输入信号的栅极端子，用于接收第一电源的源极端子电位和连接到输出端的漏极端子，包括用于接收时钟信号的栅极端子的p沟道FET，用于接收第二电源电位的源极端子和连接到输出端子的漏极端子，后续连接到输出端子的电路，以及控制电路，其导通p沟道FET以开始对输出端子充电，然后关闭p沟道FET以结束充电，并将输入信号提供给 n沟道自旋FET。

6. 发明申请

US20090180215A1 TUNNELING MAGNETORESISTIVE EFFECT ELEMENT AND SPIN MOS FIELD-EFFECT TRANSISTOR 有权
标题翻译：隧道磁场效应元件和旋转MOS场效应晶体管
公开(公告)号：US20090180215A1
公开(公告)日：2009-07-16
申请号：US12342383
申请日：2008-12-23
申请人： Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , G11C11/1659 , H01F10/1936 , H01F10/3254 , H01F10/3295 , H01L27/228 , H01L29/66984 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element includes a first ferromagnetic layer, Cr layer, Heusler alloy layer, barrier layer, and second ferromagnetic layer. The first ferromagnetic layer has the body-centered cubic lattice structure. The Cr layer is formed on the first ferromagnetic layer and has the body-centered cubic lattice structure. The Heusler alloy layer is formed on the Cr layer. The barrier layer is formed on the Heusler alloy layer. The second ferromagnetic layer is formed on the barrier layer.
摘要翻译：磁阻效应元件包括第一铁磁层，Cr层，Heusler合金层，阻挡层和第二铁磁层。第一铁磁层具有体心立方晶格结构。 Cr层形成在第一铁磁层上并具有体心立方晶格结构。 Heusler合金层形成在Cr层上。阻挡层形成在Heusler合金层上。第二铁磁层形成在阻挡层上。

7. 发明授权

US08618590B2 Spin transistor, integrated circuit, and magnetic memory 有权
标题翻译：旋转晶体管，集成电路和磁存储器
公开(公告)号：US08618590B2
公开(公告)日：2013-12-31
申请号：US12561475
申请日：2009-09-17
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： H01L21/02 , G11C11/14
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： A spin transistor includes a first ferromagnetic layer, a second ferromagnetic layer, a semiconductor layer between the first and second ferromagnetic layers, and a gate electrode on or above a surface of the semiconductor layer, the surface being between the first and second ferromagnetic layers. The first ferromagnetic layer comprises a ferromagnet which has a first minority spin band located at a high energy side and a second minority spin band located at a low energy side, and has a Fermi level in an area of the high energy side higher than a middle of a gap between the first and second minority spin bands.
摘要翻译：自旋晶体管包括第一铁磁层，第二铁磁层，第一和第二铁磁层之间的半导体层，以及在半导体层的表面上或上方的栅电极，该表面位于第一和第二铁磁层之间。第一铁磁层包括具有位于高能侧的第一少数自旋带和位于低能侧的第二少数自旋带的铁磁体，并且在高能量侧的区域中的费米能级高于中间第一和第二少数自旋带之间的间隙。

8. 发明授权

US08487359B2 Spin MOSFET and reconfigurable logic circuit using the spin MOSFET 有权
标题翻译：使用自旋MOSFET的Spin MOSFET和可重构逻辑电路
公开(公告)号：US08487359B2
公开(公告)日：2013-07-16
申请号：US12486999
申请日：2009-06-18
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa , Takao Marukame
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa , Takao Marukame
IPC分类号： H01L27/108
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/3272 , H01F10/3286
摘要： It is made possible to provide a spin MOSFET that can minimize the increase in production costs and can perform both spin injection writing and reading. A spin MOSFET includes: a substrate that has a semiconductor region of a first conductivity type; first and second ferromagnetic stacked films that are formed at a distance from each other on the semiconductor region, and each have the same stacked structure comprising a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer stacked in this order, the second ferromagnetic stacked film having a film-plane area different from that of the first ferromagnetic stacked film; a gate insulating film that is formed on a portion of the semiconductor region, the portion being located between the first ferromagnetic stacked film and the second ferromagnetic stacked film; and a gate that is formed on the gate insulating film.
摘要翻译：可以提供一种可以使生产成本增加最小化的自旋MOSFET，并且可以执行自动注入写入和读取两种操作。自旋MOSFET包括：具有第一导电类型的半导体区域的衬底; 第一和第二铁磁层叠膜，其形成在半导体区域上彼此间隔一定距离处，并且各自具有包括依次层叠的第一铁磁层，非磁性层和第二铁磁层的相同层叠结构，第二铁磁体具有与第一铁磁性层叠膜不同的膜面积的层叠膜; 形成在所述半导体区域的一部分上的所述栅绝缘膜，所述栅极绝缘膜位于所述第一铁磁层叠膜和所述第二铁磁性堆叠膜之间; 以及形成在栅极绝缘膜上的栅极。

9. 发明授权

US08335059B2 Tunneling magnetoresistive effect element and spin MOS field-effect 有权
标题翻译：隧道磁阻效应元件和自旋MOS场效应晶体管
公开(公告)号：US08335059B2
公开(公告)日：2012-12-18
申请号：US13533198
申请日：2012-06-26
申请人： Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： G11B5/39 , H01L21/02 , H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , G11C11/1659 , H01F10/1936 , H01F10/3254 , H01F10/3295 , H01L27/228 , H01L29/66984 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element includes a first ferromagnetic layer, Cr layer, Heusler alloy layer, barrier layer, and second ferromagnetic layer. The first ferromagnetic layer has the body-centered cubic lattice structure. The Cr layer is formed on the first ferromagnetic layer and has the body-centered cubic lattice structure. The Heusler alloy layer is formed on the Cr layer. The barrier layer is formed on the Heusler alloy layer. The second ferromagnetic layer is formed on the barrier layer.
摘要翻译：磁阻效应元件包括第一铁磁层，Cr层，Heusler合金层，阻挡层和第二铁磁层。第一铁磁层具有体心立方晶格结构。 Cr层形成在第一铁磁层上并具有体心立方晶格结构。 Heusler合金层形成在Cr层上。阻挡层形成在Heusler合金层上。第二铁磁层形成在阻挡层上。

10. 发明授权

US08330196B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08330196B2
公开(公告)日：2012-12-11
申请号：US13419947
申请日：2012-03-14
申请人： Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/66984 , H01L21/823814 , H01L21/84 , H01L21/845 , H01L29/41766 , H01L29/456 , H01L29/49 , H01L29/66075
摘要： A semiconductor device according to an embodiment includes: a semiconductor layer; source and drain regions in the semiconductor layer; a magnetic metal semiconductor compound film on each of the source and drain regions, the magnetic metal semiconductor compound film including the same semiconductor as a semiconductor of the semiconductor layer and a magnetic metal; a gate insulating film on the semiconductor layer between the source region and the drain region; a gate electrode on the gate insulating film; a gate sidewall formed at a side portion of the gate electrode, the gate sidewall being made of an insulating material; a film stack formed on the magnetic metal semiconductor compound film on each of the source and drain regions, the film stack including a magnetic layer; and an oxide layer formed on the gate sidewall, the oxide layer containing the same element as an element in the film stack.
摘要翻译：根据实施例的半导体器件包括：半导体层; 半导体层中的源极和漏极区域; 在源极和漏极区域中的每一个上的磁性金属半导体化合物膜，包括与半导体层的半导体相同的半导体的磁性金属半导体化合物膜和磁性金属; 源极区域和漏极区域之间的半导体层上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 栅极侧壁，其形成在所述栅电极的侧部，所述栅极侧壁由绝缘材料制成; 在所述源极和漏极区域中的每一个上形成在所述磁性金属半导体化合物膜上的膜堆叠，所述膜堆叠包括磁性层; 以及形成在栅极侧壁上的氧化物层，所述氧化物层包含与膜堆叠中的元件相同的元件。

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