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21. 发明申请

US20070054984A1 Insulated conductive particles and anisotropic conductive adhesive film using the same 有权
标题翻译：绝缘导电颗粒和各向异性导电胶膜使用相同
公开(公告)号：US20070054984A1
公开(公告)日：2007-03-08
申请号：US11325813
申请日：2006-01-05
申请人： Jung Jun , Jin Park , Jae Lee
发明人： Jung Jun , Jin Park , Jae Lee
IPC分类号： B32B1/00 , B32B15/02 , C08K9/02
CPC分类号： H05K3/323 , H05K2201/0221 , H05K2201/0224 , Y10T428/25 , Y10T428/256 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Insulated conductive particles, anisotropic adhesive films, and electrical connections using the same are provided. In some embodiments of the present invention, an insulated conductive particle includes a conductive particle with insulating microparticles bound thereto, wherein the insulating microparticles include a hard particle region and a soft functional resin region, and wherein the soft functional resin region includes a functional group capable of binding a metal.
摘要翻译：提供绝缘导电颗粒，各向异性粘合膜和使用其的电连接。在本发明的一些实施方式中，绝缘性导电性粒子包括具有与其结合的绝缘性微粒的导电性粒子，其中绝缘性微粒包括硬质粒子区域和软质功能性树脂区域，其中，所述软质功能性树脂区域具有能够结合金属。

22. 发明申请

US20060208264A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 审中-公开
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20060208264A1
公开(公告)日：2006-09-21
申请号：US11439127
申请日：2006-05-24
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L33/00 , H01L27/15 , H01L29/167 , H01L31/12
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

23. 发明申请

US20060204525A1 Compositions and methods for preventing and treating anthrax diseases 失效
公开(公告)号：US20060204525A1
公开(公告)日：2006-09-14
申请号：US11248081
申请日：2005-10-12
申请人： Richard Rest , Michael Karin , Jin Park
发明人： Richard Rest , Michael Karin , Jin Park
IPC分类号： A61K39/07 , A61K38/16
CPC分类号： A61K39/07
摘要： Compounds, methods for identifying compounds and methods for using compounds which modulate interaction of lethal factor and anthrolysin O in the treatment and prevention of anthrax diseases are provided.

24. 发明申请

US20060149312A1 Distal protection device with improved wall apposition 审中-公开
标题翻译：远端保护装置，具有改进的墙壁配合
公开(公告)号：US20060149312A1
公开(公告)日：2006-07-06
申请号：US11026308
申请日：2004-12-30
申请人： Edward Arguello , Jin Park , Huisan Wang , Lalith Wijeratne , Christopher Widenhouse
发明人： Edward Arguello , Jin Park , Huisan Wang , Lalith Wijeratne , Christopher Widenhouse
IPC分类号： A61M29/00
CPC分类号： A61F2/013 , A61F2002/018 , A61F2230/0006 , A61F2230/005 , A61F2230/0067 , A61F2230/008 , A61F2230/0093
摘要： In accordance with the present invention, a distal protection and embolic material retrieval device with improved apposition to both large and small vessel walls of varying geometries for enhancing the filtering of embolic material during intravascular procedures while allowing for the passage of blood is provided. The device includes a filter basket designed to maximize apposition of the filtering portion to that of the vessel wall and may include struts which provide circumferential support to the filtering membrane and thereby minimizing or eliminating in-folding of the filter basket. Thin film materials may also be utilized for the filtering membrane of the filter basket. In addition one can incorporate biological and/or pharmaceutical agents in combination with the present invention.
摘要翻译：根据本发明，提供一种远程保护和栓塞材料回收装置，其具有改进的与不同几何形状的大血管壁和小血管壁的相适应，用于在血管内手术期间增强血栓过程中的过滤，同时允许血液通过。该装置包括过滤篮，该过滤篮设计成使过滤部分最大程度地与容器壁的配合最大化，并且可以包括为过滤膜提供圆周支撑并由此最小化或消除过滤篮的折叠的支柱。薄膜材料也可用于过滤篮的过滤膜。此外，可以结合本发明并入生物和/或药剂。

25. 发明申请

US20060105882A1 Hydraulic control system of automatic transmission for vehicle 有权
标题翻译：车辆自动变速器液压控制系统
公开(公告)号：US20060105882A1
公开(公告)日：2006-05-18
申请号：US11264853
申请日：2005-11-02
申请人： Jong Park , Hyeog Lee , Jin Park , Byung Shin
发明人： Jong Park , Hyeog Lee , Jin Park , Byung Shin
IPC分类号： F16H47/08 , F16H61/26
CPC分类号： F16H61/061 , F16H61/0206 , F16H2061/0253 , Y10T477/6936 , Y10T477/6937
摘要： A hydraulic control system of an automatic transmission that precisely control is operating hydraulic pressure supplied to a frictional element during shifting and can eliminate oil leak under a maximum operating hydraulic pressure. The hydraulic control system controls a hydraulic pressure generated by a hydraulic pump to from an operating hydraulic pressure for a frictional element selectively operating at each shift ratio. A hydraulic line is configured such that the operating hydraulic pressure of the frictional element is controlled by a pressure control valve and a switching valve that are controlled by a solenoid valve. An exhaust hydraulic line of the pressure control valve is connected to an exhaust hydraulic line of the switching valve such that the exhaust hydraulic line of the pressure control valve can be controlled by a switching of the switching valve.
摘要翻译：精密控制的自动变速器的液压控制系统在变速期间提供给摩擦元件的液压操作，并且可以在最大工作液压下消除油泄漏。液压控制系统控制由液压泵产生的液压，以从用于在每个换档比选择性地运行的摩擦元件的操作液压。液压管路构造成使得摩擦元件的操作液压由通过电磁阀控制的压力控制阀和切换阀来控制。压力控制阀的排气液压管线连接到切换阀的排气液压管线，使得可以通过切换阀的切换来控制压力控制阀的排气液压管路。

26. 发明申请

US20060054917A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060054917A1
公开(公告)日：2006-03-16
申请号：US10998922
申请日：2004-11-30
申请人： Jae Lee , Jeong Oh , Jin Park
发明人： Jae Lee , Jeong Oh , Jin Park
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14
摘要： A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。

27. 发明申请

US20060050594A1 Flash memory device and method of erasing flash memory cell thereof 有权
标题翻译：闪速存储器件及其闪存单元的擦除方法
公开(公告)号：US20060050594A1
公开(公告)日：2006-03-09
申请号：US11011725
申请日：2004-12-14
申请人： Jin Park
发明人： Jin Park
IPC分类号： G11C8/00
CPC分类号： G11C16/16
摘要： A flash memory device and method of erasing flash memory cells thereof are provided. The erase of a cell block unit or a page unit is effected by a word line switch included in a predecoder according to a page erase signal. If the erase is effected in the cell block unit, all word lines of one cell block are made to keep 0V. Meanwhile, if the erase is effected in the page unit, only word lines of a corresponding page are made to keep 0V and the remaining word lines are made floated, so that the erase is not performed. Accordingly, the erase can be carried out in the cell block unit or the page unit. It is thus possible to improve efficiency of data management.
摘要翻译：提供了一种闪速存储器件及其擦除闪存单元的方法。单元块单元或页单元的擦除由包含在根据页擦除信号的预解码器中的字线开关来实现。如果在单元块单元中进行擦除，则使一个单元块的所有字线保持0V。同时，如果在页面单元中进行擦除，则仅使对应页面的字线保持0V并且使剩余的字线浮动，使得不执行擦除。因此，可以在单元块单元或页单元中执行擦除。因此，可以提高数据管理的效率。

28. 发明申请

US20050208686A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 失效
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20050208686A1
公开(公告)日：2005-09-22
申请号：US10875321
申请日：2004-06-25
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L21/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

29. 发明申请

US20050075823A1 Method for predicting engine exhaust gas temperature 有权
标题翻译：发动机废气温度预测方法
公开(公告)号：US20050075823A1
公开(公告)日：2005-04-07
申请号：US10750666
申请日：2003-12-31
申请人： Jin Park
发明人： Jin Park
IPC分类号： F02D45/00 , B01D53/94 , F01N3/20 , G01K7/42 , G01K11/00 , G01K1/00
CPC分类号： G01K7/42 , F02D2200/0804
摘要： In an initial state, the exhaust gas temperature at a catalytic converter inlet is predicted based on a stored exhaust gas temperature of the previous engine shut-off and a time elapse between the previous engine shut-off and subsequent engine restart. In a steady state, the exhaust gas temperature at the catalytic converter inlet is predicted by summing the base exhaust gas temperature at the catalytic converter inlet and the exhaust pipe temperature at the catalytic converter inlet with a predetermined rate.
摘要翻译：在初始状态下，基于先前的发动机关闭的存储的废气温度和先前的发动机关闭和随后的发动机重起之间的时间经过，预测催化转化器入口处的废气温度。在稳定状态下，催化转化器入口处的废气温度通过将催化转化器入口处的基本废气温度与催化转化器入口处的排气管温度以预定的速率相加来预测。

30. 发明授权

US09842852B2 Methods of forming patterns using photoresist polymers and methods of manufacturing semiconductor devices 有权
公开(公告)号：US09842852B2
公开(公告)日：2017-12-12
申请号：US14959601
申请日：2015-12-04
申请人： Jin Park , Hyun-Woo Kim , Jin-Kyu Han , Cha-Won Koh
发明人： Jin Park , Hyun-Woo Kim , Jin-Kyu Han , Cha-Won Koh
IPC分类号： G03F7/004 , H01L27/11582 , H01L21/311 , G03F7/039 , G03F7/075 , H01L27/1157 , H01L27/11575 , H01L21/3213
CPC分类号： H01L27/11582 , G03F7/0046 , G03F7/0392 , G03F7/0758 , H01L21/31144 , H01L21/32139 , H01L21/76802 , H01L27/1157 , H01L27/11575
摘要： A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

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