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1. 发明申请

US20160170304A1 Methods of forming patterns using photoresist polymers and methods of manufacturing semiconductor devices 有权
标题翻译：使用光致抗蚀剂聚合物形成图案的方法和制造半导体器件的方法
公开(公告)号：US20160170304A1
公开(公告)日：2016-06-16
申请号：US14959601
申请日：2015-12-04
申请人： Jin PARK , Hyun-Woo Kim , Jin-Kyu Han , Cha-Won Koh
发明人： Jin PARK , Hyun-Woo Kim , Jin-Kyu Han , Cha-Won Koh
IPC分类号： G03F7/16 , H01L21/311 , G03F7/32 , H01L27/115 , G03F7/20 , H01L21/027 , H01L29/66
CPC分类号： H01L27/11582 , G03F7/0046 , G03F7/0392 , G03F7/0758 , H01L21/31144 , H01L21/32139 , H01L21/76802 , H01L27/1157 , H01L27/11575
摘要： A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.
摘要翻译：光致抗蚀剂聚合物包括第一重复单元和第二重复单元。第一重复单元包括被配置为通过光化学反应除去的氟离去基团。第二重复单元包括含氟离去基团，其被配置为当氟离去基团从第一重复单元除去时被氟离去基除去。

2. 发明授权

US09842852B2 Methods of forming patterns using photoresist polymers and methods of manufacturing semiconductor devices 有权
公开(公告)号：US09842852B2
公开(公告)日：2017-12-12
申请号：US14959601
申请日：2015-12-04
申请人： Jin Park , Hyun-Woo Kim , Jin-Kyu Han , Cha-Won Koh
发明人： Jin Park , Hyun-Woo Kim , Jin-Kyu Han , Cha-Won Koh
IPC分类号： G03F7/004 , H01L27/11582 , H01L21/311 , G03F7/039 , G03F7/075 , H01L27/1157 , H01L27/11575 , H01L21/3213
CPC分类号： H01L27/11582 , G03F7/0046 , G03F7/0392 , G03F7/0758 , H01L21/31144 , H01L21/32139 , H01L21/76802 , H01L27/1157 , H01L27/11575
摘要： A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

3. 发明授权

US09625816B2 Methods of forming patterns using photoresist polymers 有权
公开(公告)号：US09625816B2
公开(公告)日：2017-04-18
申请号：US14886155
申请日：2015-10-19
申请人： Jin Park , Hyun-Woo Kim , Jin-Kyu Han
发明人： Jin Park , Hyun-Woo Kim , Jin-Kyu Han
IPC分类号： G03F7/039 , G03F7/36 , G03F7/32 , G03F7/20 , G03F7/16 , G03F7/26 , G03F7/004 , G03F7/30
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/016 , G03F7/0392 , G03F7/16 , G03F7/168 , G03F7/2004 , G03F7/26 , G03F7/30 , G03F7/327 , G03F7/36 , H01L21/0274 , H01L29/4236
摘要： A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.

4. 发明申请

US20150093897A1 Methods of Fabricating Semiconductor Devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20150093897A1
公开(公告)日：2015-04-02
申请号：US14299495
申请日：2014-06-09
申请人： Cha-Won Koh , Hyun-Woo Kim , Jeon-ll Lee , Hyo-Sung Lee
发明人： Cha-Won Koh , Hyun-Woo Kim , Jeon-ll Lee , Hyo-Sung Lee
IPC分类号： H01L27/112 , H01L21/283 , H01L21/3065
CPC分类号： H01L27/11286 , G03F7/0002 , H01L21/283 , H01L21/3065 , H01L21/31144 , H01L21/32139 , H01L27/11548 , H01L27/11556 , H01L27/11575 , H01L27/11582
摘要： Semiconductor devices and methods of fabricating the same are provided. The methods include preparing a template having a three dimensional (3D) stair type structure formed in intaglio, forming an imprint pattern having the stair type structure using the template, and simultaneously forming stair type patterns on a substrate using the imprint pattern.
摘要翻译：提供半导体器件及其制造方法。所述方法包括制备具有以凹版形成的三维（3D）楼梯型结构的模板，使用该模板形成具有楼梯型结构的压印图案，并且使用压印图案同时在基板上形成阶梯型图案。

5. 发明授权

US09147687B2 Methods of fabricating semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09147687B2
公开(公告)日：2015-09-29
申请号：US14299495
申请日：2014-06-09
申请人： Cha-Won Koh , Hyun-Woo Kim , Jeon-Il Lee , Hyo-Sung Lee
发明人： Cha-Won Koh , Hyun-Woo Kim , Jeon-Il Lee , Hyo-Sung Lee
IPC分类号： H01L27/112 , H01L21/3065 , H01L21/283
CPC分类号： H01L27/11286 , G03F7/0002 , H01L21/283 , H01L21/3065 , H01L21/31144 , H01L21/32139 , H01L27/11548 , H01L27/11556 , H01L27/11575 , H01L27/11582
摘要： Semiconductor devices and methods of fabricating the same are provided. The methods include preparing a template having a three dimensional (3D) stair type structure formed in intaglio, forming an imprint pattern having the stair type structure using the template, and simultaneously forming stair type patterns on a substrate using the imprint pattern.
摘要翻译：提供半导体器件及其制造方法。所述方法包括制备具有以凹版形成的三维（3D）楼梯型结构的模板，使用该模板形成具有楼梯型结构的压印图案，并且使用压印图案同时在基板上形成阶梯型图案。

6. 发明授权

US10113022B2 Photoresist polymers and methods of forming patterns 有权
公开(公告)号：US10113022B2
公开(公告)日：2018-10-30
申请号：US14804775
申请日：2015-07-21
申请人： Jin Park , Hyun-Woo Kim
发明人： Jin Park , Hyun-Woo Kim
IPC分类号： G03F7/004 , C08F214/14 , C08F214/16 , C08F214/18 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/34 , C08G75/26 , G03F7/039
摘要： A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

7. 发明授权

US07384730B2 Top coating composition for photoresist and method of forming photoresist pattern using same 有权
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07384730B2
公开(公告)日：2008-06-10
申请号：US11281775
申请日：2005-11-17
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03F7/38 , H01L21/027 , G03F7/11
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041 , Y10S430/146 , Y10S430/162
摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.
摘要翻译：提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯，或其组合; 并且m，n和q是整数，其中<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= m /（m + n + q）<= 0.97， in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= n /（m + n + q）<= 0.97，<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” α> 0 <= q /（m + n + q）<= 0.5; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其中溶剂包括去离子水。

8. 发明申请

US20060277040A1 Apparatus and method for coding and decoding residual signal 有权
标题翻译：剩余信号编码和解码的装置和方法
公开(公告)号：US20060277040A1
公开(公告)日：2006-12-07
申请号：US11441955
申请日：2006-05-26
申请人： Jong-Mo Sung , Hyun-Woo Kim , Mi-Suk Lee , Do-Young Kim
发明人： Jong-Mo Sung , Hyun-Woo Kim , Mi-Suk Lee , Do-Young Kim
IPC分类号： G10L19/00
CPC分类号： G10L21/038 , G10L19/0212 , G10L19/035 , G10L19/06 , G10L19/24
摘要： Provided is a residual signal coding/decoding apparatus and method. The residual signal coding apparatus includes a transformer, an LPC coefficient extractor, an LPC coefficient quantizer, an LP analysis filter, a band splitter, a pulse searcher, and a pulse quantizer. The transformer transforms time-domain residual signals into a frequency domain to output transform coefficients. The LPC coefficient extractor extracts LPC coefficients from the transform coefficients. The LPC coefficient quantizer quantizes the LPC coefficients to output quantized LPC coefficients and corresponding indices. The LP analysis filter performs an LP analysis on the transform coefficients to output LP residual transform coefficients. The band splitter splits the LP residual transform coefficients into bands to output the LP residual transform coefficients. The pulse searcher searches the LP residual transform coefficients for the respective bands to select optimal pulses and output parameters of the optimal pulses. The pulse quantizer quantizes the parameters of the optimal pulses.
摘要翻译：提供了一种残留信号编码/解码装置和方法。残余信号编码装置包括变压器，LPC系数提取器，LPC系数量化器，LP分析滤波器，带分离器，脉冲搜索器和脉冲量化器。变压器将时域残差信号变换为频域，输出变换系数。 LPC系数提取器从变换系数中提取LPC系数。 LPC系数量化器量化LPC系数以输出量化的LPC系数和相应的索引。 LP分析滤波器对变换系数执行LP分析以输出LP残差变换系数。频带分离器将LP残差变换系数分解成频带以输出LP残差变换系数。脉冲搜索器搜索各个频带的LP残差变换系数，以选择最佳脉冲和最佳脉冲的输出参数。脉冲量化器对最佳脉冲的参数进行量化。

9. 发明申请

US20060275697A1 Top coating composition for photoresist and method of forming photoresist pattern using the same 审中-公开
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20060275697A1
公开(公告)日：2006-12-07
申请号：US11364707
申请日：2006-02-27
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/2041
摘要： Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.
摘要翻译：提供了可用于浸没式光刻的光致抗蚀剂的顶涂层组合物，以及使用其形成光致抗蚀剂图案的方法。顶部涂料组合物包括：包含至少三种不同结构重复单元的聚合物，其包括第一重复单元，其包含被烷基保护基团或酸不稳定基团取代的羧基，第二重复单元包含酸基，和第三重复单元包含极性基团的重复单元和包含醇的有机溶剂。

10. 发明申请

US20050214694A1 Pattern formation method 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20050214694A1
公开(公告)日：2005-09-29
申请号：US11010602
申请日：2004-12-13
申请人： Jin Hong , Hyun-Woo Kim , Myoung-Ho Jung , Gyung-Jin Min
发明人： Jin Hong , Hyun-Woo Kim , Myoung-Ho Jung , Gyung-Jin Min
IPC分类号： H01L21/3065 , G03F7/00 , H01L21/027 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/0273 , H01L21/0276 , H01L21/3146 , H01L21/32139 , H01L21/76801 , H01L21/76802 , H01L21/76808 , H01L21/76838
摘要： A pattern formation method comprises forming a material layer on a substrate, forming an amorphous carbon layer on the material layer, forming an anti-reflective layer on the amorphous carbon layer, forming a silicon photoresist layer on the anti-reflective layer, forming a silicon photoresist layer pattern by patterning the silicon photoresist layer, etching the anti-reflective layer and the amorphous carbon layer using the silicon photoresist layer pattern as an etch mask to form an amorphous carbon layer pattern, and etching the material layer using the amorphous carbon layer pattern as an etch mask to form a pattern in the material layer.
摘要翻译：图案形成方法包括在基板上形成材料层，在所述材料层上形成无定形碳层，在所述非晶碳层上形成抗反射层，在所述抗反射层上形成硅光致抗蚀剂层，形成硅通过图案化硅光致抗蚀剂层，使用硅光致抗蚀剂层图案蚀刻抗反射层和非晶碳层作为蚀刻掩模以形成无定形碳层图案，并使用无定形碳层图案蚀刻材料层，作为在材料层中形成图案的蚀刻掩模。

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