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21. 发明专利

JPS5987893A CIRCUIT BOARD, METHOD OF PRODUCING SAME AND SEMICONDUCTOR DEVICE USING SAME 失效
公开(公告)号：JPS5987893A
公开(公告)日：1984-05-21
申请号：JP19751982
申请日：1982-11-12
申请人： HITACHI LTD
发明人： OOTSUKA KANJI , USAMI TAMOTSU , NAKAMURA KOUSUKE , SEKI MASATOSHI , SAWARA KUNIZOU
IPC分类号： H05K1/02 , B32B18/00 , H01L23/15 , H01L23/367 , H01L23/498 , H01L23/538 , H05K1/03 , H05K3/40 , H05K3/46
摘要： A semiconductor device substrate which is sintered by a hot-pressing method at a very high temperature and under high pressure has two main faces parallel to each other, and a plurality of wires (2) formed therein to extend therethrough to end at these main faces. Semiconductor pellets (18) are bonded onto one main face, and a plurality of leads (27) are mounted onto the other main face. The substrate is made of silicon carbide containing a small quantity of beryllium, and the wires (2) of zirconium boride. A plate is prepared by preforming a powder of the substrate material and a plurality of wire stripes are printed thereon. A plurality of such plates laid over each other and hot-pressed provide a block which is sliced along planes normal to the wires, so that substrates are fabricated from the slices. Several layers (13, 14) of wiring may be formed on the substrate faces.

22. 发明专利

JPS5932162A Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：JPS5932162A
公开(公告)日：1984-02-21
申请号：JP14113482
申请日：1982-08-16
申请人： Hitachi Ltd
发明人： OOTSUKA KANJI , HOSOSAKA HIROSHI , ANZAI AKIO , SAWARA KUNIZOU , SHIRAI MASAYUKI , EMOTO YOSHIAKI
IPC分类号： H01L23/52 , H01L23/538
CPC分类号： H01L23/5383 , H01L2224/16225 , H01L2924/15312
摘要： PURPOSE:To obtain a semiconductor module capable of providing multiple pins by forming a multilayer wiring substrate of SiC, utilizing it as a heat sink path, providing heat sink means in close contact with the side surface of the substrate, releasing the upper and lower surfaces, thereby facilitate the repairing work of an electrode to be repaired. CONSTITUTION:Electrodes 3 of part of multilayer wirings 2 and an electrode 4 to be repaired are formed on the upper surface of an SiC multilayer substrate 1, and a semiconductor element 5 is mounted via a bump electrode 6 on the electrodes 3. Pins 8 are soldered to the metallized surface 7 on the lower surface of the substrate, and arranged on the entire surface. The surface 7 is conducted to the multilayer wirings 2 via Ag paste 9 in the through holes. A cooling pipe 10 is soldered at 11 to the side surface of the substrate, thereby passing coolant through the pipe. The layer 12 is for sealing provided as required. According to this structure, the heat sink is remarkably improved, repair can be facilitated, and a semiconductor module which does not disturb the formation of multiple pins can be obtained.
摘要翻译：目的：为了获得能够通过形成SiC的多层布线基板来提供多个引脚的半导体模块，利用其作为散热路径，提供与基板的侧表面紧密接触的散热装置，释放上表面和下表面从而有助于修理电极的修复工作。构成：在SiC多层基板1的上表面上形成有多层配线2的一部分的电极3和待修复的电极4，半导体元件5经由突起电极6安装在电极3上。引脚8为焊接到基板的下表面上的金属化表面7并且布置在整个表面上。表面7通过通孔中的Ag浆料9传导到多层布线2。冷却管10在11焊接到基板的侧表面，从而使冷却剂通过管。层12用于根据需要提供密封。根据该结构，散热器得到显着改善，可以进行修理，并且可以获得不干扰多个销的形成的半导体模块。

23. 发明专利

JPS595636A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS595636A
公开(公告)日：1984-01-12
申请号：JP11389782
申请日：1982-07-02
申请人： Hitachi Ltd
发明人： YAMAZAKI YASUYUKI , OOTSUKA KANJI , HOSOSAKA HIROSHI , USAMI TAMOTSU , SAWARA KUNIZOU
IPC分类号： H01L23/50 , H01L21/60
CPC分类号： H01L2224/05554 , H01L2224/32145 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/49 , H01L2224/4911 , H01L2224/49171 , H01L2924/01014 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To increase the number of inner leads, and to make the device correspond to a change into a large number of pins by disposing relay leads among a pellet and the inner leads and connecting the intermediate one parts of wires stretched among the pellet and the inner leads to the relay leads to give the wires rule. CONSTITUTION:A tab 2 is connected to a frame 5 of an outer circumference through tab leads 4, and each outer circumferential side of the inner leads 3 is constituted as outer leads 6 as external draw-out leads. The relay lead sections 9 are formed only by numbers corresponding to at least inner leads 3, and the relay leads 9 are fixed onto the tab 2 by utilizing a gold-silicon eutectic while the semiconductor pellet 10 is fastened at the center of the relay leads. The wires 12 consisting of extremely small wires are connected among the electrode pad 11 of the pellet 10 and the inner leads 3, and intermediate one parts 12a are connected to the relay lead sections 9. Lead width and pitch size can be kept equally even when the number of the electrode pads 11 and the number of the leads are increased.
摘要翻译：目的：增加内引线数量，并通过在芯片和内引线之间设置继电器引线并将中间的一段导线在芯片和引线之间拉伸，使器件对应于大量引脚的变化继电器的内部导线会导致电线规则。构成：突片2通过突片引线4连接到外周的框架5，并且内引线3的每个外周侧被构成为外引线6作为外引出线。继电器引线部分9仅由对应于至少内部引线3的数字形成，并且继电器引线9通过利用金 - 硅共晶而固定到突片2上，同时半导体芯片10紧固在中继引线的中心。由极小导线组成的电线12连接在颗粒10的电极焊盘11和内引线3之间，中间一部分12a与继电器引线部分9连接。引线宽度和间距尺寸可以保持均匀，电极焊盘11的数量和引线数量增加。

24. 发明专利

JPS57114243A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57114243A
公开(公告)日：1982-07-16
申请号：JP43981
申请日：1981-01-07
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： OOTSUKA KANJI , OKINAGA TAKAYUKI , SEKIHASHI MASAO , SAWARA KUNIZOU
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To enable to perform a microscopic work on the package wiring as well as to cut down the cost of the subject semiconductor device by a method wherein the wiring layer and the mounting section of a ceramic package are constituted chiefly of Al, and an Al eutectic alloy metal is used for the pellet adhering layer of the mounting section. CONSTITUTION:The wiring layer 7, consisting of the material having Al as a main component, and the mounting section 8 are formed on the ceramic package 1. A thin Au foil and an IC chip 9 are placed on the mounting section 8, they are fixed on the package 1 through the intermediary of an Au-Si-Al eutectic material 10. Through these procedures, a microscopic work can be performed on the ceramic package, and the quantity of gold used can be reduced, thereby enabling to cut down the cost of the subject semiconductor device.

25. 发明专利

JPS60171752A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60171752A
公开(公告)日：1985-09-05
申请号：JP2707484
申请日：1984-02-17
申请人： HITACHI LTD
发明人： USAMI TAMOTSU , SAWARA KUNIZOU , ISHIDA TAKASHI , YAMAZAKI YASUYUKI , OOTSUKA KANJI
IPC分类号： H05K1/18 , H01L23/495 , H01L23/50 , H05K3/34
摘要： PURPOSE:To avoid generation of the displacement of the position of a lead and the curve of the lead, and to remove generation of a trouble in regard to connection at manufacture of a semiconductor device by a method wherein a semiconductor package is mounted on a mounting substrate while leaving frame parts to fix the leads as they are, and the frame parts are removed after mounting is completed. CONSTITUTION:Semiconductor elements are adhered to be mounted on a multiple lead frame using an adhesive material, the semiconductor elements and the lead frame are bonded according to wire bonding using connector wires, and after wire bonding is completed, put in a metal mold, transfer molding is performed according to resin, and the molded lead frame is cut to be separated individually. At this time, to cut the frame part thereof, the frame parts 4 shown by the dotted lines are removed, while the frame parts 3 to fix the positions of the leads 2 are left, and cut to be formed. As a result, the semiconductor package is made to have the construction continuously connected with the frame parts 3 to fix the leads 2 of a large number at the tips of the leads 2 arranged by a large number to the outside of a resin sealed body 1. The resin sealed body thereof is mounted on a mounting substrate as it is, and after then the frame parts 3 are removed.

26. 发明专利

JPS60136348A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60136348A
公开(公告)日：1985-07-19
申请号：JP24380383
申请日：1983-12-26
申请人： HITACHI LTD
发明人： SAWARA KUNIZOU
IPC分类号： H01L23/36 , H01L21/52 , H01L21/58 , H01L23/057 , H01L23/24 , H01L23/367
摘要： PURPOSE:To efficiently dissipate the heat generating on a pellet and to improve the reliability of the titled semiconductor device by a method wherein a heat sink is used as a pellet mounting part. CONSTITUTION:A heat sink 4, having a number of fins 3, is attached to the hole provided almost in the center part of the printed substrate 2 having a wiring 1 on the back side using a silicon rubber bonding agent 5, and a pellet 6 is attached to the back side of the heat sink 4 using a good heat conducting adhesive agent 7 such as silver epoxy resin and the like. Besides, under the condition wherein the pellet 6 is covered by the silver gel 9, which is a protective material, together with a wire 8 with which the bonding pad of the pellet 6 and the wiring 1 are connected, the pellet 8 is sealed by the cap 11, consisting of the epoxy resin which, which is fixed by a bonding agent 10 on the back side of the printed substrate 2. Also a lead 12, which is the external terminal for mounting, is erected in the vicinity of the terminal of the printed substrate 2 in the state wherein a lead 12 is connected to the wiring located on the back side of the substrate.

27. 发明专利

JPS6020539A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6020539A
公开(公告)日：1985-02-01
申请号：JP12763383
申请日：1983-07-15
申请人： HITACHI LTD
发明人： OOTSUKA KANJI , SAWARA KUNIZOU , ISHIDA TAKASHI , YAMAZAKI YASUYUKI , SHIRAI MASAYUKI , OKUYA KEN , KAMATA CHIYOSHI , EMOTO YOSHIAKI , KOBAYASHI TSUNEO
IPC分类号： H01L23/15 , H01L23/02 , H01L23/057 , H01L23/10
摘要： PURPOSE:To obtain a semiconductor device suitable for a logic at high speed and a memory at high speed by constituting a base by a material mainly comprising silicon carbide, joining a lead frame and a reinforcing frame body with the base and joining and sealing a cover material to the reinforcing frame body. CONSTITUTION:A silicon carbide base 1 is coated with low melting-point glass 7, and glazed, and a lead frame 3 is joined by heating the glass 7. A reinforcing frame body 4 is prepared, the bottom of the frame body 4 is coated with low melting-point glass 6, the frame body 4 is joined with the upper surface of the lead frame 3 through heating, and a silicon 2 is joined by a cementing material 9. Bonding pads 2A for the pellet 2 and inner lead sections 3A in the lead frame 3 are connected electrically through wire bonding by wires 12 such as aluminum wires. A pellet sealing material 13 is potted to the whole surface. Lastly, a cover material 5 is sealed by a resin bonding material 8 with the object of mechanical protection.

28. 发明专利

JPS6020538A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6020538A
公开(公告)日：1985-02-01
申请号：JP12763283
申请日：1983-07-15
申请人： HITACHI LTD
发明人： KAMATA CHIYOSHI , OOTSUKA KANJI , SEKI MASATOSHI , SAWARA KUNIZOU , EMOTO YOSHIAKI
IPC分类号： H01L25/18 , H01L23/02 , H01L23/04 , H01L23/42 , H01L25/04 , H01L25/065
摘要： PURPOSE:To increase the contact area of a cap and base, and to improve the heat-radiating properties of a package by forming partition walls partitioning mutual pellets to the cap at every pellet or at every group of two or more pellets. CONSTITUTION:Partition walls 9 partitioning each pellet 6 on a base 1 are formed to a cap 7, and the pellets 6 are received in each of pellet receiving recessed sections 10 among the partition walls 9 one by one. The cap 7 is joined with the base 1 with sealing materials 8 even in the partition walls 9, and the contact area of the cap 7 and the base 1 is increased extremely. Grooves 11 as paths for flowing a refrigerant such as helium among each of several pellets housing recessed section 10 are formed to the bottoms of the partition walls 9.

29. 发明专利

JPS59207691A Method of producing multilayer circuit board 失效
公开(公告)号：JPS59207691A
公开(公告)日：1984-11-24
申请号：JP8085583
申请日：1983-05-11
申请人： Hitachi Ltd
发明人： KAMATA CHIYOJI , EMOTO YOSHIAKI , OOTSUKA KANJI , SAWARA KUNIZOU , SEKI MASATOSHI , KOBAYASHI TSUNEO
IPC分类号： H05K3/46 , B32B15/08 , H05K3/40

30. 发明专利

JPS5923547A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5923547A
公开(公告)日：1984-02-07
申请号：JP13194682
申请日：1982-07-30
申请人： Hitachi Ltd
发明人： SAWARA KUNIZOU , OOTSUKA KANJI
IPC分类号： H01L23/12 , H01L21/60 , H01L23/498
CPC分类号： H01L23/49866 , H01L2224/48 , H01L2224/48091 , H01L2224/48472 , H01L2924/01078 , H01L2924/15312 , H01L2924/16152 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To obtain low resistance and inexpensive fine wirings by forming by a thin film technique inner leads in a multilayer structure, and laminating a high bonding material with ceramic, conductive material and preferably contacting material with the wirings. CONSTITUTION:Inner leads 4 are laminted on a ceramic base 1 in the sequence of aluminum 11, Cu 12 and aluminum 13 from the lower layer. Rigid leads are formed without exfoliation by the high adhesive between the aluminum 11 and the ceramic 1, the aluminum 13 of upper layer improves the supersonic bonding with the aluminum wirings 5 to rigidly connect therebetween, the Cu 12 at the intermediate lowers the entire electric resistance. In manufacturing, a thin film forming method such as photocomposing method can be used. Accordingly, fine wiring pattern can be formed, coupled without Au plating, thereby reducing the cost of a semiconductor device.
摘要翻译：目的：通过薄膜技术形成多层结构的内引线，并将高粘合材料与陶瓷导电材料层叠，并优选与布线接触材料，从而获得低电阻和廉价的细布线。构成：内引线4在陶瓷基体1上以来自下层的铝11，Cu 12和铝13的顺序被分层。通过铝11和陶瓷1之间的高粘合剂形成刚性引线，上层的铝13改善与铝布线5的超音速粘合，以使它们刚性连接，中间的Cu 12降低整个电阻。在制造中，可以使用诸如光电法的薄膜形成方法。因此，可以形成精细的布线图案，在不镀Au的情况下进行耦合，从而降低半导体器件的成本。

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