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    • 21. 发明专利
    • High breakdown strength analog switch ic
    • 高切断强度模拟开关IC
    • JP2009142352A
    • 2009-07-02
    • JP2007320315
    • 2007-12-12
    • Hitachi Ltd株式会社日立製作所
    • SUDA KOICHIAIZAWA JUNICHIHONDA HIRONOBUSUGAYAMA SHIGERU
    • A61B8/00
    • PROBLEM TO BE SOLVED: To efficiently transmit high voltage transmission pulse signals from the outside to a load by providing independent bleeder resistor terminals.
      SOLUTION: This analog switch IC for an ultrasonic diagnostic apparatus comprises: high breakdown strength analog switch elements for eight channels, eight output terminals; eight independent bleeder resistor terminals; and a shift register, latch and level shift function for controlling the eight switching elements on the basis of serial control signals inputted from a control signal input terminal. The analog switch IC is resin-sealed into one package.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:通过提供独立的泄放电阻端子,有效地将外部的高电压传输脉冲信号传输到负载。 解决方案:用于超声波诊断装置的模拟开关IC包括:八个通道的高击穿强度模拟开关元件,八个输出端子; 八个独立的泄放电阻端子; 以及用于基于从控制信号输入端子输入的串行控制信号来控制八个开关元件的移位寄存器,锁存器和电平移位功能。 模拟开关IC被树脂密封成一个封装。 版权所有(C)2009,JPO&INPIT
    • 25. 发明专利
    • POWER-ON RESET CIRCUIT
    • JPH0897695A
    • 1996-04-12
    • JP23295494
    • 1994-09-28
    • HITACHI LTDHITACHI HARAMACHI SEMI CONDUCT
    • SUDA KOICHIMIYAZAKI HIDEKIMIURA MASAHITO
    • H03K17/22
    • PURPOSE: To provide an output of a reset pulse when a level of a power supply is below a threshold voltage of a power element ON and logic of other logic circuit is confirmed at application of power by connecting a P-MOS transistor(TR) and an N-MOS TR in series and providing a bias voltage to them. CONSTITUTION: A threshold voltage Vthp of a PMOS 1 is set to 3 to 5V and a threshold voltage Vthn of an NMOS 2 is set nearly to 1V. Furthermore, a relation of operating resistance RON( PMOS) >>RON( NMOS) is set. When a control power supply voltage Vcc is applied to a terminal 7, a potential at a point (b) is not definite till an initial state Vcc Vthn , NMOS TRs 2, 5 are conductive and a PMOS 1 is nonconductive and the potential at the point (b) is confirmed to be a low level. Moreover, when the vcc further rises and reaches a relation of (a voltage between the vcc and the point (a)>Vthn , the PMOS 1 is conductive and the potential at the point (b) rises till the voltage vcc and is maintained thereat. Thus, the simple and stable power-on reset circuit is configured by utilizing the threshold voltage of the MOS TRs.
    • 30. 发明专利
    • SOLAR BATTERY APPARATUS
    • JPS63143879A
    • 1988-06-16
    • JP29042286
    • 1986-12-08
    • HITACHI LTD
    • SUDA KOICHITAKASAKI HIROKAZUMATSUKUMA KUNIHIROTOMURA NOBUTAKA
    • H01L31/042H01L31/04
    • PURPOSE:To implement light weight, high mechanical strength, high weather resistance, high heat radiation and high output, by sealing the entire end part of a solar battery module with a weather resisting synthetic resin, and fixing the solar battery module to a supporting frame at a position where deflection is minimum. CONSTITUTION:A solar battery module 19 is fixed to a supporting frame 8 with supports 17. The solar battery module 19 does not use a metal frame and is sealed with a weather resisting resin, i.e., a sealing material 15 in the entire end part. As the sealing material 15, a mixture of a pigment whose main component is bisphenol A type epoxy resin with an amine resin as a hardening material, carbon powder and short glass fiber is used. The sealing material 15 is applied to the end part of the module. When the supports 17 are provided in a range of 49-66% from the center of the solar battery module in the longitudinal direction, glass 2, synthetic resin 3 and synthetic film 4 are prevented from peeling by the repetition of deflection. Thus the weight can be reduced. Since ventilation becomes better, deterioration of characteristics due to temperature increase is hard to occur.