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1. 发明专利

JPH03250668A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH03250668A
公开(公告)日：1991-11-08
申请号：JP4543390
申请日：1990-02-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OZEKI SHOICHI , SUDA KOICHI , MATSUZAKI HITOSHI , WADA MASAYUKI
IPC分类号： H01L21/8234 , H01L27/088 , H01L29/78
摘要： PURPOSE:To enable a device having multi-channels while ON resistance is reduced by a method wherein an MOS transistor formed in an integrated circuit substrate is an up-drain type as well as the shape of an exposed face of the MOS transistor is a rectangle while the ratio of a long side to the short side of the rectangle is specified. CONSTITUTION:A drain current path in an up-drain type p-channel power MOS transistor passes from a fourth layer 1034 through a channel region formed on a third layer 1033 immediately under a gate electrode 11, a first layer 1031 perpendicularly to an exposed face and reaches a drain electrode 9 through a second layer 1032. Thus ON resistance of the transistor is determined by the resistance of the channel region, the resistance of the first layer 1031 and the resistance of the second layer 1032. When an area WXL of the exposed face of the transistor is assumed to be constant, the resistance of the channel region and the resistance of the first layer 1031 do not depend on the ratio L/W of the long side and the short side of the exposed face, but the resistance of the second layer 1032 increases as the drain current path in the second layer 1032 becomes longer wherein the resistance is maximum when L/W=1 and a slope of reduction is more gentle when L/W>3.

2. 发明专利

JPH09172366A LEVEL SHIFT CIRCUIT AND INVERTER USING THE CIRCUIT 失效
公开(公告)号：JPH09172366A
公开(公告)日：1997-06-30
申请号：JP33150195
申请日：1995-12-20
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OURA HITOSHI , SUDA KOICHI , KAWAMOTO KOJI , MIURA MASAHITO
IPC分类号： H03K5/02 , H03K19/0185 , H03K19/0948 , H03K19/20
摘要： PROBLEM TO BE SOLVED: To prevent malfunction of an arm power switching element by turning off other switching elements when one switching element is turned on. SOLUTION: A dV/dt in a floating potential VM is not generated before an arm power switching element QT1 does not start turning on with an on- signal pulse from a low voltage circuit delivered to an upper arm. A resistance Ra of an off-side pulse transmission system of a level shift circuit 1 is reduced in this case by a means of the other side to reduce the resistance. Thus, a voltage drop by a resistor Rb in the on-side pulse transmission system is not caused on the occurrence of the dV/dt. Even when the occurrence of the dV/dt continues without the on-signal pulse, the signal from the off-side pulse transmission system cannot reach a flip-flop 4 by a holding function of the 'means of the other side to reduce the resistance'. Thus, even on the occurrence of the dV/dt due to self-excitation, no effect is imposed on the upper arm power switching element QT1.

3. 发明专利

JP2002076236A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002076236A
公开(公告)日：2002-03-15
申请号：JP2000267784
申请日：2000-09-04
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： HAYAKAWA SEIICHI , SAITO KATSUAKI , ISHIKAWA KATSUMI , SASAKI ATSUSHI , SUDA KOICHI , BANDO AKIRA
IPC分类号： H01L23/58 , H02M1/00 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which the temperature of a semiconductor element can be detected precisely by reducing the detection temperature difference between the temperature of the semiconductor element and the temperature of a thermistor. SOLUTION: The semiconductor device is formed, in such a way that an external cooling fin and an insulating substrate comprising metal layers fixed and bonded to main faces on both sides are bonded via a support substrate fixed and are bonded to the main face on one side of the insulating substrate. In the semiconductor device, the semiconductor element and a temperature detecting body are electrically connected to the metal layer fixed and are bonded to the main face on the other side of the insulating substrate.

4. 发明专利

JP2000058821A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000058821A
公开(公告)日：2000-02-25
申请号：JP22561998
申请日：1998-08-10
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OZEKI SHOICHI , SUDA KOICHI , UCHIUMI TOMOYUKI
IPC分类号： H01L29/78 , H01L21/76 , H01L27/04 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To facilitate to change into ICs of an IGBT and a diode by connecting a lateral IGBT, in which a collector and an emitter are extracted from a pellet surface, and a driver circuit and connecting the cathode for the diode to the collector for the IGBT on a semiconductor main surface. SOLUTION: Single crystal regions 6, 6' are formed by using an alkali anisotropic photoetching technique from a surface 2 in an N-type silicon substrate, and a lateral IGBT is formed in the single crystal region 6 and a driver circuit driving the IGBT in another single crystal region 6' respectively. In the lateral IGBT formed in the single crystal region 6, collector electrodes 13 and emitter electrodes 14 are arranged alternately in a plurality of comb shapes, the emitter electrodes 14 and anode electrodes 14' for diodes and the collector electrodes 13 and cathode electrode 13' are short-circuited respectively, and each electrode is extracted from a semiconductor main surface, and connected to the driver circuits in another single crystal region 6'.

5. 发明专利

JPH08167712A SEMICONDUCTOR DEVICE AND IC 失效
公开(公告)号：JPH08167712A
公开(公告)日：1996-06-25
申请号：JP31020294
申请日：1994-12-14
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OZEKI SHOICHI , SUDA KOICHI , OURA HITOSHI , KAWAMOTO KOJI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/739
摘要： PURPOSE: To reduce the fall time of an IGBT included in an IC by ordinary IC technology without irradiation with an electron beam by extracting a second conductivity type semiconductor layer including a collector region formed of a first conductivity type semiconductor layer as an electrode. CONSTITUTION: A heavily doped control collector layer 4 is provided on an N-type substrate 1, and brought into ohmic contact with an output electrode 4b. The potential of a second conductivity type semiconductor layer including the layer 4 made of a first conductivity type semiconductor is output as an electrode, and a circuit for short-circuiting a collector electrode 3a to a control electrode at the time of OFF of a lateral IGBT is added in an IC including the IGBT. Thus, carrier flowing to a MOS is fed from the layer 4 to the control collector electrode via the second layer and the electrode 3a via short-circuiting. Thus, at the time of OFF of the IGBT, the injection of excess carriers from the first layer to the second layer is eliminated, and hence a fall time can be shortened.

6. 发明专利

JPH02260712A SWITCHING CIRCUIT 失效
公开(公告)号：JPH02260712A
公开(公告)日：1990-10-23
申请号：JP7824789
申请日：1989-03-31
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： WADA MASAYUKI , SUDA KOICHI , MATSUZAKI HITOSHI , OZEKI SHOICHI
IPC分类号： H03K17/08
摘要： PURPOSE:To accurately perform overcurrent protection by performing the comparison of the potential of a resistor inserted between the high potential terminal of a small P-channel MOS transistor and a DC power source with the potential set as reference potential by a voltage comparator. CONSTITUTION:The comparison of a current detecting output voltage VD generated setting a source voltage VDD as reference with the voltage VP set the source voltage VDD as reference is performed by the comparator 7 operated by the DC power source setting the source voltage VDD as reference. A P-channel MOS transistor 81 is provided with a function to convert the output voltage of the comparator 7 setting the source voltage VDD as reference into the potential setting ground potential as reference, however, such conversion does not depend on the voltage fluctuation of the source voltage VDD. Logic elements 94 and 95 are operated with a current of 5V setting the ground potential as reference. In such as way, power sources for each output potential from current detecting output to comparator output and operating devices for them are comprised of the DC power source 2. Thereby, it is possible to stably perform the short-circuit protection setting of a high-side switch 1 without being affected by the fluctuation of the source voltage VDD.

7. 发明专利

JP2000223707A HORIZONTAL INSULATION GATE BIPOLAR TRANSISTOR 失效
公开(公告)号：JP2000223707A
公开(公告)日：2000-08-11
申请号：JP2696799
申请日：1999-02-04
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： UCHIUMI TOMOYUKI , OZEKI SHOICHI , SUDA KOICHI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/423 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To reduce the resistance of a gate electrode and increase a latchup preventive capability by formaing a metal interconnection layer on an emitter electrode through an insulation layer to make a contact between the metal interconnection layer and a gate electrode. SOLUTION: Connections 9b between gate electrodes 9 and 9a and contacts between the connections 9b and a gate interconnection 13 are each formed at three places along the longitudinal direction to allow gate current to flow into an aluminum-silicon interconnection through the nearest contact at the time of turn-off to reduce the resistance of the gate electrode 9 in the longitudinal direction. When connecting a plurality of unit insulation gate bipolar transistors IGBTs in parallel with each other, gate electrodes of each two adjacent unit transistors IGBTs can be easily connected through the gate interconnection 13, thereby uniforming the gate resistance of the entire IGBTs. As a result, an operating time of each unit transistor IGBT at the time of turn-off and that of the entire IGBTs can be uniformed to prevent the concentration of power and increase a latchup preventive capability.

8. 发明专利

JPH0576199A SWITCH CIRCUIT AND STEPPING MOTOR DRIVING CIRCUIT USING SAME 失效
公开(公告)号：JPH0576199A
公开(公告)日：1993-03-26
申请号：JP23440391
申请日：1991-09-13
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SAKURABA KOJI , WADA MASAYUKI , SUDA KOICHI , SHIINA CHOJI
IPC分类号： H02P8/14 , H02P8/00 , H03K17/22 , H03K19/003
摘要： PURPOSE:To prevent the breakage of a high-voltage output element by fixing the logical potential for controlling the high-voltage output element, regardless of the power sequence of a high-voltage power source and a power source. CONSTITUTION:A PMOS transistor 15 and a resistor 16 are interposed between a logic circuit 17 and an inverter so as to fix the output of the inverter Inv1 to low until a lowvoltage power source Vcc1 reaches the voltage with which the logical circuit 17 becomes stable. In case that a high-voltage power Vcch rises before, even if it becomes low output, with the output potential of the logical circuit 17 unsettled, and it becomes such logic that both the output elements connected to the high-voltage power source Vcch get in on conditions, it becomes possible to fix the output of the inverter Inv1 to low unless it becomes such that Vcc1-V1 >=2Vthp, so erroneous ON of the output element on high-voltage side can be prevented.

9. 发明专利

JPH0338052A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0338052A
公开(公告)日：1991-02-19
申请号：JP17180389
申请日：1989-07-05
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SUDA KOICHI , MATSUZAKI HITOSHI , WADA MASAYUKI , OZEKI SHOICHI
IPC分类号： H01L29/73 , H01L21/331 , H01L21/66 , H01L21/82 , H01L21/822 , H01L21/8222 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/732 , H01L29/78 , H03K19/003
摘要： PURPOSE:To accurately measure characteristics of a power element provided with a protective circuit formed in the same substrate, by connecting a resistor between the source and the gate of a P.MOS transistor, and connecting an excessive voltage protective circuit between the gate and the drain of the transistor, whose source, drain and gate are connected to terminals respectively. CONSTITUTION:The source, drain and gate of an output element 1 constituted of a P.MOS transistor are connected with a first, a second and a third bonding pads 2, 3, 4, respectively. A series circuit of resistor R1, a Zener diode 61, and a diode 62 is provided. The resistor R1 is connected between the gate and the drain of the output element 1. The Zener diode 61 is an excessive voltage protecting means 6, and, that is, the drain side become the anode. As to the diode 62, the gate side becomes the anode. By this constitution, characteristics of the power element 1 can be measured by utilizing the bonding pads 2-4 arranged on the peripheral part, even when the electrodes are mutually connected by the protective circuit 6.

10. 发明专利

JP2001298151A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001298151A
公开(公告)日：2001-10-26
申请号：JP2000118477
申请日：2000-04-14
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： ISHIKAWA KATSUMI , SASAKI ATSUSHI , HAYAKAWA SEIICHI , SUDA KOICHI , BANDO AKIRA
IPC分类号： H01L23/12 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To miniaturize an intelligent power module and increase a noise- resistant amount by a method wherein an area of a control circuit substrate inside an intelligent power module is reduced and further a control signal is hard to receive a switching noise of IGBT. SOLUTION: In an arrangement order of a major terminal of a semiconductor device, an emitter major terminal of IGBT for a lower arm, a collector major terminal of the IGBT for an upper arm, a collector of the IGBT for the lower arm, and an emitter common major terminal of the IGBT for the upper arm are disposed in the order close to a power source of a circuit for driving the IGBT and a control terminal of an input and output signal.

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