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21. 发明授权

US6139712A Method of depositing metal layer 有权
标题翻译：沉积金属层的方法
公开(公告)号：US6139712A
公开(公告)日：2000-10-31
申请号：US461279
申请日：1999-12-14
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： C25D7/12 , H01L21/687 , C25D17/16
CPC分类号： H01L21/68721 , C25D17/001 , C25D7/12 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.
摘要翻译：用于电镀晶片表面的装置包括具有由内周界限定的中心孔，邻近内周边的顺从密封件，邻近柔性密封件的接触件和连接到可旋转主轴的锥体的杯。柔性密封件与晶片表面的周边区域形成密封，防止电镀溶液污染晶片边缘，晶片背面和触点。作为防止污染的另一措施，柔性密封件后面的区域是加压的。通过在电镀期间旋转晶片，防止晶片表面上的气泡滞留。此外，触点可以布置成触点组，并且可以测试组之间的电阻率，以检测触点和晶片表面之间的差的电连接。

22. 发明授权

US6074544A Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer 无效
公开(公告)号：US6074544A
公开(公告)日：2000-06-13
申请号：US121174
申请日：1998-07-22
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
IPC分类号： C25D5/18 , C25D7/12 , C25D5/54 , C25D11/32
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.

23. 发明授权

US4994400A Method of fabricating a semiconductor device using a tri-layer structure and conductive sidewalls 失效
标题翻译：使用三层结构和导电侧壁制造半导体器件的方法
公开(公告)号：US4994400A
公开(公告)日：1991-02-19
申请号：US302519
申请日：1989-01-27
申请人： Tadanori Yamaguchi , Yeou-Chong S. Yu , Carol A. Hacherl , Evan E. Patton
发明人： Tadanori Yamaguchi , Yeou-Chong S. Yu , Carol A. Hacherl , Evan E. Patton
IPC分类号： H01L29/73 , H01L21/285 , H01L21/331 , H01L21/60 , H01L23/485 , H01L23/532 , H01L29/732
CPC分类号： H01L21/76897 , H01L21/28525 , H01L23/485 , H01L23/53271 , H01L29/66272 , H01L2924/0002 , H01L2924/12044 , Y10S148/01 , Y10S148/011
摘要： A semiconductor device is made from a body of semiconductor material having a layer of dielectric material and a first layer of conductive material over a main face of the body, the layers each having an opening therein through which an area of the main face of the body of semiconductor material is exposed. A second layer of conductive material is formed over the sides of the opening and the conductor material, whereby the second layer of conductive material is in conductive contact with the first layer of conductive material along the sides of the opening. Material of the second layer of conductive material is removed to a depth such that a portion of the main face of the body of semiconductor material is exposed but a sidewall of conductive material remains along a side of the opening and provides an electrically conductive connection between the first layer of conductive material and the body of the semiconductor material.
摘要翻译：半导体器件由半导体材料体制成，其具有介电材料层和在主体的主面上的第一导电材料层，所述层各自具有开口，通过该开口，主体的主面的区域的半导体材料被暴露。导电材料的第二层形成在开口和导体材料的侧面上，由此第二导电材料层沿着开口的侧面与第一导电材料层导电接触。第二层导电材料的材料被去除到一半深度，使得半导体材料体的主面的一部分被暴露，但是导电材料的侧壁沿着该开口的侧面保持，并且提供导电连接第一层导电材料和半导体材料的主体。

24. 发明授权

US06716334B1 Electroplating process chamber and method with pre-wetting and rinsing capability 有权
标题翻译：电镀工艺室和预润湿和冲洗能力的方法
公开(公告)号：US06716334B1
公开(公告)日：2004-04-06
申请号：US09829848
申请日：2001-04-09
申请人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
发明人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
IPC分类号： C25D502
CPC分类号： H01L21/67034 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/00 , C25D21/08 , C25D21/18
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译：电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。还提供废物通道，其具有与回收通道的入口不同的高度的入口。电镀后，将晶片提升到一个位置并旋转。在旋转的同时，将晶片用例如超纯水彻底冲洗。晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。

25. 发明授权

US06214193B1 Electroplating process including pre-wetting and rinsing 有权
标题翻译：电镀工艺包括预润湿和冲洗
公开(公告)号：US06214193B1
公开(公告)日：2001-04-10
申请号：US09374253
申请日：1999-08-13
申请人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
发明人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
IPC分类号： C25D502
CPC分类号： H01L21/67034 , C25D7/123 , C25D17/06 , C25D21/00 , C25D21/08 , C25D21/18 , C25D21/20
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译：电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。还提供废物通道，其具有与回收通道的入口不同的高度的入口。电镀后，将晶片提升到一个位置并旋转。在旋转的同时，将晶片用例如超纯水彻底冲洗。晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。

26. 发明授权

US6156167A Clamshell apparatus for electrochemically treating semiconductor wafers 失效
公开(公告)号：US6156167A
公开(公告)日：2000-12-05
申请号：US969984
申请日：1997-11-13
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： C25D7/12 , H01L21/687 , C25D17/00
CPC分类号： H01L21/68721 , C25D17/001 , C25D7/12 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

27. 发明授权

US5029117A Method and apparatus for active pyrometry 失效
标题翻译：用于高温测定的方法和装置
公开(公告)号：US5029117A
公开(公告)日：1991-07-02
申请号：US342005
申请日：1989-04-24
申请人： Evan E. Patton
发明人： Evan E. Patton
IPC分类号： G01J5/00
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0834 , G01J5/0896 , G01J2005/0048 , G01J2005/0074
摘要： The present invention constitutes a pyrometer device and an associated method of operation for measuring temperature based on the radiation emitted by a heated body in which increased accuracy is achieved by actively ascertaining the emittance of the body whose temperature is being measured. The pyrometer device includes a light source for intermittently illuminating the heated body and a radiation sensing mechanism for measuring the amount of light reflected and radiated by the body. The pyrometer device further includes a signal processing unit for processing the information developed by the radiation sensing mechanism and deriving the temperature of the body based on a calculated emittance factor and the amount of light radiated by the body.
摘要翻译：本发明构成高温计装置和相关联的操作方法，其基于由加热体发射的辐射来测量温度，其中通过主动地确定正在测量其温度的身体的发射率来实现增加的精度。高温计装置包括用于间歇地照射加热体的光源和用于测量由身体反射和辐射的光量的辐射感测机构。高温计装置还包括信号处理单元，用于处理由辐射检测机构开发的信息，并且基于所计算的发射因数和身体辐射的光量来导出身体的温度。

28. 发明授权

US06436249B1 Clamshell apparatus for electrochemically treating semiconductor wafers 有权
标题翻译：用于电化学处理半导体晶片的蛤壳式设备
公开(公告)号：US06436249B1
公开(公告)日：2002-08-20
申请号：US09576843
申请日：2000-05-17
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： C25D1700
CPC分类号： H01L21/68721 , C25D7/12 , C25D17/001 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.
摘要翻译：用于电镀晶片表面的装置包括具有由内周界限定的中心孔，邻近内周边的顺从密封件，邻近柔性密封件的接触件和连接到可旋转主轴的锥体的杯。柔性密封件与晶片表面的周边区域形成密封，防止电镀溶液污染晶片边缘，晶片背面和触点。作为防止污染的另一措施，柔性密封件后面的区域是加压的。通过在电镀期间旋转晶片，防止晶片表面上的气泡滞留。此外，触点可以布置成触点组，并且可以测试组之间的电阻率，以检测触点和晶片表面之间的差的电连接。

29. 发明授权

US6110346A Method of electroplating semicoductor wafer using variable currents and mass transfer to obtain uniform plated layer 有权
标题翻译：使用可变电流和质量传递电镀半导体晶片的方法以获得均匀的镀层
公开(公告)号：US6110346A
公开(公告)日：2000-08-29
申请号：US393848
申请日：1999-09-09
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
IPC分类号： C25D5/18 , C25D7/12 , C25D5/00 , C25D5/16 , C25D9/04
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.
摘要翻译：在电镀半导体晶片上的金属层时，电极端子所在的晶片边缘与晶片的中心之间的电阻电压降使得电镀速率在边缘比在中心处更大。作为这种所谓的“终端效应”的结果，镀层倾向于是凹的。通过首先将电流设置在相对低的电平直到电镀层足够厚以使电阻降可忽略，然后增加电流以提高电镀速率来克服该问题。或者，可以使在较高电流下产生的层的部分略微凸起，以补偿在较低电流下产生的层的部分的凹形。这是通过减少靠近晶片边缘的电镀溶液的质量传递来实现的，即在该区域中电镀过程被传质限制。结果，在这些条件下形成的层的部分在晶片的边缘附近更薄。

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