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1. 发明授权

US6156167A Clamshell apparatus for electrochemically treating semiconductor wafers 失效
公开(公告)号：US6156167A
公开(公告)日：2000-12-05
申请号：US969984
申请日：1997-11-13
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： C25D7/12 , H01L21/687 , C25D17/00
CPC分类号： H01L21/68721 , C25D17/001 , C25D7/12 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

2. 发明授权

US06436249B1 Clamshell apparatus for electrochemically treating semiconductor wafers 有权
标题翻译：用于电化学处理半导体晶片的蛤壳式设备
公开(公告)号：US06436249B1
公开(公告)日：2002-08-20
申请号：US09576843
申请日：2000-05-17
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： C25D1700
CPC分类号： H01L21/68721 , C25D7/12 , C25D17/001 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.
摘要翻译：用于电镀晶片表面的装置包括具有由内周界限定的中心孔，邻近内周边的顺从密封件，邻近柔性密封件的接触件和连接到可旋转主轴的锥体的杯。柔性密封件与晶片表面的周边区域形成密封，防止电镀溶液污染晶片边缘，晶片背面和触点。作为防止污染的另一措施，柔性密封件后面的区域是加压的。通过在电镀期间旋转晶片，防止晶片表面上的气泡滞留。此外，触点可以布置成触点组，并且可以测试组之间的电阻率，以检测触点和晶片表面之间的差的电连接。

3. 发明授权

US06343793B1 Dual channel rotary union 有权
标题翻译：双通道旋转联轴器
公开(公告)号：US06343793B1
公开(公告)日：2002-02-05
申请号：US09453471
申请日：1999-12-02
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： F16J1554
CPC分类号： H01L21/68721 , C25D7/12 , C25D17/001 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： A rotary union for use with an electroplating apparatus includes a shaft having a first surface area and an extended surface area, the first surface area having a first aperture therein, the extended surface area having a second aperture therein. The rotary union further includes an outer face seal and an inner face seal. The outer face seal is pressed against, and forms a seal with, the first surface area. The inner face seal is pressed against, and forms a seal with, the extended surface area. A pressure passage coupled to the first aperture passes through the outer face seal and around the outside of the inner face seal. A pressure/vacuum passage coupled to the second aperture passes through the inner face seal.
摘要翻译：用于电镀设备的旋转接头包括具有第一表面区域和延伸表面区域的轴，所述第一表面区域中具有第一孔，所述延伸表面区域中具有第二孔。旋转联接器还包括外表面密封件和内表面密封件。外表面密封件被压在第一表面区域上并形成密封。内表面密封件与扩展表面区域压靠并形成密封。联接到第一孔的压力通道穿过外表面密封件并且围绕内表面密封件的外侧。联接到第二孔的压力/真空通道穿过内表面密封件。

4. 发明授权

US06589401B1 Apparatus for electroplating copper onto semiconductor wafer 有权
标题翻译：用于将铜电镀到半导体晶片上的装置
公开(公告)号：US06589401B1
公开(公告)日：2003-07-08
申请号：US09718823
申请日：2000-11-22
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： C25D1700
CPC分类号： H01L21/68721 , C25D7/12 , C25D17/001 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.
摘要翻译：用于电镀晶片表面的装置包括具有由内周界限定的中心孔，邻近内周边的顺从密封件，邻近柔性密封件的接触件和连接到可旋转主轴的锥体的杯。柔性密封件与晶片表面的周边区域形成密封，防止电镀溶液污染晶片边缘，晶片背面和触点。作为防止污染的另一措施，柔性密封件后面的区域是加压的。通过在电镀期间旋转晶片，防止晶片表面上的气泡滞留。此外，触点可以布置成触点组，并且可以测试组之间的电阻率，以检测触点和晶片表面之间的差的电连接。

5. 发明授权

US6139712A Method of depositing metal layer 有权
标题翻译：沉积金属层的方法
公开(公告)号：US6139712A
公开(公告)日：2000-10-31
申请号：US461279
申请日：1999-12-14
申请人： Evan E. Patton , Wayne Fetters
发明人： Evan E. Patton , Wayne Fetters
IPC分类号： C25D7/12 , H01L21/687 , C25D17/16
CPC分类号： H01L21/68721 , C25D17/001 , C25D7/12 , H01L21/68728 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.
摘要翻译：用于电镀晶片表面的装置包括具有由内周界限定的中心孔，邻近内周边的顺从密封件，邻近柔性密封件的接触件和连接到可旋转主轴的锥体的杯。柔性密封件与晶片表面的周边区域形成密封，防止电镀溶液污染晶片边缘，晶片背面和触点。作为防止污染的另一措施，柔性密封件后面的区域是加压的。通过在电镀期间旋转晶片，防止晶片表面上的气泡滞留。此外，触点可以布置成触点组，并且可以测试组之间的电阻率，以检测触点和晶片表面之间的差的电连接。

6. 发明授权

US06815349B1 Electroless copper deposition apparatus 有权
标题翻译：无电镀铜装置
公开(公告)号：US06815349B1
公开(公告)日：2004-11-09
申请号：US10274837
申请日：2002-10-18
申请人： Edmund B. Minshall , Kevin Biggs , R. Marshall Stowell , Wayne Fetters
发明人： Edmund B. Minshall , Kevin Biggs , R. Marshall Stowell , Wayne Fetters
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , C23C18/1617 , C23C18/1669 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/1692 , C23C18/40 , H01L21/288 , H01L21/76864 , H01L21/76868 , H01L21/76873 , H01L2221/1089 , Y10S977/89
摘要： An apparatus for holding work pieces during electroless plating has certain improved features designed for use at relatively high temperatures (e.g., at least about 50 degrees C.). Cup and cone components of a “clamshell” apparatus that engage a work piece are made from dimensionally stable materials with relatively low coefficients of thermal expansion. Further, O-rings are removed from positions that come in contact with the work piece. This avoids the difficulty caused by O-rings sticking to work piece surfaces during high temperature processing. In place of the O-ring, a cantilever member is provided on the portion of the cone that contacts the work piece. Still further, the apparatus makes use of a heat transfer system for controlling the temperature of the work piece backside during plating.
摘要翻译：用于在无电镀期间保持工件的装置具有设计用于在较高温度（例如，至少约50℃）下使用的某些改进的特征。接合工件的“蛤壳式”装置的杯形和锥形部件由具有相对低的热膨胀系数的尺寸稳定的材料制成。此外，O形环从与工件接触的位置移除。这避免了在高温加工过程中O形圈粘在工件表面上造成的困难。代替O形环，悬臂构件设置在与工件接触的锥体部分上。此外，该装置利用传热系统来控制电镀期间工件背面的温度。

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