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1. 发明授权

US6099702A Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability 失效
标题翻译：具有旋转晶片保持器和预润湿和冲洗能力的电镀室
公开(公告)号：US6099702A
公开(公告)日：2000-08-08
申请号：US96015
申请日：1998-06-10
申请人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
发明人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
IPC分类号： C25D7/12 , C25D17/06 , C25D21/00 , C25D21/08 , H01L21/00
CPC分类号： H01L21/67034 , C25D17/06 , C25D21/00 , C25D21/08 , C25D21/18 , C25D21/20 , C25D7/123
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译：电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。还提供废物通道，其具有与回收通道的入口不同的高度的入口。电镀后，将晶片提升到一个位置并旋转。在旋转的同时，将晶片用例如超纯水彻底冲洗。晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。

2. 发明授权

US06716334B1 Electroplating process chamber and method with pre-wetting and rinsing capability 有权
标题翻译：电镀工艺室和预润湿和冲洗能力的方法
公开(公告)号：US06716334B1
公开(公告)日：2004-04-06
申请号：US09829848
申请日：2001-04-09
申请人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
发明人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
IPC分类号： C25D502
CPC分类号： H01L21/67034 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/00 , C25D21/08 , C25D21/18
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译：电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。还提供废物通道，其具有与回收通道的入口不同的高度的入口。电镀后，将晶片提升到一个位置并旋转。在旋转的同时，将晶片用例如超纯水彻底冲洗。晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。

3. 发明授权

US06214193B1 Electroplating process including pre-wetting and rinsing 有权
标题翻译：电镀工艺包括预润湿和冲洗
公开(公告)号：US06214193B1
公开(公告)日：2001-04-10
申请号：US09374253
申请日：1999-08-13
申请人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
发明人： Jonathan D. Reid , Steven W. Taatjes , Robert J. Contolini , Evan E. Patton
IPC分类号： C25D502
CPC分类号： H01L21/67034 , C25D7/123 , C25D17/06 , C25D21/00 , C25D21/08 , C25D21/18 , C25D21/20
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译：电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。还提供废物通道，其具有与回收通道的入口不同的高度的入口。电镀后，将晶片提升到一个位置并旋转。在旋转的同时，将晶片用例如超纯水彻底冲洗。晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。

4. 发明授权

US06162344A Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer 有权
标题翻译：使用可变电流和质量传递电镀半导体晶片以获得均匀的镀层的方法
公开(公告)号：US06162344A
公开(公告)日：2000-12-19
申请号：US393226
申请日：1999-09-09
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
IPC分类号： C25D5/18 , C25D7/12 , C25D5/00
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.
摘要翻译：在电镀半导体晶片上的金属层时，电极端子所在的晶片边缘与晶片的中心之间的电阻电压降使得电镀速率在边缘比在中心处更大。作为这种所谓的“终端效应”的结果，镀层倾向于是凹的。通过首先将电流设置在相对低的电平直到电镀层足够厚以使电阻降可忽略，然后增加电流以提高电镀速率来克服该问题。或者，可以使在较高电流下产生的层的部分略微凸起，以补偿在较低电流下产生的层的部分的凹形。这是通过减少靠近晶片边缘的电镀溶液的质量传递来实现的，即在该区域中电镀过程被传质限制。结果，在这些条件下形成的层的部分在晶片的边缘附近更薄。

5. 发明授权

US6110346A Method of electroplating semicoductor wafer using variable currents and mass transfer to obtain uniform plated layer 有权
标题翻译：使用可变电流和质量传递电镀半导体晶片的方法以获得均匀的镀层
公开(公告)号：US6110346A
公开(公告)日：2000-08-29
申请号：US393848
申请日：1999-09-09
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
IPC分类号： C25D5/18 , C25D7/12 , C25D5/00 , C25D5/16 , C25D9/04
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.
摘要翻译：在电镀半导体晶片上的金属层时，电极端子所在的晶片边缘与晶片的中心之间的电阻电压降使得电镀速率在边缘比在中心处更大。作为这种所谓的“终端效应”的结果，镀层倾向于是凹的。通过首先将电流设置在相对低的电平直到电镀层足够厚以使电阻降可忽略，然后增加电流以提高电镀速率来克服该问题。或者，可以使在较高电流下产生的层的部分略微凸起，以补偿在较低电流下产生的层的部分的凹形。这是通过减少靠近晶片边缘的电镀溶液的质量传递来实现的，即在该区域中电镀过程被传质限制。结果，在这些条件下形成的层的部分在晶片的边缘附近更薄。

6. 发明授权

US6074544A Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer 无效
公开(公告)号：US6074544A
公开(公告)日：2000-06-13
申请号：US121174
申请日：1998-07-22
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
IPC分类号： C25D5/18 , C25D7/12 , C25D5/54 , C25D11/32
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.

7. 发明授权

US06261961B1 Adhesion layer for etching of tracks in nuclear trackable materials 失效
标题翻译：用于蚀刻核可追踪材料中的轨道的粘附层
公开(公告)号：US06261961B1
公开(公告)日：2001-07-17
申请号：US09258917
申请日：1999-03-01
申请人： Jeffrey D. Morse , Robert J. Contolini
发明人： Jeffrey D. Morse , Robert J. Contolini
IPC分类号： H01L21311
CPC分类号： H01L21/32139
摘要： A method for forming nuclear tracks having a width on the order of 100-200 nm in nuclear trackable materials, such as polycarbonate (LEXAN) without causing delamination of the LEXAN. The method utilizes an adhesion film having a inert oxide which allows the track to be sufficiently widened to >200 nm without delamination of the nuclear trackable materials. The adhesion film may be composed of a metal such as Cr, Ni, Au, Pt, or Ti, or composed of a dielectric having a stable surface, such as silicon dioxide (SiO2), silicon nitride (SiNx), and aluminum oxide (AlO). The adhesion film can either be deposited on top of the gate metal layer, or if the properties of the adhesion film are adequate, it can be used as the gate layer. Deposition of the adhesion film is achieved by standard techniques, such as sputtering or evaporation.
摘要翻译：在核可追溯材料如聚碳酸酯（LEXAN）中形成宽度为100-200nm的核轨道的方法，而不会引起LEXAN的分层。该方法利用具有惰性氧化物的粘合膜，其允许轨道被充分地扩大到> 200nm，而不会使核可追踪材料分层。粘合膜可以由诸如二氧化硅（SiO 2），氮化硅（SiN x）和氧化铝（SiO 2）等具有稳定表面的电介质组成的诸如Cr，Ni，Au，Pt或Ti的金属组成， AlO）。粘附膜可以沉积在栅极金属层的顶部，或者如果粘附膜的性质足够，则可以将其用作栅极层。通过标准技术如溅射或蒸发来实现粘附膜的沉积。

8. 发明授权

US6033583A Vapor etching of nuclear tracks in dielectric materials 失效
标题翻译：电介质材料中核磁道的蒸气蚀刻
公开(公告)号：US6033583A
公开(公告)日：2000-03-07
申请号：US851258
申请日：1997-05-05
申请人： Ronald G. Musket , John D. Porter , James M. Yoshiyama , Robert J. Contolini
发明人： Ronald G. Musket , John D. Porter , James M. Yoshiyama , Robert J. Contolini
IPC分类号： C03C15/00 , C03C17/34 , C03C21/00
CPC分类号： C03C17/3417 , C03C15/00 , C03C17/3482 , C03C2218/33
摘要： A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.
摘要翻译：用于产生高纵横比（即，远大于直径的长度）的电介质材料中的核轨道的蒸汽蚀刻，已经暴露于高能原子粒子的电介质材料中的孤立的圆柱形孔。该方法包括清洁被跟踪材料的表面并将清洁的表面暴露于合适蚀刻剂的蒸汽。独立控制蒸汽和跟踪材料的温度提供了单独改变潜在轨道区域和非轨道材料的蚀刻速率的手段。通常，跟踪区域以比非跟踪区域更大的速率蚀刻。此外，通过随后在液体蚀刻剂中浸渍，可以使蒸气蚀刻的孔扩大和平滑。由气相蚀刻工艺产生的20-1000nm直径的孔可用作用于电镀纳米尺寸丝的模具，用于沉积纳米锥体的蚀刻门腔，在可追踪抗蚀剂中显影高纵横比孔，以及用于通过选择与感兴趣的液体或气体相容的电介质材料，实际上任何液体或气体中的各种分子大小的颗粒。

9. 发明授权

US5256565A Electrochemical planarization 失效
标题翻译：电化学平面化
公开(公告)号：US5256565A
公开(公告)日：1993-10-26
申请号：US348982
申请日：1989-05-08
申请人： Anthony F. Bernhardt , Robert J. Contolini
发明人： Anthony F. Bernhardt , Robert J. Contolini
IPC分类号： H01L21/28 , C23C18/31 , H01L21/3063 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L21/465
CPC分类号： H01L21/7684 , H01L21/32115
摘要： In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer.
摘要翻译：在用于制造用于集成电路结构的平坦化薄膜金属互连件的工艺中，通过电抛光，离子铣削或其它程序将平坦化金属层回蚀刻到下面的介电层。电抛光将处理时间从几小时缩短到几分钟，并允许批量处理多个晶圆。蚀刻后的平坦化薄膜互连与电介质层齐平。

10. 发明授权

US5096550A Method and apparatus for spatially uniform electropolishing and electrolytic etching 失效
标题翻译：用于空间均匀电解和电解蚀刻的方法和装置
公开(公告)号：US5096550A
公开(公告)日：1992-03-17
申请号：US597225
申请日：1990-10-15
申请人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
发明人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
IPC分类号： C25F3/02 , C25F3/16 , C25F7/00
CPC分类号： C25F7/00 , C25F3/02 , C25F3/16 , Y10S204/07
摘要： In an electropolishing or electrolytic etching apparatus the anode is separated from the cathode to prevent bubble transport to the anode and to produce a uniform current distribution at the anode by means of a solid nonconducting anode-cathode barrier. The anode extends into the top of the barrier and the cathode is outside the barrier. A virtual cathode hole formed in the bottom of the barrier below the level of the cathode permits current flow while preventing bubble transport. The anode is rotatable and oriented horizontally facing down. An extended anode is formed by mounting the workpiece in a holder which extends the electropolishing or etching area beyond the edge of the workpiece to reduce edge effects at the workpiece. A reference electrode controls cell voltage. Endpoint detection and current shut-off stop polishing. Spatially uniform polishing or etching can be rapidly performed.
摘要翻译：在电解抛光或电解蚀刻装置中，阳极与阴极分离，以防止气泡传输到阳极，并通过固体非导电阳极 - 阴极屏障在阳极处产生均匀的电流分布。阳极延伸到屏障的顶部，阴极在屏障外。形成在阴极底部的阴极底部的虚拟阴极孔允许电流流动，同时防止气泡输送。阳极可旋转并水平定向朝下。扩展阳极通过将工件安装在将电解抛光或蚀刻区域延伸超过工件边缘的保持器中形成，以减少工件的边缘效应。参考电极控制电池电压。端点检测和电流切断停止抛光。可以快速进行空间均匀的抛光或蚀刻。

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