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21. 发明授权

US06734056B2 Self-aligned punch through stop for 6F2 rotated hybrid DRAM cell 失效
标题翻译： 6F2旋转混合DRAM单元的自对准穿通停止
公开(公告)号：US06734056B2
公开(公告)日：2004-05-11
申请号：US10341831
申请日：2003-01-14
申请人： Jack A. Mandelman , Dureseti Chidambarrao
发明人： Jack A. Mandelman , Dureseti Chidambarrao
IPC分类号： H01L218238
CPC分类号： H01L27/10864 , H01L27/10841 , H01L27/10876 , H01L27/10885 , H01L27/10891
摘要： A 6F2 memory cell structure and a method of fabricating the same. The memory cell structure includes a plurality of memory cells located in a Si-containing substrate which are arranged in rows and columns. Each memory cell includes a double-gated vertical MOSFET having exposed gate conductor regions and two gates formed on opposing sidewalls of the MOSFETs. The memory cell structure also includes a plurality of wordlines overlaying the double-gated vertical MOSFETs and in contact with the exposed gate conductor regions, and a plurality of bitlines that are orthogonal to the wordlines. Trench isolation regions are located adjacent to the rows of memory cells. The memory cell structure also includes a plurality of punch through stop regions located in the Si-containing substrate and self-aligned to the wordlines and bitlines. A portion of the punch through stop regions overlap each other under the bitlines and each region serves to electrically isolate adjacent buried-strap regions from each other.
摘要翻译： 6F 2存储单元结构及其制造方法。存储单元结构包括位于含Si衬底中的以行和列排列的多个存储单元。每个存储单元包括具有暴露的栅极导体区域和形成在MOSFET的相对侧壁上的两个栅极的双门控垂直MOSFET。存储单元结构还包括覆盖双门控垂直MOSFET并与暴露的栅极导体区域接触的多个字线以及与字线正交的多个位线。沟槽隔离区位于与存储单元行相邻的位置。存储单元结构还包括位于含硅衬底中并与字线和位线自对准的多个穿通停止区域。穿通停止区域的一部分在位线之下彼此重叠，并且每个区域用于将相邻的掩埋区域彼此电隔离。

22. 发明授权

US06707095B1 Structure and method for improved vertical MOSFET DRAM cell-to-cell isolation 有权
标题翻译：用于改进垂直MOSFET DRAM单元到单元隔离的结构和方法
公开(公告)号：US06707095B1
公开(公告)日：2004-03-16
申请号：US10290400
申请日：2002-11-06
申请人： Dureseti Chidambarrao , Jack A. Mandelman , Carl J. Radens
发明人： Dureseti Chidambarrao , Jack A. Mandelman , Carl J. Radens
IPC分类号： H01L27108
CPC分类号： H01L27/10876 , H01L27/10864 , H01L27/10867
摘要： A method is provided for forming a vertical transistor memory cell structure with back-to-back FET cells which are formed in a planar semiconductor substrate with a plurality of deep trenches having vertical FET devices and a plurality of capacitors each located in a separate trench that is formed in the semiconductor substrate. Bilateral outdiffusion strap regions are formed extending into a doped semiconductor well region in the substrate. There are confronting pairs of outdiffusion strap regions extending from adjacent deep benches into the doped well region. An isolation diffusion region is formed in the doped well separating the confronting isolation diffusion regions by extending therebetween.
摘要翻译：提供了一种用于形成具有背对背FET单元的垂直晶体管存储单元结构的方法，其形成在具有多个具有垂直FET器件的深沟槽的平面半导体衬底中，并且多个电容器分别位于单独的沟槽中，形成在半导体衬底中。形成延伸到衬底中的掺杂半导体阱区域中的双边扩散带区域。存在从相邻的深长板延伸到掺杂阱区域的面向对的向外扩散带区域。在掺杂阱中形成隔离扩散区，通过在相互隔离扩散区之间延伸来分离相对的隔离扩散区。

23. 发明授权

US06573561B1 Vertical MOSFET with asymmetrically graded channel doping 失效
标题翻译：具有不对称梯度通道掺杂的垂直MOSFET
公开(公告)号：US06573561B1
公开(公告)日：2003-06-03
申请号：US10096192
申请日：2002-03-11
申请人： Dureseti Chidambarrao , Ramachandra Divakaruni , Jack A. Mandelman , Kevin McStay
发明人： Dureseti Chidambarrao , Ramachandra Divakaruni , Jack A. Mandelman , Kevin McStay
IPC分类号： H01L2976
CPC分类号： H01L27/10864 , H01L27/10876 , H01L29/1041 , H01L29/7827
摘要： Short channel effects in vertical MOSFET transistors are considerably reduced, junction leakage in DRAM cells is reduced and other device parameters are unaffected in a transistor having a vertically asymmetric threshold implant. A preferred embodiment has the peak of the threshold implant moved from the conventional location of midway between source and drain to a point no more than one third of the channel length below the bottom of the source.
摘要翻译：垂直MOSFET晶体管中的短沟道效应显着降低，在具有垂直非对称阈值注入的晶体管中，DRAM单元中的结漏电减少，其它器件参数不受影响。优选实施例具有将阈值注入的峰值从源极和漏极之间的中途的常规位置移动到不超过源极底部的沟道长度的三分之一的点。

24. 发明授权

US06222244B1 Electrically blowable fuse with reduced cross-sectional area 失效
标题翻译：具有减小横截面积的可电熔保险丝
公开(公告)号：US06222244B1
公开(公告)日：2001-04-24
申请号：US09093903
申请日：1998-06-08
申请人： Kenneth C. Arndt , Dureseti Chidambarrao , Louis L. Hsu , Jack A. Mandelman , Carl Radens
发明人： Kenneth C. Arndt , Dureseti Chidambarrao , Louis L. Hsu , Jack A. Mandelman , Carl Radens
IPC分类号： H01L2900
CPC分类号： H01L23/62 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor fuse is positioned between conductors for connecting wiring lines. The fuse comprises spacers positioned on adjacent ones of the conductors, and a fuse element positioned between the spacers and connected to the wiring lines. A space between the conductors comprises a first width comprising a smallest possible photolithographic width and the fuse element has a second width smaller than the first width.
摘要翻译：半导体保险丝位于用于连接布线的导体之间。保险丝包括位于相邻导体上的间隔物，以及定位在间隔件之间并连接到布线的熔丝元件。导体之间的空间包括包含尽可能小的光刻宽度的第一宽度，并且熔丝元件具有小于第一宽度的第二宽度。

25. 发明授权

US5729052A Integrated ULSI heatsink 失效
标题翻译：集成ULSI散热器
公开(公告)号：US5729052A
公开(公告)日：1998-03-17
申请号：US667210
申请日：1996-06-20
申请人： William R. Tonti , Jack A. Mandelman , Jerzy M. Zalesinski , Toshiharu Furukawa , Son V. Nguyen , Dureseti Chidambarrao
发明人： William R. Tonti , Jack A. Mandelman , Jerzy M. Zalesinski , Toshiharu Furukawa , Son V. Nguyen , Dureseti Chidambarrao
IPC分类号： H01L21/60 , H01L23/367 , H01L29/06 , H01L29/34 , H01L23/34
CPC分类号： H01L24/27 , H01L23/367 , H01L24/32 , H01L24/83 , H01L29/0657 , H01L29/34 , H01L2224/03505 , H01L2224/04026 , H01L2224/16225 , H01L2224/16227 , H01L2224/32057 , H01L2224/32059 , H01L2224/48091 , H01L2224/48247 , H01L2224/73253 , H01L2224/8319 , H01L2224/83385 , H01L2224/83801 , H01L24/48 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10158 , H01L2924/10253 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15312 , H01L2924/16152 , H01L2924/181 , Y10S438/928 , Y10S438/964
摘要： A simple and low cost ULSI integrated heatsink more efficiently removes heat from a silicon package by integrating the heat sink material into the silicon die, transforming the present two-dimensional art into three dimensions. The fabrication of a high power integrated ULSI package and heatsink begins by fabricating an integrated circuit wafer up to the point of dicing the wafer into individual chips. The front side of the wafer is protected, while the backside of the wafer is exposed. The exposed backside is roughened by chemical and/or mechanical process. Optionally, a gettering process is then performed to remove impurities. The roughened backside is then coated with metal interlayers, preferably aluminum (Al) followed by chromium (Cr). A layer of copper (Cu) is optionally coated on the metal interlayers. A highly conductive reflowable material, such as solder or gold eutectic, is deposited on the metal interlayers. At this point, the wafer is diced to form chips. The heatsink itself is prepared by first optionally roughening the surface and metalizing the backside of the heatsink with metal interlayer. Next, the chip is thermally attached to the heatsink by reflowing the thermally conductive reflowable material.
摘要翻译：简单且低成本的ULSI集成散热器通过将散热材料集成到硅晶片中更有效地从硅封装中去除热量，将现有的二维技术转化为三维。高功率集成ULSI封装和散热器的制造开始于制造集成电路晶片，直到将晶片切割成单个芯片。晶片的正面受到保护，而晶片的背面露出。暴露的背面通过化学和/或机械过程粗糙化。任选地，然后执行吸气过程以除去杂质。然后将粗糙的背面涂覆有金属中间层，优选铝（Al），随后涂覆铬（Cr）。一层铜（Cu）任选地涂覆在金属夹层上。高度导电的可回流材料，例如焊料或金共晶，沉积在金属夹层上。此时，晶片被切割成芯片。散热器本身通过首先任选地使表面粗糙化并用金属中间层金属化散热器的背面来制备。接下来，通过回流导热的可回流材料将芯片热连接到散热器。

26. 发明授权

US07812397B2 Ultra thin channel (UTC) MOSFET structure formed on BOX regions having different depths and different thicknesses beneath the UTC and source/drain regions and method of manufacture thereof 有权
标题翻译：在UTC和源极/漏极区域下方形成具有不同深度和不同厚度的BOX区域上的超薄沟道（UTC）MOSFET结构及其制造方法
公开(公告)号：US07812397B2
公开(公告)日：2010-10-12
申请号：US12166285
申请日：2008-07-01
申请人： Changguo Cheng , Dureseti Chidambarrao , Brian Joseph Greene , Jack A. Mandelman , Kern Rim
发明人： Changguo Cheng , Dureseti Chidambarrao , Brian Joseph Greene , Jack A. Mandelman , Kern Rim
IPC分类号： H01L21/336
CPC分类号： H01L21/2652 , H01L21/3003 , H01L29/1083 , H01L29/66545 , H01L29/6659 , H01L29/66772 , H01L29/7833 , H01L29/78603 , H01L29/78621 , H01L29/78696
摘要： A MOSFET structure includes a planar semiconductor substrate, a gate dielectric and a gate. A UT SOI channel extends to a first depth below the top surface of the substrate and is self-aligned to and is laterally coextensive with the gate. Source-drain regions, extend to a second depth greater than the first depth below the top surface, and are self-aligned to the UT channel region. A BOX1 region extends across the entire structure, and vertically from the second depth to a third depth below the top surface. An upper portion of a BOX2 region under the UT channel region is self-aligned to and is laterally coextensive with the gate, and extends vertically from the first depth to a third depth below the top surface, and where the third depth is greater than the second depth.
摘要翻译： MOSFET结构包括平面半导体衬底，栅极电介质和栅极。 UT SOI沟道延伸到衬底的顶表面下方的第一深度，并且与栅极自对准并且横向共延伸。源极 - 漏极区域延伸到大于顶部表面下方的第一深度的第二深度，并且与UT沟道区域自对准。 BOX1区域跨越整个结构延伸，并且从第二深度垂直延伸到顶表面下方的第三深度。在UT通道区域下面的BOX2区域的上部与栅极自对准并且与栅极横向共同延伸，并且从第一深度垂直延伸到顶表面下方的第三深度，并且其中第三深度大于第二深度

27. 发明授权

US06703274B1 Buried strap with limited outdiffusion and vertical transistor DRAM 有权
标题翻译：带有限制扩散和垂直晶体管DRAM的埋地带
公开(公告)号：US06703274B1
公开(公告)日：2004-03-09
申请号：US10336988
申请日：2003-01-03
申请人： Dureseti Chidambarrao , Ramachandra Divakaruni , Jack A. Mandelman , Raymond Van Roijen
发明人： Dureseti Chidambarrao , Ramachandra Divakaruni , Jack A. Mandelman , Raymond Van Roijen
IPC分类号： H02L218242
CPC分类号： H01L27/10867 , H01L27/10864 , H01L27/10876
摘要： A DRAM cell with a vertical transistor forms a buried strap outdiffusion with reduced lateral extent by shifting high temperature steps that affect the thermal budget before the initial buried strap diffusion. The gate conductor is formed in two steps, with poly sidewalls being put down above a sacrificial Trench top oxide to form a self-aligned poly-gate insulator structure before the formation of the LDD extension.
摘要翻译：具有垂直晶体管的DRAM单元通过在初始掩埋带扩散之前移动影响热预算的高温步骤而形成具有减小的横向扩展的埋地带外扩散。栅极导体形成为两个阶段，其中多个侧壁被放置在牺牲沟槽顶部氧化物之上，以在形成LDD延伸之前形成自对准多晶硅绝缘体结构。

28. 发明授权

US06686637B1 Gate structure with independently tailored vertical doping profile 有权
标题翻译：门结构具有独立定制的垂直掺杂特性
公开(公告)号：US06686637B1
公开(公告)日：2004-02-03
申请号：US10301436
申请日：2002-11-21
申请人： Omer Dokumaci , Bruce B. Doris , Oleg Gluschenkov , Jack A. Mandelman , Carl Radens
发明人： Omer Dokumaci , Bruce B. Doris , Oleg Gluschenkov , Jack A. Mandelman , Carl Radens
IPC分类号： H01L2978
CPC分类号： H01L29/66545 , H01L21/26586 , H01L21/28035 , H01L21/28044 , H01L29/1083 , H01L29/4925 , H01L29/665
摘要： A gate structure for a semiconductor transistor is disclosed. In an exemplary embodiment, the gate structure includes a lower polysilicon region doped at a first dopant concentration and an upper polysilicon region doped at a second concentration, with the second concentration being different than the first concentration. A conductive barrier layer is disposed between the lower and the upper polysilicon regions, wherein the conductive barrier layer prevents diffusion of impurities between the lower and the upper polysilicon regions.
摘要翻译：公开了一种用于半导体晶体管的栅极结构。在示例性实施例中，栅极结构包括以第一掺杂剂浓度掺杂的下多晶硅区域和以第二浓度掺杂的上多晶硅区域，其中第二浓度不同于第一浓度。导电阻挡层设置在下部和上部多晶硅区域之间，其中导电阻挡层防止杂质在下部和上部多晶硅区域之间的扩散。

29. 发明授权

US07230296B2 Self-aligned low-k gate cap 有权
标题翻译：自对准低k门帽
公开(公告)号：US07230296B2
公开(公告)日：2007-06-12
申请号：US10904391
申请日：2004-11-08
申请人： Oleg Gluschenkov , Jack A. Mandelman , Michael P. Belyansky , Bruce B. Doris
发明人： Oleg Gluschenkov , Jack A. Mandelman , Michael P. Belyansky , Bruce B. Doris
IPC分类号： H01L29/772
CPC分类号： H01L21/76834 , H01L21/28052 , H01L21/76897 , H01L29/6653 , H01L29/6659 , H01L29/7833
摘要： A CMOS structure in which the gate-to-drain/source capacitance is reduced as well as various methods of fabricating such a structure are provided. In accordance with the present invention, it has been discovered that the gate-to-drain/source capacitance can be significantly reduced by forming a CMOS structure in which a low-k dielectric material is self-aligned with the gate conductor. A reduction in capacitance between the gate conductor and the contact via ranging from about 30% to greater than 40% has been seen with the inventive structures. Moreover, the total outer-fringe capacitance (gate to outer diffusion+gate to contact via) is reduced between 10–18%. The inventive CMOS structure includes at least one gate region including a gate conductor located atop a surface of a semiconductor substrate; and a low-k dielectric material that is self-aligned to the gate conductor.
摘要翻译：提供其中栅极 - 漏极/源极电容减小的CMOS结构以及制造这种结构的各种方法。根据本发明，已经发现，通过形成其中低k电介质材料与栅极导体自对准的CMOS结构，可以显着降低栅 - 漏/源电容。本发明的结构已经看到，栅极导体和接触孔之间的电容减小范围为约30％至大于40％。此外，总外部电容（门到外部扩散+接触通孔的栅极）在10-18％之间降低。本发明的CMOS结构包括至少一个栅极区，其包括位于半导体衬底的表面上方的栅极导体; 以及与栅极导体自对准的低k电介质材料。

30. 发明授权

US07271049B2 Method of forming self-aligned low-k gate cap 失效
标题翻译：形成自对准低k栅极帽的方法
公开(公告)号：US07271049B2
公开(公告)日：2007-09-18
申请号：US11514605
申请日：2006-09-01
申请人： Oleg Gluschenkov , Jack A. Mandelman , Michael P. Belyansky , Bruce B. Doris
发明人： Oleg Gluschenkov , Jack A. Mandelman , Michael P. Belyansky , Bruce B. Doris
IPC分类号： H01L21/8238
CPC分类号： H01L21/76834 , H01L21/28052 , H01L21/76897 , H01L29/6653 , H01L29/6659 , H01L29/7833
摘要： A CMOS structure in which the gate-to-drain/source capacitance is reduced as well as various methods of fabricating such a structure are provided. In accordance with the present invention, it has been discovered that the gate-to-drain/source capacitance can be significantly reduced by forming a CMOS structure in which a low-k dielectric material is self-aligned with the gate conductor. A reduction in capacitance between the gate conductor and the contact via ranging from about 30% to greater than 40% has been seen with the inventive structures. Moreover, the total outer-fringe capacitance (gate to outer diffusion+gate to contact via) is reduced between 10-18%. The inventive CMOS structure includes at least one gate region including a gate conductor located a top a surface of a semiconductor substrate; and a low-k dielectric material that is self-aligned to the gate conductor.
摘要翻译：提供其中栅极 - 漏极/源极电容减小的CMOS结构以及制造这种结构的各种方法。根据本发明，已经发现，通过形成其中低k电介质材料与栅极导体自对准的CMOS结构，可以显着降低栅 - 漏/源电容。本发明的结构已经看到，栅极导体和接触孔之间的电容减小范围为约30％至大于40％。此外，总外部电容（门到外部扩散+接触通孔的栅极）在10-18％之间降低。本发明的CMOS结构包括至少一个栅极区，其包括位于半导体衬底的表面顶部的栅极导体; 以及与栅极导体自对准的低k电介质材料。

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