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21. 发明专利

JP2009212326A Electronic device and method of manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：JP2009212326A
公开(公告)日：2009-09-17
申请号：JP2008054388
申请日：2008-03-05
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI TAKAMITSU , FUJII TETSUO
IPC分类号： H01L23/36
CPC分类号： H01L24/32 , H01L24/29 , H01L2224/29011 , H01L2224/29076 , H01L2224/29082 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/8385 , H01L2924/14 , H01L2924/15787 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an electronic device which has a heat generating component mounted on one surface of a substrate with an adhesive containing a number of heat conductive fillers in a resin and allows efficient heat dissipation by making it easy to form a heat by thermally connecting heat conductive fillers in a direction from the heat generating component to the substrate. SOLUTION: In the resin 31 of the adhesive 30, a filmy connection member 40 is provided which is larger than the heat conductive fillers 32 and is formed of a heat conductive material and whose section is formed in a wave shape, and the connection member 40 has a wall surface 41 extending in the direction X from the heat generating component 20 to the substrate 10 among the plurality of heat conductive fillers 32. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种电子装置，其具有安装在基板的一个表面上的发热部件，其中在树脂中含有多个导热填料的粘合剂，并且通过使其易于形成而允许有效的散热通过在从发热部件到基板的方向上热连接导热填料而产生热量。解决方案：在粘合剂30的树脂31中，设置有比导热填料32大的薄膜连接构件40，并且由导热材料形成，其截面形成为波浪状，并且连接部件40具有在多个导热性填充剂32中从发热部件20向基板10向X方向延伸的壁面41.（C）2009，JPO＆INPIT

22. 发明专利

JP2009186395A Installation structure for sensor chip 有权
标题翻译：传感器芯片的安装结构
公开(公告)号：JP2009186395A
公开(公告)日：2009-08-20
申请号：JP2008028523
申请日：2008-02-08
申请人： Denso Corp , 株式会社デンソー
发明人： KAKOIYAMA NAOKI , FUJII TETSUO
IPC分类号： G01L19/06
摘要： PROBLEM TO BE SOLVED: To provide an installation structure for sensor chip capable of preventing transmission of stress to sensor chips.
SOLUTION: The sensor 10 consists mainly of the sensor chip 20, a mounted member 30 as a member to mount the sensor chip 20, and magnetic fluid 40, and the like, interposed in between the sensor chip 20 and the mounted member 30. The sensor chip 20 is held and fixed by the magnetic fluid 40 due to the surface tension of the magnetic fluid 40 concerned at the magnetic fluid flank 23, which is a surface opposite to the surface where a pressured surface 21 is formed. The magnetic fluid 40 is fixed through magnetic adsorption to a chip flank 31 of the mounted member 30 due to a permanent magnet 33 of the mounted member 30.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止传感器芯片的应力传递的传感器芯片的安装结构。解决方案：传感器10主要由传感器芯片20，作为安装传感器芯片20的构件的安装构件30和磁性流体40等介于传感器芯片20和安装构件之间传感器芯片20由于在磁性流体侧面23处所涉及的磁性流体40的表面张力而被磁性流体40保持固定，磁性流体侧面23是与形成有加压表面21的表面相反的表面。由于安装部件30的永磁体33，磁性流体40通过磁吸附固定到安装部件30的芯片侧面31上。（C）2009，JPO＆INPIT

23. 发明专利

JP2009147297A Semiconductor device having soi substrate and method for manufacturing the same 有权
标题翻译：具有SOI衬底的半导体器件及其制造方法
公开(公告)号：JP2009147297A
公开(公告)日：2009-07-02
申请号：JP2008236452
申请日：2008-09-16
申请人： Denso Corp , 株式会社デンソー
发明人： SUMITOMO MASAKIYO , ASAI MAKOTO , AKAGI NOZOMI , KITAMURA YASUHIRO , NAKAMURA HIROKI , FUJII TETSUO
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/78 , H01L29/786 , H01L29/84
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can cope with the case when various circuits such as a signal processing circuit and a high power circuit are mixed and mounted in one chip, and can suppress thickening of a SOI (Silicon On Insulator) layer. SOLUTION: A SOI substrate 4 is used, and a SOI layer 1 is formed as a low power circuit portion R1 and a support layer 2 is formed as a high power circuit portion R2. Accordingly, the thickness of the SOI layer 1 is determined in consideration of formation of the low power circuit portion R1 without considering the withstand voltage and the like of the high power circuit portion R2. Consequently, well layers have no boundary, compared with a case where a well layer is formed in a thick SOI layer, so that a parasitic capacitor can be eliminated and the increase in energy consumption and the reduction in calculation speed caused by the parasitic capacitor can be prevented. On the other hand, since the high power circuit portion R2 is formed in the support layer 2 having sufficient thickness, the withstand voltage and the like can be secured. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够应对诸如信号处理电路和高功率电路的各种电路混合并安装在一个芯片中的情况的半导体器件，并且可以抑制SOI的增厚（硅绝缘体）层。解决方案：使用SOI衬底4，并且形成SOI层1作为低功率电路部分R1，并且形成支撑层2作为高功率电路部分R2。因此，考虑到低功率电路部分R1的形成而不考虑高功率电路部分R2的耐压等来确定SOI层1的厚度。因此，与在厚SOI层中形成阱层的情况相比，阱层没有边界，从而可以消除寄生电容器，并且由寄生电容器引起的能量消耗的增加和计算速度的降低可以被阻止另一方面，由于高功率电路部分R2形成在具有足够厚度的支撑层2中，所以可以确保耐电压等。版权所有（C）2009，JPO＆INPIT

24. 发明专利

JP2009076848A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009076848A
公开(公告)日：2009-04-09
申请号：JP2008106014
申请日：2008-04-15
申请人： Denso Corp , 株式会社デンソー
发明人： AKAGI NOZOMI , KITAMURA YASUHIRO , FUJII TETSUO
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that prevents the generation of cracks or steps and falling-off of element forming regions while having an element isolation structure. SOLUTION: After forming a desired element, a thermally-oxidized film 8, electrodes 9, 11, an interlayer insulating film 10 or the like from the surface side of a wafer substrate 2, the rear-face side of the wafer substrate 2 is polished so as to reduce the thickness of the wafer substrate 2. Then, each trench 3, reaching the surface of the wafer substrate 2, is formed from the rear-face side of the wafer substrate 2 so as to form an insulating layer 4 inside each trench 3. In a film-thinning process, polishing for film-thinning can be merely applied to the face made of the wafer substrate. Thus, it is possible to uniformly reduce the thickness of the rear face of the wafer substrate 2 while preventing the generation of cracks or steps. Further, even if each trench 3 is formed, regions of the wafer substrate 2 maintain a state of being connected with each other via the thermally-oxidized film 8 or the like formed on the surface of the wafer substrate 2. Consequently, it is also possible to prevent the problem of falling-off of element forming regions 5. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件在具有元件隔离结构的同时防止产生元件形成区域的裂纹或台阶和脱落。解决方案：从晶片基板2的表面侧，晶片基板的背面侧形成热氧化膜8，电极9,11，层间绝缘膜10等之后，对晶片基板2的厚度进行研磨以减小晶片基板2的厚度。然后，从晶片基板2的背面侧形成到达晶片基板2的表面的各沟槽3，以形成绝缘层在薄膜稀化过程中，用于薄膜稀化的抛光可以仅仅施加到由晶片衬底制成的面上。因此，可以在防止产生裂缝或台阶的同时均匀地减小晶片基板2的背面的厚度。此外，即使形成每个沟槽3，晶片衬底2的区域通过形成在晶片衬底2的表面上的热氧化膜8等保持彼此连接的状态。因此，也是可能防止元件形成区域5脱落的问题。版权所有（C）2009，JPO＆INPIT

25. 发明专利

JP2009038196A Electronic device and wire bonding method 审中-公开
标题翻译：电子设备和电线连接方法
公开(公告)号：JP2009038196A
公开(公告)日：2009-02-19
申请号：JP2007200831
申请日：2007-08-01
申请人： Denso Corp , 株式会社デンソー
发明人： KOBAYASHI WATARU , MAEDA YUKIHIRO , IMADA SHINJI , KASUGAI HIROSHI , FUJII TETSUO
IPC分类号： H01L21/60 , H01L23/50
CPC分类号： H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/78 , H01L2224/85 , H01L2224/85205 , H01L2224/85385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/10161 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To perform bonding by making a support base support the connection part for a wire in a lead frame without floating it from the support base in a wire bonding method for executing wire connection to the lead frame composed by forming a groove on a surface by press work.
SOLUTION: In order to turn the connection part 30a for the wire 50 to a shape bent downwards from the groove 35 when a part 30b of the lead frame 30 positioned on the opposite side of the connection part 30a for the wire 50 from the groove 35 is horizontally positioned and the lower surface 32 of the lead frame 30 is turned to the ground direction, the lead frame 30 is bent at the part of the groove 35, the bent lead frame 30 is turned back to a straight shape by being loaded on the flat surface 310 of the support base 300 and pressed, and wire bonding is executed in the state.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了通过使支撑基座支撑引线框架中的线的连接部而不将其从支撑基座浮动的引线接合方法来支撑接合，用于执行与由成形构成的引线框架的导线的连接通过压力加工在表面上形成凹槽。解决方案：当引线框架30的位于线50的连接部分30a的相对侧上的部分30b从槽35向下弯曲时，为了使线50的连接部分30a向下弯曲，槽35水平定位，引线架30的下表面32转向地面方向，引线架30在槽35的一部分弯曲，弯曲的引线框架30通过被装载在支撑基座300的平坦表面310上并被按压，并且在该状态下执行引线接合。版权所有（C）2009，JPO＆INPIT

26. 发明专利

JP2008205297A Diode and its manufacturing method 审中-公开
标题翻译：二极管及其制造方法
公开(公告)号：JP2008205297A
公开(公告)日：2008-09-04
申请号：JP2007041170
申请日：2007-02-21
申请人： Denso Corp , 株式会社デンソー
发明人： KATO HISATO , FUJII TETSUO
IPC分类号： H01L29/861 , H01L21/329 , H01L21/822 , H01L27/04 , H01L27/06
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive diode which secures high ESD resistance and is easy to manufacture, and its manufacturing method.
SOLUTION: The diode 101 is formed by forming an LOCOS oxide film 20 on the semiconductor substrate 11 of a first conductivity type, forming a second conductivity type impurity diffusion region 30 at the surface layer part of the semiconductor substrate 11 under the LOCOS oxide film 20, and forming a PN junction face at the boundary surface of the semiconductor substrate 11 of the first conductivity type and the second conductivity type impurity diffusion region 30. The PN junction face positioned right below the LOCOS oxide film 20 is formed so as to reach the depth ≥5 μm from the surface of the semiconductor substrate 11.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供确保高耐ESD性且易于制造的廉价的二极管及其制造方法。解决方案：二极管101通过在第一导电类型的半导体衬底11上形成LOCOS氧化物膜20形成，在LOCOS下的半导体衬底11的表面层部分形成第二导电型杂质扩散区30 氧化膜20，并且在第一导电类型的半导体衬底11和第二导电类型杂质扩散区30的边界面处形成PN结面。位于LOCOS氧化物膜20正下方的PN结面形成为从半导体衬底11的表面达到≥5μm的深度。版权所有（C）2008，JPO＆INPIT

27. 发明专利

JP2008135795A Semiconductor device, and method for producing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008135795A
公开(公告)日：2008-06-12
申请号：JP2008054386
申请日：2008-03-05
申请人： Denso Corp , 株式会社デンソー
发明人： FUJII TETSUO , FUKADA TSUYOSHI , AO KENICHI , YOSHIHARA SHINJI , INOMATA SUMITOMO , MUTO KOJI
IPC分类号： H01L21/301
CPC分类号： H01L2224/45144 , H01L2224/48465 , H01L2224/73265 , H01L2924/16235 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device which is capable of preventing contamination to chips because of remaining of dicing scraps of a protective sheet and release of the protective sheet, when a semiconductor wafer covered with the protective sheet is cut into the chips by dicing. SOLUTION: The method includes steps of: fixing a protective sheet 1 to a jig 4 at the surface opposite to a surface covering a semiconductor wafer 11; removing regions of the protective sheet corresponding to regions where dicing-cut is to be performed, while fixing the protective sheet 1 to the jig 4; then, bonding the protective sheet 1 and one surface of the semiconductor wafer 11 together while fixing the protective sheet 1 to the jig 4, and removing the jig 4 from the protective sheet 1; and subsequently cutting into chips the semiconductor wafer 11 to which the protective sheet 1 is bonded by dicing along the grooves 6 that are the removed regions of the protective sheet 1. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件的制造方法，该半导体器件能够防止由于保护片的切割屑的残留和保护片的释放而导致的芯片的污染，当用保护膜覆盖的半导体晶片片通过切割切成芯片。解决方案：该方法包括以下步骤：将保护片1固定在与覆盖半导体晶片11的表面相对的表面上的夹具4; 在将保护片1固定到夹具4的同时，去除与要进行切割的区域对应的保护片的区域; 然后，将保护片1和半导体晶片11的一个表面粘合在一起，同时将保护片1固定到夹具4上，并将夹具4从保护片1上取下; 然后沿着作为保护片1的去除区域的槽6通过切割将切割保护片1的半导体晶片11切割成芯片。版权所有（C）2008，JPO＆INPIT

28. 发明专利

JP2007317695A Fixing structure and fixing method of electronic device 有权
标题翻译：电子设备的固定结构和固定方法
公开(公告)号：JP2007317695A
公开(公告)日：2007-12-06
申请号：JP2006142511
申请日：2006-05-23
申请人： Denso Corp , 株式会社デンソー
发明人： KOBAYASHI WATARU , MAEDA YUKIHIRO , NAGASAKA TAKASHI , FUJII TETSUO , FUKUDA YUTAKA
IPC分类号： H05K7/20
摘要： PROBLEM TO BE SOLVED: To achieve a novel fixing structure of electronic device for mounting an electronic device on a heat plate in which heat dissipation properties can be enhanced while exhibiting adhesive properties between the electronic device and the heat plate.
SOLUTION: In the fixing structure of electronic device, an electronic device 10 is mounted on one surface 21 of a heat plate 20, and bonded through adhesive 30. A fine split 22 is provided on one surface 21 of the heat plate 20 and located in the adhesive 30 under such a state that the tip side end of the fine split 22 touches the electronic device 10.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了实现将电子装置安装在热板上的电子装置的新颖的固定结构，其中可以提高散热性能，同时具有电子装置和加热板之间的粘合性能。解决方案：在电子设备的固定结构中，电子设备10安装在加热板20的一个表面21上，并通过粘合剂30粘合。细分22设置在加热板20的一个表面21上并且在细分22的尖端侧端接触电子设备10的状态下位于粘合剂30中。（C）2008年，JPO＆INPIT

29. 发明专利

JP2007286007A Method of producing thermal type flow sensor 审中-公开
标题翻译：生产热流型传感器的方法
公开(公告)号：JP2007286007A
公开(公告)日：2007-11-01
申请号：JP2006116826
申请日：2006-04-20
申请人： Denso Corp , 株式会社デンソー
发明人： ISOBE YOSHIHIKO , FUJII TETSUO , KAWASAKI EIJI
IPC分类号： G01F1/69 , G01F1/692
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a thermal type flow sensor capable of abolishing a level difference of semiconductor layer configuring heaters and preventing degradation of sensor properties. SOLUTION: A part except for a division comprising heater pattern out of SOI layers in the SOI substrate used for formation of a thermal type flow sensor S1 is selectively oxidized to form silicon oxide film 13 around the heater pattern. In other words, the silicon oxide film 13 of almost same thickness as the heater pattern is placed around the heaters 15a and 15b corresponding to the heater pattern, the thermometers 16a and 16b measuring ambient temperature and the wiring layers 17a to 17f. Thereby, the level difference of the heater pattern can be abolished and causes of degradation of sensor properties become possible to abolish, resulting from adhesion of contaminated material at the level difference divisions and emergence of peeling due to collision by a foregin matter. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够消除构成加热器的半导体层的电平差并防止传感器特性劣化的热式流量传感器的方法。解决方案：除了用于形成热型流量传感器S1的SOI衬底中的SOI层之外的包括加热器图案的部分之外的部分被选择性地氧化以在加热器图案周围形成氧化硅膜13。换句话说，与加热器图案相对应的加热器15a和15b周围放置与加热器图案几乎相同厚度的氧化硅膜13，测量环境温度的温度计16a和16b以及布线层17a至17f。因此，可以消除加热器图案的水平差，并且可以消除由于受到水平差分的污染物质的附着而导致的传感器特性的劣化的原因，并且由于由前体物质的碰撞而出现剥离。版权所有（C）2008，JPO＆INPIT

30. 发明专利

JP2007258236A Parting method of semiconductor substrate, and semiconductor chip manufactured thereby 有权
标题翻译：半导体衬底的分级方法和制造的半导体芯片
公开(公告)号：JP2007258236A
公开(公告)日：2007-10-04
申请号：JP2006077218
申请日：2006-03-20
申请人： Denso Corp , Hamamatsu Photonics Kk , 株式会社デンソー , 浜松ホトニクス株式会社
发明人： SUGIURA KAZUHIKO , TAMURA MUNEO , FUJII TETSUO , KUNO KOJI
IPC分类号： H01L21/301 , B23K26/00 , B23K26/38 , B23K101/42
摘要： PROBLEM TO BE SOLVED: To provide a parting method of a semiconductor substrate for preventing occurrence of particles due to abrasion, and to provide a semiconductor chip manufactured by the dividing method. SOLUTION: A laser head 31 is scanned from outer side compared to an outer peripheral end 21c of the semiconductor substrate 21 along a dividing schedule line DL, and the semiconductor substrate 21 is irradiated with a laser beam L. The condensing point P of the laser beam L is set so that it is formed in a place of depth (d) from the surface 21a of the semiconductor substrate 21. In a region 1, irradiation of the laser beam L is stopped and only a region 2 is irradiated with the laser beam L. Since the condensing points P2 of the laser beam L are not matched in a chamfering part 21b in the region 1, abrasion can be prevented. In the region 2, a reformed region K is appropriately formed in a route in depth (d), where the condensing point P of the laser beam L is scanned. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于防止由于磨损而产生颗粒的半导体衬底的分离方法，并提供通过分割方法制造的半导体芯片。
解决方案：沿着分割时间表线DL，与半导体基板21的外周端21c相比，从外侧扫描激光头31，并且用激光束L照射半导体基板21.聚光点P 激光束L被设定为从半导体基板21的表面21a形成为深度（d）的位置。在区域1中，激光L的照射停止，仅照射区域2 由于激光束L的聚光点P2在区域1中的倒角部分21b中不匹配，所以可以防止磨损。在区域2中，在扫描激光束L的聚光点P的深度（d）的路线中适当地形成改质区域K. 版权所有（C）2008，JPO＆INPIT

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