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21. 发明授权

US06451177B1 Vault shaped target and magnetron operable in two sputtering modes 失效
标题翻译：拱形靶和磁控管可在两种溅射模式下工作
公开(公告)号：US06451177B1
公开(公告)日：2002-09-17
申请号：US09703601
申请日：2000-11-01
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。优选地，磁控管包括设置在两个拱顶侧壁之后的相对极性的环形磁体和沿拱顶顶部扫描的具有相对极性的嵌套磁体的小型闭合不平衡磁控管。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

22. 发明授权

US06274008B1 Integrated process for copper via filling 失效
标题翻译：铜通过灌装的综合工艺
公开(公告)号：US06274008B1
公开(公告)日：2001-08-14
申请号：US09677946
申请日：2000-10-02
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1434
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

23. 发明授权

US08552194B2 Process for preparing quinoline-3-carboxamide derivatives 有权
公开(公告)号：US08552194B2
公开(公告)日：2013-10-08
申请号：US12989796
申请日：2009-04-27
申请人： Girish Dixit , Krishnadatt Sharma , Kundan Singh Shekhawat , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Krishnadatt Sharma , Kundan Singh Shekhawat , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： C07D215/38
CPC分类号： C07D215/56 , A61K31/4704 , C07D215/22
摘要： Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.

24. 发明授权

US08342119B2 Self aligning non contact shadow ring process kit 有权
公开(公告)号：US08342119B2
公开(公告)日：2013-01-01
申请号：US11870285
申请日：2007-10-10
申请人： Joseph Yudovsky , Lawrence C. Lei , Salvador Umotoy , Tom Madar , Girish Dixit , Gwo-Chuan Tzu
发明人： Joseph Yudovsky , Lawrence C. Lei , Salvador Umotoy , Tom Madar , Girish Dixit , Gwo-Chuan Tzu
IPC分类号： C23C16/458
CPC分类号： C23C16/4585 , C30B25/12 , C30B31/14
摘要： The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

25. 发明授权

US07848839B2 System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss 有权
标题翻译：用于铜低介电镶嵌结构的端点检测方案的系统，方法和介质，用于改善电介质和铜损耗
公开(公告)号：US07848839B2
公开(公告)日：2010-12-07
申请号：US12004730
申请日：2007-12-21
申请人： Ajoy Zutshi , Rahul Surana , Girish Dixit
发明人： Ajoy Zutshi , Rahul Surana , Girish Dixit
IPC分类号： G06F19/00 , G05B15/00
CPC分类号： B24B37/013 , B24B49/12 , G01N21/55 , H01L22/26
摘要： A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.
摘要翻译：在化学机械抛光工艺期间检测半导体晶片中的第一介电材料和相邻的第二介电材料之间的过渡界面的系统，方法和介质包括在第一时间在半导体晶片上入射预定波长的入射光检测至少一个第一强度的至少一个第一反射光，在第二时间将预定波长的入射光照射在半导体晶片上，检测至少一个第二强度的至少一个第二反射光，并确定差异在所述至少一个第一强度和所述至少一个第二强度之间。如果所述至少一个第一强度和所述至少一个第二强度之间的差异高于预定阈值，则终止所述化学机械抛光处理。

26. 发明申请

US20100260851A1 Novel Polymorph of Atorvastatin Calcium and Use Thereof for the Preparation of Amorphous Atorvastatin Calcium 审中-公开
标题翻译：阿托伐他汀钙的新型多态性及其用于制备无定形阿托伐他汀钙的方法
公开(公告)号：US20100260851A1
公开(公告)日：2010-10-14
申请号：US12668433
申请日：2008-07-11
申请人： Girish Dixit , Anil Shahaji Khile , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Anil Shahaji Khile , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： A61K9/14 , A61K31/40 , C07D207/34 , A61P3/06 , A61P9/10
CPC分类号： C07D207/34
摘要： The present invention provides a novel polymorphic form of atorvastatin calcium, designated as form Al, process for preparation, pharmaceutical compositions, and method of treating thereof. The present invention further provides a process for the preparation of highly pure amorphous atorvastatin calcium using the novel atorvastatin calcium form Al. The present invention also relates to novel amorphous form of atorvastatin tert-butyl ester, chemically known as [R-(R*,R*)]-2-(4-fluorophenyl)-[β],[δ]-dihydroxy -5-(1-methylethyl)-3-phenyl-4-(phenylcarbamoyl-1H-pyrrole-1-heptanoicacid tert-butyl ester, process for the preparation, and its application for preparing highly pure atorvastatin and its pharmaceutically acceptable salts thereof. The present invention also relates to use of the novel amorphous atorvastatin tert-butyl ester and novel atorvastatin calcium form al for preparing amorphous atorvastatin calcium.
摘要翻译：本发明提供了一种新型的阿托伐他汀钙多形态，称为形式A1，制备方法，药物组合物及其处理方法。本发明还提供使用新型阿托伐他汀钙形式Al制备高纯度无定形阿托伐他汀钙的方法。本发明还涉及化学上称为[R-（R *，R *）] - 2-（4-氟苯基） - [[b]]，[δ] - 二羟基 - 5-（1-甲基乙基）-3-苯基-4-（苯基氨基甲酰基-1H-吡咯-1-庚酸叔丁酯，其制备方法及其制备高纯度阿托伐他汀及其药学上可接受的盐的应用）本发明还涉及新型无定形阿托伐他汀叔丁酯和新型阿托伐他汀钙形式用于制备无定形阿托伐他汀钙的用途。

27. 发明申请

US20070095654A1 Controlled multi-step magnetron sputtering process 审中-公开
标题翻译：受控多级磁控溅射工艺
公开(公告)号：US20070095654A1
公开(公告)日：2007-05-03
申请号：US11636751
申请日：2006-12-11
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/00
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

28. 发明申请

US20050255700A1 Controlled multi-step magnetron sputtering process 审中-公开
标题翻译：受控多级磁控溅射工艺
公开(公告)号：US20050255700A1
公开(公告)日：2005-11-17
申请号：US11166836
申请日：2005-06-24
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

29. 发明申请

US20050239293A1 POST TREATMENT OF LOW K DIELECTRIC FILMS 有权
标题翻译：低K电介质膜的后处理
公开(公告)号：US20050239293A1
公开(公告)日：2005-10-27
申请号：US10830203
申请日：2004-04-21
申请人： Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
发明人： Zhenjiang Cui , Josephine Chang , Alexandros Demos , Reza Arghavani , Derek Witty , Helen Armer , Girish Dixit , Hichem M'Saad
IPC分类号： H01L21/314 , H01L21/316 , H01L21/4763 , H01L21/26 , H01L21/31 , H01L21/324 , H01L21/42 , H01L21/469 , H01L21/477
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351
摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
摘要翻译：提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

30. 发明申请

US20050224722A1 Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam 审中-公开
标题翻译：用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置
公开(公告)号：US20050224722A1
公开(公告)日：2005-10-13
申请号：US11002600
申请日：2004-12-01
申请人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
发明人： Alexandros Demos , Khaled Elsheref , Yuri Trachuk , Tom Cho , Girish Dixit , Hichem M'Saad , Derek Witty
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J2237/0041
摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
摘要翻译：根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

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