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    • 28. 发明申请
    • Method For Manufacturing Wraparound Shield Write Head Using Hard Masks
    • 使用硬掩模制造绕组屏蔽写头的方法
    • US20130026131A1
    • 2013-01-31
    • US13193520
    • 2011-07-28
    • Shiwen HuangFenglin LiuQiping ZhongKyusik ShinYingjian Chen
    • Shiwen HuangFenglin LiuQiping ZhongKyusik ShinYingjian Chen
    • G11B5/127
    • G11B5/3116G11B5/3163
    • The present disclosure describes a method for manufacturing a full wraparound shield damascene write head through the implementation of a three layered (tri-layered) hard mask. According to an embodiment of the invention, the various layers of hard mask are used for different purposes during the formation of a write head. The wraparound shield head of the present invention exhibits improved physical characteristics that further result in improved performance characteristics. Use of the hard mask layers according to the present invention allows for use of manufacturing processes that can be more closely controlled than those processes used in other processes. For example, smaller dimension lithographic techniques can be used. Also, reliance on certain CMP processes is not necessary where the use of CMP processes is not as well-controlled as deposition or lithographic techniques as is possible using the present invention.
    • 本公开描述了通过实施三层(三层)硬掩模制造全封装屏蔽镶嵌写头的方法。 根据本发明的实施例,在形成写入头期间,各种硬掩模层用于不同的目的。 本发明的环绕式屏蔽头表现出改进的物理特性,进一步导致改善的性能特征。 根据本发明的硬掩模层的使用允许使用可以比其它工艺中使用的那些方法更加严格地控制的制造工艺。 例如,可以使用较小尺寸的光刻技术。 此外,在使用CMP工艺不如使用本发明可能的沉积或光刻技术那样不受控制的情况下,对某些CMP工艺的依赖是不必要的。