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21. 发明授权

US07383843B2 Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer 有权
标题翻译：使用薄的高速流体层处理晶片表面的方法和装置
公开(公告)号：US07383843B2
公开(公告)日：2008-06-10
申请号：US10882835
申请日：2004-06-30
申请人： Michael Ravkin , Michael G. R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
发明人： Michael Ravkin , Michael G. R. Smith , John M. de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
IPC分类号： B08B3/00 , F26B5/04
CPC分类号： H01L21/67051 , C25D5/08 , C25D17/00 , C25D17/001 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , Y10S134/902
摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
摘要翻译：在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体通过真空。流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

22. 发明申请

US20060131268A1 Non-contact discrete removal of substrate surface contaminants/coatings, and method, apparatus, and system for implementing the same 审中-公开
标题翻译：非接触式离子去除基材表面污染物/涂层，以及用于实施其的方法，装置和系统
公开(公告)号：US20060131268A1
公开(公告)日：2006-06-22
申请号：US11020431
申请日：2004-12-21
申请人： Katrina Mikhaylichenko , Vladislav Yakovlev , Michael Ravkin , John Larios , Fritz Redeker
发明人： Katrina Mikhaylichenko , Vladislav Yakovlev , Michael Ravkin , John Larios , Fritz Redeker
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C15/00
CPC分类号： H01L21/31116 , B23K26/356 , B23K26/40 , B23K2103/172 , H01L21/0209
摘要： A substrate preparation method is provided. The method includes providing a substrate to be prepared. The substrate has a first layer and a second layer. The first layer is to be removed from over the second layer. An energy frequency that is to be absorbed by the second layer while penetrating through the first layer transparently is determined. Energy that has the determined energy frequency is applied onto the first layer so as to disrupt a bond between the first layer and the second layer at a location of application of the energy. A portion of the first layer defined at the location of application of energy is removed. A substrate preparation apparatus is also provided.
摘要翻译：提供了底物制备方法。该方法包括提供待制备的基底。衬底具有第一层和第二层。第一层将从第二层上移除。确定在透过第一层时被第二层吸收的能量频率。具有确定的能量频率的能量被施加到第一层上，以便在施加能量的位置处破坏第一层和第二层之间的结合。去除在施加能量的位置限定的第一层的一部分。还提供了基板制备装置。

23. 发明申请

US20060016029A1 Brush scrubbing-high frequency resonating substrate processing system 有权
标题翻译：刷洗 - 高频谐振衬底处理系统
公开(公告)号：US20060016029A1
公开(公告)日：2006-01-26
申请号：US11241213
申请日：2005-09-30
申请人： Katrina Mikhaylichenko , Fritz Redeker
发明人： Katrina Mikhaylichenko , Fritz Redeker
IPC分类号： B08B3/12
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/12
摘要： A substrate processing system is provided. The substrate processing system comprises a brush assembly that includes a core, a transducer, and a brush. The core is configured to include a plurality of orifices extending from a center of the brush core to an outer surface of the brush core. The transducer is configured to be disposed on an outer surface of the core. The transducer is capable of resonating at a high frequency. The brush includes a plurality of openings, and is configured to cover the transducer. When the transducer resonates at the high frequency, high energy acoustic energy is imparted from the transducer to a surface of a substrate to be prepared at a respective location of each opening of the plurality of openings.
摘要翻译：提供了基板处理系统。基板处理系统包括包括芯，换能器和刷子的刷组件。芯被配置为包括从刷芯的中心延伸到刷芯的外表面的多个孔。换能器被配置为设置在芯的外表面上。换能器能够以高频谐振。刷子包括多个开口，并且构造成覆盖换能器。当换能器以高频率谐振时，高能声能从换能器传递到要在多个开口的每个开口的相应位置准备的基板的表面。

24. 发明申请

US20050145265A1 Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer 有权
标题翻译：使用薄的高速流体层处理晶片表面的方法和装置
公开(公告)号：US20050145265A1
公开(公告)日：2005-07-07
申请号：US10882835
申请日：2004-06-30
申请人： Michael Ravkin , Michael Smith , John de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
发明人： Michael Ravkin , Michael Smith , John de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
IPC分类号： B08B3/00 , B08B3/04 , C25D5/08 , C25D5/22 , C25D7/12 , C25D17/00 , H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/67051 , C25D5/08 , C25D17/00 , C25D17/001 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , Y10S134/902
摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
摘要翻译：在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体通过真空。流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

25. 发明申请

US20050133060A1 Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids 失效
标题翻译：使用压缩和/或加压泡沫，气泡和/或液体清洁半导体晶片的方法和设备
公开(公告)号：US20050133060A1
公开(公告)日：2005-06-23
申请号：US10746114
申请日：2003-12-23
申请人： John Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fritz Redeker , Aleksander Owczarz
发明人： John Larios , Mike Ravkin , Jeffrey Farber , Mikhail Korolik , Fritz Redeker , Aleksander Owczarz
IPC分类号： B08B3/00 , H01L21/00 , B08B3/04
CPC分类号： B08B3/003 , H01L21/67028 , H01L21/67046 , Y10S134/902
摘要： An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer, such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer, is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.
摘要翻译：公开了一种装置和方法，其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。半导体晶片被支撑在刚性支撑件（或泡沫层）上，并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。然后，在卡住的泡沫与半导体晶片接触的同时，形成半导体晶片之间的相对运动（例如平行于和/或垂直于半导体晶片的顶表面的振荡），以除去不需要的污染物和/或以其他方式使用泡沫化学处理半导体晶片的表面。

26. 发明授权

US08673769B2 Methods and apparatuses for three dimensional integrated circuits 有权
标题翻译：三维集成电路的方法和装置
公开(公告)号：US08673769B2
公开(公告)日：2014-03-18
申请号：US11821051
申请日：2007-06-20
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： H01L21/4763
CPC分类号： H01L21/44 , H01L21/76898 , H01L23/48 , H01L23/481 , H01L25/50 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatuses for fabricating three-dimensional integrated circuits having through hole vias are provided. One aspect of the present invention is a method of gapfill for through hole vias for three-dimensional integrated circuits. The method comprises providing a semiconductor wafer having a plurality of holes for through hole vias and depositing a conformal metal layer to partially fill the holes to leave open voids. The method also includes purging the voids and cleaning the surface of the voids and using a dry deposition process to fill or close the voids. Another aspect of the present invention is an electronic device structure for a three-dimensional integrated circuit.
摘要翻译：提供了具有通孔的三维集成电路的制造方法和装置。本发明的一个方面是用于三维集成电路的通孔通孔的间隙填充方法。该方法包括提供具有用于通孔通孔的多个孔的半导体晶片，并且沉积保形金属层以部分填充孔以留下开孔。该方法还包括清除空隙并清洁空隙的表面，并使用干式沉积工艺填充或封闭空隙。本发明的另一方面是一种用于三维集成电路的电子设备结构。

27. 发明授权

US08133812B2 Methods and systems for barrier layer surface passivation 有权
标题翻译：阻挡层表面钝化的方法和系统
公开(公告)号：US08133812B2
公开(公告)日：2012-03-13
申请号：US12562955
申请日：2009-09-18
申请人： Yezdi Dordi , John Boyd , Fritz Redeker , William Thie , Tiruchirapalli Arunagiri , Alex Yoon
发明人： Yezdi Dordi , John Boyd , Fritz Redeker , William Thie , Tiruchirapalli Arunagiri , Alex Yoon
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： C23C8/02 , C23C8/80 , C23C10/02 , C23C10/60 , C23C16/54 , C23C16/56 , C23C18/1601 , C23C18/1632 , C23C18/54 , C23C26/00 , C23C28/023 , C23C28/322 , C23C28/34 , C25D7/123 , C25D17/001 , H01L21/67161 , H01L21/67207 , H01L21/76855 , H01L21/76861 , H01L21/76862 , H01L21/76873
摘要： This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.
摘要翻译：本发明涉及用于制造半导体器件的方法和系统。本发明的一个方面是在用于半导体器件金属化的阻挡层上沉积间隙填充铜层的方法。在一个实施例中，该方法包括在衬底的表面上形成阻挡层，并使阻挡层经受处理条件，以便在阻挡层上形成可移除的钝化表面。该方法还包括从阻挡层去除钝化表面并将间隙填充铜层沉积到阻挡层上。本发明的另一方面是用于在用于半导体器件金属化的阻挡层上沉积铜层的集成系统。在一个实施例中，集成系统包括被配置用于阻挡层沉积和钝化表面形成的至少一个工艺模块和被配置用于钝化表面去除和沉积到阻挡层上的至少一个其它工艺模块。所述系统还包括至少一个传送模块，所述至少一个传送模块被耦合，使得所述衬底可以在所述模块之间基本上不被暴露于形成氧化物的环境

28. 发明授权

US08053355B2 Methods and systems for low interfacial oxide contact between barrier and copper metallization 有权
标题翻译：屏障和铜金属化之间的低界面氧化物接触的方法和系统
公开(公告)号：US08053355B2
公开(公告)日：2011-11-08
申请号：US12828082
申请日：2010-06-30
申请人： Fritz Redeker , John Boyd , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： Fritz Redeker , John Boyd , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： H01L21/4763
CPC分类号： C25D7/123 , C23C18/1653 , C23C28/023 , C23C28/322 , C23C28/34 , C23C28/341 , H01L21/28562 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.
摘要翻译：本发明涉及用于半导体器件金属化的方法和系统。本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。该方法还包括在ALD铜上沉积间隙填充铜层。本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。在一个实施例中，集成系统包括至少一个阻挡层沉积模块。该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

29. 发明授权

US08034409B2 Methods, apparatuses, and systems for fabricating three dimensional integrated circuits 有权
标题翻译：用于制造三维集成电路的方法，装置和系统
公开(公告)号：US08034409B2
公开(公告)日：2011-10-11
申请号：US11958025
申请日：2007-12-17
申请人： Shijian Li , Fritz Redeker , Yezdi Dordi
发明人： Shijian Li , Fritz Redeker , Yezdi Dordi
IPC分类号： C23C16/00
CPC分类号： H01L21/70 , C23C16/045 , C23C16/4586 , H01L21/67017 , H01L21/677 , H01L21/6838 , H01L21/68714 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/12044 , Y10T24/44 , H01L2924/00012 , H01L2924/00
摘要： The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One embodiment of the method comprises providing a wafer or other substrate having a plurality of through holes. In addition, the method includes supporting the wafer or other substrate with a wafer or other substrate holder mounted in a process chamber. The method further includes generating a pressure differential between the front side of the wafer or other substrate and the back side of the wafer or other substrate while the wafer or other substrate is supported on the wafer or other substrate holder so that the pressure differential causes fluid flow through the through holes. Also, the method includes establishing process conditions in the process chamber for at least one process to fabricate integrated circuits. Embodiments of a system and embodiments of an apparatus according to the present invention are also presented.
摘要翻译：本发明涉及用于制造三维集成电路的方法，装置和系统。该方法的一个实施例包括提供具有多个通孔的晶片或其它基板。此外，该方法包括用安装在处理室中的晶片或其它衬底保持器来支撑晶片或其它衬底。该方法还包括在晶片或其它基板被支撑在晶片或其它基板保持器上的同时，在晶片或其它基板的前侧与晶片或其它基板的背面之间产生压差，使得压力差导致流体流过通孔。此外，该方法包括在处理室中建立用于制造集成电路的至少一个工艺的工艺条件。还提供了根据本发明的系统和实施例的装置的实施例。

30. 发明授权

US07897213B2 Methods for contained chemical surface treatment 失效
标题翻译：含化学表面处理方法
公开(公告)号：US07897213B2
公开(公告)日：2011-03-01
申请号：US11704435
申请日：2007-02-08
申请人： Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker , John M. de Larios , Erik M. Freer , Mikhail Korolik
发明人： Katrina Mikhaylichenko , Mike Ravkin , Fritz Redeker , John M. de Larios , Erik M. Freer , Mikhail Korolik
IPC分类号： B05D5/00
CPC分类号： H01L21/02057 , C25D5/34 , C25D7/12 , H01L21/288 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/76841
摘要： An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions. In an alternate example, a second non-Newtonian fluid is applied to the treatment region instead of the Newtonian fluid. The second non-Newtonian fluid acts on one or more contaminants on the surface of the substrate substantially removing them from the surface of the substrate.
摘要翻译：使用接近头来制备基底的表面的装置，系统和方法包括在基底的表面和邻近头的头表面之间施加非牛顿流体。非牛顿流体在头表面和基底表面之间沿着一个或多个侧面限定了容纳壁。设置有非牛顿流体的一个或多个侧面限定了头表面和基底表面之间的基底上的处理区域。通过邻近头将牛顿流体施加到基底的表面，使得所施加的牛顿流体基本上包含在由容纳壁限定的处理区域中。所含的牛顿流体有助于从基底表面去除一种或多种污染物。在一个示例中，非牛顿流体也可以用于创建环境控制的隔离区域，这可以有助于区域内的表面的受控处理。在替代示例中，将第二非牛顿流体施加到处理区域而不是牛顿流体。第二非牛顿流体作用于衬底表面上的一种或多种污染物，基本上将其从衬底的表面上除去。

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