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    • 2. 发明申请
    • Apparatus and method for confined area planarization
    • 限制区域平面化的装置和方法
    • US20070227656A1
    • 2007-10-04
    • US11395881
    • 2006-03-31
    • John BoydFritz RedekerYezdi DordiMichael RavkinJohn Larios
    • John BoydFritz RedekerYezdi DordiMichael RavkinJohn Larios
    • H01L21/461H01L21/306
    • H01L21/32115C25F7/00
    • A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
    • 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力,使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。
    • 6. 发明授权
    • Chemically assisted mechanical cleaning of MRAM structures
    • MRAM结构的化学辅助机械清洗
    • US07067016B1
    • 2006-06-27
    • US10404403
    • 2003-03-31
    • Katrina MikhaylichenkoMichael Ravkin
    • Katrina MikhaylichenkoMichael Ravkin
    • B08B7/00
    • B08B1/04B08B3/08C11D7/06C11D11/0047H01L21/67046Y10S438/906
    • A method for post-etch cleaning of a substrate with MRAM structures and MJT structures and materials is disclosed. The method includes inserting the substrate into a first brush box configured for double-sided mechanical cleaning of the substrate. A non-HF, copper compatible chemistry is introduced into the first brush box for cleaning the active and backside surfaces of the substrate. The substrate is then inserted into a second brush box which is also configured to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate. A burst of chemistry is introduced into the second brush box followed by a DIW rinse. The substrate is then processed through an SRD apparatus for final rinse and dry.
    • 公开了一种使用MRAM结构和MJT结构和材料对衬底进行后蚀刻清洁的方法。 该方法包括将基板插入被配置为用于基板的双面机械清洁的第一刷盒中。 将非HF,铜兼容化学物质引入到第一刷盒中以清洁基底的活性和背面。 然后将衬底插入第二刷盒中,第二刷盒还被配置为提供衬底的活性和背面的双面机械清洁。 将化学爆炸物引入第二刷盒中,然后进行DIW冲洗。 然后将基底通过SRD装置进行处理,以进行最终冲洗和干燥。