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21. 发明申请

US20110186227A1 PLASMA CHAMBER FOR WAFER BEVEL EDGE PROCESSING 有权
标题翻译：用于波浪边缘加工的等离子体室
公开(公告)号：US20110186227A1
公开(公告)日：2011-08-04
申请号：US13084849
申请日：2011-04-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： B08B13/00 , C23F1/08
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在一个示例中，提供了用于晶片斜面边缘清洁的室。该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。还包括围绕绝缘板的顶边电极。绝缘板与底部电极相对。顶边电极电接地并具有向下的L形状。还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。下边缘电极被设置成环绕底部电极。底部边缘电极被定向成与顶部边缘电极的向下的L形相对。

22. 发明申请

US20090166326A1 EDGE ELECTRODES WITH DIELECTRIC COVERS 有权
标题翻译：带电介质盖的边缘电极
公开(公告)号：US20090166326A1
公开(公告)日：2009-07-02
申请号：US11758584
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
IPC分类号： C23F1/00
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括围绕衬底支撑件的底部边缘电极。底部边缘电极和基底支撑件通过底部介电环彼此电隔离。面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。顶边电极电接地。面向衬底的顶边电极的表面被顶部薄介电层覆盖。顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

23. 发明授权

US06518705B2 Method and apparatus for producing uniform process rates 有权
公开(公告)号：US06518705B2
公开(公告)日：2003-02-11
申请号：US10033807
申请日：2001-12-18
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
IPC分类号： H01J724
CPC分类号： H01J37/321 , H01J37/32467
摘要： An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

24. 发明授权

US07540935B2 Plasma oxidation and removal of oxidized material 失效
标题翻译：氧化物质的等离子体氧化和去除
公开(公告)号：US07540935B2
公开(公告)日：2009-06-02
申请号：US11076725
申请日：2005-03-09
申请人： Yunsang Kim , Andrew D. Bailey, III , Hyungsuk Alexander Yoon , Arthur M. Howald
发明人： Yunsang Kim , Andrew D. Bailey, III , Hyungsuk Alexander Yoon , Arthur M. Howald
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32136 , H01L21/31683 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32138 , H01L21/32139 , H01L21/7684 , H01L21/76865 , H01L21/76885
摘要： A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.
摘要翻译：蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。剩余的表面具有小于约10nm的平均表面粗糙度。还公开了用于蚀刻导电层的系统。

25. 发明授权

US08211238B2 System, method and apparatus for self-cleaning dry etch 有权
标题翻译：用于自清洁干蚀刻的系统，方法和设备
公开(公告)号：US08211238B2
公开(公告)日：2012-07-03
申请号：US11444942
申请日：2006-05-31
申请人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
发明人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
IPC分类号： C25F3/12 , B08B9/027
CPC分类号： B08B7/00 , B08B7/0035 , B08B7/0071 , H01J37/3244 , H01J37/32522 , H01J37/32862 , H01J2237/022 , H01L21/3065 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/67069 , H01L21/6708 , H01L21/7684 , Y10S438/905
摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
摘要翻译：一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。第一个温度足以使第一个物质变得挥发。第一种可以是沉积在内表面上的几种物质之一。将清洁化学品注入到处理室中。清洁化学品可以与第二种物质反应以将第二种类转化为第一种。挥发的第一种也可以从处理室输出。还描述了用于清洁处理室的系统。

26. 发明授权

US07140374B2 System, method and apparatus for self-cleaning dry etch 有权
公开(公告)号：US07140374B2
公开(公告)日：2006-11-28
申请号：US10802460
申请日：2004-03-16
申请人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
发明人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
IPC分类号： B08B9/00 , B44C1/22
CPC分类号： B08B7/00 , B08B7/0035 , B08B7/0071 , H01J37/3244 , H01J37/32522 , H01J37/32862 , H01J2237/022 , H01L21/3065 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/67069 , H01L21/6708 , H01L21/7684 , Y10S438/905
摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

27. 发明授权

US09053925B2 Configurable bevel etcher 有权
标题翻译：可配置斜角蚀刻机
公开(公告)号：US09053925B2
公开(公告)日：2015-06-09
申请号：US13081264
申请日：2011-04-06
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
IPC分类号： H01L21/00 , H01L21/02 , H01J37/32 , H01L21/67
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

28. 发明授权

US08852384B2 Method and apparatus for detecting plasma unconfinement 有权
标题翻译：用于检测等离子体无约束的方法和装置
公开(公告)号：US08852384B2
公开(公告)日：2014-10-07
申请号：US13584646
申请日：2012-08-13
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01L21/67 , G01N21/68
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

29. 发明申请

US20140054269A1 PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM. 有权
标题翻译：在等离子体加工系统中进行等离子体增强蚀刻。
公开(公告)号：US20140054269A1
公开(公告)日：2014-02-27
申请号：US13626793
申请日：2012-09-25
申请人： Eric A. Hudson , Andrew D. Bailey, III , Rajinder Dhindsa
发明人： Eric A. Hudson , Andrew D. Bailey, III , Rajinder Dhindsa
IPC分类号： C23F1/00
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32091 , H01J37/321 , H01J37/32192 , H01J37/32357 , H01J37/32449 , H01J37/32458 , H01J37/32715 , H01J2237/334 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069
摘要： Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.
摘要翻译：用于蚀刻具有至少一个初级等离子体产生区域的等离子体处理室中的衬底和通过半屏障结构从所述初级等离子体产生区域分离的次级等离子体产生区域的方法。该方法包括从主要等离子体产生区域中的主进料气体产生主要等离子体。该方法还包括从次级等离子体产生区域中的二次进料气体产生二次等离子体，以使至少一些来自第二等离子体的物质迁移到初级等离子体产生区域。该方法另外包括在初级等离子体已经用来自二次等离子体的迁移物质增强之后用初级等离子体蚀刻基板。

30. 发明授权

US08580078B2 Bevel etcher with vacuum chuck 有权
标题翻译：斜角蚀刻机与真空吸盘
公开(公告)号：US08580078B2
公开(公告)日：2013-11-12
申请号：US11698189
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , William S. Kennedy
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/02087 , H01L21/67069 , H01L21/6838
摘要： A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.
摘要翻译：包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。真空吸盘包括卡盘主体和支撑环。卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。真空泵在运行期间抽空真空区域。真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。压差也产生弯曲力以减小基板的弯曲曲率。

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