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21. 发明申请

WO2022266277A1 METHODS FOR DETECTING ARCING IN POWER DELIVERY SYSTEMS FOR PROCESS CHAMBERS 审中-公开
公开(公告)号：WO2022266277A1
公开(公告)日：2022-12-22
申请号：PCT/US2022/033712
申请日：2022-06-16
申请人： APPLIED MATERIALS, INC.
发明人： GUO, Yue , YANG, Yang , RAMASWAMY, Kartik
IPC分类号： H01J37/32
摘要： Methods for detecting arcs in power delivery systems for plasma process chambers leverage visible arc detection sensors to facilitate in locating the arc and shutting down a power source associated with arc location. In some embodiments, the method includes receiving an arc indication from an arc detection sensor operating in a visible light spectrum where the at least one arc detection sensor is positioned in an assembly of a power delivery system for a plasma process chamber, determining a location of the arc indication by an arc detection controller of the plasma process chamber, and activating a safety interlock signal to the power source of the power delivery system of the plasma process chamber when the at least one arc indication exceeds a threshold value. The safety interlock signal controls a power status of the power source and activating the safety interlock signal removes power source power.

22. 发明申请

WO2021086570A1 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
公开(公告)号：WO2021086570A1
公开(公告)日：2021-05-06
申请号：PCT/US2020/054784
申请日：2020-10-08
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , YANG, Yang , COLLINS, Kenneth , LANE, Steven , MONROY, Gonzalo , GUO, Yue
IPC分类号： H01J37/32 , H01L21/67
摘要： Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

23. 发明申请

WO2021003031A1 METHODS AND APPARATUS FOR CURING DIELECTRIC MATERIAL 审中-公开
公开(公告)号：WO2021003031A1
公开(公告)日：2021-01-07
申请号：PCT/US2020/038718
申请日：2020-06-19
申请人： APPLIED MATERIALS, INC.
发明人： CITLA, Bhargav S. , RUBNITZ, Joshua , TANNOS, Jethro , NEMANI, Srinivas D. , RAMASWAMY, Kartik , YANG, Yang
IPC分类号： H01L21/02 , H01J37/32 , H01L21/67
摘要： Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

24. 发明申请

WO2019212592A1 PULSED PLASMA (DC/RF) DEPOSITION OF HIGH QUALITY C FILMS FOR PATTERNING 审中-公开
公开(公告)号：WO2019212592A1
公开(公告)日：2019-11-07
申请号：PCT/US2018/056004
申请日：2018-10-16
申请人： APPLIED MATERIALS, INC.
发明人： VENKATASUBRAMANIAN, Eswaranand , YANG, Yang , MANNA, Pramit , RAMASWAMY, Kartik , KOSHIZAWA, Takehito , MALLICK, Abhijit Basu
IPC分类号： C23C16/503 , C23C16/505 , C23C16/26 , H01L21/033 , H01L21/02
摘要： Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process, in particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

25. 发明申请

WO2016204860A1 MULTIPLE ELECTRODE SUBSTRATE SUPPORT ASSEMBLY AND PHASE CONTROL SYSTEM 审中-公开
标题翻译：多电极基板支撑组件和相位控制系统
公开(公告)号：WO2016204860A1
公开(公告)日：2016-12-22
申请号：PCT/US2016/028311
申请日：2016-04-19
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , RAMASWAMY, Kartik , LANE, Steven , WONG, Lawrence , RAUF, Shahid , NGUYEN, Andrew , COLLINS, Kenneth S. , LINDLEY, Roger Alan
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： H01J37/32715 , H01J37/32165 , H01J37/32568 , H01J37/3299
摘要： Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.
摘要翻译：本文所述的实施方案提供了能够调整等离子体室内的等离子体的衬底支撑组件。在一个实施例中，提供了一种用于调谐腔室中的等离子体的方法。该方法包括向衬底支撑组件中的第一电极提供第一射频功率和直流电力，在与第一电极不同的位置处向衬底支撑组件中的第二电极提供第二射频功率，监测参数的第一和第二射频功率，并且基于所监视的参数来调整第一和第二射频功率中的一个或两个。

26. 发明申请

WO2014110237A1 INDUCTIVELY COUPLED PLASMA SOURCE 审中-公开
标题翻译：电感耦合等离子体源
公开(公告)号：WO2014110237A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/010843
申请日：2014-01-09
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , RAMASWAMY, Kartik , YANG, Yang , LANE, Steven
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/321 , H01J37/3211
摘要： Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.
摘要翻译：本文提供了等离子体处理方法和装置的实施例。在一些实施例中，电感耦合等离子体装置可以包括底壁，其包括毂和通过电容器联接到毂的环，其中所述毂和环各自是导电的，并且其中所述毂具有与感应耦合等离子体装置的中心轴; 与所述底壁间隔开的顶壁，其中所述顶壁具有与所述中心轴线对准的中心开口，并且其中所述顶壁是导电的; 将所述环电连接到所述顶壁的侧壁; 以及将所述毂电连接到所述顶壁的管，所述管具有与所述中心轴对准的中心开口。

27. 发明申请

WO2023038773A1 METHOD AND APPARATUS FOR DIGITAL CONTROL OF ION ENERGY DISTRIBUTION IN A PLASMA 审中-公开
公开(公告)号：WO2023038773A1
公开(公告)日：2023-03-16
申请号：PCT/US2022/040803
申请日：2022-08-18
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , YANG, Yang , GUO, Yue
IPC分类号： H01J37/32
摘要： Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pseudo-staircase waveform that includes coupling, during a first phase of generating a waveform, a first voltage supply to an output node; coupling, during a second phase of generating the waveform, a first capacitor between the output node and an electrical ground node; and coupling during a third phase of generating the waveform, the first capacitor and a second capacitor in a series path between the output node and the electrical ground node.

28. 发明申请

WO2022265838A1 APPARATUS AND METHOD OF ION CURRENT COMPENSATION 审中-公开
公开(公告)号：WO2022265838A1
公开(公告)日：2022-12-22
申请号：PCT/US2022/031072
申请日：2022-05-26
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , GUO, Yue , RAMASWAMY, Kartik
IPC分类号： H01J37/32
摘要： Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pulsed-voltage waveform that includes coupling a main voltage source to an electrode during a first phase of a process of generating a pulsed-voltage waveform, wherein the electrode is disposed within a processing chamber, coupling a ground node to the electrode during a second phase of the process of generating the pulsed-voltage waveform, coupling a first compensation voltage source to the electrode during a third phase of the process of generating the pulsed-voltage waveform, and coupling a second compensation voltage source to the electrode during a fourth phase of the process of generating the pulsed-voltage waveform.

29. 发明公开

EP3475971A1 DIAMOND LIKE CARBON LAYER FORMED BY AN ELECTRON BEAM PLASMA PROCESS 审中-公开
公开(公告)号：EP3475971A1
公开(公告)日：2019-05-01
申请号：EP17820840.1
申请日：2017-06-01
申请人： Applied Materials, Inc.
发明人： YANG, Yang , CHEN, Lucy , ZHOU, Jie , RAMASWAMY, Kartik , COLLINS, Kenneth S. , NEMANI, Srinivas D. , YING, Chentsau , LIU, Jingjing , LANE, Steven , MONROY, Gonzalo , CARDUCCI, James D.
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/02

30. 发明公开

EP3899615A1 ELECRON BEAM APPARATUS FOR OPTICAL DEVICE FABRICATION 审中-公开
公开(公告)号：EP3899615A1
公开(公告)日：2021-10-27
申请号：EP19900534.9
申请日：2019-12-17
申请人： Applied Materials, Inc.
发明人： RAMASWAMY, Kartik , YANG, Yang , THOTHADRI, Manivannan , CHEN, Chien-An , GODET, Ludovic , MEYER TIMMERMAN THIJSSEN, Rutger
IPC分类号： G02B6/122

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