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21. 发明申请

US20080315089A1 Electron gun, electron beam exposure apparatus, and exposure method 有权
标题翻译：电子枪，电子束曝光装置和曝光方法
公开(公告)号：US20080315089A1
公开(公告)日：2008-12-25
申请号：US12151500
申请日：2008-05-07
申请人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
发明人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
IPC分类号： H01J3/02
CPC分类号： H01J37/073 , H01J2237/06316 , H01J2237/06341 , H01J2237/3175
摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.
摘要翻译：电子枪包括被配置为发射电子的电子源。电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。电子发射限制区域可以被碳覆盖。

22. 发明授权

US06252344B1 Electron gun used in an electron beam exposure apparatus 有权
标题翻译：用于电子束曝光装置的电子枪
公开(公告)号：US06252344B1
公开(公告)日：2001-06-26
申请号：US09335398
申请日：1999-06-17
申请人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
发明人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J2976
CPC分类号： H01J37/241 , H01J2237/3175
摘要： An electron gun, preferably a four-pole electron gun, used in an electron beam exposure apparatus is formed by: a cathode for emitting an electron beam when supplying a negative and high-accelerated voltage; a first grid provided downstream of the cathode for focusing a crossover image of the electron beam when supplying a voltage which becomes a reverse bias for the cathode, and the cathode and the first grid being arranged at a high voltage side of a high voltage insulator; an anode for collecting the electron beam which passes through the first grid, and being arranged at a low voltage side of the high voltage insulator; and a second grid provided at the high voltage side of the high voltage insulator and between the first grid and the anode, and having an aperture for limiting an amount of the electron beam passing therethrough. A voltage which becomes a forward bias for the cathode is supplied to the second grid, and the crossover image is focused at the aperture of the second grid.
摘要翻译：电子束曝光装置中使用的优选四极电子枪的电子枪是通过以下方式形成的：用于在提供负高和高加速电压时发射电子束的阴极; 设置在阴极的下游的第一栅极，用于在提供成为阴极的反向偏压的电压时使聚焦电子束的交叉图像，并且阴极和第一栅极布置在高压绝缘体的高压侧; 用于收集通过第一栅格的电子束并且布置在高压绝缘体的低电压侧的阳极; 以及设置在高压绝缘子的高压侧和第一栅极与阳极之间的第二栅极，并且具有用于限制通过其中的电子束的量的孔。成为阴极的正向偏压的电压被提供给第二栅极，并且交叉图像聚焦在第二栅极的孔径处。

23. 发明授权

US5444257A Electron-beam exposure system for reduced distortion of electron beam spot 失效
标题翻译：电子束曝光系统，减少电子束斑变形
公开(公告)号：US5444257A
公开(公告)日：1995-08-22
申请号：US319022
申请日：1994-10-06
申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
发明人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
IPC分类号： H01L21/027 , H01J37/153 , H01J37/00
CPC分类号： H01J37/153 , H01J2237/1504 , H01J2237/1532 , H01J2237/3175
摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
摘要翻译：电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

24. 发明授权

US07777202B2 Electron beam exposure apparatus involving the position and velocity calculation 有权
标题翻译：涉及位置和速度计算的电子束曝光装置
公开(公告)号：US07777202B2
公开(公告)日：2010-08-17
申请号：US11729673
申请日：2007-03-28
申请人： Takamasa Satoh , Yoshihisa Ooae
发明人： Takamasa Satoh , Yoshihisa Ooae
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2025 , H01J2237/31761
摘要： An electron beam exposure apparatus includes: an electron gun for generating an electron beam; a deflector for deflecting the electron beam; a wafer stage; a stage position detector for detecting a position of the wafer stage; and a stage position computing unit for calculating a movement velocity of the wafer stage. On a basis of the movement velocity, the stage position computing unit calculates an amount of positional change of the wafer stage with respect to an interpolation time, and subsequently calculates an amount of positional movement of the wafer stage by sequentially adding the amount of positional change to the position of the wafer stage in synchronism with the interpolation time. Thus, the stage position computing unit calculates an amount of deflection of the electron beam corresponding to the amount of the positional movement of the wafer stage.
摘要翻译：电子束曝光装置包括：用于产生电子束的电子枪; 用于偏转电子束的偏转器; 晶圆台; 用于检测晶片台的位置的台位置检测器; 以及用于计算晶片台的移动速度的台位置计算单元。基于移动速度，台位置计算单元计算晶片载物台相对于插补时间的位置变化量，并且随后通过依次添加位置变化量来计算晶片台的位置移动量到内插时间同步到晶片台的位置。因此，台位置计算单元计算与晶片台的位置移动量对应的电子束的偏转量。

25. 发明申请

US20080277598A1 Electron beam exposure apparatus 有权
标题翻译：电子束曝光装置
公开(公告)号：US20080277598A1
公开(公告)日：2008-11-13
申请号：US11729673
申请日：2007-03-28
申请人： Takamasa Satoh , Yoshihisa Ooae
发明人： Takamasa Satoh , Yoshihisa Ooae
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2025 , H01J2237/31761
摘要： An electron beam exposure apparatus includes: an electron gun for generating an electron beam; a deflector for deflecting the electron beam; a wafer stage; a stage position detector for detecting a position of the wafer stage; and a stage position computing unit for calculating a movement velocity of the wafer stage. On a basis of the movement velocity, the stage position computing unit calculates an amount of positional change of the wafer stage with respect to an interpolation time, and subsequently calculates an amount of positional movement of the wafer stage by sequentially adding the amount of positional change to the position of the wafer stage in synchronism with the interpolation time. Thus, the stage position computing unit calculates an amount of deflection of the electron beam corresponding to the amount of the positional movement of the wafer stage.
摘要翻译：电子束曝光装置包括：用于产生电子束的电子枪; 用于偏转电子束的偏转器; 晶圆台; 用于检测晶片台的位置的台位置检测器; 以及用于计算晶片台的移动速度的台位置计算单元。基于移动速度，台位置计算单元计算晶片载物台相对于插补时间的位置变化量，并且随后通过依次添加位置变化量来计算晶片台的位置移动量到内插时间同步到晶片台的位置。因此，台位置计算单元计算与晶片台的位置移动量对应的电子束的偏转量。

26. 发明授权

US06727658B2 Electron beam generating apparatus and electron beam exposure apparatus 有权
标题翻译：电子束发生装置和电子束曝光装置
公开(公告)号：US06727658B2
公开(公告)日：2004-04-27
申请号：US10383953
申请日：2003-03-07
申请人： Yoshihisa Ooae , Yoichi Shimizu , Takamasa Satoh , Takeshi Haraguchi
发明人： Yoshihisa Ooae , Yoichi Shimizu , Takamasa Satoh , Takeshi Haraguchi
IPC分类号： G09G310
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/065 , H01J37/3177
摘要： An electron beam generating apparatus for generating a plurality of electron beams, which includes: a plurality of cathodes for generating thermoelectrons; a cathode power supply unit for applying negative voltage to the cathodes so as to emit the thermoelectrons from the cathodes; a plurality of grids, which correspond to the plurality of cathodes respectively, for focusing the thermoelectrons emitted from each of the plurality of cathodes, and shaping the plurality of electron beams; and an insulator on which the plurality of cathodes and the plurality of grids are attached.
摘要翻译：一种用于产生多个电子束的电子束产生装置，包括：多个用于产生热电子的阴极; 用于向阴极施加负电压以从阴极发射热电子的阴极电源单元; 分别对应于多个阴极的多个栅格，用于聚焦从多个阴极中的每一个发射的热电子，并对多个电子束进行成形; 以及绝缘体，多个阴极和多个栅极连接在该绝缘体上。

27. 发明授权

US06188074B1 Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US06188074B1
公开(公告)日：2001-02-13
申请号：US09209377
申请日：1998-12-10
申请人： Takamasa Satoh , Soichiro Arai
发明人： Takamasa Satoh , Soichiro Arai
IPC分类号： H01J37302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174
摘要： A charged particle beam exposure apparatus of the BAA type is disclosed, which improves the transmission rate of at least a signal transmission path leading from a blanking aperture array (BAA) control circuit to at least a blanking electrode and has an increased BAA driving speed. The impedance of the signal transmission path leading from the driver of the BAA control circuit to the BAA electrode is rendered to coincide with the output impedance of the driver of the BAA control circuit. Further, an auxiliary transmission path is provided for leading the signal transmission path inside a column outside of the column, and terminates with a resistor having the same impedance with the transmission impedance, thereby matching the impedance of the signal transmission path.
摘要翻译：公开了一种BAA型的带电粒子束曝光装置，其将至少从消隐孔阵列（BAA）控制电路引导到至少一个消隐电极的信号传输路径的传输速率提高，并且具有增加的BAA驱动速度。从BAA控制电路的驱动器到BAA电极的信号传输路径的阻抗与BAA控制电路的驱动器的输出阻抗一致。此外，提供辅助传输路径用于引导在列外的列内的信号传输路径，并且以与传输阻抗具有相同阻抗的电阻终止，从而匹配信号传输路径的阻抗。

28. 发明授权

US07557357B2 D/A conversion device and method and charged particle beam exposure apparatus and method 失效
标题翻译： D / A转换装置及方法及带电粒子束曝光装置及方法
公开(公告)号：US07557357B2
公开(公告)日：2009-07-07
申请号：US11729898
申请日：2007-03-28
申请人： Takamasa Satoh , Koichi Hidaka , Ryozo Yoshino
发明人： Takamasa Satoh , Koichi Hidaka , Ryozo Yoshino
IPC分类号： H03M1/10
CPC分类号： H03M1/1047 , H01J37/1477 , H01J2237/1504 , H03M1/66
摘要： The present invention is related to a D/A conversion device, it is provided with a first D/A conversion circuit which receives input of digital data composed of plural bits and outputs a corresponding electric output signal, and a second D/A conversion circuit which receives input of a correction code for the digital data and which outputs a corresponding electric correction signal, wherein the first and second D/A conversion circuits are connected to each other at their respective output terminals so that the electric output signal is corrected by the electric correction signal. The D/A conversion device comprises: storing means 105 for storing correction codes each for one bit of the digital data, the correction codes being determined in correlation with the first D/A conversion circuit 11; and calculating means 107 for performing serial entry and addition of the correction codes each for one bit of the digital data, and outputting a correction code for all bits of the digital data.
摘要翻译：本发明涉及一种D / A转换装置，它具有一个第一D / A转换电路，它接收由多个比特组成的数字数据的输入并输出相应的电输出信号，以及一个第二D / A转换电路其接收数字数据的校正码的输入并输出相应的电校正信号，其中第一和第二D / A转换电路在它们各自的输出端彼此连接，使得电输出信号由电校正信号。 D / A转换装置包括：存储装置105，用于存储每个数字数据的一位的校正码，校正码与第一D / A转换电路11相关确定; 以及用于对数字数据的一位执行校正码的串行输入和相加的计算装置107，并输出数字数据的所有比特的校正码。

29. 发明申请

US20080054185A1 D/A conversion device and method and charged particle beam exposure apparatus and method 失效
标题翻译： D / A转换装置及方法及带电粒子束曝光装置及方法
公开(公告)号：US20080054185A1
公开(公告)日：2008-03-06
申请号：US11729898
申请日：2007-03-28
申请人： Takamasa Satoh , Koichi Hidaka , Ryozo Yoshino
发明人： Takamasa Satoh , Koichi Hidaka , Ryozo Yoshino
IPC分类号： H01J3/26 , H03M1/66
CPC分类号： H03M1/1047 , H01J37/1477 , H01J2237/1504 , H03M1/66
摘要： The present invention is related to a D/A conversion device, it is provided with a first D/A conversion circuit which receives input of digital data composed of plural bits and outputs a corresponding electric output signal, and a second D/A conversion circuit which receives input of a correction code for the digital data and which outputs a corresponding electric correction signal, wherein the first and second D/A conversion circuits are connected to each other at their respective output terminals so that the electric output signal is corrected by the electric correction signal. The D/A conversion device comprises: storing means 105 for storing correction codes each for one bit of the digital data, the correction codes being determined in correlation with the first D/A conversion circuit 11; and calculating means 107 for performing serial entry and addition of the correction codes each for one bit of the digital data, and outputting a correction code for all bits of the digital data.
摘要翻译：本发明涉及一种D / A转换装置，它具有一个第一D / A转换电路，它接收由多个比特组成的数字数据的输入并输出相应的电输出信号，以及一个第二D / A转换电路其接收数字数据的校正码的输入并输出相应的电校正信号，其中第一和第二D / A转换电路在它们各自的输出端彼此连接，使得电输出信号由电校正信号。 D / A转换装置包括：存储装置105，用于存储每个数字数据的一位的校正码，校正码与第一D / A转换电路11相关确定; 以及用于对数字数据的一位执行校正码的串行输入和相加的计算装置107，并输出数字数据的所有比特的校正码。

30. 发明授权

US5744810A Method and system for exposing pattern on object by charged particle beam 失效
标题翻译：通过带电粒子束对物体曝光图案的方法和系统
公开(公告)号：US5744810A
公开(公告)日：1998-04-28
申请号：US709815
申请日：1996-09-10
申请人： Takamasa Satoh
发明人： Takamasa Satoh
IPC分类号： G03F7/20 , H01J37/302 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J2237/151 , H01J2237/3175
摘要： A cyclic wave v1 of a cycle T/m, such as a sine wave or a pulse wave, is generated, where T is one exposure period and m is a natural number. For each i=1 to 3, cyclic waves v2 to v4 are generated by delaying the cyclic wave v1 by i(T/4m), amplified and supplied to the electrodes of electrostatic deflectors 40, 50 and 60 in such a way that the electric fields formed at the deflectors 40 and 50 have opposite phases each other. For each electrostatic deflector, the phase difference between the voltage waveforms supplied to adjacent electrodes is T/4m and m may be set freely.
摘要翻译：产生循环T / m的循环波v1，例如正弦波或脉冲波，其中T是一个曝光周期，m是自然数。对于每个i = 1至3，通过将循环波v1延迟i（T / 4m）来产生循环波v2至v4，被放大并提供给静电偏转器40,50和60的电极，使得电在偏转器40和50处形成的场彼此具有相反的相位。对于每个静电偏转器，提供给相邻电极的电压波形之间的相位差为T / 4m，m可以自由设定。

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