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21. 发明专利

JP2003070256A Method and apparatus for operating mos rectifier for alternator 有权
标题翻译：操作MOS整流器的方法和装置
公开(公告)号：JP2003070256A
公开(公告)日：2003-03-07
申请号：JP2001259122
申请日：2001-08-29
申请人： Hitachi Car Eng Co Ltd , Hitachi Ltd , 株式会社日立カーエンジニアリング , 株式会社日立製作所
发明人： IWAMURA MASAHIRO , MORI MUTSUHIRO , KANAZAWA HIROYUKI , MASUMOTO MASATOSHI , HIKITA SAKAE
IPC分类号： H02J7/14 , H02M7/12 , H02M7/219
CPC分类号： Y02T10/92
摘要： PROBLEM TO BE SOLVED: To provide a MOS-type rectifier operating method which has solved problems caused by bidirectional conduction properties inherent in MOSFETs and a recovery current of parasitic diode.
SOLUTION: An operating circuit for the MOSFETs of a MOS rectifier type alternator is comprised of a rectifier input/output voltage taking-in portion, an on/off determining circuit portion, an on/off decision logic circuit portion, an output buffer portion, a diagnosing portion, and others.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种MOS解决方案，其解决了MOSFET中固有的双向导通特性和寄生二极管的恢复电流引起的问题。解决方案：用于MOS整流器型交流发电机的MOSFET的工作电路包括整流器输入/输出电压接收部分，开/关确定电路部分，开/关判定逻辑电路部分，输出缓冲器部分，诊断部分等。

22. 发明专利

JP2013098425A Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：JP2013098425A
公开(公告)日：2013-05-20
申请号：JP2011241405
申请日：2011-11-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HORIUCHI KEISUKE , NISHIHARA ATSUO , MORI MUTSUHIRO , NEMOTO YASUHIRO , AZUMA KATSUNORI
IPC分类号： H01L25/07 , H01L21/60 , H01L25/18 , H02M7/48
CPC分类号： H02M7/003 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05599 , H01L2224/4809 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4846 , H01L2224/48472 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/30107 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： PROBLEM TO BE SOLVED: To enable compact mounting of, for example, 12 arms on a single semiconductor power module, to dispose a DC terminal and an AC terminal on a module end face, and to maintain low inductance of a power circuit.SOLUTION: On one insulation substrate 108, two pairs of upper arms (100, 104 and 102, 106) are disposed on the upper right and left of the insulation substrate, and two pairs of lower arms (101, 105 and 103, 107) are disposed on the lower right and left of the insulation substrate. As wiring patterns on the insulation substrate, the two pairs of upper arms are mounted on a first wiring pattern C01, and the two pairs of lower arms are mounted on a second and a third wiring pattern C02, C02 disposed below the first wiring pattern. The first wiring pattern C01 is extended between the second and third wiring patterns, and to the extended end portion, wiring from a positive electrode terminal T01 is connected. Further, by mounting three insulation substrates 108 juxtaposed in one module, a 12-in-1 module is configured.
摘要翻译：要解决的问题：为了使单个半导体功率模块上的例如12个臂的紧凑安装能够在模块端面上设置DC端子和AC端子，并且保持电力电路的低电感。解决方案：在一个绝缘基板108上，两对上臂（100,104和102,106）设置在绝缘基板的上右上和左侧，以及两对下臂（101,105和103），107）设置在绝缘基板的右下方和左侧。作为绝缘基板上的布线图案，两对上臂安装在第一布线图案C01上，两对下臂安装在设置在第一布线图案下方的第二布线图案C02和第三布线图案C02上。第一布线图案C01在第二布线图案和第三布线图案之间延伸，并且延伸端部连接有来自正极端子T01的布线。此外，通过将三个绝缘基板108安装在一个模块中，配置12合1模块。版权所有（C）2013，JPO＆INPIT

23. 发明专利

JP2012174878A Semiconductor device and apparatus using the same 审中-公开
标题翻译：半导体器件和使用它的设备
公开(公告)号：JP2012174878A
公开(公告)日：2012-09-10
申请号：JP2011035304
申请日：2011-02-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TERAKAWA TAKESHI , MATSUYOSHI SATOSHI , NARITA KAZUTOYO , MORI MUTSUHIRO
IPC分类号： H01L29/868 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/47 , H01L29/861 , H01L29/872 , H02K11/00
CPC分类号： H01L29/872 , H01L24/01 , H01L29/0619 , H01L29/8611 , H01L2924/12036 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve the reliability, and to provide a rotating electrical machine or a vehicle using the semiconductor device.SOLUTION: A semiconductor device has a Schottky junction and a pn junction. The pn junction is formed by a high-concentration P-type diffusion layer 5 and an N-type diffusion layer 4. The Schottky junction is formed by a low-concentration P-type diffusion layer 6 and a metal electrode 7. The breakdown voltage of the pn junction in a rectifying region is lower than that of the Schottky junction and the pn junction in a guard ring portion Z2.
摘要翻译：要解决的问题：提供可以提高可靠性的半导体器件，以及提供使用该半导体器件的旋转电机或车辆。解决方案：半导体器件具有肖特基结和pn结。 pn结由高浓度P型扩散层5和N型扩散层4形成。肖特基结由低浓度P型扩散层6和金属电极7形成。击穿电压在整流区域中的pn结的位置比保护环部分Z2中的肖特基结和pn结的低。版权所有（C）2012，JPO＆INPIT

24. 发明专利

JP2011119416A Semiconductor device and power converter using the same 有权
标题翻译：半导体器件和功率转换器
公开(公告)号：JP2011119416A
公开(公告)日：2011-06-16
申请号：JP2009275047
申请日：2009-12-03
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： WATANABE SATOSHI , MORI MUTSUHIRO , ARAI TAIKA
IPC分类号： H01L29/739 , H01L29/06 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/2815 , H01L29/0607 , H01L29/0611 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0646 , H01L29/0657 , H01L29/0847 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66348 , H01L29/7397
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that improves dv/dt-controllability via a gate drive circuit during turn-on switching while maintaining a low loss and a high breakdown voltage.
SOLUTION: In order to solve the problem, the semiconductor device has such a configuration that a gate electrode 401 is disposed on a sidewall of a wide trench 423. This allows gate parasitic capacitance to be small since the gate electrode 401 is covered with a gate insulating film 402 and a thick insulating film 403 to be an interlayer film, eliminates gate potential fluctuation so as to improve dv/dt-controllability for the absence of a floating p-type layer, and secures the low loss and low noise.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其在导通切换期间通过栅极驱动电路提高dv / dt可控性，同时保持低损耗和高击穿电压。解决方案：为了解决这个问题，半导体器件具有这样的结构，即栅电极401设置在宽沟槽423的侧壁上。这允许栅极寄生电容小，因为栅电极401被覆盖通过栅绝缘膜402和厚绝缘膜403作为层间膜，消除了栅极电位波动，从而提高了不存在浮置p型层的dv / dt可控性，并且确保低损耗和低噪声。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2011015460A Power module and inverter for vehicle using the same 有权
标题翻译：用于车辆的电源模块和逆变器
公开(公告)号：JP2011015460A
公开(公告)日：2011-01-20
申请号：JP2009154528
申请日：2009-06-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： AZUMA KATSUNORI , MORI MUTSUHIRO , HIYOSHI MICHIAKI , HAYAKAWA SEIICHI , SASAKI KOJI , YOSHIDA ISAMU
IPC分类号： H02M7/48 , B60L15/00
CPC分类号： B60L11/04 , B60L2200/26 , H01L24/28 , H01L24/29 , H01L24/48 , H01L25/072 , H01L25/16 , H01L2224/48091 , H01L2224/4847 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2924/3025 , H02M7/003 , H03K17/08148 , H03K2017/0806 , H05K7/1432 , Y02T10/70 , Y02T10/7077 , Y10T307/74 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a low-inductance and compact power module.SOLUTION: In the power module, an upper arm circuit part includes a first connection conductor for supplying a high potential to the arm circuit part from the outside, a second connection conductor for supplying a low potential of a lower arm circuit part from the outside, and a resin case for supporting the first and second connection conductors for insulation on a metal base. The first and second connection conductors are flat, and are insulated by an insulating sheet for lamination. The insulating sheet is exposed from a lamination part sandwiched between the first and second connection conductors at the lamination part, and ensures an insulation creepage distance between the first and second connection conductors. In the resin case, a recess is formed for housing the first and second connection conductors and insulating sheet stacked.
摘要翻译：要解决的问题：提供一种低电感和小型电力模块。解决方案：在功率模块中，上臂电路部分包括用于从外部向臂电路部分提供高电位的第一连接导体，第二连接用于从外部提供下臂电路部分的低电位的导体，以及用于在金属基座上支撑用于绝缘的第一和第二连接导体的树脂壳体。第一和第二连接导体是平的，并且被用于层压的绝缘片绝缘。绝缘片从叠层部分夹在第一和第二连接导体之间的层叠部分露出，确保了第一和第二连接导体之间的绝缘爬电距离。在树脂壳体中，形成用于容纳第一和第二连接导体和堆叠的绝缘片的凹部。

26. 发明专利

JP2010107697A Plasma display device and semiconductor device 审中-公开
标题翻译：等离子体显示器件和半导体器件
公开(公告)号：JP2010107697A
公开(公告)日：2010-05-13
申请号：JP2008279281
申请日：2008-10-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAGASE TAKUO , MORI MUTSUHIRO
IPC分类号： G09G3/288 , G09G3/20 , G09G3/291 , G09G3/292 , G09G3/293 , G09G3/294 , G09G3/296 , G09G3/298
CPC分类号： G09G3/296 , G09G3/2927 , G09G3/293 , G09G3/2942 , G09G2310/0289 , G09G2330/021 , G09G2330/028
摘要： PROBLEM TO BE SOLVED: To reduce the cost of a plasma display device by reducing the size of a chip by decreasing the breakdown voltage of a part of an address driver IC used in one-side driving.
SOLUTION: The plasma display device including a plurality of display cells has: a Y electrode; an X electrode which is connected to a reference potential and carries out maintenance discharge between the adjacent Y electrode and itself; and an address electrode. In the device, the breakdown voltage of a second switching element (Q1) that outputs the high level of the address driver for driving the address electrode is set lower than that of the first switching element (Q2) that outputs a low level. For this reason, a diode (Di) is inserted in between the second switching element (Q1) and the address electrode.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过降低单侧驱动中使用的地址驱动器IC的一部分的击穿电压来减小芯片的尺寸来降低等离子体显示装置的成本。包括多个显示单元的等离子体显示装置具有：Y电极; X电极，其连接到参考电位，并在相邻的Y电极与其本身之间进行维护放电; 和寻址电极。在该装置中，输出用于驱动寻址电极的地址驱动器的高电平的第二开关元件（Q1）的击穿电压被设定为低于输出低电平的第一开关元件（Q2）的击穿电压。为此，在第二开关元件（Q1）和寻址电极之间插入二极管（Di）。版权所有（C）2010，JPO＆INPIT

27. 发明专利

JP2010092056A Pdp display device 审中-公开
标题翻译： PDP显示设备
公开(公告)号：JP2010092056A
公开(公告)日：2010-04-22
申请号：JP2009236800
申请日：2009-10-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OSAWA MICHITAKA , OHIRA HIROSHI , MORI MUTSUHIRO , OTAKA SHIGEO , ISHIZAKA KATSUO
IPC分类号： G09G3/20 , G09G3/288 , G09G3/291 , G09G3/294 , G09G3/296 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/088 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide drive technology with small voltage drop in a conductive state and satisfactory current interrupting characteristics.
SOLUTION: In a PDP (Plasma Display Panel) display device, a high-speed IGBT for sustain circuit is used as an output power element. An influence of a tail current, which is an original defect of the element, is reduced by combining an AC type PDP 15 having voltage and current characteristics in which a discharge current is interrupted independently of applied voltage even if the voltage is applied.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有导通状态的小电压降的驱动技术和令人满意的电流中断特性。解决方案：在PDP（等离子体显示面板）显示装置中，使用用于维持电路的高速IGBT作为输出功率元件。即使施加电压，组合具有电压和电流特性的AC型PDP 15也可以减小作为元件的原始缺陷的尾电流的影响，其中放电电流被独立于施加的电压中断。版权所有（C）2010，JPO＆INPIT

28. 发明专利

JP2010045144A Semiconductor device and power converting device using the same 有权
标题翻译：半导体器件和使用其的功率转换器件
公开(公告)号：JP2010045144A
公开(公告)日：2010-02-25
申请号：JP2008207556
申请日：2008-08-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ARAI TAIKA , MORI MUTSUHIRO
IPC分类号： H01L29/739 , H01L29/78 , H01L29/786
CPC分类号： H01L29/7397 , H01L29/0839 , H01L29/1095
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can secure a low noise characteristic and reduce a loss of a switch without increasing a conduction loss of an IGBT. SOLUTION: The semiconductor device is of a trench-gate type, and drift n - layers 110 are exposed over between floating p layers 126 and a trench gate. Namely, the floating p layers 126 are formed among the drift n - layers 110, and separated from the trench gate. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以确保低噪声特性并减少开关损耗的半导体器件，而不增加IGBT的导通损耗。解决方案：半导体器件是沟槽栅型，并且在浮置p层126和沟槽栅极之间暴露漂移层110。也就是说，浮置p层126形成在漂移n层SP1层110之间，并与沟槽栅极分离。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JP2009020358A Plasma display device and semiconductor device 审中-公开
标题翻译：等离子体显示器件和半导体器件
公开(公告)号：JP2009020358A
公开(公告)日：2009-01-29
申请号：JP2007183533
申请日：2007-07-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAGASE TAKUO , MORI MUTSUHIRO , SAKANO JUNICHI
IPC分类号： G09G3/294 , G09G3/288 , G09G3/291 , G09G3/296 , G09G3/298 , H01J11/22 , H01J11/24 , H01J11/34 , H01J11/38
CPC分类号： G09G3/2965 , G09G3/294 , G09G2320/043 , H01J11/12 , H01J11/38
摘要： PROBLEM TO BE SOLVED: To extend brightness life of a panel during single-sided driving in a plasma display device and a semiconductor device used for the same.
SOLUTION: The plasma display device includes a plurality of display cells and has a first sustain electrode, a second sustain electrode which is connected to a reference potential and which carries out sustain discharge with the first sustain electrode through a discharge space, and an address electrode, wherein electric capacitance between the second sustain electrode and the discharge space is controlled to be larger than electric capacitance between the first sustain electrode and the discharge space.
COPYRIGHT: (C)2009,JPO&INPIT

30. 发明专利

JP2008270378A Manufacturing method for semiconductor device, semiconductor device using the same and power converter 有权
标题翻译：半导体器件的制造方法，使用其的功率转换器的半导体器件
公开(公告)号：JP2008270378A
公开(公告)日：2008-11-06
申请号：JP2007108803
申请日：2007-04-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SAKANO JUNICHI , HARA KENJI , SHIRAKAWA SHINJI , ARAI TAIKA , MORI MUTSUHIRO
IPC分类号： H01L29/786 , H01L21/8234 , H01L27/06 , H01L27/08
CPC分类号： H01L29/7394 , H01L29/0878 , H01L29/66325 , H01L29/66681 , H01L29/7824
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device preventing an increase in the size of the semiconductor device due to the dispersion of a semiconductor wafer, being a smaller type and having a high performance and a power converter using the semiconductor device.
SOLUTION: In a manufacturing method for the SOI type high withstand voltage semiconductor device formed on a supporting board through an insulating film, impurities are introduced to the whole surface of the board by an ion implantation method and a drift layer is formed to an SOI board having a p-type or n-type impurity concentration of 2E14 cm
-3 or less as an active layer for the semiconductor device. Consequently, the small-sized semiconductor device having a small withstand voltage dispersion is manufactured.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其防止由于半导体晶片的分散而导致的半导体器件的尺寸的增加，该半导体晶片是较小的类型并且具有高性能，并且使用该半导体器件的功率转换器。解决方案：在通过绝缘膜形成在支撑板上的SOI型高耐受电压半导体器件的制造方法中，通过离子注入法将杂质引入到整个板的整个表面，并且形成漂移层作为半导体器件的有源层，具有2E14cm 3以上的p型或n型杂质浓度的SOI板。因此，制造具有小的耐电压色散的小型半导体器件。版权所有（C）2009，JPO＆INPIT

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