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21. 发明授权

US4812894A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4812894A
公开(公告)日：1989-03-14
申请号：US191761
申请日：1988-05-03
申请人： Tohru Nakamura , Kazuo Nakazato , Noriyuki Homma , Kazuhiko Sagara , Takeo Shiba , Tokuo Kure , Tetsuya Hayashida
发明人： Tohru Nakamura , Kazuo Nakazato , Noriyuki Homma , Kazuhiko Sagara , Takeo Shiba , Tokuo Kure , Tetsuya Hayashida
IPC分类号： H01L29/73 , H01L21/331 , H01L21/337 , H01L21/822 , H01L23/485 , H01L27/04 , H01L27/06 , H01L29/08 , H01L29/10 , H01L29/41 , H01L29/417 , H01L29/423 , H01L29/732 , H01L29/808 , H01L29/06
CPC分类号： H01L29/66272 , H01L23/485 , H01L27/0658 , H01L29/0804 , H01L29/0808 , H01L29/1004 , H01L29/41 , H01L29/41708 , H01L29/42304 , H01L29/42316 , H01L29/8083 , H01L2924/0002
摘要： A semiconductor device includes a first insulation film formed on a monocrystalline substrate and having an opening, a monocrystalline semiconductor layer formed so as to protrude into the first insulation film, and a conductive layer formed in contact with the side section of the monocrystalline semiconductor layer and extending over a second insulation film formed on the monocrystalline semiconductor layer.
摘要翻译：半导体器件包括形成在单晶衬底上并具有开口的第一绝缘膜，形成为突出到第一绝缘膜中的单晶半导体层和与单晶半导体层的侧部接触形成的导电层，以及在形成在单晶半导体层上的第二绝缘膜上延伸。

22. 发明授权

US08013327B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US08013327B2
公开(公告)日：2011-09-06
申请号：US12385937
申请日：2009-04-24
申请人： Masahiro Kawasaki , Masaaki Fujimori , Takeo Shiba , Shuji Imazeki , Tadashi Arai
发明人： Masahiro Kawasaki , Masaaki Fujimori , Takeo Shiba , Shuji Imazeki , Tadashi Arai
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00 , H01L27/12 , H01L29/66
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/055
摘要： A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.
摘要翻译：薄膜晶体管包括绝缘基板，源电极和漏电极，设置在绝缘基板的顶部上，分别与源极电连接的半导体层和漏极电极形成的栅极电介质膜至少在半导体层的顶部; 以及设置在栅极电介质膜的顶部上以与半导体层重叠的栅电极。此外，形成第一堤绝缘体以覆盖源电极，形成第二堤绝缘体以覆盖漏电极，并且半导体层，栅极电介质膜和栅极电极嵌入在第一银行绝缘子和第二银行绝缘子。

23. 发明授权

US08008654B2 Thin-film transistor device and a method for manufacturing the same 有权
标题翻译：薄膜晶体管器件及其制造方法
公开(公告)号：US08008654B2
公开(公告)日：2011-08-30
申请号：US12155801
申请日：2008-06-10
申请人： Takeo Shiba , Tomihiro Hashizume , Yuji Suwa , Tadashi Arai
发明人： Takeo Shiba , Tomihiro Hashizume , Yuji Suwa , Tadashi Arai
IPC分类号： H01L51/00
CPC分类号： H01L51/0012 , H01L27/283 , H01L51/0004 , H01L51/0022 , H01L51/0545 , H01L51/0558 , H01L51/105
摘要： A method of manufacturing a thin-film transistor device improves performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device, and reduces power consumption manufacturing cost. Electrodes forming n-type and p-type TFTs and an organic semiconductor are made of the same material in both types of TFT by a solution-process and/or printable process method. A first polarizable thin-film is formed on an interface between a gate insulator and a semiconductor, and a second polarizable thin film provided on an interface between source and drain electrodes and the semiconductor film. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films.
摘要翻译：薄膜晶体管器件的制造方法提高了结合在薄型和轻型图像显示器件或柔性电子器件中的互补TFT电路的性能，并降低了功耗制造成本。形成n型和p型TFT的电极和有机半导体通过溶液处理和/或可印刷的方法在两种类型的TFT中由相同的材料制成。第一可极化薄膜形成在栅极绝缘体和半导体之间的界面上，第二可极化薄膜设置在源电极和漏电极与半导体膜之间的界面上。通过将n型TFT区域或p型TFT区域选择性地暴露于光以从第一和第二可极化薄膜去除偏振功能来制造互补薄膜晶体管器件。

24. 发明授权

US07989143B2 Method of manufacturing a semiconductor device having an organic thin film transistor 有权
标题翻译：制造具有有机薄膜晶体管的半导体器件的方法
公开(公告)号：US07989143B2
公开(公告)日：2011-08-02
申请号：US11752340
申请日：2007-05-23
申请人： Tadashi Arai , Takeo Shiba , Masahiko Ando , Kazuyoshi Torii
发明人： Tadashi Arai , Takeo Shiba , Masahiko Ando , Kazuyoshi Torii
IPC分类号： G03F7/26
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0022 , H01L51/0545
摘要： An electrode substrate in which a lower electrode and an upper electrode are well positioned by way of an insulating film could not be formed by a printing method since positional displacement is caused. The cost was increased outstandingly when using photomasks for positioning. In the present invention, positional displacement does not occur even when using the printing method since the upper electrode and the lower electrode are positioned in self-alignment. Accordingly, a semiconductor device such as a flexible substrate using an organic semiconductor can be formed with low cost by using the printing method.
摘要翻译：由于位置偏移，不能通过印刷方法形成下电极和上电极通过绝缘膜良好定位的电极基板。当使用光掩模进行定位时，成本显着增加。在本发明中，由于上电极和下电极位于自对准位置，即使使用印刷方法也不会发生位置偏移。因此，可以通过使用印刷方法以低成本形成诸如使用有机半导体的柔性基板的半导体器件。

25. 发明授权

US07939826B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07939826B2
公开(公告)日：2011-05-10
申请号：US12258738
申请日：2008-10-27
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜110％的范围内。

26. 发明授权

US07868323B2 Thin film transistor device, image display device and manufacturing method thereof 有权
标题翻译：薄膜晶体管器件，图像显示器件及其制造方法
公开(公告)号：US07868323B2
公开(公告)日：2011-01-11
申请号：US11953065
申请日：2007-12-09
申请人： Takeo Shiba , Masahiko Ando , Masahiro Kawasaki , Masaaki Fujimori
发明人： Takeo Shiba , Masahiko Ando , Masahiro Kawasaki , Masaaki Fujimori
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L27/286 , G02F1/13454 , G09G3/3225 , G09G2300/0426 , G09G2380/02 , H01L27/283 , H01L27/3274 , H01L27/3276 , H01L51/0545 , H01L2251/5338
摘要： In an image display device comprising a display part configured with a plurality of pixels and a peripheral integrated circuit which controls the display part, the display device is provided on a support substrate which has high durability for the impact and the bending, the pixel circuit is configured with an organic semiconductor TFT, the peripheral integrated circuit is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit is provided on a support substrate of the display device being removed the support substrate when being manufactured, and the pixel circuit and the peripheral integrated circuit are connected with the same wire layer.
摘要翻译：在包括配置有多个像素的显示部分和控制显示部分的外围集成电路的图像显示装置中，显示装置设置在对冲击和弯曲具有高耐久性的支撑基板上，像素电路为配置有机半导体TFT的外围集成电路配置有低温多晶硅TFT，该外围集成电路设置在显示装置的支撑基板上，在制造时取出支撑基板，像素电路并且外围集成电路与相同的导线层连接。

27. 发明授权

US07442958B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07442958B2
公开(公告)日：2008-10-28
申请号：US11768588
申请日：2007-06-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/76
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

28. 发明申请

US20080087883A1 Organic Transistor Using Self-Assembled Monolayer 有权
标题翻译：有机晶体管使用自组装单层
公开(公告)号：US20080087883A1
公开(公告)日：2008-04-17
申请号：US11865769
申请日：2007-10-02
申请人： YUJI SUWA , Tomihiro Hashizume , Masahiko Ando , Takeo Shiba
发明人： YUJI SUWA , Tomihiro Hashizume , Masahiko Ando , Takeo Shiba
IPC分类号： H01L51/10 , H01L51/30
CPC分类号： H01L51/105 , H01L51/0545
摘要： Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.
摘要翻译：公开了一种在有机半导体的p型操作时廉价地降低电极和有机半导体之间的接触电阻的方法; 以及作为n型半导体廉价地操作有可能用作p型半导体的有机半导体的方法。此外，还公开了可以廉价制造的p型FET，n沟道FET和C-TFT。具体地说，在一个衬底上廉价地制备p型区域和n型区域，通过在p沟道FET区域和n沟道FET区域中配置可能作为p型半导体的有机半导体，一个C-TFT; 并且在n沟道FET区域中的电极和有机半导体之间布置自组装单层，该自组装单层能够使有机半导体作为n型半导体工作。

29. 发明申请

US20070291325A1 Combined Image Pickup-Display Device 审中-公开
标题翻译：组合图像拾取显示设备
公开(公告)号：US20070291325A1
公开(公告)日：2007-12-20
申请号：US11578543
申请日：2004-04-19
申请人： Yoshiaki Toyota , Naohiro Furukawa , Hisashi Ikeda , Takeo Shiba , Mieko Matsumura
发明人： Yoshiaki Toyota , Naohiro Furukawa , Hisashi Ikeda , Takeo Shiba , Mieko Matsumura
IPC分类号： H04N1/04
CPC分类号： H04N5/335 , G06F3/0412 , H01L27/14643 , H01L27/14678 , H01L27/14692 , H01L27/3234 , H01L27/3272 , H01L2251/5323 , H04N1/00392 , H04N1/00411 , H04N1/0461 , H04N1/195
摘要： An image display device according to the present invention is disclosed wherein a display function is added to an area sensor in which an optical sensor (constituted by a thin film light sensing diode) and a TFT are disposed in two dimensions on a transparent substrate to form a read function. Pixels each having a read function are each provided with a light transmitting area, and the thin film light sensing diodes and the TFTs are each formed using a substantially transparent material, so that the device itself is transparent. Therefore, a user can directly see the contents of a printed matter while the area sensor is placed on the printed matter. Further, an image can be read by, for example, designating the image required for the user from above the device. Consequently, it is possible to decrease the power consumption of the device.
摘要翻译：公开了一种根据本发明的图像显示装置，其中将显示功能添加到其中在透明基板上将二维光学传感器（由薄膜光感测二极管构成）和TFT设置在其中的区域传感器中，以形成一个读功能。每个具有读取功能的像素均设置有透光区域，并且薄膜光感测二极管和TFT均使用基本上透明的材料形成，使得该器件本身是透明的。因此，当区域传感器被放置在印刷物上时，用户可以直接看到印刷品的内容。此外，可以通过例如从设备上方指定用户所需的图像来读取图像。因此，可以降低设备的功耗。

30. 发明授权

US07256423B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07256423B2
公开(公告)日：2007-08-14
申请号：US11186907
申请日：2005-07-22
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
摘要翻译：一种薄膜半导体器件，其包括绝缘衬底，形成在衬底上的半导体多晶体薄膜和具有薄膜作为沟道的晶体管。多晶体包括多个晶粒，晶粒之间的晶界是凹陷的。具有凹陷表面的晶界是通道内所有晶界的最主要的。利用该结构，多晶体可以是能够在150℃以下的温度下形成的低温多晶体，从而实现具有高载流子迁移率的低成本器件。

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