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1. 发明申请

US20090294852A1 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US20090294852A1
公开(公告)日：2009-12-03
申请号：US12385937
申请日：2009-04-24
申请人： Masahiro Kawasaki , Masaaki Fujimori , Takeo Shiba , Shuji Imazeki , Tadashi Arai
发明人： Masahiro Kawasaki , Masaaki Fujimori , Takeo Shiba , Shuji Imazeki , Tadashi Arai
IPC分类号： H01L29/786
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/055
摘要： A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.
摘要翻译：薄膜晶体管包括绝缘基板，源电极和漏电极，设置在绝缘基板的顶部上，分别与源极电连接的半导体层和漏极电极形成的栅极电介质膜至少在半导体层的顶部; 以及设置在栅极电介质膜的顶部上以与半导体层重叠的栅电极。此外，形成第一堤绝缘体以覆盖源电极，形成第二堤绝缘体以覆盖漏电极，并且半导体层，栅极电介质膜和栅极电极嵌入在第一银行绝缘子和第二银行绝缘子。

2. 发明授权

US08013327B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US08013327B2
公开(公告)日：2011-09-06
申请号：US12385937
申请日：2009-04-24
申请人： Masahiro Kawasaki , Masaaki Fujimori , Takeo Shiba , Shuji Imazeki , Tadashi Arai
发明人： Masahiro Kawasaki , Masaaki Fujimori , Takeo Shiba , Shuji Imazeki , Tadashi Arai
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00 , H01L27/12 , H01L29/66
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/055
摘要： A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.
摘要翻译：薄膜晶体管包括绝缘基板，源电极和漏电极，设置在绝缘基板的顶部上，分别与源极电连接的半导体层和漏极电极形成的栅极电介质膜至少在半导体层的顶部; 以及设置在栅极电介质膜的顶部上以与半导体层重叠的栅电极。此外，形成第一堤绝缘体以覆盖源电极，形成第二堤绝缘体以覆盖漏电极，并且半导体层，栅极电介质膜和栅极电极嵌入在第一银行绝缘子和第二银行绝缘子。

3. 发明申请

US20080036698A1 Display 审中-公开
标题翻译：显示
公开(公告)号：US20080036698A1
公开(公告)日：2008-02-14
申请号：US11834736
申请日：2007-08-07
申请人： Masahiro Kawasaki , Masahiko Ando , Takeo Shiba , Shuji Imazeki , Masaaki Fujimori , Hideyuki Matsuoka
发明人： Masahiro Kawasaki , Masahiko Ando , Takeo Shiba , Shuji Imazeki , Masaaki Fujimori , Hideyuki Matsuoka
IPC分类号： G09G3/20
CPC分类号： G02F1/1368 , G09G3/20 , G09G2300/04 , H01L27/124 , H01L27/1292
摘要： A display arranged with, in a matrix way, signal lines for providing brightness information to each of pixels, and scanning lines for selecting, in a predetermined cycle, pixels to be provided with brightness information; intake of the brightness information to each of the pixels being executed by intake of signal voltage of the signal lines via thin-film transistors in each of said pixels, in selecting the scanning lines connected with each of the pixels; and having pixels of n-lines and m-rows, by which the brightness information taken into each of the pixels is retained by capacity thereof, even after the scanning lines connected with each of the pixels become a non-selection state, wherein each of the pixels of each line is provided with at least one semiconductor layer that is common between each of the pixels, and the semiconductor layer is formed in parallel to said signal lines.
摘要翻译：以矩阵方式布置用于向每个像素提供亮度信息的信号线和用于在预定周期中选择要提供亮度信息的像素的扫描线的显示器; 在选择与每个像素连接的扫描线时，通过每个所述像素中的薄膜晶体管吸收信号线的信号电压来执行每个像素的亮度信息的摄取; 并且即使在与每个像素连接的扫描线变为非选择状态之后，具有n行和m行的像素，由此通过其像素保留每个像素中的亮度信息，每行的像素设置有至少一个在每个像素之间共有的半导体层，并且半导体层与所述信号线并联形成。

4. 发明申请

US20070058101A1 Liquid crystal display device 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20070058101A1
公开(公告)日：2007-03-15
申请号：US11510561
申请日：2006-08-28
申请人： Masahiro Kawasaki , Takeo Shiba , Shuji Imazeki , Masahiko Ando
发明人： Masahiro Kawasaki , Takeo Shiba , Shuji Imazeki , Masahiko Ando
IPC分类号： G02F1/136 , G02F1/1337
CPC分类号： G02F1/1368 , G02F1/133723 , G02F1/133784 , G02F2202/02
摘要： It is an object of the present invention to prevent degradation of an organic semiconductor film caused in forming an alignment layer and to inexpensively provide a liquid crystal display device with a high-performance organic thin film transistor. According to the invention, in a liquid crystal display device that includes: a thin film transistor substrate having such members as a thin film transistor composed of a gate electrode, a gate insulating film, source/drain electrodes, and a semiconductor layer, a line, and a pixel electrode; and an opposing substrate supporting a liquid crystal layer between the thin film transistor substrate and the opposing substrate, no alignment layer having a function of controlling alignment of molecules in the liquid crystal layer is interposed between the semiconductor layer and the liquid crystal layer.
摘要翻译：本发明的目的是防止在形成取向层时引起的有机半导体膜的劣化，并且廉价地提供具有高性能有机薄膜晶体管的液晶显示装置。根据本发明，在液晶显示装置中，包括：薄膜晶体管基板，其具有由栅电极，栅绝缘膜，源/漏电极和半导体层组成的薄膜晶体管的构件，线，和像素电极; 以及在薄膜晶体管基板和对置基板之间支撑液晶层的相对基板，在半导体层和液晶层之间插入不具有控制液晶层中的分子取向功能的取向层。

5. 发明授权

US07081641B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07081641B2
公开(公告)日：2006-07-25
申请号：US10786097
申请日：2004-02-26
申请人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
发明人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/0037 , H01L51/0052 , H01L51/0516
摘要： An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
摘要翻译：本发明的目的是通过使用底接触型有机TFT作为开关元件，以低成本提供诸如显示装置，ID标签，传感器等的半导体器件。在本发明中，底部接触型有机TFT的半导体层由多晶材料形成，TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子在源极和漏极上生长的半导体晶体的尺寸。或者，底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。或者，在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层，其厚度不大于并且不小于1。

6. 发明申请

US20100090220A1 THIN FILM TRANSISTOR AND SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：薄膜晶体管和使用其的半导体器件
公开(公告)号：US20100090220A1
公开(公告)日：2010-04-15
申请号：US12638414
申请日：2009-12-15
申请人： Masahiro KAWASAKI , Shuji Imazeki , Masahiko Ando , Yoshifumi Sekiguchi , Shoichi Hirota
发明人： Masahiro KAWASAKI , Shuji Imazeki , Masahiko Ando , Yoshifumi Sekiguchi , Shoichi Hirota
IPC分类号： H01L29/786
CPC分类号： H01L51/107 , H01L51/0541 , H01L51/0545
摘要： The present invention aims at providing a high-performance semiconductor device such as display, IC tag, sensor or the like at a low cost by using an organic thin film transistor most members of which can be formed by printing, as a switching element. The present invention relates to a thin film transistor composed of members on a dielectric substrate, which are a gate electrode, a dielectric film, source/drain electrodes, and a semiconductor layer, wherein on said semiconductor layer there are formed at least two passivation films of a first passivation film capping said semiconductor layer to protect it and a second passivation film covering larger area than that of said first passivation film to protect all of said members.
摘要翻译：本发明旨在通过使用其可以通过印刷形成的大多数成分的有机薄膜晶体作为开关元件，以低成本提供诸如显示器，IC标签，传感器等的高性能半导体器件。本发明涉及一种薄膜晶体管，它由电介质基片上的构成栅电极，电介质膜，源/漏电极和半导体层构成，其中在所述半导体层上形成至少两个钝化膜覆盖所述半导体层以保护其的第一钝化膜和覆盖比所述第一钝化膜的面积更大的区域的第二钝化膜以保护所有所述构件。

7. 发明申请

US20050211975A1 Thin film transistor and semiconductor device using the same 审中-公开
标题翻译：薄膜晶体管和使用其的半导体器件
公开(公告)号：US20050211975A1
公开(公告)日：2005-09-29
申请号：US11057835
申请日：2005-02-15
申请人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando , Yoshifumi Sekiguchi , Shoichi Hirota
发明人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando , Yoshifumi Sekiguchi , Shoichi Hirota
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/84 , H01L27/00 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/50 , H05B33/14
CPC分类号： H01L51/107 , H01L51/0541 , H01L51/0545
摘要： The present invention aims at providing a high-performance semiconductor device such as display, IC tag, sensor or the like at a low cost by using an organic thin film transistor most members of which can be formed by printing, as a switching element. The present invention relates to a thin film transistor composed of members on a dielectric substrate, which are a gate electrode, a dielectric film, source/drain electrodes, and a semiconductor layer, wherein on said semiconductor layer there are formed at least two passivation films of a first passivation film capping said semiconductor layer to protect it and a second passivation film covering larger area than that of said first passivation film to protect all of said members.
摘要翻译：本发明旨在通过使用其可以通过印刷形成的大多数成分的有机薄膜晶体作为开关元件，以低成本提供诸如显示器，IC标签，传感器等的高性能半导体器件。本发明涉及一种薄膜晶体管，它由电介质基片上的构成栅电极，电介质膜，源/漏电极和半导体层构成，其中在所述半导体层上形成至少两个钝化膜覆盖所述半导体层以保护其的第一钝化膜和覆盖比所述第一钝化膜的面积更大的区域的第二钝化膜以保护所有所述构件。

8. 发明申请

US20050056897A1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050056897A1
公开(公告)日：2005-03-17
申请号：US10786097
申请日：2004-02-26
申请人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
发明人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
IPC分类号： H01L51/05 , H01L23/62 , H01L29/786 , H01L51/00 , H01L51/30
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/0037 , H01L51/0052 , H01L51/0516
摘要： An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
摘要翻译：本发明的目的是通过使用底接触型有机TFT作为开关元件，以低成本提供诸如显示装置，ID标签，传感器等的半导体器件。在本发明中，底部接触型有机TFT的半导体层由多晶材料形成，TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子在源极和漏极上生长的半导体晶体的尺寸。或者，底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。或者，在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层，其厚度不大于并且不小于1。

9. 发明申请

US20080012013A1 PATTERN MANUFACTURING EQUIPMENTS, ORGANIC THIN-FILM TRANSISTORS AND MANUFACTURING METHODS FOR ORGANIC THIN-FILM TRANSISTOR 有权
标题翻译：图案制造设备，有机薄膜晶体管和有机薄膜晶体管的制造方法
公开(公告)号：US20080012013A1
公开(公告)日：2008-01-17
申请号：US11775896
申请日：2007-07-11
申请人： Tomohiro Inoue , Masahiko Ando , Shuji Imazeki
发明人： Tomohiro Inoue , Masahiko Ando , Shuji Imazeki
IPC分类号： H01L51/00 , B05C11/00 , H01L51/40
CPC分类号： H01L51/0012 , H01L27/283 , H01L51/0545 , Y10S438/907 , Y10S438/908 , Y10S438/909 , Y10S438/913 , Y10T403/60
摘要： A liquid film applicator means can apply a photosensitive lyophobic film 18 to a substrate 16. An exposure unit 10 is placed on the back side of the substrate and forms the lyophobic film applied on the substrate into a pattern in alignment with gate electrodes 13. A dropping unit 55 drops a test liquid to a surface of the substrate having a pattern of the lyophobic film formed by the exposure means. A measuring means 58 detects the droplet dropped by the dropping unit. A determining means determines whether the pattern of the lyophobic film formed by the exposure means is proper or not based on the droplet detected by the detecting means.
摘要翻译：液膜施加装置可以将光敏疏油膜18施加到基板16上。曝光单元10放置在基板的背面，并且将施加在基板上的疏液膜形成与栅电极13对准的图案。滴下单元55将测试液体滴落到具有由曝光装置形成的疏液膜的图案的基板的表面上。测量装置58检测由滴液装置滴下的液滴。确定装置基于由检测装置检测到的液滴，确定由曝光装置形成的疏液膜的图案是否适当。

10. 发明授权

US5835305A Magnetic disk apparatus employing liquid bearing type or physical contact type magnetic head slider 失效
标题翻译：采用液体轴承型或物理接触式磁头滑块的磁盘装置
公开(公告)号：US5835305A
公开(公告)日：1998-11-10
申请号：US353983
申请日：1994-12-06
申请人： Tetsuya Hamaguchi , Yoshihiro Shiroishi , Yukio Kato , Masaaki Matsumoto , Hiromitsu Tokisue , Takayuki Nakakawaji , Shuji Imazeki
发明人： Tetsuya Hamaguchi , Yoshihiro Shiroishi , Yukio Kato , Masaaki Matsumoto , Hiromitsu Tokisue , Takayuki Nakakawaji , Shuji Imazeki
IPC分类号： G11B5/60 , G11B5/58
CPC分类号： G11B5/581
摘要： A magnetic storage apparatus includes a substantially non-flexible magnetic recording medium, a magnetic head slider having a reading/writing element mounted therein and liquid lubricant provided on the surface of the magnetic recording medium. The liquid lubricant is a liquid in a Newtonian range having a viscosity which is substantially constant irrespective of a shear rate or a liquid having the property that the actual viscosity is increased with increase of the shear rate. The magnetic head slider maintains a gap between the slider and the magnetic recording medium to perform reading and writing while being moved on the liquid lubricant intermittently or continuously in a contact manner with the liquid lubricant. There is provided a device for maintaining a constant flying height even if a movement speed is varied, which flying height is represented by the size of the gap. Thus, the magnetic storage apparatus of the liquid bearing system or the contact system has only very small forces such as liquid drag force and friction force or sticking force and is capable of performing stable slider movement, performing high-speed seeking operation with high reliability and performing high-density recording.
摘要翻译：磁性存储装置包括基本上非柔性的磁记录介质，具有安装在其中的读/写元件的磁头滑块和设置在磁记录介质表面上的液体润滑剂。液体润滑剂是牛顿范围内的液体，其粘度基本上恒定，与剪切速率无关，或液体具有实际粘度随着剪切速率的增加而增加的性质。磁头滑动器在滑动器和磁记录介质之间保持间隙，以便以与液体润滑剂接触的方式间歇地或连续地在液体润滑剂上移动来进行读写。提供了一种用于保持恒定飞行高度的装置，即使移动速度变化，飞行高度由间隙的大小表示。因此，液体轴承系统或接触系统的磁存储装置仅具有非常小的力，例如液体拖曳力和摩擦力或粘着力，并且能够执行稳定的滑块移动，以高可靠性执行高速寻找操作，执行高密度录音。

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