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21. 发明授权

US08067838B2 Semiconductor device having pad structure for preventing and buffering stress of silicon nitride film 有权
标题翻译：具有用于防止和缓冲氮化硅膜的应力的衬垫结构的半导体器件
公开(公告)号：US08067838B2
公开(公告)日：2011-11-29
申请号：US11831595
申请日：2007-07-31
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L23/522
CPC分类号： H01L24/05 , H01L23/562 , H01L2224/0569 , H01L2924/01004 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01059 , H01L2924/01079 , H01L2924/05042 , H01L2924/30105 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device having a pad structure for preventing a stress of a silicon nitride film. The semiconductor device includes a semiconductor substrate, a lower structure formed on the semiconductor substrate, a first insulation film formed on the lower structure, a first metal layer coupled to the lower structure through a first metal contact in the first insulation film, a second metal layer formed on the first metal layer, and a plurality of dummy gates having a concentric square structure formed at the lower portion of the pad region on the second metal layer.
摘要翻译：一种具有用于防止氮化硅膜的应力的焊盘结构的半导体器件。半导体器件包括半导体衬底，形成在半导体衬底上的下部结构，形成在下部结构上的第一绝缘膜，通过第一绝缘膜中的第一金属接触耦合到下部结构的第一金属层，第二金属形成在第一金属层上的多层虚拟栅极和形成在第二金属层上的焊盘区域的下部的同心方形结构的多个虚拟栅极。

22. 发明申请

US20100291750A1 METHOD OF FABRICATING FLASH MEMORY DEVICE 有权
标题翻译：制造闪存存储器件的方法
公开(公告)号：US20100291750A1
公开(公告)日：2010-11-18
申请号：US12781777
申请日：2010-05-17
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L21/762
CPC分类号： H01L27/105 , G11C16/0408 , H01L27/11526 , H01L27/11531
摘要： A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third, and fourth sides. A first decoder is defined within the peripheral region and provided adjacent to the first side of the cell array. A first isolation structure is formed at a first boundary region provided between the first side of the cell array and the peripheral region. A first active region is formed at a second boundary region that is provided between the second side of the cell array and the peripheral region. The first isolation structure has a first portion that has a first depth and a second portion that has a second depth.
摘要翻译：半导体器件包括具有单元区域和周边区域的半导体衬底。单元阵列定义在单元区域内，单元阵列具有第一，第二，第三和第四面。第一解码器被限定在外围区域内并且被提供为与单元阵列的第一侧相邻。在设置在电池阵列的第一侧和周边区域之间的第一边界区域处形成第一隔离结构。第一有源区形成在设置在电池阵列的第二侧和周边区域之间的第二边界区域。第一隔离结构具有具有第一深度的第一部分和具有第二深度的第二部分。

23. 发明授权

US07705395B2 Flash memory cell and method of manufacturing the same and programming/erasing reading method of flash memory cell 失效
标题翻译：闪存单元及其制造方法和闪存单元的编程/擦除读取方法
公开(公告)号：US07705395B2
公开(公告)日：2010-04-27
申请号：US12247305
申请日：2008-10-08
申请人： Sung Kee Park , Young Seon You , Yong Wook Kim , Yoo Nam Jeon
发明人： Sung Kee Park , Young Seon You , Yong Wook Kim , Yoo Nam Jeon
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/0458 , G11C2211/5612 , H01L27/115 , H01L29/7887
摘要： Disclosed is a flash memory cell and method of manufacturing the same, and programming/erasing/reading method thereof. The flash memory cell comprises a first tunnel oxide film formed at a given region of a semiconductor substrate, a first floating gate formed on the first tunnel oxide film, a second tunnel oxide film formed over the semiconductor substrate and along one sidewall of the first floating gate, a second floating gate isolated from the first floating gate while contacting the second tunnel oxide film, a dielectric film formed on the first floating gate and the second floating gate, a control gate formed on the dielectric film, a first junction region formed in the semiconductor substrate below one side of the second tunnel oxide film, and a second junction region formed in the semiconductor substrate below one side of the first tunnel oxide film. Therefore, the present invention can implement 2-bit cell or 3-bit cell of a high density using the existing process technology. Further, it can reduce the manufacture cost and implement a high-integrated flash memory cell that is advantageous than a conventional flash memory cell in view of charge storage/retention as well as programming time.
摘要翻译：公开了一种闪存单元及其制造方法及其编程/擦除/读取方法。闪速存储单元包括形成在半导体衬底的给定区域的第一隧道氧化物膜，形成在第一隧道氧化物膜上的第一浮栅，形成在半导体衬底上并沿着第一浮置区的一个侧壁的第二隧道氧化膜栅极，与第一沟槽氧化膜接触时与第一浮栅隔离的第二浮栅;形成在第一浮栅和第二浮栅上的电介质膜，形成在电介质膜上的控制栅，位于第二隧道氧化膜的一侧以下的半导体衬底，以及形成在第一隧道氧化膜的一侧以下的半导体衬底中的第二结区。因此，本发明可以使用现有的工艺技术来实现高密度的2比特单元或3比特单元。此外，鉴于电荷存储/保持以及编程时间，它可以降低制造成本并实现比传统闪存单元有利的高集成闪存单元。

24. 发明授权

US07449400B2 Method of forming an isolation film in a semiconductor device 失效
标题翻译：在半导体器件中形成隔离膜的方法
公开(公告)号：US07449400B2
公开(公告)日：2008-11-11
申请号：US11155747
申请日：2005-06-20
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L21/425
CPC分类号： H01L21/76224 , H01L27/11526 , H01L27/11531
摘要： The present invention relates to an isolation film in a semiconductor device and method of forming the same. An isolation film is formed in a doped region of a peripheral region, in which the doped region is isolated from a deep well region of a cell region and the isolation film is thicker than an isolation film of the cell region so that a parasitic transistor is not generated and a leakage current can be prevented.
摘要翻译：本发明涉及一种半导体器件中的隔离膜及其制造方法。隔离膜形成在周边区域的掺杂区域中，其中掺杂区域与单元区域的深阱区域隔离，并且隔离膜比单元区域的隔离膜厚，使得寄生晶体管为不产生并且可以防止泄漏电流。

25. 发明申请

US20080037862A1 EXTENSIBLE SYSTEM AND METHOD FOR STEREO MATCHING IN REAL-TIME 有权
标题翻译：实时立体匹配的可扩展系统和方法
公开(公告)号：US20080037862A1
公开(公告)日：2008-02-14
申请号：US11678428
申请日：2007-02-23
申请人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
发明人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
IPC分类号： G06K9/00
CPC分类号： G06K9/32 , G06T7/593 , G06T2207/10021
摘要： Disclosed are a system and a method extensible for performing, in real-time, stereo snatching for calculating depth images with a result of searching for points of similarity by using images taken with two cameras. The system includes a coordinate creating module, a census transform module, a delay XOR calculation module, a stereo matching module, and a control module. Accordingly, by using the system extensible for performing stereo matching, depth information of corrected images can be acquired in real-time without using computer systems or software programs for special purposes. Furthermore, since the system extensible for performing stereo matching can be simply realized by hardware, the system and the method of the present invention can be easily applied to actual intellectual-type robots, industrial settings, etc.
摘要翻译：公开了一种可扩展的系统和方法，用于实时地执行用于计算深度图像的立体声捕获，其结果是通过使用用两个相机拍摄的图像来搜索相似点。该系统包括坐标创建模块，普查变换模块，延迟XOR计算模块，立体匹配模块和控制模块。因此，通过使用可扩展的用于执行立体匹配的系统，可以实时获取校正图像的深度信息，而不用于特殊目的的计算机系统或软件程序。此外，由于用于执行立体匹配的可扩展的系统可以通过硬件简单地实现，所以本发明的系统和方法可以容易地应用于实际的智能机器人，工业设置等。

26. 发明授权

US07020542B2 Apparatus for measuring and fixing the three-dimensional location of medical instrument 失效
标题翻译：用于测量和固定医疗器械三维位置的装置
公开(公告)号：US07020542B2
公开(公告)日：2006-03-28
申请号：US10437625
申请日：2003-05-14
申请人： Mun Sang Kim , Sung Kee Park , Jong Suk Choi , Chang Hyun Cho , Dong Seok Ryu , Yo Ha Hwang , Min Joo Choi
发明人： Mun Sang Kim , Sung Kee Park , Jong Suk Choi , Chang Hyun Cho , Dong Seok Ryu , Yo Ha Hwang , Min Joo Choi
IPC分类号： G06F19/00
CPC分类号： G05B19/401 , A61B34/70 , A61B90/50 , G05B2219/31136 , G05B2219/37431 , G05B2219/37618 , G05B2219/39251 , G05B2219/45123
摘要： An apparatus for measuring and fixing the three-dimensional location of medical instrument that can be easily placed at a desired location by a user. In addition, a medical apparatus for measuring the three-dimensional locations of an apparatus fixed at an end portion of a cancer and an external apparatus and fixing the apparatus at an end portion of the cancer, which can be easily placed at a desired location by a user and carries out the location-fixing and measuring at the same time. The apparatus is applicable for various medical fields such as the measurement of the location and orientation of an external apparatus, the measurement of relative locations of a medical instrument contacted to an end-portion of a cancer and the object body, and the fixation of the instrument at a desired location.
摘要翻译：一种用于测量和固定医疗仪器的三维位置的装置，其可以由用户容易地放置在期望的位置。另外，一种医疗装置，用于测量固定在癌的端部的装置的三维位置和外部装置，并且将该装置固定在癌症的末端部分，其可以容易地放置在期望的位置处用户同时进行定位和测量。该装置适用于各种医疗领域，例如测量外部设备的位置和方向，测量与癌症的终端部分接触的医疗器械的相对位置和物体，以及固定仪器在所需的位置。

27. 发明申请

US20050224770A1 Flexible screw type height control device 审中-公开
标题翻译：柔性螺杆式高度控制装置
公开(公告)号：US20050224770A1
公开(公告)日：2005-10-13
申请号：US10780966
申请日：2004-02-17
申请人： Munsang Kim , Yoha Hwang , Seung-Jong Kim , Jong Min Lee , Sung-Kee Park , Jong-Suk Choi
发明人： Munsang Kim , Yoha Hwang , Seung-Jong Kim , Jong Min Lee , Sung-Kee Park , Jong-Suk Choi
IPC分类号： F16H25/18 , F16H25/24
CPC分类号： F16H25/2427
摘要： A flexible screw type height control device comprises a housing, a servomotor mounted in the housing, a driving gear which is rotated by the servomotor, a driven gear which is provided with a spiral groove at a central portion thereof and is tooth-engaged with the driving gear, a flexible screw member which passes axially through the spiral groove of the driven gear and moves linearly upward and downward by the servomotor, and a telescopic unit including a plurality of sliding members which are slidably coupled to each other and cooperate with the flexible screw member. The flexible screw member is a coil spring. A first sliding member is slidably disposed in the housing. One end of the flexible screw member is extended outside the housing, and the other end is fixed to a last sliding member. Each sliding member is formed as an open-ended pipe and a cross-sectional area of the sliding members decreases from the first sliding member to the last sliding member.
摘要翻译：柔性螺杆式高度控制装置包括壳体，安装在壳体中的伺服电动机，由伺服电动机旋转的驱动齿轮;从动齿轮，其在其中心部分设有螺旋槽，并与其啮合驱动齿轮，通过轴向通过从动齿轮的螺旋槽并由伺服电机线性地向上和向下移动的柔性螺钉构件，以及包括多个滑动构件的伸缩单元，滑动构件彼此可滑动地联接并与柔性螺丝部件。柔性螺杆构件是螺旋弹簧。第一滑动构件可滑动地设置在壳体中。柔性螺钉构件的一端延伸到壳体外部，另一端固定在最后的滑动构件上。每个滑动构件形成为开口管，并且滑动构件的横截面积从第一滑动构件减小到最后滑动构件。

28. 发明授权

US08298961B2 Patterns of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的形态及其形成方法
公开(公告)号：US08298961B2
公开(公告)日：2012-10-30
申请号：US12650498
申请日：2009-12-30
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L21/475
CPC分类号： H01L21/0338 , H01L21/0337
摘要： A method of forming patterns of a semiconductor device comprises providing a semiconductor substrate comprising a first region wherein first patterns are to be formed and a second region wherein second patterns are to be formed, each of the second patterns having a wider width than the first patterns, forming an etch target layer over the semiconductor substrate, forming first etch patterns over the etch target layer of the first and second regions, forming second etch patterns on both sidewalls of each of the first etch patterns, wherein the second etch pattern formed in the second region has a wider width than the second etch pattern formed in the first region, removing the first etch patterns, forming third etch patterns over the etch target layer of the second region, the third etch pattern overlapping part of the second pattern, and etching the etch target layer using the third etch patterns and the second etch patterns as an etch mask, to form the first and second patterns.
摘要翻译：一种形成半导体器件的图形的方法包括提供一种半导体衬底，该半导体衬底包括将要形成第一图案的第一区域和要形成第二图案的第二区域，每个第二图案的宽度比第一图案宽在所述半导体衬底上形成蚀刻目标层，在所述第一和第二区域的所述蚀刻目标层上形成第一蚀刻图案，在所述第一蚀刻图案的每个的两个侧壁上形成第二蚀刻图案，其中形成在所述第一蚀刻图案中的所述第二蚀刻图案第二区域具有比在第一区域中形成的第二蚀刻图案宽的宽度，去除第一蚀刻图案，在第二区域的蚀刻目标层上形成第三蚀刻图案，第二蚀刻图案与第二图案重叠部分，以及蚀刻使用第三蚀刻图案和第二蚀刻图案作为蚀刻掩模的蚀刻目标层，以形成第一和第二图案。

29. 发明授权

US08252660B2 Flash memory device and method of manufacturing the same 有权
标题翻译：闪存装置及其制造方法
公开(公告)号：US08252660B2
公开(公告)日：2012-08-28
申请号：US12649572
申请日：2009-12-30
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L21/76
CPC分类号： H01L27/11519 , H01L21/76229 , H01L27/11521 , H01L27/11524
摘要： Disclosed herein are flash memory devices and methods of making the same. According to one embodiment, a flash memory device includes first trenches formed in a semiconductor substrate and arranged in parallel, second trenches discontinuously formed in the semiconductor substrate and arranged between the first trenches, first isolation structures respectively formed within the first trenches, second isolation structures respectively formed within the second trenches, and active regions defined by the first isolation structures and the second isolation structures.
摘要翻译：本文公开了闪存器件及其制造方法。根据一个实施例，闪速存储器件包括形成在半导体衬底中并且平行布置的第一沟槽，第二沟槽不连续地形成在半导体衬底中并且布置在第一沟槽之间，分别形成在第一沟槽内的第一隔离结构，第二隔离结构分别形成在第二沟槽内，以及由第一隔离结构和第二隔离结构限定的有源区。

30. 发明授权

US07643067B2 Rectification system and method of stereo image in real-time 有权
标题翻译：立体图像的整流系统和方法实时
公开(公告)号：US07643067B2
公开(公告)日：2010-01-05
申请号：US11677324
申请日：2007-02-21
申请人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
发明人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
IPC分类号： H04N5/225 , H04N13/00 , H04N5/228 , H04N9/04 , G06K9/32
CPC分类号： G06K9/209 , G06K9/03 , G06T3/0075 , G06T3/4007 , G06T2200/28 , G06T2207/10021 , H04N13/239 , H04N13/246
摘要： Disclosed is a system and a method for rectifying stereo images, which are acquired by two cameras, in real-time by using a calibration matrix resulting from camera calibration. The system includes a coordinate generation module; a rectification coordinate generation module; a bilinear interpolation value generation module; a rectification coordinate memory; a bilinear interpolation memory; an image buffer; an rectification module; and a control module. A structure of a hardware system capable of real-time stereo rectification is provided, and the operation results have been verified by implementing a hardware device. The real-time stereo rectification system makes it possible to acquire rectified images in real-time without using a separate computer system or a software program.
摘要翻译：公开了通过使用由相机校准产生的校准矩阵来实时校正由两个摄像机获取的立体图像的系统和方法。该系统包括坐标生成模块; 整流坐标生成模块; 双线性内插值生成模块; 整流坐标记忆; 双线性插值记忆; 图像缓冲区整改模块; 和控制模块。提供能够实时立体声整流的硬件系统的结构，并且通过实施硬件设备来验证操作结果。实时立体声整流系统使得可以实时获取整流图像而不使用单独的计算机系统或软件程序。

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