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21. 发明授权

US07781308B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07781308B2
公开(公告)日：2010-08-24
申请号：US12277352
申请日：2008-11-25
申请人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
摘要翻译：在第一单晶半导体膜上形成第二单晶半导体膜; 通过向第二单晶半导体膜中添加离子形成分离层; 用作接合层的第二绝缘膜形成在第二单晶半导体膜上; 使第一SOI衬底的表面和第二衬底的表面彼此面对，使得第二绝缘膜的表面和第二衬底的表面彼此接合; 然后进行热处理以在分离层处引起裂纹，从而形成第二SOI衬底，其中第二单晶半导体膜的一部分设置在第二衬底上，其间插入第二绝缘膜。

22. 发明申请

US20100084734A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体衬底和半导体器件的制造方法
公开(公告)号：US20100084734A1
公开(公告)日：2010-04-08
申请号：US12568761
申请日：2009-09-29
申请人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
发明人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L29/78603 , H01L21/76254 , H01L21/84
摘要： To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method.
摘要翻译：提供可以形成具有良好的结晶性和高性能的半导体元件的半导体衬底。具有脆化层的单晶半导体衬底和基底衬底之间的绝缘层接合; 通过热处理沿着脆化层分离单晶半导体衬底; 单晶半导体层固定在基底基板上; 用激光束照射单晶半导体层; 单晶半导体层处于部分熔融状态以进行再结晶; 并修复晶体缺陷。此外，通过微波光电导衰减法检测获得了单晶半导体层的最佳结晶度的激光束的能量密度。

23. 发明申请

US20090197392A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20090197392A1
公开(公告)日：2009-08-06
申请号：US12360419
申请日：2009-01-27
申请人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

24. 发明申请

US20090142908A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：US20090142908A1
公开(公告)日：2009-06-04
申请号：US12324065
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
IPC分类号： H01L21/203 , H01L21/36
CPC分类号： H01L31/1804 , H01L31/077 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. A second single crystal semiconductor layer is formed by epitaxially growing a semiconductor layer on the first single crystal semiconductor layer in accordance with a plasma CVD method in which a silane based gas and hydrogen with a flow rate 50 times or more that of the silane gas are used as a source gas. A second impurity semiconductor layer which has a conductivity type opposite to that of the first impurity semiconductor layer is formed over the second single crystal semiconductor layer. A second electrode is formed over the second impurity semiconductor layer.
摘要翻译：提供具有优异的光电转换特性的光电转换装置，同时有效地利用有限的资源。在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在第一杂质半导体层，第一电极和绝缘层上形成有脆性层单晶半导体衬底。在将绝缘层粘合到支撑基板上之后，将单晶半导体基板与用作分离平面的易碎层或其附近分离，从而在支撑基板上形成第一单晶半导体层。第二单晶半导体层是通过以等离子体CVD法在第一单晶半导体层上外延生长半导体层而形成的，其中硅烷气体和氢气的流量为硅烷气体的50倍以上用作源气体。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

25. 发明申请

US20090142904A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090142904A1
公开(公告)日：2009-06-04
申请号：US12277352
申请日：2008-11-25
申请人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
摘要翻译：在第一单晶半导体膜上形成第二单晶半导体膜; 通过向第二单晶半导体膜中添加离子形成分离层; 用作接合层的第二绝缘膜形成在第二单晶半导体膜上; 使第一SOI衬底的表面和第二衬底的表面彼此面对，使得第二绝缘膜的表面和第二衬底的表面彼此接合; 然后进行热处理以在分离层处引起裂纹，从而形成第二SOI衬底，其中第二单晶半导体膜的一部分设置在第二衬底上，其间插入第二绝缘膜。

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