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1. 发明授权

US08377804B2 Manufacturing method of semiconductor substrate and semiconductor device 有权
标题翻译：半导体衬底和半导体器件的制造方法
公开(公告)号：US08377804B2
公开(公告)日：2013-02-19
申请号：US12568761
申请日：2009-09-29
申请人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
发明人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/20 , H01L21/30
CPC分类号： H01L29/78603 , H01L21/76254 , H01L21/84
摘要： To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method.
摘要翻译：提供可以形成具有良好的结晶性和高性能的半导体元件的半导体衬底。具有脆化层的单晶半导体衬底和基底衬底之间的绝缘层接合; 通过热处理沿着脆化层分离单晶半导体衬底; 单晶半导体层固定在基底基板上; 用激光束照射单晶半导体层; 单晶半导体层处于部分熔融状态以进行再结晶; 并修复晶体缺陷。此外，通过微波光电导衰减法检测获得了单晶半导体层的最佳结晶度的激光束的能量密度。

2. 发明申请

US20100084734A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体衬底和半导体器件的制造方法
公开(公告)号：US20100084734A1
公开(公告)日：2010-04-08
申请号：US12568761
申请日：2009-09-29
申请人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
发明人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L29/78603 , H01L21/76254 , H01L21/84
摘要： To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method.
摘要翻译：提供可以形成具有良好的结晶性和高性能的半导体元件的半导体衬底。具有脆化层的单晶半导体衬底和基底衬底之间的绝缘层接合; 通过热处理沿着脆化层分离单晶半导体衬底; 单晶半导体层固定在基底基板上; 用激光束照射单晶半导体层; 单晶半导体层处于部分熔融状态以进行再结晶; 并修复晶体缺陷。此外，通过微波光电导衰减法检测获得了单晶半导体层的最佳结晶度的激光束的能量密度。

3. 发明授权

US08343847B2 Manufacturing method of SOI semiconductor device 有权
标题翻译： SOI半导体器件的制造方法
公开(公告)号：US08343847B2
公开(公告)日：2013-01-01
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

4. 发明申请

US20100093153A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20100093153A1
公开(公告)日：2010-04-15
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

5. 发明授权

US08815657B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08815657B2
公开(公告)日：2014-08-26
申请号：US12550540
申请日：2009-08-31
申请人： Suguru Ozawa , Atsuo Isobe , Takashi Hamada , Junpei Momo , Hiroaki Honda , Takashi Shingu , Tetsuya Kakehata
发明人： Suguru Ozawa , Atsuo Isobe , Takashi Hamada , Junpei Momo , Hiroaki Honda , Takashi Shingu , Tetsuya Kakehata
IPC分类号： H01L21/00
CPC分类号： H01L21/76254
摘要： After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.
摘要翻译：在通过附着设置在基底基板上的单晶半导体层通过激光照射之后，通过第一热处理来提高其特性，并且在向单晶半导体层添加赋予导电性的杂质元素之后，进行第二热处理比第一次热处理温度低。

6. 发明授权

US5149503A Apparatus for measuring hemoglobin concentration and oxygen saturation thereof 失效
标题翻译：用于测量血红蛋白浓度和氧气饱和度的装置
公开(公告)号：US5149503A
公开(公告)日：1992-09-22
申请号：US460057
申请日：1990-03-02
申请人： Hiromasa Kohno , Hiroaki Honda , Masahiro Nudeshima
发明人： Hiromasa Kohno , Hiroaki Honda , Masahiro Nudeshima
IPC分类号： A61B5/00 , G01N21/31
CPC分类号： G01N21/3151 , A61B5/0059 , A61B5/14557 , G01N2021/3144 , Y10S435/808
摘要： A light beam having a first wavelength (.lambda..sub.1) is applied to the blood from a first light radiation section, while a light beam having a second wavelength (.lambda..sub.2) is applied from second and third light radiation sections different in positions from the first radiation section and from each other to the blood and the respective reflected-light intensity (I.sub.1, I.sub.2, I.sub.3) is detected. A first correction value (X) for correcting the reflected-light intensity ratio (I.sub.2 /I.sub.3) is calculated by a first correction value operation section (40) and a second correction value (C.sub.1) is calculated by a second correction value operation section (42) by use of this first correction value and the reflected-light intensity (I.sub.3). The reflected-light intensity ratio (I.sub.1 /I.sub.2) is corrected by use of this second correction value and an oxygen saturation in the blood is operated based on correlation function by use of the corrected reflected-light intensity ratio (R.sub.s). The reflected-light intensity ratio (I.sub.2 /I.sub.3) is corrected by the coefficient of correction thus operated and the hemoglobin concentration in the blood is operated based on correlation function by use of the reflected light intensity ratio thus corrected.
摘要翻译： PCT No.PCT / JP88 / 00742 Sec。 371日期1990年3月2日 102（e）1990年3月2日PCT PCT。第WO89 / 01144号公报日期：1989年2月9日。具有第一波长（λ1）的光束从第一光辐射部分施加到血液，而具有第二波长（λ2）的光束从第二和第三光辐射检测到与第一辐射部分和彼此不同的部分与血液不同的部分和各自的反射光强度（I1，I2，I3）。通过第一校正值运算部（40）计算用于校正反射光强度比（I2 / I3）的第一校正值（X），第二校正值（C1）由第二校正值运算部 42）通过使用该第一校正值和反射光强度（I3）。通过使用该第二校正值来校正反射光强度比（I1 / I2），并且通过使用校正的反射光强度比（Rs），基于相关函数来操作血液中的氧饱和度。反射光强度比（I2 / I3）由这样操作的校正系数校正，并且通过使用如此校正的反射光强度比，基于相关函数来操作血液中的血红蛋白浓度。

7. 发明申请

US20120029816A1 Navigation Apparatus and Navigation Method 有权
标题翻译：导航仪和导航方法
公开(公告)号：US20120029816A1
公开(公告)日：2012-02-02
申请号：US12922138
申请日：2009-03-13
申请人： Takayuki Kato , Hiroaki Honda
发明人： Takayuki Kato , Hiroaki Honda
IPC分类号： G01C21/34
CPC分类号： G09B29/106 , G01C21/20 , G01C21/3635 , G01C21/3647 , G01S19/39 , G08G1/096827 , G08G1/096838 , G08G1/096866 , G08G1/096883 , H04W4/02 , H04W4/023
摘要： In order to notify a user that a facility is present in the neighborhood of a route to a destination, a mobile phone includes a location obtaining portion to obtain a present location (S03, S09), a destination setting portion to set a point of destination (S02), a departure point setting portion to set a point of departure (S04), a facility extraction portion to extract facility information of a facility located in the neighborhood of a route from the point of departure to the destination from among facility information included in map information (S08), and a light emission control portion to give notification at a prescribed timing if at least one facility information is extracted by the facility extraction portion (S14).
摘要翻译：为了通知用户在到目的地的路线附近存在设施，移动电话包括获取当前位置的位置获取部（S03，S09），设定目的地的目的地设定部（S02），设定出发点的出发点设定部（S04），设置提取部，从设置信息中提取位于从出发点到目的地的路线附近的设施的设施信息在地图信息（S08）中，以及发光控制部分，如果设施提取部分提取了至少一个设施信息，则在规定的定时通知（S14）。

8. 发明授权

US5152277A Catheter tube 失效
标题翻译：导管
公开(公告)号：US5152277A
公开(公告)日：1992-10-06
申请号：US460063
申请日：1990-02-26
申请人： Hiroaki Honda , Masahiro Nudeshima
发明人： Hiroaki Honda , Masahiro Nudeshima
IPC分类号： A61B1/015 , A61B1/018 , A61B1/12 , A61F2/958
CPC分类号： A61B1/00082 , A61B1/00135 , A61B1/015 , A61B1/018 , A61B1/12 , A61B1/3137 , A61M25/1011 , A61M25/1018
摘要： This invention relates to a catheter tube which is used for visualizing or medically treating the interior of a body cavity having a relatively small diameter, typically a blood vessel by inserting and leaving it in the body cavity.The catheter tube of the invention includes at least one inflatable/contractible balloon disposed adjacent the distal end thereof, and its tube body is formed with a lumen for inflating the balloon, a lumen for injecting a liquid into the body cavity, and a lumen for accommodating a visualizing or therapeutic instrument. The invention is characterized in that the visualizing or therapeutic instrument is moved in a longitudinal direction of the tube to move its distal end into and out of the opening of the instrument accommodating lumen, ensuring a clear observation over a wide field, that the respective lumens can be commonly replaced by a multi-purpose lumen, allowing the tube to be reduced in diameter, that visualization between two balloons provides a clearer visual image, and that a bypass lumen is additionally provided to maintain a blood flow through the blood vessel even during observation, enabling long-term observation.

9. 发明授权

US09329642B2 Mobile terminal device, storage medium, and method for display control of mobile terminal device 有权
标题翻译：移动终端装置，存储介质以及移动终端装置的显示控制方法
公开(公告)号：US09329642B2
公开(公告)日：2016-05-03
申请号：US13614690
申请日：2012-09-13
申请人： Shunsuke Nagata , Hiroaki Honda
发明人： Shunsuke Nagata , Hiroaki Honda
IPC分类号： G06F1/16 , G09G3/20
CPC分类号： G06F3/0346 , G06F1/1626 , G06F1/1694 , G06F3/0488 , G06F2200/1614 , G06F2200/1637 , G06F2203/04808 , G06T3/60 , G09G3/20 , G09G2354/00 , H04M1/72569
摘要： A mobile terminal device includes: a display; a display control module which displays an execution screen for an application program on the display; and a detection module which detects a posture of the mobile terminal device based on a gravity acceleration applied to the mobile terminal device. In this arrangement, the display control module controls a display direction of the execution screen with respect to the mobile terminal device according to the posture of the mobile terminal device, and performs suppression control so as to, even if the posture of the mobile terminal device is changed, suppress switching of the display direction corresponding to the changed posture, provided that a suppression condition for suppressing switching of the display direction is satisfied while the execution screen is displayed on the display.
摘要翻译：移动终端装置包括：显示器; 显示控制模块，其在显示器上显示应用程序的执行画面; 以及检测模块，其基于施加到所述移动终端装置的重力加速度来检测所述移动终端装置的姿势。在这种布置中，显示控制模块根据移动终端装置的姿势来控制执行画面相对于移动终端装置的显示方向，并进行抑制控制，以便即使移动终端装置的姿势如果在显示器上显示执行屏幕，则满足抑制显示方向的切换的抑制条件，从而抑制与改变的姿势对应的显示方向的切换。

10. 发明授权

US08589068B2 Navigation apparatus and navigation method 有权
标题翻译：导航仪和导航方法
公开(公告)号：US08589068B2
公开(公告)日：2013-11-19
申请号：US12922138
申请日：2009-03-13
申请人： Takayuki Kato , Hiroaki Honda
发明人： Takayuki Kato , Hiroaki Honda
IPC分类号： G01C21/34
CPC分类号： G09B29/106 , G01C21/20 , G01C21/3635 , G01C21/3647 , G01S19/39 , G08G1/096827 , G08G1/096838 , G08G1/096866 , G08G1/096883 , H04W4/02 , H04W4/023
摘要： In order to notify a user that a facility is present in the neighborhood of a route to a destination, a mobile phone includes a location obtaining portion to obtain a present location (S03, S09), a destination setting portion to set a point of destination (S02), a departure point setting portion to set a point of departure (S04), a facility extraction portion to extract facility information of a facility located in the neighborhood of a route from the point of departure to the destination from among facility information included in map information (S08), and a light emission control portion to give notification at a prescribed timing if at least one facility information is extracted by the facility extraction portion (S14).
摘要翻译：为了通知用户在到目的地的路线附近存在设施，移动电话包括获取当前位置的位置获取部（S03，S09），设定目的地的目的地设定部（S02），设定出发点的出发点设定部（S04），设置提取部，从设置信息中提取位于从出发点到目的地的路线附近的设施的设施信息在地图信息（S08）中，以及发光控制部分，如果设施提取部分提取了至少一个设施信息，则在规定的定时通知（S14）。

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