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1. 发明授权

US08377804B2 Manufacturing method of semiconductor substrate and semiconductor device 有权
标题翻译：半导体衬底和半导体器件的制造方法
公开(公告)号：US08377804B2
公开(公告)日：2013-02-19
申请号：US12568761
申请日：2009-09-29
申请人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
发明人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/20 , H01L21/30
CPC分类号： H01L29/78603 , H01L21/76254 , H01L21/84
摘要： To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method.
摘要翻译：提供可以形成具有良好的结晶性和高性能的半导体元件的半导体衬底。具有脆化层的单晶半导体衬底和基底衬底之间的绝缘层接合; 通过热处理沿着脆化层分离单晶半导体衬底; 单晶半导体层固定在基底基板上; 用激光束照射单晶半导体层; 单晶半导体层处于部分熔融状态以进行再结晶; 并修复晶体缺陷。此外，通过微波光电导衰减法检测获得了单晶半导体层的最佳结晶度的激光束的能量密度。

2. 发明申请

US20100084734A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体衬底和半导体器件的制造方法
公开(公告)号：US20100084734A1
公开(公告)日：2010-04-08
申请号：US12568761
申请日：2009-09-29
申请人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
发明人： Junpei Momo , Kosei Nei , Hiroaki Honda , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L29/78603 , H01L21/76254 , H01L21/84
摘要： To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method.
摘要翻译：提供可以形成具有良好的结晶性和高性能的半导体元件的半导体衬底。具有脆化层的单晶半导体衬底和基底衬底之间的绝缘层接合; 通过热处理沿着脆化层分离单晶半导体衬底; 单晶半导体层固定在基底基板上; 用激光束照射单晶半导体层; 单晶半导体层处于部分熔融状态以进行再结晶; 并修复晶体缺陷。此外，通过微波光电导衰减法检测获得了单晶半导体层的最佳结晶度的激光束的能量密度。

3. 发明授权

US08343847B2 Manufacturing method of SOI semiconductor device 有权
标题翻译： SOI半导体器件的制造方法
公开(公告)号：US08343847B2
公开(公告)日：2013-01-01
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

4. 发明申请

US20100093153A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20100093153A1
公开(公告)日：2010-04-15
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

5. 发明授权

US08383487B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08383487B2
公开(公告)日：2013-02-26
申请号：US13198171
申请日：2011-08-04
申请人： Hideomi Suzawa , Shinya Sasagawa , Akihisa Shimomura , Junpei Momo , Motomu Kurata , Taiga Muraoka , Kosei Nei
发明人： Hideomi Suzawa , Shinya Sasagawa , Akihisa Shimomura , Junpei Momo , Motomu Kurata , Taiga Muraoka , Kosei Nei
IPC分类号： H01L21/76
CPC分类号： H01L21/76254
摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
摘要翻译：在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层，通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层，所述支撑基板对残留在所述单晶半导体层上的所述易碎区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理，具有激光的晶体半导体层。

6. 发明授权

US08003483B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08003483B2
公开(公告)日：2011-08-23
申请号：US12399047
申请日：2009-03-06
申请人： Hideomi Suzawa , Shinya Sasagawa , Akihisa Shimomura , Junpei Momo , Motomu Kurata , Taiga Muraoka , Kosei Nei
发明人： Hideomi Suzawa , Shinya Sasagawa , Akihisa Shimomura , Junpei Momo , Motomu Kurata , Taiga Muraoka , Kosei Nei
IPC分类号： H01L21/76
CPC分类号： H01L21/76254
摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
摘要翻译：在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层，通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层，所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理，具有激光的晶体半导体层。

7. 发明授权

US08216914B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US08216914B2
公开(公告)日：2012-07-10
申请号：US12872222
申请日：2010-08-31
申请人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
发明人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
IPC分类号： H01L21/46 , H01L21/30 , H01L21/84 , H01L21/00
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

8. 发明授权

US08481393B2 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：半导体基板及其制造方法以及半导体装置的制造方法
公开(公告)号：US08481393B2
公开(公告)日：2013-07-09
申请号：US12844224
申请日：2010-07-27
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

9. 发明授权

US07851318B2 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：半导体基板及其制造方法以及半导体装置的制造方法
公开(公告)号：US07851318B2
公开(公告)日：2010-12-14
申请号：US12285924
申请日：2008-10-16
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。之后的单晶半导体衬底和支撑衬底键合到彼此中，半导体衬底被加热，从而使单晶半导体衬底夹持在损伤区域分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。所述单晶半导体层是通过激光束的照射，由此，单晶半导体层被重结晶，回收其结晶度和平坦化，以使单晶半导体层的表面熔化。在激光束照射后，将单晶半导体层在在该单晶半导体层不熔融的温度下加热，从而使单晶半导体层的寿命得以提高。

10. 发明申请

US20090117692A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090117692A1
公开(公告)日：2009-05-07
申请号：US12261832
申请日：2008-10-30
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo , Shunpei Yamazaki
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1274 , H01L29/66772 , H01L29/78603
摘要： A single crystal semiconductor substrate bonded over a supporting substrate with a buffer layer interposed therebetween and having a separation layer is heated to separate the single crystal semiconductor substrate using the separation layer or a region near the separation layer as a separation plane, thereby forming a single crystal semiconductor layer over the supporting substrate. The single crystal semiconductor layer is irradiated with a laser beam to re-single-crystallize the single crystal semiconductor layer through melting. An impurity element is selectively added into the single crystal semiconductor layer to form a pair of impurity regions and a channel formation region between the pair of impurity regions. The single crystal semiconductor layer is heated at temperature which is equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate and which does not cause melting of the single crystal semiconductor layer.
摘要翻译：加热粘合在支撑基板上的缓冲层之间并具有分离层的单晶半导体基板，使用分离层或分离层附近的区域作为分离平面分离单晶半导体基板，从而形成单个半导体基板晶体半导体层在支撑衬底上。用激光束照射单晶半导体层，通过熔融使单晶半导体层重新单晶化。在单晶半导体层中选择性地添加杂质元素，以在一对杂质区之间形成一对杂质区和沟道形成区。单晶半导体层在等于或高于400℃并等于或低于支撑衬底的应变点的温度下被加热，并且不会引起单晶半导体层的熔化。

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