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21. 发明申请

US20120181500A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：US20120181500A1
公开(公告)日：2012-07-19
申请号：US13498541
申请日：2011-07-07
申请人： Kiyotaka Tsuji , Takumi Mikawa , Kenji Tominaga
发明人： Kiyotaka Tsuji , Takumi Mikawa , Kenji Tominaga
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L27/2463 , H01L21/76879 , H01L45/04 , H01L45/146 , H01L45/1683
摘要： A non-volatile semiconductor memory device comprises a plurality of memory cell holes (101) formed through an interlayer insulating layer (80) at respective cross-points of a plurality of first wires (10) of a stripe shape and a plurality of second wires (20) of a stripe shape when viewed from above such that the memory cell holes (101) expose upper surfaces of the plurality of first wires, respectively, a plurality of dummy holes (111) formed on the plurality of first wires in the interlayer insulating layer such that the dummy holes reach the upper surfaces of the plurality of first wires, respectively, and stacked-layer structures formed inside the memory cell holes and inside the dummy holes, respectively, each of the stacked-layer structures including a first electrode (30) and a variable resistance layer (40); an area of a portion of the first wire which is exposed in a lower opening of one of the dummy holes being greater than an area of a portion of the first wire which is exposed in a lower opening of one of the memory cell holes; and one or more of the dummy holes being formed on each of the first wires.
摘要翻译：一种非易失性半导体存储器件包括：多条存储单元孔（101），其形成在层状绝缘层（80）的多个第一布线（10）的条状形状的各个交叉点处，多个第二布线（101）分别暴露在所述多个第一布线的上表面的多个虚设孔（111），所述多个第一布线形成在所述中间层绝缘层，使得所述虚拟孔分别到达所述多个第一布线的上表面，分别形成在所述存储单元孔内部和所述虚拟孔内部的堆叠层结构，所述层叠层结构中的每一个包括第一电极（30）和可变电阻层（40）; 在一个虚拟孔的下部开口中露出的第一线的一部分的面积大于暴露在一个存储单元孔的下部开口中的第一线的一部分的面积; 并且在每个第一导线上形成一个或多个虚拟孔。

22. 发明授权

US08184645B2 Communication system, gateway device and adapter device 有权
标题翻译：通信系统，网关设备和适配器
公开(公告)号：US08184645B2
公开(公告)日：2012-05-22
申请号：US12020624
申请日：2008-01-28
申请人： Kiyotaka Tsuji , Muneyuki Suzuki , Masashi Ishida
发明人： Kiyotaka Tsuji , Muneyuki Suzuki , Masashi Ishida
IPC分类号： H04L12/56
CPC分类号： H04M7/0066 , H04L65/103 , H04L65/104
摘要： A gateway device which mutually converts communication protocols among a subscriber network including a base station wirelessly housing a mobile terminal and an Internet Protocol processor to bring an interface from the base station into an Internet Protocol process, a public switched telephone network and a packet communication network, includes a synchronized network terminating unit which terminates the public switched telephone network to generate the in-device signal, a packet network terminating unit which terminates the packet communication network to generate the in-device signal, a subscriber network terminating unit which houses the base station via the interface to which the Internet Protocol process is applied and terminates the subscriber network to generate the in-device signal, and an exchange unit which exchanges in-device signals each generated from the synchronized network terminating unit, the packet network terminating unit and the subscriber network terminating unit.
摘要翻译：一种网关设备，其在包括无线容纳移动终端的基站和互联网协议处理器的用户网络中相互转换通信协议，以将从基站进入的因特网协议进程，公共交换电话网络和分组通信网络包括终止公共交换电话网络以产生设备内信号的同步网络终端单元，终止分组通信网络以生成设备内信号的分组网络终端单元，收容基站的用户网络终端单元通过应用了因特网协议处理的接口站终端，终止用户网络以生成设备内信号;以及交换单元，其交换从同步网络终端单元，分组网络终端单元和分组网络终端单元生成的设备内信号，订户网络终止uni t。

23. 发明授权

US07938948B2 Silver and silver alloy plating bath 有权
标题翻译：银和银合金电镀浴
公开(公告)号：US07938948B2
公开(公告)日：2011-05-10
申请号：US12553731
申请日：2009-09-03
申请人： Kiyotaka Tsuji , Tetsuji Nishikawa , Takao Takeuchi , Keigo Obata , Hidemi Nawafune
发明人： Kiyotaka Tsuji , Tetsuji Nishikawa , Takao Takeuchi , Keigo Obata , Hidemi Nawafune
IPC分类号： C25D3/46 , C25D3/64 , C23C18/31
CPC分类号： C25D3/46 , C25D3/64
摘要： To develop stable, non-cyanide silver and silver alloy plating baths. The present invention is a silver and silver alloy plating bath, comprises: (A) a soluble salt, comprising a silver salt or a mixture of a silver salt and a salt of a metal selected from the group consisting of tin, bismuth, cobalt, antimony, iridium, indium, lead, copper, iron, zinc, nickel, palladium, platinum, and gold; and (B) at least one aliphatic sulfide compound comprising a functionality selected from the group consisting of an ether oxygen atom, a 3-hydroxypropyl group, and a hydroxypropylene group, with the proviso that the aliphatic sulfide compound does not comprise a basic nitrogen atom.
摘要翻译：开发稳定的非氰化银和银合金电镀浴。本发明是一种银和银合金电镀液，包括：（A）可溶性盐，其包含银盐或银盐和选自锡，铋，钴等的金属盐的混合物，锑，铱，铟，铅，铜，铁，锌，镍，钯，铂和金; 和（B）至少一种包含选自醚氧原子，3-羟基丙基和羟基亚丙基的官能团的脂族硫化物，条件是脂族硫化物不包含碱性氮原子。

24. 发明申请

US20090321269A1 SILVER AND SILVER ALLOY PLATING BATH 有权
标题翻译：银和银合金镀锌浴
公开(公告)号：US20090321269A1
公开(公告)日：2009-12-31
申请号：US12553731
申请日：2009-09-03
申请人： Kiyotaka TSUJI , Tetsuji NISHIKAWA , Takao TAKEUCHI , Keigo OBATA , Hidemi NAWAFUNE
发明人： Kiyotaka TSUJI , Tetsuji NISHIKAWA , Takao TAKEUCHI , Keigo OBATA , Hidemi NAWAFUNE
IPC分类号： C25D3/64 , C25D3/46
CPC分类号： C25D3/46 , C25D3/64
摘要： To develop stable, non-cyanide silver and silver alloy plating baths. The present invention is a silver and silver alloy plating bath, comprises: (A) a soluble salt, comprising a silver salt or a mixture of a silver salt and a salt of a metal selected from the group consisting of tin, bismuth, cobalt, antimony, iridium, indium, lead, copper, iron, zinc, nickel, palladium, platinum, and gold; and (B) at least one aliphatic sulfide compound comprising a functionality selected from the group consisting of an ether oxygen atom, a 3-hydroxypropyl group, and a hydroxypropylene group, with the proviso that the aliphatic sulfide compound does not comprise a basic nitrogen atom.
摘要翻译：开发稳定的非氰化银和银合金电镀浴。本发明是一种银和银合金电镀液，包括：（A）可溶性盐，其包含银盐或银盐和选自锡，铋，钴等的金属盐的混合物，锑，铱，铟，铅，铜，铁，锌，镍，钯，铂和金; 和（B）至少一种包含选自醚氧原子，3-羟基丙基和羟基亚丙基的官能团的脂族硫化物，条件是脂族硫化物不包含碱性氮原子。

25. 发明授权

US07630387B2 Gateway apparatus and method of protection switching thereof 有权
标题翻译：网关设备及其保护切换方法
公开(公告)号：US07630387B2
公开(公告)日：2009-12-08
申请号：US11542198
申请日：2006-10-04
申请人： Kiyotaka Tsuji
发明人： Kiyotaka Tsuji
IPC分类号： H04L12/28 , H04L12/56 , H04L12/66
CPC分类号： H04L65/80 , H04L29/06027 , H04L43/16 , H04L65/103 , H04L65/104 , H04L69/40 , H04M3/08 , H04M7/1205
摘要： A gateway apparatus comprising signal converter has service line concentrating unit and protection line concentrating unit, packet switch has a plurality of IP converters each line-concentrated to service line concentrating unit and protection line concentrating unit, first monitor monitoring responses from the plurality of IP converters through service line concentrating unit and protection line concentrating unit, second monitor monitoring responses from the plurality of IP converters through paths deferring from those of first monitor, failure determiner determining presence or absence of failures in at least any one of service line concentrating unit, protection line concentrating unit and the plurality of IP converters on basis of presences or absences of responses monitored by first and second monitors, respectively, and switcher switching protection line concentrating unit to be in effect to operate it as new service system when failure determiner has determined that any failure is present in service line concentrating unit.
摘要翻译：包括信号转换器的网关装置具有服务线集中单元和保护线路集中单元，分组交换机具有多个IP转换器，每个线路集中到业务线路集中单元和保护线路集中单元，首先监视来自多个IP转换器的响应通过业务线路集中单元和保护线路集中单元，第二监视器监视来自多个IP转换器的响应，通过延迟来自第一监视器的路径的响应，故障确定器确定服务线集中单元中的至少任一个中的故障存在或不存在，保护分别基于由第一和第二监视器监视的响应的存在或缺席以及切换器切换保护线路集中单元在故障确定器确定为有效时将其作为新的服务系统进行操作的线路集中单元和多个IP转换器任何失败存在于服务线集中单元中。

26. 发明授权

US06939722B2 Method of forming magnetic memory 有权
标题翻译：形成磁记忆体的方法
公开(公告)号：US06939722B2
公开(公告)日：2005-09-06
申请号：US10116634
申请日：2002-04-04
申请人： Takeshi Okazawa , Kiyotaka Tsuji
发明人： Takeshi Okazawa , Kiyotaka Tsuji
IPC分类号： H01F10/16 , H01F10/30 , H01F41/18 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/115 , H01L27/22 , H01L43/08 , H01L43/12 , H01L21/00
CPC分类号： H01L43/12 , B82Y10/00
摘要： A method of forming a magnetic memory, includes, forming a first magnetic film over a substrate, forming a second magnetic film on the first magnetic film, forming a conductive film on second magnetic film, and forming a resist pattern on the conductive film. Then, a first pattern is formed by etching the conductive film using the resist pattern as a mask and the resist pattern is removed. Then, a first magnetic substance layer is formed by etching the second magnetic film using the first pattern as a mask.
摘要翻译：形成磁存储器的方法包括：在衬底上形成第一磁膜，在第一磁性膜上形成第二磁性膜，在第二磁性膜上形成导电膜，并在导电膜上形成抗蚀剂图案。然后，通过使用抗蚀剂图案作为掩模蚀刻导电膜并除去抗蚀剂图案，形成第一图案。然后，通过使用第一图案作为掩模蚀刻第二磁性膜来形成第一磁性物质层。

27. 发明授权

US06746875B2 Magnetic memory and method of its manufacture 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US06746875B2
公开(公告)日：2004-06-08
申请号：US10271007
申请日：2002-10-15
申请人： Takeshi Okazawa , Kiyotaka Tsuji , Kuniko Kikuta
发明人： Takeshi Okazawa , Kiyotaka Tsuji , Kuniko Kikuta
IPC分类号： H01L2100
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/12
摘要： A magnetic memory of a present invention is formed as below. The magnetic memory has a TMR film formed on a first conductive film, and a second conductive film with a flat top surface, having the same plane shape as that of the TMR film, formed on the TMR laminated film. A first insulating film having a flat top surface and the same height as the surface of the second conductive film is formed so as to surround the TMR film and the second conductive film. A third conductive film connected electrically to the second conductive film is formed on the first insulating film.
摘要翻译：本发明的磁存储器如下形成。磁性存储器具有形成在第一导电膜上的TMR膜和形成在TMR层叠膜上的具有与TMR膜相同的平面形状的具有平坦顶表面的第二导电膜。形成具有与第二导电膜的表面平坦的顶表面和相同高度的第一绝缘膜，以便包围TMR膜和第二导电膜。与第二导电膜电连接的第三导电膜形成在第一绝缘膜上。

28. 发明授权

US09252189B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储元件，非易失性半导体存储器件以及用于制造非易失性半导体存储器件的方法
公开(公告)号：US09252189B2
公开(公告)日：2016-02-02
申请号：US13996203
申请日：2012-06-18
申请人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
发明人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
IPC分类号： H01L27/24 , H01L45/00 , H01L29/66 , H01L29/872 , H01L27/22
CPC分类号： H01L27/2409 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first current steering layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second current steering layer which covers side surfaces of the first current steering element electrode, the first current steering layer, and the second current steering element electrode.
摘要翻译：非易失性半导体存储元件包括：可变电阻元件，包括第一电极，可变电阻层和第二电极，并且具有根据施加在第一电极和第二电极之间的电脉冲的极性而变化的电阻值 ; 并且电连接到可变电阻元件的电流导向元件允许电流双向流动，并且具有非线性电流 - 电压特性。当前的操舵元件（i）具有第一电流导向元件电极，第一电流导向层和第二电流操舵元件电极按此顺序堆叠的结构，（ⅱ）包括覆盖第一电流操舵元件电极，第一电流导向层和第二电流导向元件电极的侧面。

29. 发明授权

US08863203B2 Video server apparatus 有权
标题翻译：视频服务器设备
公开(公告)号：US08863203B2
公开(公告)日：2014-10-14
申请号：US12700007
申请日：2010-02-04
申请人： Kiyotaka Tsuji
发明人： Kiyotaka Tsuji
IPC分类号： H04N7/173 , H04N21/2312 , H04N19/102 , H04N21/2183 , H04N21/235 , H04N21/231
CPC分类号： H04N21/2312 , H04N7/17336 , H04N19/196 , H04N19/463 , H04N21/2183 , H04N21/23106 , H04N21/235
摘要： A video server apparatus includes an interface unit configured to receive a video data file, memory units configured to store data files received by the interface unit, a line concentrator configured to receive the data files retrieved from the memory units and packetized, decoders configured to decode a packetized data file transmitted from the line concentrator and to output video data, a switch configured to switch signal paths between the line concentrator and the decoders, a data transmission controller configured to control data transmission by packet transmission over a standardized general-purpose local area network among the interface unit, the memory units, the line concentrator, the switch, and the decoders, and a timing controller configured to generate time slots for the memory units and causes a packetized data file to be transmitted from at least one of the memory units within a corresponding time slot to the line concentrator.
摘要翻译：视频服务器装置包括：接口单元，被配置为接收视频数据文件;存储单元，被配置为存储由接口单元接收的数据文件;线路集中器，被配置为接收从存储器单元检索的数据文件和分组化解码器，从集线器发送的分组数据文件和输出视频数据;配置成切换集线器和解码器之间的信号路径的开关;数据传输控制器，被配置为通过在标准化通用局域上的分组传输来控制数据传输接口单元，存储器单元，集线器，开关和解码器之间的网络，以及定时控制器，被配置为生成用于存储器单元的时隙，并且使分组数据文件从存储器中的至少一个发送在线集中器的相应时隙内的单元。

30. 发明申请

US20130270510A1 NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器元件，非易失性半导体存储器件及其制造非易失性半导体存储器件的方法
公开(公告)号：US20130270510A1
公开(公告)日：2013-10-17
申请号：US13996203
申请日：2012-06-18
申请人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
发明人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2409 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first semiconductor layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second semiconductor layer which covers side surfaces of the first current steering element electrode, the first semiconductor layer, and the second current steering element electrode.
摘要翻译：非易失性半导体存储元件包括：可变电阻元件，包括第一电极，可变电阻层和第二电极，并且具有根据施加在第一电极和第二电极之间的电脉冲的极性而变化的电阻值 ; 并且电连接到可变电阻元件的电流导向元件允许电流双向流动，并且具有非线性电流 - 电压特性。当前的操舵元件（i）具有第一电流操舵元件电极，第一半导体层和第二电流操舵元件电极依次层叠的结构，（ⅱ）包括覆盖侧面的第二半导体层的第一电流操舵元件电极，第一半导体层和第二电流操舵元件电极。

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