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21. 发明申请

US20080187776A1 MULTILAYER SUBSTRATE 审中-公开
标题翻译：多层基板
公开(公告)号：US20080187776A1
公开(公告)日：2008-08-07
申请号：US12026863
申请日：2008-02-06
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Yoshio Nishimoto , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Yoshio Nishimoto , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： B32B15/00
CPC分类号： C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , Y10T428/12778
摘要： Provided is a multilayer substrate having the configuration in which a multilayer film is formed on a principal surface opposite to a principal surface in the oxide-thin-film lamination direction in a translucent substrate. The multilayer film is formed by sequentially laminating a dielectric film, Au (gold) film, and oxide film in this order from the translucent substrate. On the principal surface opposite to the principal surface on which the oxide thin film is disposed, the multilayer film containing the Au film is formed, the Au film can reflect and block the excessive infrared light from a substrate holder or a heat source at the time of growth. As a result, temperature can be accurately measured.
摘要翻译：提供一种多层基板，其具有在透光性基板中在与氧化物薄膜层叠方向的主面相反的主面上形成多层膜的结构。通过从透光性基板依次层叠电介质膜Au（金）膜和氧化膜而形成多层膜。在与设置有氧化物薄膜的主表面相对的主表面上形成含有Au膜的多层膜，Au膜可以反映并阻挡来自衬底保持器或热源的过多红外光的增长。结果，可以精确地测量温度。

22. 发明授权

US07292382B2 Light control unit 失效
标题翻译：灯光控制单元
公开(公告)号：US07292382B2
公开(公告)日：2007-11-06
申请号：US11346936
申请日：2006-02-03
申请人： Yoshikazu Fujimori , Ken Nakahara , Takashi Nakamura
发明人： Yoshikazu Fujimori , Ken Nakahara , Takashi Nakamura
IPC分类号： G02F1/03
CPC分类号： G11C13/042 , G02F1/055 , G02F2201/124 , G02F2203/12 , G09G3/346 , G09G2300/0857
摘要： A light control unit comprises: a substrate; an insulating film; a first transistor; a reflecting film formed on the insulating film; a light modulating film formed on the reflecting film; a plurality of pairs of electrodes arranged two-dimensionally on the light modulating film; and a polarizing plate formed on a first electrode. Here, the light modulating film is made of a material that varies in refractive index in accordance with the intensity of an electric field applied thereto. For such a material, PLZT containing Pb, Zr, Ti, and La as constituent elements may be used.
摘要翻译：光控制单元包括：基板; 绝缘膜; 第一晶体管; 形成在绝缘膜上的反射膜; 形成在反射膜上的光调制膜; 在光调制膜上二维布置的多对电极; 以及形成在第一电极上的偏振片。这里，光调制膜由根据施加到其上的电场强度的折射率变化的材料制成。对于这种材料，可以使用含有Pb，Zr，Ti和La作为构成元素的PLZT。

23. 发明授权

US07196348B2 GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency 有权
标题翻译： GaN系半导体发光器件的发光效率和光提取效率优异
公开(公告)号：US07196348B2
公开(公告)日：2007-03-27
申请号：US10763137
申请日：2004-01-21
申请人： Ken Nakahara
发明人： Ken Nakahara
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/42 , H01L33/32
摘要： Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO electrode film and a p type GaN system semiconductor layer, thus resulting in a not uniform flow of an electric current. It is an object of the present invention to provide a semiconductor light emitting device constituted by forming a transparent electrode, which facilitates acquiring an ohmic property, to be replaced by an ITO electrode film, at the light extracting or light exit side of the GaN system semiconductor light emitting device, so as to improve a light emission efficiency and a radiation extracting efficiency or a light exit efficiency of a GaN system semiconductor light emitting device. In order to accomplish the above mentioned object, the present invention provides a semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between an n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a Ga-doped MgzZn1-zO (0≦
摘要翻译：虽然通过常规使用的ITO电极膜提供了发射光的高透光率，但是在ITO电极膜和ap型GaN系半导体层之间形成肖特基型接触，从而导致不均匀的流动电流。本发明的目的是提供一种半导体发光器件，其通过在GaN系统的光提取或光出射侧形成有助于获得由ITO电极膜代替的欧姆性的透明电极以提高GaN系半导体发光元件的发光效率和放射线提取效率或光出射效率。为了实现上述目的，本发明提供了一种半导体发光器件，其包括由n型GaN系半导体层和p型GaN系半导体层之间插入的由GaN系半导体构成的发光层，其中提供Ga掺杂的Mg z Zn 1-z O（0 <= 1）电极膜。

24. 发明申请

US20060126360A1 Light control unit 失效
标题翻译：灯光控制单元
公开(公告)号：US20060126360A1
公开(公告)日：2006-06-15
申请号：US11346936
申请日：2006-02-03
申请人： Yoshikazu Fujimori , Ken Nakahara , Takashi Nakamura
发明人： Yoshikazu Fujimori , Ken Nakahara , Takashi Nakamura
IPC分类号： F21V7/04
CPC分类号： G11C13/042 , G02F1/055 , G02F2201/124 , G02F2203/12 , G09G3/346 , G09G2300/0857
摘要： A light control unit comprises: a substrate; an insulating film; a first transistor; a reflecting film formed on the insulating film; a light modulating film formed on the reflecting film; a plurality of pairs of electrodes arranged two-dimensionally on the light modulating film; and a polarizing plate formed on a first electrode. Here, the light modulating film is made of a material that varies in refractive index in accordance with the intensity of an electric field applied thereto. For such a material, PLZT containing Pb, Zr, Ti, and La as constituent elements may be used.
摘要翻译：光控制单元包括：基板; 绝缘膜; 第一晶体管; 形成在绝缘膜上的反射膜; 形成在反射膜上的光调制膜; 在光调制膜上二维布置的多对电极; 以及形成在第一电极上的偏振片。这里，光调制膜由根据施加到其上的电场强度的折射率变化的材料制成。对于这种材料，可以使用含有Pb，Zr，Ti和La作为构成元素的PLZT。

25. 发明申请

US20120213242A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20120213242A1
公开(公告)日：2012-08-23
申请号：US13398818
申请日：2012-02-16
申请人： Taketoshi Tanaka , Shinya Takado , Junichi Kashiwagi , Masashi Yamamoto , Ken Nakahara
发明人： Taketoshi Tanaka , Shinya Takado , Junichi Kashiwagi , Masashi Yamamoto , Ken Nakahara
IPC分类号： H01S5/026
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01S5/0224 , H01S5/0425 , H01S5/16 , H01S5/2009 , H01S5/2027 , H01S5/2214 , H01S5/3213 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device includes a nitride semiconductor laminate structure including an n-type clad layer, an n-type guide layer formed on the n-type clad layer, a light emitting layer formed on the n-type guide layer and a p-type semiconductor layer formed on the light emitting layer. The nitride semiconductor laminate structure does not include a p-type semiconductor clad layer. The semiconductor laser device further includes an upper clad layer formed on the p-type semiconductor layer. The upper clad layer includes a first conductive film made of an indium oxide-based material and a second conductive film formed on the first conductive film and made of a zinc oxide-based material, a gallium oxide-based material or a tin oxide-based material.
摘要翻译：半导体激光器件包括氮化物半导体层叠结构，其包括n型覆盖层，形成在n型覆盖层上的n型引导层，形成在n型引导层上的发光层和p型形成在发光层上的半导体层。氮化物半导体层叠结构不包括p型半导体包覆层。半导体激光器件还包括形成在p型半导体层上的上覆层。上覆盖层包括由氧化铟基材料制成的第一导电膜和形成在第一导电膜上并由氧化锌基材料，氧化镓基材料或氧化锡基材料形成的第二导电膜材料。

26. 发明申请

US20120064653A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL LAYER 审中-公开
标题翻译：氮化物半导体器件和氮化物半导体晶体层的生长方法
公开(公告)号：US20120064653A1
公开(公告)日：2012-03-15
申请号：US13244389
申请日：2011-09-24
申请人： Ken NAKAHARA , Kentaro Tamura
发明人： Ken NAKAHARA , Kentaro Tamura
IPC分类号： H01L33/32 , H01L21/20
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66454 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/12
摘要： A method for manufacturing a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like. The method includes the steps of forming a buffer crystalline layer of the nitride semiconductor made of AlxGayIn1-x-yN (0≦x≦1, 0≦y ≦1 and 0≦x+y≦1), in which both an a-axis and a c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, by plasma laser deposition(PLD) method, and growing epitaxially the nitride semiconductor layer on the buffer layer so as to form a device such as a nitride semiconductor light emitting diode, by metal organic chemical vapor deposition (MOCVD).
摘要翻译：一种氮化物半导体发光器件，晶体管器件等氮化物半导体器件的制造方法。该方法包括以下步骤：形成由Al x Ga y In 1-x-y N（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1和0＆nlE; x + y＆nlE; 1）制成的氮化物半导体的缓冲晶体层，通过等离子体激光沉积（PLD）方法直接在与氮化物半导体晶格失配的衬底上而不形成非晶体低温缓冲层的方式对准轴，并且在外延上生长缓冲层上的氮化物半导体层以通过金属有机化学气相沉积（MOCVD）形成诸如氮化物半导体发光二极管的器件。

27. 发明授权

US07960727B2 Zinc oxide based compound semiconductor device 有权
标题翻译：氧化锌基化合物半导体器件
公开(公告)号：US07960727B2
公开(公告)日：2011-06-14
申请号：US11992407
申请日：2006-09-21
申请人： Ken Nakahara , Yuji Hiroyuki
发明人： Ken Nakahara , Yuji Hiroyuki
IPC分类号： H01L29/10 , C30B25/18
CPC分类号： H01L33/28 , H01L29/225 , H01L29/7787 , H01L33/16 , H01S5/0207 , H01S5/0422 , H01S5/2201 , H01S5/2231 , H01S5/327
摘要： There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0≦x
摘要翻译：提供了一种氧化锌基化合物半导体器件，即使当通过形成具有ZnO基化合物半导体层的异质结的层叠部分形成半导体器件时，也不会导致驱动电压的任何上升，同时确保p型掺杂，同时可以实现良好的结晶度和优异的器件特性。 ZnO基化合物半导体层（2）〜（6）在由Mg x Zn 1-x O（0＆nlE; x <1）构成的基板（1）的主面上外延生长。基板的主平面是A平面{11-20}或M平面{10-10}在-c轴方向上倾斜的平面。

28. 发明申请

US20110114938A1 ZnO SEMICONDUCTOR ELEMENT 审中-公开
标题翻译： ZnO半导体元件
公开(公告)号：US20110114938A1
公开(公告)日：2011-05-19
申请号：US12735798
申请日：2009-02-20
申请人： Ken Nakahara , Kentaro Tamura , Hiroyuki Yuji , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Kentaro Tamura , Hiroyuki Yuji , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/12
CPC分类号： H01L33/28 , H01L33/02
摘要： Provided is a ZnO-based semiconductor device in which, in the case of forming a laminate including an acceptor-doped layer made of a ZnO-based semiconductor, the properties of a film can be stabilized by preventing deterioration of the flatness of the acceptor-doped layer or a layer after the acceptor-doped layer and an increase of crystal defect in the layer, without lowering the concentration of an acceptor element.
摘要翻译：提供了一种ZnO基半导体器件，其中在形成包含由ZnO基半导体制成的受主掺杂层的层压体的情况下，可以通过防止受体 - 掺杂层或受体掺杂层之后的层，并且层中的晶体缺陷增加，而不降低受主元素的浓度。

29. 发明申请

US20110037067A1 ZNO-GROUP SEMICONDUCTOR ELEMENT 审中-公开
标题翻译： ZNO-GROUP半导体元件
公开(公告)号：US20110037067A1
公开(公告)日：2011-02-17
申请号：US12734772
申请日：2008-11-20
申请人： Ken Nakahara , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： H01L29/22
CPC分类号： H01L29/045 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L29/22 , H01L29/221 , H01L29/868 , H01L33/28
摘要： Provided is a ZnO-based semiconductor device in which flat ZnO-based semiconductor layers can be grown on a MgZnO substrate having a laminate-side principal surface including a C-plane. With an MgxZn1-xO substrate (0≦x
摘要翻译：提供一种其中可以在具有包括C面的层压体侧主表面的MgZnO基板上生长平坦的ZnO基半导体层的ZnO基半导体器件。对于具有包括C面的主表面的Mg x Zn 1- x O衬底（0＆amp; nlE; x <1），主表面形成为使得在衬底的晶轴的c轴和通过突出在由m轴和衬底的晶轴的c轴限定的平面上的主表面的法线可以在0 <Φm和nlE的范围内; 3。在如此形成的主表面上，外延生长ZnO基半导体层2至5。在ZnO基半导体层5上形成p电极8，在Mg x Zn 1-x O基板1的底面形成有n电极9.以这种方式，在Mg x Zn n-x O基板的表面上形成有台阶同时在m轴方向上规则地布置。由此，可以避免称为步骤聚束的现象，能够提高在基板1上形成的各半导体层的膜的平坦度。

30. 发明申请

US20110033718A1 ZnO THIN FILM 审中-公开
标题翻译： ZnO薄膜
公开(公告)号：US20110033718A1
公开(公告)日：2011-02-10
申请号：US12450597
申请日：2008-04-02
申请人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
发明人： Ken Nakahara , Hiroyuki Yuji , Kentaro Tamura , Shunsuke Akasaka , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
IPC分类号： C30B29/16 , B32B9/00
CPC分类号： H01L21/02472 , C30B23/025 , C30B29/16 , H01L21/02403 , H01L21/02554 , H01L21/02579 , H01L21/02631 , Y10T428/31678
摘要： Provided is a ZnO-based thin film which is doped with p-type impurities and which can be used for various devices. An MgxZn1-xO film (0≦x≦0.5) is formed on top of a substrate so as to have an acceptor concentration of a p-type dopant that is 5×1020 cm−3 or less. An acceptor concentration exceeding 5×1020 cm−3 results in the formation of a mixed crystal of the p-type impurities and the ZnO crystal as the base material. Accordingly, no high-quality ZnO-based thin film doped to be p-type can be obtained. This fact is testified by the change observed in the ZnO secondary ion intensity.
摘要翻译：提供了掺杂有p型杂质并可用于各种器件的ZnO基薄膜。在衬底的顶部形成Mg x Zn 1-x O膜（0＆amp; nlE; x＆lt; lE; 0.5），使其具有5×1020cm-3以下的p型掺杂剂的受主浓度。受体浓度超过5×1020cm-3导致形成p型杂质和ZnO晶体的混合晶体作为基材。因此，不能获得掺杂为p型的高品质ZnO基薄膜。这个事实是通过在ZnO二次离子强度中观察到的变化来证明的。

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