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1. 发明申请

US20120213242A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20120213242A1
公开(公告)日：2012-08-23
申请号：US13398818
申请日：2012-02-16
申请人： Taketoshi Tanaka , Shinya Takado , Junichi Kashiwagi , Masashi Yamamoto , Ken Nakahara
发明人： Taketoshi Tanaka , Shinya Takado , Junichi Kashiwagi , Masashi Yamamoto , Ken Nakahara
IPC分类号： H01S5/026
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01S5/0224 , H01S5/0425 , H01S5/16 , H01S5/2009 , H01S5/2027 , H01S5/2214 , H01S5/3213 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device includes a nitride semiconductor laminate structure including an n-type clad layer, an n-type guide layer formed on the n-type clad layer, a light emitting layer formed on the n-type guide layer and a p-type semiconductor layer formed on the light emitting layer. The nitride semiconductor laminate structure does not include a p-type semiconductor clad layer. The semiconductor laser device further includes an upper clad layer formed on the p-type semiconductor layer. The upper clad layer includes a first conductive film made of an indium oxide-based material and a second conductive film formed on the first conductive film and made of a zinc oxide-based material, a gallium oxide-based material or a tin oxide-based material.
摘要翻译：半导体激光器件包括氮化物半导体层叠结构，其包括n型覆盖层，形成在n型覆盖层上的n型引导层，形成在n型引导层上的发光层和p型形成在发光层上的半导体层。氮化物半导体层叠结构不包括p型半导体包覆层。半导体激光器件还包括形成在p型半导体层上的上覆层。上覆盖层包括由氧化铟基材料制成的第一导电膜和形成在第一导电膜上并由氧化锌基材料，氧化镓基材料或氧化锡基材料形成的第二导电膜材料。

2. 发明授权

US08885681B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08885681B2
公开(公告)日：2014-11-11
申请号：US13548745
申请日：2012-07-13
申请人： Shinya Takado , Junichi Kashiwagi
发明人： Shinya Takado , Junichi Kashiwagi
IPC分类号： H01S5/34 , H01S5/343 , H01S5/32 , H01S5/20 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0421 , H01S5/0425 , H01S5/2009 , H01S5/2031 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/3216
摘要： A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlxGa1-xN layer (0≦x
摘要翻译：半导体激光装置产生发射波长为400〜410nm的蓝紫色光。该器件包括n型III族氮化物半导体层，层叠在n型半导体层上并具有InGaN量子阱层的有源层，层叠在有源层上的p型III族氮化物半导体层和透明电极与p型半导体层接触并用作包层。 n型半导体层包括n型覆盖层和设置在覆盖层和有源层之间的n型引导层。引导层包括其中周期性地层叠InGaN层和Al x Ga 1-x N层（0＆lt; 1lE; x <1）的超晶格层，超晶格层与活性层接触并具有2.6或更低的平均折射率。 InGaN层的In组成低于InGaN量子阱层的In组成。

3. 发明授权

US09257548B2 Nitride semiconductor element and nitride semiconductor package 有权
标题翻译：氮化物半导体元件和氮化物半导体封装
公开(公告)号：US09257548B2
公开(公告)日：2016-02-09
申请号：US13297141
申请日：2011-11-15
申请人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
发明人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
IPC分类号： H01L29/06 , H01L29/778 , H01L29/417 , H01L29/423 , H01L29/20 , H01L23/00
CPC分类号： H01L21/02458 , H01L21/02381 , H01L21/02433 , H01L21/02499 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/4825 , H01L21/565 , H01L23/3114 , H01L23/4952 , H01L23/49562 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/045 , H01L29/154 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/66462 , H01L29/7784 , H01L29/7787 , H01L2224/06051 , H01L2224/451 , H01L2224/48247 , H01L2224/48257 , H01L2224/49111 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/12032 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A nitride semiconductor element includes a Si substrate; a buffer layer including (a) an AlN layer formed on a primary surface of the Si substrate; and (b) an AlGaN deposit layer formed by laminating multiple AlGaN layers on the AlN layer and having a total thickness ranging from 100 nm to 500 nm; a GaN electron transfer layer formed on the AlGaN deposit layer and having a thickness ranging from 500 nm to 2000 nm provided that the GaN electron transfer layer is thicker than the AlGaN deposit layer; and an AlGaN electron supply layer formed on the GaN electron transfer layer, wherein the AlGaN deposit layer includes an AlGaN layer that is provided closer to the AlN layer and has an Al component that ranges from about 40% to about 60%, and a reference AlGaN layer that has an Al component (%) that is lower than that of the AlGaN layer.
摘要翻译：氮化物半导体元件包括Si衬底; 缓冲层，包括（a）形成在所述Si衬底的主表面上的AlN层; 和（b）通过在AlN层上层叠多个AlGaN层并且具有100nm至500nm的总厚度而形成的AlGaN沉积层; 形成在AlGaN沉积层上并且具有500nm至2000nm的厚度的GaN电子转移层，条件是GaN电子转移层比AlGaN沉积层厚; 以及形成在GaN电子转移层上的AlGaN电子供给层，其中AlGaN沉积层包括设置在更靠近AlN层并具有约40％至约60％范围内的Al成分的AlGaN层，以及参考 AlGaN层的Al成分（％）低于AlGaN层的Al成分。

4. 发明申请

US20120119219A1 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE 有权
标题翻译： NITRIDE半导体元件和氮化物半导体封装
公开(公告)号：US20120119219A1
公开(公告)日：2012-05-17
申请号：US13297141
申请日：2011-11-15
申请人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
发明人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
IPC分类号： H01L29/20
CPC分类号： H01L21/02458 , H01L21/02381 , H01L21/02433 , H01L21/02499 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/4825 , H01L21/565 , H01L23/3114 , H01L23/4952 , H01L23/49562 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/045 , H01L29/154 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/66462 , H01L29/7784 , H01L29/7787 , H01L2224/06051 , H01L2224/451 , H01L2224/48247 , H01L2224/48257 , H01L2224/49111 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/12032 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability are provided. On a substrate (41), a buffer layer (44) including an AlN layer (47), a first AlGaN layer (48) (with an average Al component of 50%) and a second AlGaN layer (49) (with an average Al component of 20%) is formed. On the buffer layer (44), an element action layer including a GaN electron transfer layer (45) and an AlGaN electron supply layer (46) is formed. Thus, an HEMT element (3) is constituted.
摘要翻译：提供能够容纳宽范围厚度的GaN电子转移层，以便允许更大的器件设计自由度的氮化物半导体元件和具有优异的耐压性能和可靠性的氮化物半导体元件封装。在衬底（41）上，包括AlN层（47），第一AlGaN层（48）（平均Al成分为50％）和第二AlGaN层（49）（平均值）的缓冲层（44） Al成分为20％）。在缓冲层（44）上，形成包括GaN电子转移层（45）和AlGaN电子供给层（46）的元素作用层。因此，构成HEMT元件（3）。

5. 发明授权

US08405064B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08405064B2
公开(公告)日：2013-03-26
申请号：US13067042
申请日：2011-05-04
申请人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
发明人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
IPC分类号： H01L29/06
CPC分类号： H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/452 , H01L29/475 , H01L29/66462 , H01L29/7787
摘要： An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1
摘要翻译：本发明的氮化物半导体器件包括：衬底; 设置在基板上的第一缓冲层，具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层，并且具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1，第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式（1）：LC1

6. 发明申请

US20110272665A1 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20110272665A1
公开(公告)日：2011-11-10
申请号：US13067042
申请日：2011-05-04
申请人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
发明人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
IPC分类号： H01L29/15
CPC分类号： H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/452 , H01L29/475 , H01L29/66462 , H01L29/7787
摘要： An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1
摘要翻译：本发明的氮化物半导体器件包括：衬底; 设置在基板上的第一缓冲层，具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层，并且具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1，第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式（1）：LC1

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