专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20050280954A1 Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancing layer 有权
标题翻译：具有具有磁致伸缩增强层的多层固定磁性层的磁感测装置
公开(公告)号：US20050280954A1
公开(公告)日：2005-12-22
申请号：US11156678
申请日：2005-06-20
申请人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
发明人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers separated from each other by the nonmagnetic intermediate layer. A first nonmagnetic magnetostriction-enhancing layer is on the pinned magnetic layer and contacts a first thin-film layer placed farthest from the nonmagnetic material layer. At least one of the magnetic thin-film layers has a composite structure with a second nonmagnetic magnetostriction-enhancing layer and magnetic layers separated from each other by the second magnetostriction-enhancing layer. All of the magnetic layers are magnetized in the same direction antiparallel to the adjacent magnetic thin-film layer. At least some crystals of the first and second magnetostriction-enhancing layers and the first thin-film layer/magnetic layers are epitaxial or heteroepitaxial.
摘要翻译：本发明提供一种具有多层材料的磁感测装置，其具有钉扎磁性层，非磁性材料层和自由磁性层。钉扎磁性层是具有非磁性中间层和通过非磁性中间层彼此分离的磁性薄膜层的复合材料。第一非磁性磁致伸缩增强层位于被钉扎的磁性层上，并接触放置在最远离非磁性材料层的第一薄膜层。磁性薄膜层中的至少一个具有与第二非磁致伸缩增强层和由第二磁致伸缩增强层彼此分离的磁性层的复合结构。所有的磁性层在与相邻的磁性薄膜层反平行的相同方向被磁化。第一和第二磁致伸缩增强层和第一薄膜层/磁性层的至少一些晶体是外延或异质外延的。

22. 发明授权

US06921587B2 Magnetic sensing element including second free magnetic layer extending wider than track width and method for fabricating same 有权
标题翻译：磁传感元件包括比轨道宽度更宽的第二自由磁性层及其制造方法
公开(公告)号：US06921587B2
公开(公告)日：2005-07-26
申请号：US10603986
申请日：2003-06-24
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , H01L43/12 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , Y10T428/1143 , Y10T428/12986 , Y10T428/24479
摘要： Disclosed are a CPP magnetic sensing element employing the exchange bias method in which a sensing current is prevented from expanding in the track width direction in the multilayer film while the magnetization of the free magnetic layer is controlled properly, side reading is effectively prevented, and read output is improved, and a method for fabricating the same. First insulating layers are disposed at both sides in the track width direction of a multilayer film, a second free magnetic layer is disposed over the multilayer film and the first insulating layers, and second antiferromagnetic layers are disposed on both side regions of the second free magnetic layer.
摘要翻译：公开了一种使用交换偏置方法的CPP磁感应元件，其中防止在多层膜中的磁道宽度方向上扩大感测电流，同时自由磁性层的磁化得到适当的控制，有效地防止了侧读输出改善，及其制造方法。第一绝缘层设置在多层膜的轨道宽度方向的两侧，第二自由磁性层设置在多层膜和第一绝缘层上，第二反铁磁层设置在第二自由磁体的两侧区域层。

23. 发明申请

US20050157435A1 Spin-valve element having fixed layer containing nano-oxide layer 失效
标题翻译：旋转阀元件具有含有纳米氧化物层的固定层
公开(公告)号：US20050157435A1
公开(公告)日：2005-07-21
申请号：US11034386
申请日：2005-01-12
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39 , H01F10/30 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996
摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.
摘要翻译：使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层）接触层。此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R）电阻和单向交流偏置磁场（Hex *）都可以提高。

24. 发明授权

US06901652B2 Method for manufacturing magnetic sensing element having improved magnetic field sensitivity 有权
标题翻译：具有改善磁场灵敏度的磁传感元件的制造方法
公开(公告)号：US06901652B2
公开(公告)日：2005-06-07
申请号：US10193675
申请日：2002-07-11
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/12 , H01F3/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046
摘要： A method for manufacturing magnetic sensing elements for use in magnetic sensors and hard disks. A ferromagnetic layer and a second antiferromagnetic layer are deposited on a nonmagnetic layer having a uniform thickness. The second antiferromagnetic layer is milled to form an indent. The resulting magnetic sensing element has a free magnetic layer reliably set in a single-magnetic-domain state in the track width direction.
摘要翻译：一种用于制造用于磁传感器和硬盘的磁感应元件的方法。铁磁层和第二反铁磁层沉积在具有均匀厚度的非磁性层上。第二反铁磁层被研磨以形成凹口。所得到的磁传感元件具有在磁道宽度方向上可靠地设定为单磁畴状态的自由磁性层。

25. 发明申请

US20050073777A1 Magnetic head comprising magnetic domain control layer formed on ABS-side of magnetic flux guide for GMR element and method of manufacturing the magnetic head 失效
标题翻译：磁头包括形成在用于GMR元件的磁通引导件的ABS侧上的磁畴控制层和制造磁头的方法
公开(公告)号：US20050073777A1
公开(公告)日：2005-04-07
申请号：US10464708
申请日：2003-06-17
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B5/3932 , G11B2005/3996 , Y10T29/49048
摘要： The present invention provides a magnetic head including a magnetic flux guide layer for effectively inducing an external magnetic field in a free magnetic layer. A magnetic domain control layer is formed in a space below the magnetic flux guide layer and in front of a multilayer film near a surface facing a recording medium. Therefore, the shape of the magnetic flux guide layer can be made substantially flat to improve flux transmission efficiency. Also, the magnetization of the magnetic flux guide layer is controlled by laminating the magnetic flux guide layer on the magnetic domain control layer. Therefore, the magnetic domain control layer can be formed in a substantially flat thin film to stabilize a bias magnetic field to be supplied to the magnetic flux guide layer. Furthermore, the gap length of the magnetic head can be kept short.
摘要翻译：本发明提供一种磁头，其包括用于有效地感应自由磁性层中的外部磁场的磁通引导层。磁畴控制层形成在磁通导向层下面的空间中，并且在面向记录介质的表面附近的多层膜的前方形成。因此，可以使磁通导向层的形状基本平坦化，以提高磁通传输效率。此外，通过在磁畴控制层上层叠磁通引导层来控制磁通引导层的磁化。因此，磁畴控制层可以形成在基本平坦的薄膜中，以稳定供给到磁通导向层的偏置磁场。此外，磁头的间隙长度可以保持较短。

26. 发明授权

US06856494B2 Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers 失效
标题翻译：具有偏置层和铁磁层的旋转阀型薄膜磁性元件
公开(公告)号：US06856494B2
公开(公告)日：2005-02-15
申请号：US09885871
申请日：2001-06-20
申请人： Masahiro Ooshima , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa , Yosuke Ide
发明人： Masahiro Ooshima , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa , Yosuke Ide
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , H01F10/3272 , H01L43/08
摘要： The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.
摘要翻译：本发明提供了一种自旋阀型薄膜磁性元件，其能够通过改善在偏置层和铁磁层之间产生的交换耦合磁场，从而在一个方向上肯定地对准自由磁性层的磁化方向，并且能够将偏置层的厚度减小到比传统的自旋阀型薄膜磁性元件的偏置层的厚度小，以获得与传统的自旋阀型薄膜相同的交换耦合磁性层的大小磁性元件。

27. 发明申请

US20050018363A1 Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer 有权
标题翻译：旋转阀磁阻元件具有包含磁性层和非磁性层的上层叠层的固定磁性层
公开(公告)号：US20050018363A1
公开(公告)日：2005-01-27
申请号：US10925268
申请日：2004-08-24
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide , Masahiro Oshima
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide , Masahiro Oshima
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906 , Y10T29/49034 , Y10T428/1121 , Y10T428/1143
摘要： A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X—Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and atoms forming the non-magnetic metal layer are being aligned with each other, strains are generated in the individual crystal structures. By generating the strain in the crystal structure of the first magnetic layer, the magnetostriction constant λ is increased. As a result, a magnetic sensor having a large magnetoelastic effect can be provided.
摘要翻译：固定磁性层包含形成在非磁性金属层上的第一磁性层。非磁性金属层由X-Mn合金（其中X选自Pt，Pd，Ir，Rh，Ru，Os，Ni和Fe）组成。虽然形成第一磁性层的原子和形成非磁性金属层的原子彼此对准，但在各个晶体结构中产生应变。通过在第一磁性层的晶体结构中产生应变，磁致伸缩常数λ增加。结果，可以提供具有大的磁弹性效应的磁传感器。

28. 发明授权

US06783874B2 Magnetic sensor having second antiferromagnetic layers and two types of electrode layers on free magnetic layer and manufacturing method thereof 失效
标题翻译：磁传感器具有第二反铁磁层和两种类型的自由磁性层上的电极层及其制造方法
公开(公告)号：US06783874B2
公开(公告)日：2004-08-31
申请号：US10405665
申请日：2003-04-02
申请人： Naoya Hasegawa , Eiji Umetsu , Naohiro Ishibashi , Masahiro Oshima
发明人： Naoya Hasegawa , Eiji Umetsu , Naohiro Ishibashi , Masahiro Oshima
IPC分类号： B32B1900
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/1871 , G11B5/3163 , G11B5/3903 , Y10S29/028 , Y10S428/90 , Y10S428/928 , Y10T29/49032 , Y10T29/49052 , Y10T428/1121 , Y10T428/24479
摘要： First electrode layers are formed on second antiferromagnetic layers, and in a step separate from the above, second electrode layers are formed above internal end surfaces of the second antiferromagnetic layers and the first electrode layers and parts of the upper surface of the multilayer film with an additional film provided therebetween. Since the first and the second electrode layers are formed separately, it is not necessary to perform mask alignment twice, and hence an overlap structure can be precisely formed in which the thickness of the second electrode layer at the left side is equivalent to that at the right side.
摘要翻译：在第二反铁磁层上形成第一电极层，在与上述步骤分离的步骤中，第二电极层形成在第二反铁磁层的内端表面上，第一电极层和多层膜的上表面的一部分在其间提供附加膜。由于第一电极层和第二电极层分别形成，因此不需要进行两次掩模对准，因此可以精确地形成重叠结构，其中左侧的第二电极层的厚度等于右边。

29. 发明授权

US06764778B2 Thin film magnetic element with accurately controllable track width and method of manufacturing the same 失效
标题翻译：具有精确可控轨迹宽度的薄膜磁性元件及其制造方法
公开(公告)号：US06764778B2
公开(公告)日：2004-07-20
申请号：US09997910
申请日：2001-10-31
申请人： Masamichi Saito , Naoya Hasegawa , Toshihiro Kuriyama , Eiji Umetsu , Kenichi Tanaka , Yosuke Ide
发明人： Masamichi Saito , Naoya Hasegawa , Toshihiro Kuriyama , Eiji Umetsu , Kenichi Tanaka , Yosuke Ide
IPC分类号： G11B527
CPC分类号： B82Y25/00 , B82Y10/00 , G11B2005/3996 , H01F10/3268 , H01F41/325 , Y10T428/1121 , Y10T428/1171
摘要： A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the longitudinal bias layer and the regions of the free magnetic layer which are located directly below both ends D of the longitudinal bias layer. Therefore, a thin film magnetic element can be provided, in which the width dimension of a recess formed in the longitudinal bias layer coincides with the magnetic track width.
摘要翻译：纵向偏置层层叠在自由磁性层之上，其间设有非磁性层，使得自由磁性层的磁化方向取向为与纵向偏置层的RKKY相互作用。 RKKY相互作用仅在纵向偏置层和位于纵向偏置层的两端D正下方的自由磁性层的区域之间发生。因此，可以提供薄膜磁性元件，其中形成在纵向偏置层中的凹部的宽度尺寸与磁道宽度一致。

30. 发明授权

US06346338B1 Combination magnetoresistive/inductive thin film magnetic head and its manufacturing method 有权
标题翻译：组合磁阻/感应薄膜磁头及其制造方法
公开(公告)号：US06346338B1
公开(公告)日：2002-02-12
申请号：US09685435
申请日：2000-10-10
申请人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Kobayashi , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
发明人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Kobayashi , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
IPC分类号： G11B539
CPC分类号： G11B5/3967 , G11B5/112 , G11B5/3106 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/3163 , G11B5/3903 , H01F10/131 , H01F10/265 , Y10S428/90 , Y10T428/1143 , Y10T428/1171 , Y10T428/12465 , Y10T428/12472 , Y10T428/12576 , Y10T428/1259 , Y10T428/1266 , Y10T428/12674 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12931
摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.
摘要翻译：薄膜磁头包括由Fe-Mo合金，Fe-MTO合金或NI-Fe-X合金制成的上芯层和下芯层，使得上芯层具有高的饱和磁通量密度低，矫顽力低，电阻率高，下芯层具有比上芯层低的饱和磁通密度，低矫顽力，高电阻率和低磁致伸缩常数。此外，下芯层形成为使得厚度朝向两个侧端逐渐减小，并且可以在下芯层上形成间隙层以具有均匀的厚度。由于通过溅射形成下芯层，因此可以使用具有优异的软磁性材料的材料，从而能够以高频进行记录。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式