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1. 发明授权

US06856494B2 Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers 失效
标题翻译：具有偏置层和铁磁层的旋转阀型薄膜磁性元件
公开(公告)号：US06856494B2
公开(公告)日：2005-02-15
申请号：US09885871
申请日：2001-06-20
申请人： Masahiro Ooshima , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa , Yosuke Ide
发明人： Masahiro Ooshima , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa , Yosuke Ide
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , H01F10/3272 , H01L43/08
摘要： The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.
摘要翻译：本发明提供了一种自旋阀型薄膜磁性元件，其能够通过改善在偏置层和铁磁层之间产生的交换耦合磁场，从而在一个方向上肯定地对准自由磁性层的磁化方向，并且能够将偏置层的厚度减小到比传统的自旋阀型薄膜磁性元件的偏置层的厚度小，以获得与传统的自旋阀型薄膜相同的交换耦合磁性层的大小磁性元件。

2. 发明授权

US06757962B2 Method for manufacturing exchange bias type magnetic field sensing element 失效
标题翻译：交换偏置型磁场感应元件的制造方法
公开(公告)号：US06757962B2
公开(公告)日：2004-07-06
申请号：US10013242
申请日：2001-12-10
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
IPC分类号： H04R3100
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3967 , H01F41/308 , H01F41/325 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic layer not covered with the electrode layer and a portion of the first free magnetic layer are removed using the electrode layer as a mask after laminating each layer to form a bottom type spin-valve thin film magnetic element, thereby enabling the first free magnetic layer to be endowed with a sufficient exchange coupling magnetic field by substantially eliminating the tapered portion of the remaining second antiferromagnetic layer thereby enabling the magnetization of the second free magnetic layer to be put into a single domain state.
摘要翻译：在制造磁场感测元件的方法中，包括覆盖第二反铁磁层的电极层和第一自由磁性层，其中电极层暴露第二磁性层的一部分，第二反铁磁层的一部分未被电极覆盖在层叠各层之后，使用电极层作为掩模去除第一自由磁性层的一部分和第一自由磁性层的一部分，从而形成底部型自旋阀薄膜磁性元件，从而能够赋予第一自由磁性层充分的交换通过基本上消除剩余的第二反铁磁性层的锥形部分来耦合磁场，从而使得第二自由磁性层的磁化能够进入单一畴状态。

3. 发明授权

US08009391B2 Magnetic sensing element and method for manufacturing the same 有权
标题翻译：磁传感元件及其制造方法
公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

4. 发明申请

US20080074805A1 TUNNEL MAGNETORESISTIVE SENSOR IN WHICH AT LEAST PART OF PINNED LAYER IS COMPOSED OF CoFeB LAYER AND METHOD FOR MANUFACTURING THE TUNNEL MAGNETORESISTIVE SENSOR 有权
标题翻译：隧道磁体传感器，其中紧固层的至少一部分由CoFeB层组成，以及制造隧道磁传感器的方法
公开(公告)号：US20080074805A1
公开(公告)日：2008-03-27
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译：隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

5. 发明授权

US07969693B2 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor 有权
标题翻译：隧道磁阻传感器，其中至少部分被钉扎层由CoFeB层组成，隧道磁阻传感器的制造方法
公开(公告)号：US07969693B2
公开(公告)日：2011-06-28
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译：隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

6. 发明申请

US20080285180A1 MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磁感应元件及其制造方法
公开(公告)号：US20080285180A1
公开(公告)日：2008-11-20
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

7. 发明授权

US06893734B2 Magnetic sensing element with improved sensitivity and method for making the same 失效
标题翻译：具有改进灵敏度的磁感应元件及其制造方法
公开(公告)号：US06893734B2
公开(公告)日：2005-05-17
申请号：US10017301
申请日：2001-12-14
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , Y10T428/1171 , Y10T428/12465 , Y10T428/12646 , Y10T428/12931 , Y10T428/12986 , Y10T428/24479 , Y10T428/265
摘要： A magnetic sensing element includes a laminate, the laminate including a first antiferromagnetic layer; a pinned magnetic layer, the magnetization direction thereof being pinned by the first antiferromagnetic layer; a nonmagnetic conductive layer; a free magnetic layer, the magnetization direction thereof being variable in response to an external magnetic field; a nonmagnetic interlayer; a ferromagnetic layer; and a second antiferromagnetic layer. The laminate has a recess extending through the second antiferromagnetic layer and the ferromagnetic layer, a bottom face of the recess lying in the nonmagnetic interlayer, the width of the bottom face in a track width direction being equal to a track width. The free magnetic layer is magnetized in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer as a result of magnetic coupling with the ferromagnetic layer. A method for making such a magnetic sensing element is also disclosed.
摘要翻译：磁传感元件包括层压体，层压体包括第一反铁磁性层; 被钉扎的磁性层，其磁化方向由第一反铁磁层固定; 非磁性导电层; 自由磁性层，其磁化方向响应于外部磁场而变化; 非磁性中间层; 铁磁层; 和第二反铁磁层。层压体具有延伸穿过第二反铁磁层和铁磁层的凹部，位于非磁性中间层中的凹部的底面，轨道宽度方向上的底面的宽度等于轨道宽度。由于与铁磁层的磁耦合，自由磁性层在与被钉扎的磁性层的磁化方向大致正交的方向上被磁化。还公开了一种用于制造这种磁传感元件的方法。

8. 发明授权

US06764778B2 Thin film magnetic element with accurately controllable track width and method of manufacturing the same 失效
标题翻译：具有精确可控轨迹宽度的薄膜磁性元件及其制造方法
公开(公告)号：US06764778B2
公开(公告)日：2004-07-20
申请号：US09997910
申请日：2001-10-31
申请人： Masamichi Saito , Naoya Hasegawa , Toshihiro Kuriyama , Eiji Umetsu , Kenichi Tanaka , Yosuke Ide
发明人： Masamichi Saito , Naoya Hasegawa , Toshihiro Kuriyama , Eiji Umetsu , Kenichi Tanaka , Yosuke Ide
IPC分类号： G11B527
CPC分类号： B82Y25/00 , B82Y10/00 , G11B2005/3996 , H01F10/3268 , H01F41/325 , Y10T428/1121 , Y10T428/1171
摘要： A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the longitudinal bias layer and the regions of the free magnetic layer which are located directly below both ends D of the longitudinal bias layer. Therefore, a thin film magnetic element can be provided, in which the width dimension of a recess formed in the longitudinal bias layer coincides with the magnetic track width.
摘要翻译：纵向偏置层层叠在自由磁性层之上，其间设有非磁性层，使得自由磁性层的磁化方向取向为与纵向偏置层的RKKY相互作用。 RKKY相互作用仅在纵向偏置层和位于纵向偏置层的两端D正下方的自由磁性层的区域之间发生。因此，可以提供薄膜磁性元件，其中形成在纵向偏置层中的凹部的宽度尺寸与磁道宽度一致。

9. 发明授权

US07599155B2 Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path 有权
标题翻译：具有反铁磁膜的自固定CPP巨磁阻磁头，不存在电流路径
公开(公告)号：US07599155B2
公开(公告)日：2009-10-06
申请号：US10823474
申请日：2004-04-13
申请人： Masamichi Saito , Yoshihiro Nishiyama , Yosuke Ide , Eiji Umetsu , Naoya Hasegawa , Yasuo Hayakawa
发明人： Masamichi Saito , Yoshihiro Nishiyama , Yosuke Ide , Eiji Umetsu , Naoya Hasegawa , Yasuo Hayakawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/3163 , G11B5/398
摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.
摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层层。在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸。此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

10. 发明授权

US07045224B2 Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same 失效
标题翻译：磁性检测元件具有在磁道宽度方向上具有预定空间的反铁磁膜及其制造方法
公开(公告)号：US07045224B2
公开(公告)日：2006-05-16
申请号：US10675435
申请日：2003-09-30
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193
摘要： The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized. Furthermore, a magnetic detecting element with high resistance to electrostatic damage (ESD) can be manufactured. Thus, a magnetic detecting element adaptable for a future higher recording density can be provided.
摘要翻译：本发明提供了一种磁检测元件，其包括钉扎磁性层和构成交换耦合膜的第一反铁磁层，其结构被优化以适当地钉扎钉扎磁性层的磁化，提高再生产量并适当地符合较窄的间隙，以及制造磁检测元件的方法。钉扎磁性层具有合成亚铁磁性结构，第一反铁磁性层具有形成在轨道宽度方向中心的预定空间C，仅在第一反铁磁性层与第一磁性层的两侧部之间产生交换耦合磁场的固定磁性层。因此，可以使被钉扎的磁性层的磁化被固定，并且可以实现再现输出和间隙变窄的改善。此外，可以制造具有高抗静电损伤（ESD）的磁性检测元件。因此，可以提供适用于将来更高记录密度的磁检测元件。

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