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21. 发明授权

US08930173B2 Vehicle behavior estimation device 有权
标题翻译：车辆行为估计装置
公开(公告)号：US08930173B2
公开(公告)日：2015-01-06
申请号：US13158630
申请日：2011-06-13
申请人： Takuro Ikeda , Eiji Kitagawa
发明人： Takuro Ikeda , Eiji Kitagawa
IPC分类号： G06G7/48 , G05B17/02 , G08G1/01
CPC分类号： G05B17/02 , G08G1/01
摘要： A vehicle behavior estimation device includes: a storage unit configured to store a restriction condition at a point of a vehicle for which behavior is estimated; vehicle state data that includes position information and speed information of the vehicle; behavior parameters that include speed information and acceleration information of the vehicle; and physical restriction conditions that include an upper limit and a lower limit of the acceleration information; and a processor configured to obtain the vehicle state data by using the restriction condition at the point; calculate behavior parameters of a vehicle model that satisfy a physical restriction condition from the vehicle state data and the restriction condition at the point; update the vehicle state data of the vehicle model based on the behavior parameters; and repeat processing to calculate behavior parameters by using the updated vehicle state data and to update the vehicle state data.
摘要翻译：车辆行为估计装置包括：存储单元，被配置为在估计行为的车辆的某一点处存储限制条件; 车辆状态数据，其包括车辆的位置信息和速度信息; 包括车辆的速度信息和加速度信息的行为参数; 以及包括加速度信息的上限和下限的物理限制条件; 以及处理器，被配置为通过使用该点处的限制条件来获得车辆状态数据; 从车辆状态数据和该点的限制条件计算满足物理限制条件的车辆模型的行为参数; 基于行为参数来更新车辆模型的车辆状态数据; 并且通过使用更新的车辆状态数据来重复处理以计算行为参数并更新车辆状态数据。

22. 发明授权

US08750030B2 Magnetoresistive element and magnetic random access memory 有权
标题翻译：磁阻元件和磁性随机存取存储器
公开(公告)号：US08750030B2
公开(公告)日：2014-06-10
申请号：US13236589
申请日：2011-09-19
申请人： Koji Ueda , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Hiroaki Yoda
发明人： Koji Ueda , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括电极层，第一磁性层，第二磁性层和非磁性层。电极层包括包括Mo，Nb和W中的至少一种的金属层。第一磁性层设置在与金属层接触的金属层上，并且在垂直于膜的方向上具有易磁化轴平面，并且在磁化方向上是可变的。第二磁性层设置在第一磁性层上，并且在垂直于膜平面的方向上具有易磁化轴，并且在磁化方向上是不变的。非磁性层设置在第一和第二磁性层之间。第一磁性层的磁化方向由穿过第一磁性层，非磁性层和第二磁性层的电流而变化。

23. 发明申请

US20130307099A1 MAGNETIC MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁记忆元件及其制造方法
公开(公告)号：US20130307099A1
公开(公告)日：2013-11-21
申请号：US13729297
申请日：2012-12-28
申请人： Eiji KITAGAWA , Chikayoshi Kamata , Saori Kashiwada , Yushi Kato , Tadaomi Daibou
发明人： Eiji KITAGAWA , Chikayoshi Kamata , Saori Kashiwada , Yushi Kato , Tadaomi Daibou
IPC分类号： H01L29/82 , H01L29/66
CPC分类号： H01L29/82 , H01L29/66007 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.
摘要翻译：根据一个实施例，磁存储元件包括具有第一表面和与第一表面相对的第二表面的第一磁性层，第二磁性层，设置在第一磁性层的第一表面和第二磁性层，设置在第一磁性层的第二表面上的层，含有B的层和选自Hf，Al和Mg的至少一种元素，以及设置在第一磁性层的侧壁上的绝缘层中间层，所述绝缘层含有选自所述层中所含的Hf，Al和Mg中的至少一种元素。

24. 发明授权

US08547737B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08547737B2
公开(公告)日：2013-10-01
申请号：US13628724
申请日：2012-09-27
申请人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
发明人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.
摘要翻译：根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜第一界面磁性膜和第二界面磁性膜。

25. 发明申请

US20130056349A1 SPUTTERING TARGET AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING THE SAME 审中-公开
标题翻译：溅射目标和使用其制造磁记忆的方法
公开(公告)号：US20130056349A1
公开(公告)日：2013-03-07
申请号：US13600812
申请日：2012-08-31
申请人： Eiji KITAGAWA , Tadaomi DAIBOU , Kenji NOMA , Tadashi KAI , Koji YAMAKAWA , Toshihiko NAGASE , Katsuya NISHIYAMA , Koji UEDA , Daisuke WATANABE , Hiroaki YODA , Satoru SANO , Yoshihiro NISHIMURA , Takayuki WATANABE , Yuzo KATO , Akira UEKI
发明人： Eiji KITAGAWA , Tadaomi DAIBOU , Kenji NOMA , Tadashi KAI , Koji YAMAKAWA , Toshihiko NAGASE , Katsuya NISHIYAMA , Koji UEDA , Daisuke WATANABE , Hiroaki YODA , Satoru SANO , Yoshihiro NISHIMURA , Takayuki WATANABE , Yuzo KATO , Akira UEKI
IPC分类号： C23C14/08 , C23C14/35
CPC分类号： C23C14/082 , C23C14/3414 , G11C11/161 , H01L27/228 , H01L43/12
摘要： Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.
摘要翻译：提供一种溅射靶，其包括具有MgO作为主要成分并且厚度为3mm以下的靶主体10以及使用该溅射靶的磁性存储器的制造方法，其提高MR比。

26. 发明申请

US20130028011A1 MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY 有权
标题翻译：磁性器件和磁性存储器
公开(公告)号：US20130028011A1
公开(公告)日：2013-01-31
申请号：US13424769
申请日：2012-03-20
申请人： Eiji KITAGAWA , Naoharu SHIMOMURA , Hiroaki Yoda , Junichi ITO , Minoru AMANO , Chikayoshi KAMATA , Keiko ABE
发明人： Eiji KITAGAWA , Naoharu SHIMOMURA , Hiroaki Yoda , Junichi ITO , Minoru AMANO , Chikayoshi KAMATA , Keiko ABE
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
摘要翻译：实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

27. 发明申请

US20130010532A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME 有权
公开(公告)号：US20130010532A1
公开(公告)日：2013-01-10
申请号：US13427732
申请日：2012-03-22
申请人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
发明人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
IPC分类号： G11C11/15 , H01L29/82 , B82Y99/00
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

28. 发明申请

US20130001713A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME 有权
标题翻译：磁性元件和使用它的磁记忆
公开(公告)号：US20130001713A1
公开(公告)日：2013-01-03
申请号：US13424072
申请日：2012-03-19
申请人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
发明人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。第三和第四磁性层具有与存储层的磁化反平行的磁化。第二非磁性层位于存储和第三磁性层之间。第三非磁性层位于参考和第四磁性层之间。第四磁性层的厚度小于第三磁性层的厚度。

29. 发明授权

US08305801B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08305801B2
公开(公告)日：2012-11-06
申请号：US13043064
申请日：2011-03-08
申请人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
发明人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.
摘要翻译：根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜第一界面磁性膜和第二界面磁性膜。

30. 发明授权

US08299552B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08299552B2
公开(公告)日：2012-10-30
申请号：US12233100
申请日：2008-09-18
申请人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Katsuya Nishiyama , Tadaomi Daibou , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Katsuya Nishiyama , Tadaomi Daibou , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01L27/228
摘要： A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.
摘要翻译：磁阻元件包括具有NaCl结构并且包含在（001）面中取向的氮化物的第一下层，具有垂直于膜表面的具有L10结构的磁各向异性的第一下层上的第一磁性层，以及含有在（001）面取向的铁磁性合金，设置在第一磁性层上的第一非磁性层和设置在第一非磁性层上并具有垂直于膜表面的磁各向异性的第二磁性层。

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