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    • 25. 发明申请
    • Sputtering Magnetron
    • 溅射磁控管
    • US20080190765A1
    • 2008-08-14
    • US11914935
    • 2005-06-04
    • Andreas LoppManfred Ruske
    • Andreas LoppManfred Ruske
    • C23C14/35
    • H01J37/3408
    • The invention relates to a magnetron with a planar target and a planar magnet system. The planar magnet system comprises a bar-shaped first magnet pole with enlarged ends and a frame-shaped second magnet pole, wherein a relative movement between the magnet poles and the target is such that every point of the magnet system moving with the target being stationary moves on a circular path. If the magnet system is stationary, each point of the target moves on such a circular path. During the relative movement with respect to one another the magnet system and the target are in parallel planes. The diameter of the circular path corresponds to the mean distance between two parallel arms of a plasma tube, which during the sputter operation develops between the first and the second magnet pole. Thereby that the magnets in the curve region of the plasma tube are disposed such that the pole lines form at this site a circle arc or a circular area, holes in the target are avoided.
    • 本发明涉及一种具有平面靶材和平面磁体系统的磁控管。 平面磁体系统包括具有扩大端部的棒状第一磁极和框状的第二磁极,其中磁极和靶之间的相对移动使得磁体系统中的每个点随着目标静止而移动 在圆形路径上移动。 如果磁体系统是静止的,则目标的每个点在这样的圆形路径上移动。 在相对于彼此的相对运动期间,磁体系统和目标处于平行平面。 圆形路径的直径对应于等离子体管的两个平行臂之间的平均距离,其在溅射操作期间在第一和第二磁极之间产生。 由此,等离子体管的曲线区域中的磁体被布置成使得极点在该位置处形成圆弧或圆形区域,从而避免了靶中的孔。