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11. 发明授权

EP0631320B1 High voltage semiconductor structure 失效
标题翻译：高电压半导体结构
公开(公告)号：EP0631320B1
公开(公告)日：1998-11-04
申请号：EP94109691.9
申请日：1994-06-23
申请人： MOTOROLA, INC.
发明人： Tu, Shang-Hui
IPC分类号： H01L29/06
CPC分类号： H01L29/0619 , Y10S257/927

12. 发明公开

EP0087979A2 A semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：EP0087979A2
公开(公告)日：1983-09-07
申请号：EP83301104.2
申请日：1983-03-02
申请人： FUJITSU LIMITED
发明人： Aoyama, Keizo , Yamauchi, Takahiko , Seki, Teruo
IPC分类号： H01L27/10 , G11C11/40
CPC分类号： G11C5/063 , G11C5/005 , G11C5/14 , G11C11/4125 , H01L23/556 , H01L27/1112 , H01L2924/0002 , Y10S257/927 , H01L2924/00
摘要： A static-type semiconductor memory device having a three-layer structure; the gate-electrode wiring lines being formed by a first conductive layer of, for example, polycrystalline silicon; the word lines, the ground lines, and the power supply lines being formed by a second conductive layer of, for example, aluminum; and the bit lines being formed by a third conductive layer of, for example, aluminum; the bit lines extending in a column direction, and the ground lines extending in a row direction; whereby an improved integration degree, an improved operating speed, an improved manufacturing yield, and a countermeasure for soft errors due to alpha particles are attained.
摘要翻译：一种具有三层结构的静态型半导体存储器件; 栅电极布线由例如多晶硅的第一导电层形成; 字线，地线和电源线由例如铝的第二导电层形成; 并且位线由例如铝的第三导电层形成; 位线沿列方向延伸，地线沿行方向延伸; 由此获得改进的集成度，改进的操作速度，改进的制造良率以及由α粒子引起的软误差的对策。

13. 发明申请

WO2004066397A2 DESIGN AND FABRICATION OF RUGGED FRED 审中-公开
标题翻译：设计和制造摧毁FRED
公开(公告)号：WO2004066397A2
公开(公告)日：2004-08-05
申请号：PCT/US2004/001060
申请日：2004-01-14
申请人： ADVANCED POWER TECHNOLOGY, INC. , ZHAO, Shanqi , SDRULLA, Dumitu
发明人： ZHAO, Shanqi , SDRULLA, Dumitu
IPC分类号： H01L29/861
CPC分类号： H01L29/66136 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/417 , H01L29/861 , H01L29/8611 , Y10S257/927
摘要： An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.
摘要翻译：改进的快速恢复二极管包括主PN结，其限定用于在正向方向传导高电流的中心导电区域和围绕中心导电区域的外围场扩散区域，用于阻止相反方向的高电压。主PN结的雪崩电压等于或低于外围场扩散区域的雪崩电压，因此基本上整个所述主PN结参与雪崩传导。这种坚固的FRED结构也可以形成在MOSFET，IGBTS等中。

14. 发明申请

WO99040630A3 SEMICONDUCTOR DEVICE WITH A BIPOLAR TRANSISTOR, AND METHOD OF MANUFACTURING SUCH A DEVICE 审中-公开
标题翻译：具有双极晶体管的半导体器件及其制造方法
公开(公告)号：WO99040630A3
公开(公告)日：1999-10-28
申请号：PCT/IB1999/000171
申请日：1999-01-28
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/10 , H01L29/732 , H01L29/36
CPC分类号： H01L29/1004 , H01L29/7322 , Y10S257/927 , Y10S257/928
摘要： The invention relates to a semiconductor device comprising a preferably discrete bipolar transistor with a collector region (1), a base region (2), and an emitter region (3) which are provided with connection conductors (6, 7, 8). A known means of preventing a saturation of the transistor is that the latter is provided with a Schottky clamping diode. The latter is formed in that case in that the connection conductor (7) of the base region (2) is also put into contact with the collector region (1). In a device according to the invention, the second connection conductor (7) is exclusively connected to the base region (2), and a partial region (2B) of that portion (2A) of the base region (2) which lies outside the emitter region (3) and comprises a smaller flux of dopant atoms. The bipolar transistor in a device according to the invention is provided with a pn clamping diode which is formed between the partial region (2B) and the collector region (1). Such a device has excellent properties, such as a short switching time (ts) and a saturation collector-emitter voltage (VCEsat) which is not too high, while having a low, non-variable and well reproducible leakage current, unlike the known device. In a favourable modification, a region (4) provided simultaneously with the emitter region (3) is present between the partial region (2B) and the second connection conductor (7).
摘要翻译：本发明涉及一种半导体器件，其包括具有集电极区域（1），基极区域（2）和设置有连接导体（6,7,8）的发射极区域（3））的优选分立的双极晶体管。防止晶体管饱和的已知方法是后者具有肖特基钳位二极管。在这种情况下，后者形成为基部区域（2）的连接导体（7）也与集电区（1）接触。在根据本发明的装置中，第二连接导体（7）专门连接到基部区域（2），并且基部区域（2）的部分（2A）的局部区域（2B）位于发射极区域（3）并且包括较小的掺杂剂原子通量。根据本发明的器件中的双极晶体管设置有形成在部分区域（2B）和集电极区域（1）之间的pn钳位二极管。这种器件具有优异的性能，例如开关时间短（ts）和饱和集电极 - 发射极电压（VCEsat），其不是太高，而具有低的，不可变的和良好重现的漏电流，与已知的器件不同。在有利的变型中，与发射极区（3）同时设置的区域（4）存在于部分区域（2B）和第二连接导体（7）之间。

15. 发明申请

WO03100871A2 PHOTODIODE 审中-公开
标题翻译：光电二极管
公开(公告)号：WO03100871A2
公开(公告)日：2003-12-04
申请号：PCT/EP0305378
申请日：2003-05-22
申请人： FRAUNHOFER GES FORSCHUNG , HEHEMANN INGO , KEMNA ARMIN
发明人： HEHEMANN INGO , KEMNA ARMIN
IPC分类号： H01L31/04 , H01L27/144 , H01L27/146 , H01L27/15 , H01L31/0352 , H01L31/103 , H01L31/101
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927
摘要： Disclosed is a photodiode comprising a semiconductor substrate (12) that is provided with a photosensitive area (18, 24) which encompasses a space charge region (18) generating a portion of a diffusion current and a diffusion region (24) generating another portion of a diffusion current, and an insulating device (20) which at least partly delimits the diffusion region relative to an adjacent surrounding area of the semiconductor substrate. In order to lower the reduction in the photodiode bandwidth caused by the diffusion current blurring the response of the photodiode, the semiconductor substrate is provided with an insulating device which delimits the diffusion region relative to the surrounding semiconductor substrate, thereby reducing the number of charge carriers that contribute to the diffusion rate because the diffusion region in which the diffusing charge carriers are produced is reduced and because the diffusing charge carriers produced in the reduced diffusion region are sucked up by the insulating device such that said diffusing charge carriers do not contribute to the photocurrent.
摘要翻译：的光电二极管，其包括除了半导体衬底（12）和具有一个空间电荷区的区域（18），用于产生在一个扩散电流部分，绝缘装置（20）产生的扩散电流部分和一个扩散区（24）的感光区域（18，24）在半导体衬底中用于至少部分地限制相对于所述半导体基板的相邻周围区域扩散区的半导体衬底。由扩散电流的光电二极管的响应的拖尾在光电二极管的带宽的降低被绝缘手段缓和在半导体衬底中，其中相对于周围的半导体衬底，从而在一方面扩散区界定提供有助于扩散比例的载体由减少的数量该扩散区域，在其中产生扩散的载流子，被减小，并且在由生成扩散载流子是在由隔离装置“吸气”减小的扩散区域，因此，因为它们不与光电流贡献的事实另一方面。

16. 发明申请

WO1993017461A1 BIPOLAR JUNCTION TRANSISTOR EXHIBITING SUPPRESSED KIRK EFFECT 审中-公开
标题翻译：双极性晶体管显示抑制KIRK效应
公开(公告)号：WO1993017461A1
公开(公告)日：1993-09-02
申请号：PCT/US1993001203
申请日：1993-02-10
申请人： MICROUNITY SYSTEMS ENGINEERING, INC.
发明人： MICROUNITY SYSTEMS ENGINEERING, INC. , MATTHEWS, James, A.
IPC分类号： H01L29/72
CPC分类号： H01L29/66272 , H01L21/8249 , H01L29/0826 , Y10S257/927
摘要： A bipolar junction transistor (BJT) which exhibits a suppressed Kirk Effect comprises a lightly-doped n-type collector region (11) formed above a more heavily-doped n+ layer (12). Directly above the collector is a p-type base which has an extrinsic region (17) disposed laterally about an intrinsic region (18). An n+ emitter (20) is positioned directly above the intrinsic base region. The BJT also includes a localized n+ region (15) disposed directly beneath the intrinsic base region which significantly increases the current handling capabilities of the transistor.
摘要翻译：显示抑制Kirk效应的双极结型晶体管（BJT）包括形成在更重掺杂的n +层（12）上方的轻掺杂的n型集电极区域（11）。集电极的正上方是p型基体，其具有围绕本征区域横向设置的非本征区域（17）。 n +发射极（20）位于本征基极区的正上方。 BJT还包括直接位于本征基极区下方的局部n +区（15），这显着增加了晶体管的电流处理能力。

17. 发明申请

WO2004066397A3 RUGGED FRED AND FABRICATION 审中-公开
标题翻译：制冷和制造
公开(公告)号：WO2004066397A3
公开(公告)日：2004-10-28
申请号：PCT/US2004001060
申请日：2004-01-14
申请人： ADVANCED POWER TECHNOLOGY , ZHAO SHANQI , SDRULLA DUMITU
发明人： ZHAO SHANQI , SDRULLA DUMITU
IPC分类号： H01L21/329 , H01L29/06 , H01L29/417 , H01L29/861
CPC分类号： H01L29/66136 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/417 , H01L29/861 , H01L29/8611 , Y10S257/927
摘要： An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.
摘要翻译：改进的快速恢复二极管包括主PN结，其限定用于在正向方向传导高电流的中心导电区域和围绕中心导电区域的外围场扩散区域，用于阻止相反方向的高电压。主PN结的雪崩电压等于或低于外围场扩散区域的雪崩电压，因此基本上整个所述主PN结参与雪崩传导。这种坚固的FRED结构也可以形成在MOSFET，IGBTS等中。

18. 发明申请

WO9940630A2 SEMICONDUCTOR DEVICE WITH A BIPOLAR TRANSISTOR, AND METHOD OF MANUFACTURING SUCH A DEVICE 审中-公开
标题翻译：具有双极晶体管的半导体器件及其制造方法
公开(公告)号：WO9940630A2
公开(公告)日：1999-08-12
申请号：PCT/IB9900171
申请日：1999-01-28
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS SVENSKA AB
发明人： HURKX GODEFRIDUS A M , SCHLIGTENHORST HOLGER , SIEVERS BERND
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/10 , H01L29/732
CPC分类号： H01L29/1004 , H01L29/7322 , Y10S257/927 , Y10S257/928
摘要： The invention relates to a semiconductor device comprising a preferably discrete bipolar transistor with a collector region (1), a base region (2), and an emitter region (3) which are provided with connection conductors (6, 7, 8). A known means of preventing a saturation of the transistor is that the latter is provided with a Schottky clamping diode. The latter is formed in that case in that the connection conductor (7) of the base region (2) is also put into contact with the collector region (1). In a device according to the invention, the second connection conductor (7) is exclusively connected to the base region (2), and a partial region (2B) of that portion (2A) of the base region (2) which lies outside the emitter region (3), as seen in projection, lying below the second connection conductor (7) is given a smaller flux of dopant atoms. The bipolar transistor in a device according to the invention is provided with a pn clamping diode which is formed between the partial region (2B) and the collector region (1). Such a device has excellent properties, such as a short switching time (ts) and a saturation collector-emitter voltage (VCEsat) which is not too high, while having a low, non-variable and well reproducible leakage current, unlike the known device. The reduced flux of dopant atoms of the partial region (2B) is preferably realized in that the partial region (2B) is given a smaller doping concentration and/or thickness than the remainder (2A) of the portion of the base region (2) which lies outside the emitter region (3). In a favourable modification, a region (4) provided simultaneously with the emitter region (3) is present between the partial region (2B) and the second connection conductor (7).
摘要翻译：本发明涉及一种半导体器件，其包括具有集电极区域（1），基极区域（2）和设置有连接导体（6,7,8）的发射极区域（3））的优选分立的双极晶体管。防止晶体管饱和的已知方法是后者具有肖特基钳位二极管。在这种情况下，后者形成为基部区域（2）的连接导体（7）也与集电区（1）接触。在根据本发明的装置中，第二连接导体（7）专门连接到基部区域（2），并且基部区域（2）的部分（2A）的局部区域（2B）位于发射极区域（3），如在投影中所看到的，位于第二连接导体（7）下方的给定较小的掺杂剂原子通量。根据本发明的器件中的双极晶体管设置有形成在部分区域（2B）和集电极区域（1）之间的pn钳位二极管。这种器件具有优异的性能，例如开关时间短（ts）和饱和集电极 - 发射极电压（VCEsat），其不是太高，而具有低的，不可变的和良好重现的漏电流，与已知的器件不同。优选地，实现部分区域（2B）的掺杂剂原子的减小的通量，其中部分区域（2B）被给予比基极区域（2）的部分的其余部分（2A）更小的掺杂浓度和/或厚度，其位于发射极区域（3）的外部。在有利的变型中，与发射极区域（3）同时设置的区域（4）存在于部分区域（2B）和第二连接导体（7）之间。

19. 发明申请

US20070096237A1 DESIGN AND FABRICATION OF RUGGED FRED, POWER MOSFET OR IGBT 有权
标题翻译：铷格栅，功率MOSFET或IGBT的设计和制造
公开(公告)号：US20070096237A1
公开(公告)日：2007-05-03
申请号：US11614897
申请日：2006-12-21
申请人： Shanqi Zhao , Dumitru Sdrulla
发明人： Shanqi Zhao , Dumitru Sdrulla
IPC分类号： H01L31/107
CPC分类号： H01L29/66136 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/417 , H01L29/861 , H01L29/8611 , Y10S257/927
摘要： An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.
摘要翻译：改进的快速恢复二极管包括主PN结，其限定用于在正向方向传导高电流的中心导电区域和围绕中心导电区域的外围场扩散区域，用于阻止相反方向的高电压。主PN结的雪崩电压等于或低于外围场扩散区域的雪崩电压，因此基本上整个所述主PN结参与雪崩传导。这种坚固的FRED结构也可以形成在MOSFET，IGBTS等中。

20. 发明授权

US07141833B2 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US07141833B2
公开(公告)日：2006-11-28
申请号：US10993588
申请日：2004-11-19
申请人： Ingo Hehemann , Armin Kemna
发明人： Ingo Hehemann , Armin Kemna
IPC分类号： H01L31/0328
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927
摘要： Apart from a semiconductor substrate and a photosensitive region in the semiconductor substrate, which comprises a space charge zone region for generating a diffusion current portion and a diffusion region for generating a diffusion current portion, a photodiode includes an insulation means in the semiconductor substrate for at least partially confining the diffusion region against an adjacent surrounding region of the semiconductor substrate. The reduction of the bandwidth of photodiodes by the smearing of the response of the photodiode by the diffusion current is alleviated by providing an insulation means in the semiconductor substrate, which confines the diffusion region against the surrounding semiconductor substrate and hereby on the one hand reduces the number of charge carriers contributing to the diffusion portion by reducing the diffusion region, in which the diffusing charge carriers are generated, and on the other hand by “sucking off” diffusing charge carriers generated in the shrunk diffusion region by the insulation means, which is why same do not contribute to the photocurrent.
摘要翻译：除了半导体衬底和半导体衬底中的感光区域之外，光电二极管包括用于产生扩散电流部分的用于产生扩散电流部分的空间电荷区域和扩散区域，光电二极管包括在半导体衬底中的绝缘装置至少部分地限制扩散区域抵靠半导体衬底的相邻周围区域。通过在半导体衬底中提供绝缘装置，通过扩散电流对光电二极管的响应的污染来减小光电二极管的带宽，从而将扩散区域限制在周围的半导体衬底上，从而一方面减少通过减少其中产生扩散电荷载流子的扩散区域而造成扩散部分的电荷载流子数量，另一方面是通过绝缘装置“缩小”扩散在收缩扩散区域中产生的电荷载流子为什么同样没有贡献光电流。

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