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11. 发明申请

US20100237232A1 Apparatus & method for ion beam implantation using scanning and spot beams with improved high dose beam quality 有权
标题翻译：使用改进的高剂量光束质量的扫描和点光束进行离子束注入的装置和方法
公开(公告)号：US20100237232A1
公开(公告)日：2010-09-23
申请号：US12661522
申请日：2010-03-18
申请人： Jiong Chen
发明人： Jiong Chen
IPC分类号： H01J37/317 , H01J49/26 , H01J37/147
CPC分类号： H01J37/3171 , H01J49/00 , H01J2237/057 , H01J2237/1526 , H01J2237/153 , H01J2237/166 , H01J2237/24528 , H01J2237/24542 , H01J2237/30472
摘要： An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is built in.
摘要翻译：公开了一种具有多种工作模式的离子注入装置。离子注入装置具有离子源和用于在其AMU非分散平面上形成会聚束的离子提取装置。离子注入装置包括在用于扫描非分散平面上的束的磁分析仪之前的磁扫描器，用于选择具有特定质荷比的离子的磁分析器通过质量狭缝以投射到基底上。提供矩形四极磁体以准直扫描的离子束并将光束入射角精细校正到目标上。结合能量过滤的减速或加速系统位于射束准直仪的下游。公开了一种用于扫描目标的二维机械扫描系统，其中内置了光束诊断装置。

12. 发明申请

US20090194704A1 METHOD AND DEVICE OF ION SOURCE GENERATION 有权
标题翻译：离子源生成的方法和装置
公开(公告)号：US20090194704A1
公开(公告)日：2009-08-06
申请号：US12126312
申请日：2008-05-23
申请人： Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
发明人： Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
IPC分类号： H01J27/02
CPC分类号： H01J37/08 , H01J27/02 , H01J37/3171 , H01J2237/002 , H01J2237/08 , H01J2237/24585
摘要： An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
摘要翻译：注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。因此，浅离子注入的植入效率因此增加。

13. 发明申请

US20060163490A1 Ion implantation cooling system 审中-公开
标题翻译：离子注入冷却系统
公开(公告)号：US20060163490A1
公开(公告)日：2006-07-27
申请号：US11334429
申请日：2006-01-19
申请人： Daniel Tang , Jiong Chen , Wei-Cheng Lin
发明人： Daniel Tang , Jiong Chen , Wei-Cheng Lin
IPC分类号： H01J37/20
CPC分类号： H01L21/67109 , H01J2237/2001 , H01J2237/31701
摘要： An ion implantation cooling system at least comprises a semiconductor substrate utilized as the ion implantation substrate, a Pelier thermoelectric pump connected with the semiconductor substrate for heat irradiation during the ion implantation, and a heatsink connected to the Pelier thermoelectric pump for heat irradiation from a hot Pelier surface during the ion implantation. The cooling system is to employ the Pelier thermoelectric pump enabling the semiconductor substrate and the semiconductor substrate surface being at a temperature lower than that of the heatsink, so the object of proceeding ion implanting at a lower temperature can be achieved thereby.
摘要翻译：离子注入冷却系统至少包括用作离子注入衬底的半导体衬底，与离子注入期间的用于热照射的半导体衬底连接的Pelier热电泵，以及连接到Pelier热电泵的散热器，用于从热离子注入过程中的Pelier表面。冷却系统采用Pelier热电泵，使得半导体衬底和半导体衬底表面的温度低于散热片的温度，因此可以实现在较低温度下进行离子注入的目的。

14. 发明授权

US06403967B1 Magnet system for an ion beam implantation system using high perveance beams 失效
标题翻译：用于离子束植入系统的磁场系统，使用高度方位光束
公开(公告)号：US06403967B1
公开(公告)日：2002-06-11
申请号：US09419448
申请日：1999-10-15
申请人： Jiong Chen , Jinliang Chen , Eric Henry Jon Antonissen
发明人： Jiong Chen , Jinliang Chen , Eric Henry Jon Antonissen
IPC分类号： H01J37147
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/147
摘要： An apparatus for ion implantation using high perveance beams is disclosed. The apparatus includes a dipole magnet apparatus that provides an adjustment to a cross-beam magnetic dipole field in an ion implantation system. Introduction and control of the magnetic dipole field gradient in a low energy implantation system as disclosed herein gives a significant improvement to the magnet's acceptance and beam focusing which largely defines the effective transported beam current. The apparatus involves the use of ferromagnetic yokes of a prescribed shape and a portion of a secondary magnet coil following along the outside radius of a set of primary dipole magnet coils which define and delineate the primary magnetic field area and beam path. The current return path for the secondary magnet coil is via another portion of the secondary magnet coil that follows a path such that the field generated by the return path secondary magnet coil is orthogonal to the primary magnetic field. The resulting magnetic field across the beam cross-section has a sloping shape with relative maxima and minima near the transverse beamline boundary. The action of the magnetic field distribution on the ion beam acts to compensate the space-charge dispersion of high perveance beams.
摘要翻译：公开了一种使用高度方位离子束的离子注入装置。该装置包括偶极磁体装置，其提供离子注入系统中的横梁磁偶极场的调节。在本文公开的低能量注入系统中的磁偶极场梯度的引入和控制给出了磁体的接受度和束聚焦的显着改进，其大大限定了有效传输的束电流。该装置涉及使用规定形状的铁磁轭和次级电磁线圈的一部分，沿着一组初级偶极子磁体线圈的外半径，其限定并描绘主磁场区域和射束路径。次级电磁线圈的电流返回路径经过次级磁体线圈的另一部分，其沿着路径使得由返回路径次级磁体线圈产生的磁场与初级磁场正交。横截面横截面上产生的磁场具有相对最大值和最小值的横向波束边界附近的倾斜形状。离子束上的磁场分布的作用用于补偿高通量波束的空间电荷分散。

15. 发明授权

US5814819A System and method for neutralizing an ion beam using water vapor 失效
标题翻译：使用水蒸汽中和离子束的系统和方法
公开(公告)号：US5814819A
公开(公告)日：1998-09-29
申请号：US891688
申请日：1997-07-11
申请人： Frank Sinclair , Victor Benveniste , Jiong Chen
发明人： Frank Sinclair , Victor Benveniste , Jiong Chen
IPC分类号： H01J37/317 , C23C14/48 , G21K1/14 , H01J37/02 , H01J27/02
CPC分类号： H01J37/026 , H01J2237/31701
摘要： An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.
摘要翻译：提供改进的离子束中和器（22），用于中和从提取孔（50）输出的离子束（28）的电荷。中和器包括水源（52）; 连接到水源的蒸发器（54）; 连接到蒸发器的质量流量控制器（56）以及连接到质量流量控制器的入口（60）。蒸发器（54）将来自源（52）的水从液态转换为蒸汽状态。质量流量控制器（56）接收来自蒸发器（54）的水蒸汽并且测量由质量流量控制器出口（66）输出的水蒸汽的体积。入口（60）设置有靠近离子束提取孔（50）定位并从出口（66）接收计量体积的注射口（68）。注入口（68）位于提取孔附近，使得离子束和水蒸气相互作用以中和离子束。改进的离子束中和器（22）在低能量（小于十千伏电压（10KeV）））的应用中特别有效。

16. 发明授权

US09455363B2 PN structure formed by improved doping methods to simplify manufacturing process of diodes for solar cells 有权
标题翻译： PN结构通过改进的掺杂方法形成，以简化太阳能电池二极管的制造工艺
公开(公告)号：US09455363B2
公开(公告)日：2016-09-27
申请号：US13920077
申请日：2013-06-17
申请人： Jiong Chen , Junhua Hong
发明人： Jiong Chen , Junhua Hong
IPC分类号： H01L31/068 , H01L31/18 , H01L21/265 , H01L21/266
CPC分类号： H01L31/0682 , H01L21/26586 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.
摘要翻译：公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，然后形成具有开放区域的阻挡层。通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

17. 发明申请

US20140366936A1 NEW PN STRUCTURE FORMED BY IMPROVED DOPING METHODS TO SIMPLIFY MANUFACTURING PROCESS OF DIODES FOR SOLAR CELLS 审中-公开
标题翻译：通过改进的掺杂方法形成的新型PN结构简化了太阳能电池二极管的制造工艺
公开(公告)号：US20140366936A1
公开(公告)日：2014-12-18
申请号：US13920077
申请日：2013-06-17
申请人： Jiong Chen , Junhua Hong
发明人： Jiong Chen , Junhua Hong
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/0682 , H01L21/26586 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.
摘要翻译：公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，随后形成具有开放区域的阻挡层。通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

18. 发明授权

US08354654B2 Apparatus and method for ion beam implantation using scanning and spot beams with improved high dose beam quality 有权
标题翻译：使用具有改进的高剂量光束质量的扫描和点光束进行离子束注入的装置和方法
公开(公告)号：US08354654B2
公开(公告)日：2013-01-15
申请号：US12661522
申请日：2010-03-18
申请人： Jiong Chen
发明人： Jiong Chen
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J49/00 , H01J2237/057 , H01J2237/1526 , H01J2237/153 , H01J2237/166 , H01J2237/24528 , H01J2237/24542 , H01J2237/30472
摘要： An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is built in.
摘要翻译：公开了一种具有多种工作模式的离子注入装置。离子注入装置具有离子源和用于在其AMU非分散平面上形成会聚束的离子提取装置。离子注入装置包括在用于扫描非分散平面上的束的磁分析仪之前的磁扫描器，用于选择具有特定质荷比的离子的磁分析器通过质量狭缝以投射到基底上。提供矩形四极磁体以准直扫描的离子束并将光束入射角精细校正到目标上。结合能量过滤的减速或加速系统位于射束准直仪的下游。公开了一种用于扫描目标的二维机械扫描系统，其中内置了光束诊断装置。

19. 发明授权

US07462843B2 Apparatus and methods for ion beam implantation 有权
标题翻译：用于离子束注入的装置和方法
公开(公告)号：US07462843B2
公开(公告)日：2008-12-09
申请号：US11209484
申请日：2005-08-22
申请人： Jiong Chen , Nicholas R. White
发明人： Jiong Chen , Nicholas R. White
IPC分类号： G21K5/10
CPC分类号： H01J37/05 , H01J37/3171 , H01J49/30 , H01J2237/055 , H01J2237/057
摘要： This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.
摘要翻译：本发明公开了一种具有多种工作模式的离子注入装置。它具有离子源和用于从其提取带状离子束的离子提取装置。离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。提供多极镜头以控制光束的均匀性和准直。本发明还公开了一种双路束线，其中第二路径包括并入能量过滤的减速系统。本发明公开了一种离子注入方法，其中注入模式可以从目标的一维扫描切换到二维扫描，并且从简单的路径切换到具有减速的s形路径。

20. 发明授权

US06946667B2 Apparatus to decelerate and control ion beams to improve the total quality of ion implantation 有权
标题翻译：用于减速和控制离子束的装置，以提高离子注入的总质量
公开(公告)号：US06946667B2
公开(公告)日：2005-09-20
申请号：US10299443
申请日：2002-11-19
申请人： Jiong Chen , Zhming Wan , Qing Qian
发明人： Jiong Chen , Zhming Wan , Qing Qian
IPC分类号： H01J37/317 , G21K5/10 , H01J37/08
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/024 , H01J2237/04756 , H01J2237/057 , H01J2237/24405 , H01J2237/24528
摘要： An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.
摘要翻译：在本发明中公开了一种离子注入方法。所公开的方法是用离子源从原始离子束路径移动的离子注入目标晶片。该方法包括以下步骤：a）在目标晶片之前沿着原始离子束路径采用一组减速电极，用于使离子束减速和偏转到目标晶圆; 以及b）使用设置在所述离子源和所述一组减速电极之间的带电粒子偏转装置，用于使所述离子束偏离原始离子束路径，并以所述电极组的入射角向所述电极组突出以使所述电极组偏转离子束返回到原始离子束路径，用于植入目标晶片。

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